IRF IR01H420-P2

Data Sheet No. PD-6.075-G
IR01H(D)214 / IR01H(D)214-P2
IR01H(D)224 / IR01H(D)224-P2
IR01H(D)420 / IR01H(D)420-P2
HIGH VOLTAGE HALF BRIDGE
Product Summary
Features
• Output Power MOSFETs in half-bridge configuration
• 500V rated breakdown voltage
• High side gate drive designed for bootstrap
•
•
•
•
•
250V- 214/224
500V - 420
VIN (max)
operation
Matched propagation delay for both channels
Undervoltage lockout
5V Schmitt-triggered input logic
Half-Bridge output in phase with HIN
Heatsink version (P2) with improved PD
Description
The IR01H(D)xxx is a high voltage, high speed half
bridge. Proprietary HVIC and latch immune CMOS
technologies, along with the HEXFET power
MOSFET technology, enable ruggedized single
package construction. The logic inputs are compatible with standard CMOS or LSTTL outputs. The
front end features an independent high and low side
driver in phase with the logic compatible input
signals. The output features two HEXFETs in a halfbridge configuration with a high pulse current buffer
stage designed for minimum cross-conduction in the
half bridge. Propagation delays for the high and low
side power MOSFETs are matched to simplify use.
ton/off
trr
130 & 90 ns
RDS(on)
2.0Ω
Ω - H214
Ω - H224
1.1Ω
Ω - H420
3.0Ω
PD(TA = 25oC)
2.0W
4.0W - P2
260 ns
Packages
Typical Connection
HV DC Bus
VIN
NOTE: D1 is not required for
the HD type
D1
Vcc
1
H IN
2
L IN
3
Vcc
VB
H IN
VIN
L IN
VO
6
9
7
TO
LOAD
COM
4
COM
1
IR01H(D)214 / IR01H(D)214-P2
IR01H(D)224 / IR01H(D)224-P2
IR01H(D)420 / IR01H(D)420-P2
Absolute Maximum Ratings
Absolute Maximum Ratings indicate sustained limits beyond which damage to the device may occur. All voltage parameters are absolute voltages referenced to COM, all currents are defined positive into any lead. The Thermal Resistance
and Power Dissipation ratings are measured under board mounted and still air conditions.
Symbol
Definition
Min.
Max.
214/224
-0.3
250
420
-0.3
500
214/224
-0.3
275
420
-0.3
525
Half-Bridge Output
-0.3
VIN + 0.3
V
Logic Input Voltage (HIN & LIN)
- 0.3
Vcc + 0.3
V
VCC
Low Side and Logic Fixed Supply Voltage
-0.3
25
V
dV/dt
Peak Diode Recovery dv/dt
—
3.50
V/ns
Package Power Dissipation @ TA ≤ +25oC
—
2
W
4.0
W
VIN
High Voltage Supply
VB
High Side Floating Supply Absolute Voltage
VO
VIH/VIL
PD
- P2
RTHJA
Thermal Resistance, Junction to Ambient
—
TJ
2
Thermal Resistance, Junction to Case (heatsink)
Junction Temperature
- P2
V
W
60
°C/W
30
o
—
20
°C/W
-55
150
°C
- P2
RTHJC
Units
C/W
TS
Storage Temperature
-55
150
o
TL
Lead Temperature (Soldering, 10 seconds)
—
300
°C
C
IR01H(D)214 / IR01H(D)214-P2
IR01H(D)224 / IR01H(D)224-P2
IR01H(D)420 / IR01H(D)420-P2
Recommended Operating Conditions
The Input/Output logic timing diagram is shown in Figure 1. For proper operation the device should be used within the
recommended conditions.
Symbol
Definition
VB
High Side Floating Supply Absolute Voltage
VIN
High Voltage Supply
VO
Half-Bridge Output Voltage
VIH/VIL
250
500
(note 1)
250
Continuous Drain Current (TA = 25oC)
(TA = 85 oC)
(TC = 25oC)
Note 1:
—
500
10
20
Units
VV
V
0
VCC
V
-40
125
oC
214
—
0.85
A
214-P2
—
1.4
224
—
1.1
224-P2
—
1.9
420
—
0.7
420-P2
—
1.1
214
—
0.55
214-P2
—
0.9
224
—
0.7
224-P2
—
1.4
420
—
0.5
Logic Input Voltage (HIN & LIN)
Id
V
—
—
Low Side and Logic Fixed Supply Voltage
Ambient Temperature
V
214/224
214/224
TA
Max.
VO + 20
420
420
VCC
Min.
VO + 10
420-P2
—
0.8
214-P2
—
1.7
224-P2
—
2.3
420-P2
—
1.4
A
A
Logic operational for VO of -5 to 250V (214/224) and 500V (420).
Logic state held for V0 of -5 to -VB
3
IR01H(D)214 / IR01H(D)214-P2
IR01H(D)224 / IR01H(D)224-P2
IR01H(D)420 / IR01H(D)420-P2
Dynamic Electrical Characteristics
VBIAS (VCC, VBS) = 15V and TA = 25°C unless otherwise specified. Switching time waveform definitions are shown in
figure 2.
Symbol
Definition
Min. Typ. Max. Units Test Conditions
ton
toff
tr
tf
Turn-On Propagation Delay (see note 2)
—
130
200
Vs = 0V
Turn-Off Propagation Delay (see note 2)
—
90
200
Vs = 500V
Turn-On Rise Time (see note 2)
—
80
120
Turn-Off Fall Time (see note 2)
—
40
70
MT
trr
Delay Matching, HS & LS Turn-On/Off
—
30
—
Reverse Recovery Time (MOSFET Body Diode)
—
260
—
Qrr
Reverse Recovery Charge (MOSFET Body Diode)
—
0.7
—
ns
IF = 0.7A
µC
di/dt = 100 A/us
Note 2: Switching times as specified and illustrated in figure 2 are referenced to the MOSFET gate input
voltage. This is shown as HO in figure 2.
Static Electrical Characteristics
VBIAS (VCC, VB) = 15V and TA = 25°C unless otherwise specified. The Input voltage and current levels are referenced to
COM.
Symbol
VCCUV+
Definition
Min. Typ. Max. Units Test Conditions
VCC Supply Undervoltage Positive Going
8.8
9.3
9.8
V
7.5
8.2
8.6
V
µA
Threshold
VCCUV-
VCC Supply Undervoltage Negative Going
V
Threshold
IQCC
Quiescent VCC Supply Current
—
140
240
IQBS
Quiescent VBS Supply Current
—
20
50
µA
Ios
Offset Supply Leakage Current
—
—
50
µA
VIH
Logic “1” Input Voltage
2.7
—
—
VIL
Logic “0” Input Voltage
—
—
0.8
IIN+
Logic “1” Input Bias Current
—
20
40
IIN-
Logic “0” Input Bias Current
—
—
1.0
—
2.0
—
Rds(on)
VSD
Static Drain-to-Source On-Resistance
Diode Forward Voltage
V
224
—
1.1
—
420
—
3.0
—
214/420
—
0.8
—
V
—
0.85
—
VCC = 10V to 20V
VCC = 10V to 20V
VCC = 10V to 20V
µA
Ω
Ω
Ω
214
224
4
V
V
V B = VS = 500V
o
Id=850mA/TJ=150 C
Id=700mA/TJ=150 C
o
Id=1.1A/T J=150 C
o
Id=700mA/TJ=150 C
o
o
Id=1.1A/TJ=150 C
IR01H(D)214 / IR01H(D)214-P2
IR01H(D)224 / IR01H(D)224-P2
IR01H(D)420 / IR01H(D)420-P2
Functional Block Diagram
V
VIN
B
D1
6
9
1
IRFCxxx
Vcc
IR2101
2
H
H
O
V
S
7
VO
IN
IRFCxxx
L
3
L
NOTE: xxx = 214 or 224 or 420
D1 included in HD type only
O
IN
4
COM
NOTE: xxx = 214 or 224 or 420
Lead Definitions
Symbol
Description
VCC
Logic and internal gate drive supply voltage.
HIN
Logic input for high side Half Bridge output, in phase
LIN
Logic input for low side Half Bridge output, in phase
VB
High side gate drive floating supply
V+
High voltage supply
VO
Half Bridge output
COM
Logic and low side of Half Bridge return
Lead Assignments
9
6
1
2
3
4
7
1
2
3
4
6
7
9
Vcc
HIN
LIN
COM
VB
VO
VIN
5
IR01H(D)214 / IR01H(D)214-P2
IR01H(D)224 / IR01H(D)224-P2
IR01H(D)420 / IR01H(D)420-P2
50%
50%
H IN
LIN
to n
to ff
tr
90%
tf
90%
HIN
HO
10%
10%
V+
VO
0
Figure 1. Input/Output Timing Diagram
VO
Figure 2. Switching Time Waveform Definitions
Figure 3. Delay Matching Waveform Definitions
6
IR01H(D)214 / IR01H(D)214-P2
IR01H(D)224 / IR01H(D)224-P2
IR01H(D)420 / IR01H(D)420-P2
16.89 (.665)
16.63 (.655)
3.18 (.125)
2.92 (.115)
NOTES:
1. Dimensioning & Tolerancing per
ANSI Y14.5M-1982
2. Controlling dimension: Inch
3. Dimensions are shown in millimeters
(inches)
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http://www.irf.com/
Data and specifications subject to change without notice.
5/98
7