Data Sheet No. PD-6.075-G IR01H(D)214 / IR01H(D)214-P2 IR01H(D)224 / IR01H(D)224-P2 IR01H(D)420 / IR01H(D)420-P2 HIGH VOLTAGE HALF BRIDGE Product Summary Features • Output Power MOSFETs in half-bridge configuration • 500V rated breakdown voltage • High side gate drive designed for bootstrap • • • • • 250V- 214/224 500V - 420 VIN (max) operation Matched propagation delay for both channels Undervoltage lockout 5V Schmitt-triggered input logic Half-Bridge output in phase with HIN Heatsink version (P2) with improved PD Description The IR01H(D)xxx is a high voltage, high speed half bridge. Proprietary HVIC and latch immune CMOS technologies, along with the HEXFET power MOSFET technology, enable ruggedized single package construction. The logic inputs are compatible with standard CMOS or LSTTL outputs. The front end features an independent high and low side driver in phase with the logic compatible input signals. The output features two HEXFETs in a halfbridge configuration with a high pulse current buffer stage designed for minimum cross-conduction in the half bridge. Propagation delays for the high and low side power MOSFETs are matched to simplify use. ton/off trr 130 & 90 ns RDS(on) 2.0Ω Ω - H214 Ω - H224 1.1Ω Ω - H420 3.0Ω PD(TA = 25oC) 2.0W 4.0W - P2 260 ns Packages Typical Connection HV DC Bus VIN NOTE: D1 is not required for the HD type D1 Vcc 1 H IN 2 L IN 3 Vcc VB H IN VIN L IN VO 6 9 7 TO LOAD COM 4 COM 1 IR01H(D)214 / IR01H(D)214-P2 IR01H(D)224 / IR01H(D)224-P2 IR01H(D)420 / IR01H(D)420-P2 Absolute Maximum Ratings Absolute Maximum Ratings indicate sustained limits beyond which damage to the device may occur. All voltage parameters are absolute voltages referenced to COM, all currents are defined positive into any lead. The Thermal Resistance and Power Dissipation ratings are measured under board mounted and still air conditions. Symbol Definition Min. Max. 214/224 -0.3 250 420 -0.3 500 214/224 -0.3 275 420 -0.3 525 Half-Bridge Output -0.3 VIN + 0.3 V Logic Input Voltage (HIN & LIN) - 0.3 Vcc + 0.3 V VCC Low Side and Logic Fixed Supply Voltage -0.3 25 V dV/dt Peak Diode Recovery dv/dt — 3.50 V/ns Package Power Dissipation @ TA ≤ +25oC — 2 W 4.0 W VIN High Voltage Supply VB High Side Floating Supply Absolute Voltage VO VIH/VIL PD - P2 RTHJA Thermal Resistance, Junction to Ambient — TJ 2 Thermal Resistance, Junction to Case (heatsink) Junction Temperature - P2 V W 60 °C/W 30 o — 20 °C/W -55 150 °C - P2 RTHJC Units C/W TS Storage Temperature -55 150 o TL Lead Temperature (Soldering, 10 seconds) — 300 °C C IR01H(D)214 / IR01H(D)214-P2 IR01H(D)224 / IR01H(D)224-P2 IR01H(D)420 / IR01H(D)420-P2 Recommended Operating Conditions The Input/Output logic timing diagram is shown in Figure 1. For proper operation the device should be used within the recommended conditions. Symbol Definition VB High Side Floating Supply Absolute Voltage VIN High Voltage Supply VO Half-Bridge Output Voltage VIH/VIL 250 500 (note 1) 250 Continuous Drain Current (TA = 25oC) (TA = 85 oC) (TC = 25oC) Note 1: — 500 10 20 Units VV V 0 VCC V -40 125 oC 214 — 0.85 A 214-P2 — 1.4 224 — 1.1 224-P2 — 1.9 420 — 0.7 420-P2 — 1.1 214 — 0.55 214-P2 — 0.9 224 — 0.7 224-P2 — 1.4 420 — 0.5 Logic Input Voltage (HIN & LIN) Id V — — Low Side and Logic Fixed Supply Voltage Ambient Temperature V 214/224 214/224 TA Max. VO + 20 420 420 VCC Min. VO + 10 420-P2 — 0.8 214-P2 — 1.7 224-P2 — 2.3 420-P2 — 1.4 A A Logic operational for VO of -5 to 250V (214/224) and 500V (420). Logic state held for V0 of -5 to -VB 3 IR01H(D)214 / IR01H(D)214-P2 IR01H(D)224 / IR01H(D)224-P2 IR01H(D)420 / IR01H(D)420-P2 Dynamic Electrical Characteristics VBIAS (VCC, VBS) = 15V and TA = 25°C unless otherwise specified. Switching time waveform definitions are shown in figure 2. Symbol Definition Min. Typ. Max. Units Test Conditions ton toff tr tf Turn-On Propagation Delay (see note 2) — 130 200 Vs = 0V Turn-Off Propagation Delay (see note 2) — 90 200 Vs = 500V Turn-On Rise Time (see note 2) — 80 120 Turn-Off Fall Time (see note 2) — 40 70 MT trr Delay Matching, HS & LS Turn-On/Off — 30 — Reverse Recovery Time (MOSFET Body Diode) — 260 — Qrr Reverse Recovery Charge (MOSFET Body Diode) — 0.7 — ns IF = 0.7A µC di/dt = 100 A/us Note 2: Switching times as specified and illustrated in figure 2 are referenced to the MOSFET gate input voltage. This is shown as HO in figure 2. Static Electrical Characteristics VBIAS (VCC, VB) = 15V and TA = 25°C unless otherwise specified. The Input voltage and current levels are referenced to COM. Symbol VCCUV+ Definition Min. Typ. Max. Units Test Conditions VCC Supply Undervoltage Positive Going 8.8 9.3 9.8 V 7.5 8.2 8.6 V µA Threshold VCCUV- VCC Supply Undervoltage Negative Going V Threshold IQCC Quiescent VCC Supply Current — 140 240 IQBS Quiescent VBS Supply Current — 20 50 µA Ios Offset Supply Leakage Current — — 50 µA VIH Logic “1” Input Voltage 2.7 — — VIL Logic “0” Input Voltage — — 0.8 IIN+ Logic “1” Input Bias Current — 20 40 IIN- Logic “0” Input Bias Current — — 1.0 — 2.0 — Rds(on) VSD Static Drain-to-Source On-Resistance Diode Forward Voltage V 224 — 1.1 — 420 — 3.0 — 214/420 — 0.8 — V — 0.85 — VCC = 10V to 20V VCC = 10V to 20V VCC = 10V to 20V µA Ω Ω Ω 214 224 4 V V V B = VS = 500V o Id=850mA/TJ=150 C Id=700mA/TJ=150 C o Id=1.1A/T J=150 C o Id=700mA/TJ=150 C o o Id=1.1A/TJ=150 C IR01H(D)214 / IR01H(D)214-P2 IR01H(D)224 / IR01H(D)224-P2 IR01H(D)420 / IR01H(D)420-P2 Functional Block Diagram V VIN B D1 6 9 1 IRFCxxx Vcc IR2101 2 H H O V S 7 VO IN IRFCxxx L 3 L NOTE: xxx = 214 or 224 or 420 D1 included in HD type only O IN 4 COM NOTE: xxx = 214 or 224 or 420 Lead Definitions Symbol Description VCC Logic and internal gate drive supply voltage. HIN Logic input for high side Half Bridge output, in phase LIN Logic input for low side Half Bridge output, in phase VB High side gate drive floating supply V+ High voltage supply VO Half Bridge output COM Logic and low side of Half Bridge return Lead Assignments 9 6 1 2 3 4 7 1 2 3 4 6 7 9 Vcc HIN LIN COM VB VO VIN 5 IR01H(D)214 / IR01H(D)214-P2 IR01H(D)224 / IR01H(D)224-P2 IR01H(D)420 / IR01H(D)420-P2 50% 50% H IN LIN to n to ff tr 90% tf 90% HIN HO 10% 10% V+ VO 0 Figure 1. Input/Output Timing Diagram VO Figure 2. Switching Time Waveform Definitions Figure 3. Delay Matching Waveform Definitions 6 IR01H(D)214 / IR01H(D)214-P2 IR01H(D)224 / IR01H(D)224-P2 IR01H(D)420 / IR01H(D)420-P2 16.89 (.665) 16.63 (.655) 3.18 (.125) 2.92 (.115) NOTES: 1. Dimensioning & Tolerancing per ANSI Y14.5M-1982 2. Controlling dimension: Inch 3. Dimensions are shown in millimeters (inches) WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, Tel: (310) 322 3331 EUROPEAN HEADQUARTERS: Hurst Green, Oxted, Surrey RH8 9BB, UK Tel: ++ 44 1883 732020 IR CANADA: 15 Lincoln Court, Brampton, Ontario L6T 3Z2, Tel: (905) 473 2200 IR GERMANY: Saalburgstrasse 157, 61350 Bad Homburg Tel: ++ 49 6172 96590 IR ITALY: Via Liguria 49, 10071 Borgaro, Torino Tel: ++ 39 11 451 0111 IR FAR EAST: K&H Bldg., 2F, 3-30-4 Nishi-Ikeburo 3-Chome, Toshima-Ki, Tokyo Japan 171 Tel: 81 3 3983 0086 IR SOUTHEAST ASIA: 315 Outram Road, #10-02 Tan Boon Liat Building, Singapore 0316 Tel: 65 221 8371 http://www.irf.com/ Data and specifications subject to change without notice. 5/98 7