PD-97270 RevA Integrated Power Hybrid IC for Low Voltage Motor Applications IRAM136-3023B Series 30A, 150V with Internal Shunt Resistor Description International Rectifier's IRAM136-3023B is a 30A, 150V Integrated Power Hybrid IC with Internal Shunt Resistor for low voltage Motor Drives applications such as electric vehicles, portable power tools and light industrial applications. IR's technology offers an extremely compact, high performance AC motor-driver in a single isolated package to simplify design. This advanced HIC is a combination of IR's low RDS(on) Advance Planar MOSFET Super Rugged technology and the industry benchmark 3-Phase high voltage, high speed driver in a fully isolated thermally enhanced package. A built-in temperature monitor and over-current and over-temperature protections and integrated under-voltage lockout function, deliver high level of protection and fail-safe operation. Using a new developed single in line package (SiP3) with heat spreader for the power die along with full transfer mold structure minimizes PCB space and resolves isolation problems to heatsink. Features • • • • • • • • • • • Integrated Gate Drivers Temperature Monitor and Protection Overcurrent shutdown Low RDS(on) Advance Planar Super Rugged Technology Undervoltage lockout for all channels Matched propagation delay for all channels 5V Schmitt-triggered input logic Cross-conduction prevention logic Lower di/dt gate driver for better noise immunity Motor Power up to 4.0kW / 48~100 Vdc Fully Isolated Package, Isolation 2000VRMS min Absolute Maximum Ratings Parameter Description VBR(DSS) MOSFET Blocking Voltage Value 150 V+ IO @ TC=25°C Positive Bus Input Voltage 100 RMS Phase Current (Note 1) 30 IO @ TC=100°C RMS Phase Current (Note 1) 15 IO Pulsed RMS Phase Current (Note 1 and 2) 56 FPWM PWM Carrier Frequency 20 kHz PD Power Dissipation per MOSFET @ TC =25°C 89 W VRMS VISO Isolation Voltage (1min) 2000 TJ (MOSFET & IC) Maximum Operating Junction Temperature +150 TC Operating Case Temperature Range -20 to +100 TSTG Storage Temperature Range -40 to +125 Units V A °C T Mounting Torque (M4 screw) 0.7 to 1.17 Nm Note 1: Sinusoidal modulation at V+=100V, TJ=150°C, FPWM=20kHz, modulation depth=0.8, pf=0.6, see Figure 3 Note 2: tP<100ms; TC=25°C; FPWM=20kHz, limited by IBUS-TRIP, see Table "Inverter Section Electrical Characteristics" www.irf.com 1 IRAM136-3023B Internal Electrical Schematic – IRAM136-3023B V+ (10) Q1 Q2 Q3 Q4 Q5 Q6 R10A,B,C,D,E,F V- (12) R1 VB1 (1) U, VS1 (2) R2 R3 C1 VB2 (4) V, VS2 (5) C2 VB3 (7) W, VS3 (8) C3 D15 D14 D13 22 21 20 19 18 17 VB2 HO2 VS2 VB3 HO3 VS3 23 VS1 LO1 16 R4 24 HO1 R15 LO2 15 25 VB1 1 VCC HIN1 (13) HIN2 (14) HIN3 (15) 2 HIN1 LIN1 (16) LIN2 (17) 5 LIN1 R5 IC1 LO3 14 R6 3 HIN2 4 HIN3 LIN3 (18) F/TMON(19) LIN2 LIN3 F ITRIP EN RCIN VSS COM 6 7 8 9 10 11 12 13 R9 THERMISTOR ITRIP (20) R8 POSISTOR R11 VCC(21) C4 C7 R7 R12 R13 Q7 R14 C5 C6 VSS (22) 2 www.irf.com IRAM136-3023B Absolute Maximum Ratings (Continued) Symbol Parameter IBDF Units Conditions Min Max Bootstrap Diode Peak Forward Current --- 4.5 A tP= 10ms, TJ = 150°C, TC=100°C PBR Peak Bootstrap Resistor Peak Power (Single Pulse) --- 25.0 W tP=100μs, TC =100°C VS1,2,3 High side floating supply offset voltage VB1,2,3 - 25 VB1,2,3 +0.3 V VB1,2,3 High side floating supply voltage -0.3 150 V VCC Low Side and logic fixed supply voltage -0.3 20 V VIN Input voltage LIN, HIN, ITrip -0.3 Lower of (VSS+15V) or VCC+0.3V V Inverter Section Electrical Characteristics @TJ= 25°C Units Conditions Symbol Parameter Min Typ Max V(BR)DSS Drain-to-Source Breakdown Voltage 150 --- --- V VIN=5V, ID=250μA V(BR)DSS / T Temperature Coeff. Of Breakdown Voltage --- 0.16 --- V/°C VIN=5V, ID=1.0mA (25°C - 150°C) RDS(ON) Drain-to-Source On Resistance --- 38 80 --- 65 122 IDSS Zero Gate Voltage Drain Current --- 3 80 --- 8 --- VSD Body Diode Forward Voltage Drop --- 1.2 1.9 --- 1.0 1.8 VBDFM Bootstrap Diode Forward Voltage Drop -- -- 1.25 --- --- 1.10 m A V V ID=15A, VCC=15V ID=15A, VCC=15V, TJ=125°C VIN=5V, V+=150V VIN=5V, V+=150V, TJ=125°C ID=15A ID=15A, TJ=125°C IF=1A IF=1A, TJ=125°C RBR Bootstrap Resistor Value --- 22 --- TJ=25°C RBR/RBR Bootstrap Resistor Tolerance --- --- ±5 % TJ=25°C IBUS_TRIP Current Protection Threshold (positive going) 56 --- 68 A See Figure 2 www.irf.com 3 IRAM136-3023B Inverter Section Switching Characteristics @ TJ= 25°C Symbol EON EOFF Parameter Turn-On Switching Loss Min Typ Max 1/ --- 395 1100 1/ --- 135 250 --- 530 1350 --- 210 1000 Turn-Off Switching Loss 1/ ETOT Total Switching Loss EREC Diode Reverse Recovery energy1/ tRR EON EOFF 1/ --- 240 --- 1/ --- 360 970 1/ --- 115 210 --- 475 1180 --- 230 1000 --- 270 --- Diode Reverse Recovery time Turn-on Swtiching Loss Turn-off Switching Loss 1/ ETOT Total Switching Loss EREC Diode Reverse Recovery energy1/ tRR 1/ Diode Reverse Recovery time QG Turn-On FET Gate Charge EAS 1/ Units Conditions μJ ID=15A, V+=100V VCC=15V, L=2mH Energy losses include "tail" and diode reverse recovery ns See CT1 μJ ID=15A, V+=100V VCC=15V, L=2mH, TJ=125°C Energy losses include "tail" and diode reverse recovery See CT1 ns + --- 60 89 nC ID=36A, V =75V, VGS=10V Single Pulse Avalanche Energy --- --- 470 mJ Note 3, 4 IAR Avalanche Current --- --- 36 A EAR Repetitive Avalanche Energy --- --- 32 mJ Repetitive rating; pulse width limited by max. junction temperature. (Note 4) Note 3: Starting TJ = 25°C, L = 0.72mH, RG = 25, IAS = 36A Note 4: This is only applied to TO-220AB package 1/ Based on Characterization Data only. Not subject to production test. Recommended Operating Conditions Driver Function The Input/Output logic timing diagram is shown in Figure 1. For proper operation the device should be used within the recommended conditions. All voltages are absolute referenced to COM/ITRIP. The VS offset is tested with all supplies biased at 15V differential (Note 5). Symbol Definition Min Max VB1,2,3 High side floating supply voltage VS+10 VS+20 VS1,2,3 High side floating supply offset voltage Note 6 150 VCC Low side and logic fixed supply voltage 12 20 V Logic input voltage LIN, HIN VSS VSS+5 V VIN Units V Note 5: For more details, see IR2136 data sheet Note 6: Logic operational for Vs from COM-5V to COM+150V. Logic state held for Vs from COM-5V to COM-VBS. (please refer to DT97-3 for more details) 4 www.irf.com IRAM136-3023B Static Electrical Characteristics Driver Function @ TJ= 25°C VBIAS (VCC, VBS1,2,3)=15V, unless otherwise specified. The VIN and IIN parameters are referenced to VSS and are applicable to all six channels (Static Electrical Characteristics are Based on Driver IC Data Sheet, Note 5). Symbol Definition Min Typ Max Units VIH Logic "0" input voltage 3.0 --- --- V VIL Logic "1" input voltage --- --- 0.8 V VCCUV+, VBSUV+ VCC and VBS supply undervoltage positive going threshold 8.0 8.9 9.8 V VCCUV-, VBSUV- VCC and VBS supply undervoltage negative going threshold 7.4 8.2 9.0 V VCCUVH, VBSUVH VCC and VBS supply undervoltage lock-out hysteresis 0.3 0.7 --- V VIN,Clamp Input Clamp Voltage (HIN, LIN, T/ITRIP) IIN=10μA 4.9 5.2 5.5 V IQBS Quiescent VBS supply current VIN=0V --- --- 165 μA IQCC Quiescent VCC supply current VIN=0V --- --- 3.35 mA ILK Offset Supply Leakage Current --- --- 60 μA IIN+ Input bias current VIN=5V --- 200 300 μA IIN- Input bias current VIN=0V --- 100 220 μA ITRIP+ ITRIP bias current VITRIP=5V --- 30 100 μA ITRIP- ITRIP bias current VITRIP=0V --- 0 1 μA V(ITRIP) ITRIP threshold Voltage 440 490 540 mV V(ITRIP,HYS) ITRIP Input Hysteresis --- 70 --- mV Dynamic Electrical Characteristics @ TJ= 25°C Symbol TON TOFF TFLIN TBLT-Trip DT MT TITrip TFLT-CLR Parameter Input to Output propagation turnon delay time (see fig.11)2/ Input to Output propagation turnoff delay time (see fig. 11)2/ Input Filter time (HIN, LIN)3/ 3/ ITRIP Blancking Time Dead Time (VBS=VDD=15V) 3/ Matching Propagation Delay Time (On & Off)3/ ITrip to six switch to turn-off propagation delay (see fig. 2)4/ Post ITrip to six switch to turn-off clear time (see fig. 2) 4/ Min Typ Max --- 0.83 --- μs --- 1.08 --- μs 100 200 --- ns VIN=0 & VIN=5V 100 150 --- ns VIN=0 & VIN=5V 220 290 360 ns --- 40 75 ns --- 3.2 --- μs --- 7.7 --- --- 6.7 --- 2/ Based on Characterization Data only. Not subject to production test. 3/ Based on Driver IC Data Sheet. 4/ Verified by Design. Not subject to production test. www.irf.com Units Conditions ms VCC=VBS= 15V, ID=30A, V+=100V VBS=VCC=15V VCC= VBS= 15V, external dead time> 400ns VCC=VBS= 15V, ID=30A, V+=100V TC = 25°C TC = 100°C 5 IRAM136-3023B Thermal and Mechanical Characteristics Symbol Rth(J-C) Min Typ Max 5/ --- 1.2 1.4 5/ --- 0.1 --- 3.5 --- --- Thermal resistance, FET Rth(C-S) Thermal resistance, C-S CD 5/ Parameter Creepage Distance Units Conditions Flat, greased surface. Heatsink °C/W compound thermal conductivity 1W/m°K mm See outline Drawings Based on Characterization Data only. Not subject to production test. Internal Current Sensing Resistor - Shunt Characteristics Symbol Parameter Min Typ Max Units Conditions RShunt Resistance 8.1 8.3 8.5 m TCoeff Temperature Coefficient 0 --- 200 ppm/°C PShunt Power Dissipation --- --- 4.5 W TRange Temperature Range -20 --- 125 °C TC = 25°C -40°C< TC <100°C Internal NTC - Thermistor Characteristics Parameter Definition Min Typ Max R25 Resistance 97 100 103 k TC = 25°C 2.25 2.52 2.80 k TC = 125°C 4165 4250 4335 k Temperature Range -20 --- 125 °C Typ. Dissipation constant --- 1 --- 6/ R125 Resistance B 6/ B-constant (25-50°C) 6/ Units Conditions R2 = R1e [B(1/T2 - 1/T1)] mW/°C TC = 25°C Verified by Design. Not subject to production test. Input-Output Logic Level Table V+ Ho Hin1,2,3 (13,14,15) U,V,W IC Driver (2,5,8) Lin1,2,3 (16,17,18) 6 Lo ITRIP HIN1,2,3 LIN1,2,3 U,V,W 0 0 0 1 0 1 1 X 1 0 1 X V+ 0 X X www.irf.com IRAM136-3023B Figure 1. Input/Output Timing Diagram HIN1,2,3 LIN1,2,3 50% 50% ITRIP U,V,W 50% 50% TITRIP TFLT-CLR Figure 2. ITRIP Timing Waveform Note 7: The shaded area indicates that both high-side and low-side switches are off and therefore the halfbridge output voltage would be determined by the direction of current flow in the load. www.irf.com 7 IRAM136-3023B Module Pin-Out Description 8 Pin Name 1 VB1 2 U, VS1 Description High Side Floating Supply Voltage 1 Output 1 - High Side Floating Supply Offset Voltage 3 NA none 4 VB2 High Side Floating Supply voltage 2 5 V,VS2 6 NA none 7 VB3 High Side Floating Supply voltage 3 8 W,VS3 9 NA + Output 2 - High Side Floating Supply Offset Voltage Output 3 - High Side Floating Supply Offset Voltage none 10 V Positive Bus Input Voltage 11 NA none 12 V- Negative Bus Input Voltage 13 HIN1 Logic Input High Side Gate Driver - Phase 1 14 HIN2 Logic Input High Side Gate Driver - Phase 2 15 HIN3 Logic Input High Side Gate Driver - Phase 3 16 LIN1 Logic Input Low Side Gate Driver - Phase 1 17 LIN2 Logic Input Low Side Gate Driver - Phase 2 18 LIN3 Logic Input Low Side Gate Driver - Phase 3 19 Fault/TMON 20 ISense 21 VCC +15V Main Supply 22 VSS Negative Main Supply Temperature Monitor and Fault Function Current Monitor www.irf.com IRAM136-3023B Typical Application Connection IRAM136-3023B 1 VB1 BOOT-STRAP CAPACITORS U VB2 V VB3 V+ W V+ DC BUS CAPACITORS VHIN1 +5V HIN2 HIN3 LIN1 LIN2 LIN3 FLT/TMON Date Code Lot # IRAM136-3023B 3-Phase AC MOTOR ITRIP CONTROLLER 12kohm VSS +5V 22 Fault & Temp Monitor Vcc (15 V) IMonitor +15V 0.1m 10m 1. Electrolytic bus capacitors should be mounted as close to the module bus terminals as possible to reduce ringing and EMI problems. Additional high frequency ceramic capacitor mounted close to the module pins will further improve performance. 2. In order to provide good decoupling between VCC-VSS and VB1,2,3-VS1,2,3 terminals, the capacitors shown connected between these terminals should be located very close to the module pins. Additional high frequency capacitors, typically 0.1μF, are strongly recommended. 3. Value of the boot-strap capacitors depends upon the switching frequency. Their selection should be made based on IR design tip DN 98-2a, application note AN-1044 or Figure 9. Bootstrap capacitor value must be selected to limit the power dissipation of the internal resistor in series with the VCC. (see maximum ratings Table on page 3). 4. After approx. 8ms the FAULT is reset. (see Dynamic Characteristics Table on page 5). 5. PWM generator must be disabled within Fault duration to guarantee shutdown of the system, overcurrent condition must be cleared before resuming operation. 6. Fault/TMON Monitor pin must be pulled-up to +5V. www.irf.com 9 IRAM136-3023B Maximum Output Phase RMS Current - A 26 24 22 20 18 16 14 TC = 80ºC TC = 90ºC TC = 100ºC 12 10 8 6 4 2 0 0 2 4 6 8 10 12 14 16 18 20 PWM Sw itching Frequency - kHz Figure 3. Maximum Sinusoidal Phase Current vs. PWM Switching Frequency Sinusoidal Modulation, V+=100V, TJ=150°C, Modulation Depth=0.8, PF=0.6 Maximum Output Phase RMS Current - A 20 18 16 14 12 10 FPWM = 12kHz FPWM = 16kHz FPWM = 20kHz 8 6 4 2 0 1 10 100 Modulation Frequency - Hz Figure 4. Maximum Sinusoidal Phase Current vs. Modulation Frequency Sinusoidal Modulation, V+=100V, TJ=100°C, Modulation Depth=0.8, PF=0.6 10 www.irf.com IRAM136-3023B 240 220 Total Power Loss- W 200 180 160 140 120 100 80 60 IOUT = 18A IOUT = 15A IOUT = 12A 40 20 0 0 2 4 6 8 10 12 14 16 18 20 PWM Sw itching Frequency - kHz Figure 5. Total Power Losses vs. PWM Switching Frequency Sinusoidal Modulation, V+=100V, TJ=150°C, Modulation Depth=0.8, PF=0.6 350 Total Power Loss - W 300 250 200 150 FPWM = 20kHz FPWM = 16kHz FPWM = 12kHz 100 50 0 0 2 4 6 8 10 12 14 16 18 20 22 24 Output Phase Current - ARMS Figure 6. Total Power Losses vs. Output Phase Current Sinusoidal Modulation, V+=100V, TJ=150°C, Modulation Depth=0.8, PF=0.6 www.irf.com 11 Max Allowable Case Temperature - ºC IRAM136-3023B 150 140 130 120 110 100 90 80 70 60 50 40 30 20 10 0 FPWM = 12kHz FPWM = 16kHz FPWM = 20kHz 0 2 4 6 8 10 12 14 16 18 20 22 24 Output Phase Current - ARMS Figure 7. Maximum Allowable Case Temperature vs. Output RMS Current per Phase Sinusoidal Modulation, V+=100V, TJ=150°C, Modulation Depth=0.8, PF=0.6 MOSFET Junction Temperature - °C 160 TJ avg = 1.4026 x TT herm + 6.4583 150 140 130 120 110 102.3 100 65 70 75 80 85 90 95 100 105 110 Internal Therm istor Tem perature Equivalent Read Out - °C Figure 8. Estimated Maximum MOSFET Junction Temperature vs. Thermistor Temperature 12 www.irf.com IRAM136-3023B 5.0 +5V Thermistor Pin Read-Out Voltage - V 4.5 REXT 4.0 VTherm 3.5 TTHERM RTHERM TTHERM RTHERM TTHERM °C °C °C -40 4397119 25 100000 90 3.0 2.5 2.0 1.5 1.0 0.5 RTHERM 7481 -35 -30 -25 3088599 2197225 1581881 30 35 40 79222 63167 50677 95 100 105 6337 5384 4594 -20 -15 -10 1151037 846579 628988 45 50 55 40904 33195 27091 110 115 120 3934 3380 2916 -5 0 5 10 15 471632 357012 272500 209710 162651 60 65 70 75 80 22224 18322 15184 12635 10566 125 130 135 140 145 2522 2190 1907 1665 1459 20 127080 85 8873 150 1282 0.0 -40 -30 -20 -10 0 RTherm Min Avg. Max 10 20 30 40 50 60 70 80 90 100 110 120 130 140 150 Therm istor Tem perature - °C Recommended Bootstrap Capacitor - F Figure 9. Thermistor Readout vs. Temperature (12Kohm pull-up resistor, 5V) and Normal Thermistor Resistance values vs. Temperature Table. 16.0 15.0 14.0 13.0 12.0 11.0 10.0 9.0 8.0 7.0 6.0 5.0 4.0 3.0 2.0 1.0 0.0 15F RBS +15V 10F DBS Vcc HHIN H HIN L HIN L HIN VB V SS COM 6.8F V+ CBS R G1 Ho U,V,W Vs RG 2 Lo V SS GND 4.7F 3.3F 0 5 10 15 20 PWM Frequency - kHz Figure 10. Recommended Bootstrap Capacitor Value vs. Switching Frequency www.irf.com 13 IRAM136-3023B Figure 11. Switching Parameter Definitions VDS ID ID VDS 90% ID 50% HIN /LIN 90% ID 50% VDS HIN /LIN 50% HIN /LIN HIN /LIN 50% VCE 10% ID 10% ID tf tr TON Figure 11a. Input to Output propagation turn-on delay time. TOFF Figure 11b. Input to Output propagation turn-off delay time. Figure 11c. Diode Reverse Recovery. 14 www.irf.com IRAM136-3023B Figure CT1. Switching Loss Circuit IN IO Figure CT2. S.C.SOA Circuit IN IO Figure CT3. R.B.SOA Circuit www.irf.com 15 IRAM136-3023B Package Outline Missing pins: 3, 6, 9, 11 Missing Pin : 3,6,9,11 note3 TENTATIVE note4 Ԙ IRAM136-3023B P 4DB00 note2 note5 Ԛ note1: Unit Tolerance is +0.5mm, 䇭䇭䇭 Unless Otherwise Specified. note2: Mirror Surface Mark indicates Pin1 Identification. note3: Part Number Marking. Characters Font in this drawing differs from 䇭䇭䇭䇭 Font shown on Module. ԙ note4: Lot Code Marking. Characters Font in this drawing differs from 䇭䇭䇭䇭 Font shown on Module. note5: “P” Character denotes Lead Free. Characters Font in this drawing differs from Font shown on Module. For mounting instruction see AN-1049 Data and Specifications are subject to change without notice IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information 02/2008 16 www.irf.com