BF 506 PNP Silicon RF Transistor ● BF 506 For VHF mixer and oscillator stages 2 1 Type Marking Ordering Code BF 506 – Q62702-F534 Pin Configuration 1 2 3 C B Package1) TO-92 E Maximum Ratings Parameter Symbol Values Unit Collector-emitter voltage VCE0 35 V Collector-base voltage VCB0 40 Emitter-base voltage VEB0 4 Collector current IC 30 Base current IB 5 Total power dissipation, TA ≤ 45 ˚C Ptot 300 mW Junction temperature Tj 150 ˚C Storage temperature range Tstg – 55 … + 150 Rth JA ≤ mA Thermal Resistance Junction - ambient 1) For detailed information see chapter Package Outlines. Semiconductor Group 1 350 3 K/W BF 506 Electrical Characteristics at TA = 25 ˚C, unless otherwise specified. Symbol Parameter Values Unit min. typ. max. DC Characteristics Collector-emitter breakdown voltage IC = 2 mA V(BR) CE0 35 – – Collector-base breakdown voltage IC = 10 µA V(BR) CB0 40 – – Emitter-base breakdown voltage IE = 10 µA V(BR) EB0 4 – – Collector cutoff current VCB = 20 V ICB0 – – 100 nA DC current gain IC = 3 mA, VCE = 10 V hFE 25 – – – Transition frequency IC = 2 mA, VCE = 10 V, f = 100 MHz fT – 550 – MHz Collector-emitter capacitance VCB = 10 V, VBE = 0 V, f = 1 MHz Cce – 0.12 – V Noise figure IC = 2 mA, VCB = 10 V, f = 200 MHz RS = 60 Ω F – 3 – dB V AC Characteristics Semiconductor Group 2