IRF HFA16TB120PBF

PD-95740
HFA16TB120PbF
HEXFRED
Ultrafast, Soft Recovery Diode
TM
Features
•
•
•
•
•
•
Benefits
4
IF(AV) = 16A
Qrr (typ.)= 260nC
2
1
• Reduced RFI and EMI
• Reduced Power Loss in Diode and Switching
Transistor
• Higher Frequency Operation
• Reduced Snubbing
• Reduced Parts Count
VR = 1200V
VF(typ.)* = 2.3V
BASE
CATHODE
Ultrafast Recovery
Ultrasoft Recovery
Very Low IRRM
Very Low Qrr
Specified at Operating Conditions
Lead-Free
CATHODE
3
ANODE
2
IRRM(typ.) = 5.8A
trr(typ.) = 30ns
di(rec)M/dt (typ.)* = 76A/µs
Description
International Rectifier's HFA16TB120 is a state of the art ultra fast recovery
diode. Employing the latest in epitaxial construction and advanced processing
techniques it features a superb combination of characteristics which result in
performance which is unsurpassed by any rectifier previously available. With
basic ratings of 1200 volts and 16 amps continuous current, the HFA16TB120
is especially well suited for use as the companion diode for IGBTs and
MOSFETs. In addition to ultra fast recovery time, the HEXFRED product line
features extremely low values of peak recovery current (I RRM) and does not
exhibit any tendency to "snap-off" during the t b portion of recovery. The
HEXFRED features combine to offer designers a rectifier with lower noise and
significantly lower switching losses in both the diode and the switching transistor.
These HEXFRED advantages can help to significantly reduce snubbing,
component count and heatsink sizes. The HEXFRED HFA16TB120 is ideally
suited for applications in power supplies and power conversion systems (such
as inverters), motor drives, and many other similar applications where high
speed, high efficiency is needed.
TO-220AC
Absolute Maximum Ratings
Parameter
VR
IF @ TC = 100°C
IFSM
IFRM
PD @ TC = 25°C
PD @ TC = 100°C
TJ
TSTG
Cathode-to-Anode Voltage
Continuous Forward Current
Single Pulse Forward Current
Maximum Repetitive Forward Current
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction and
Storage Temperature Range
Max
Units
1200
16
190
64
151
60
V
-55 to +150
A
W
°C
* 125°C
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1
HFA16TB120PbF
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
VBR
Cathode Anode Breakdown Voltage
VFM
Max Forward Voltage
IRM
Max Reverse Leakage Current
CT
Junction Capacitance
LS
Series Inductance
Min Typ Max Units
1200
V
2.5 3.0
3.2 3.93
2.3 2.7
0.75 20
375 2000
27
40
V
µA
pF
8.0
nH
Test Conditions
IR = 100µA
IF = 16A
See Fig. 1
IF = 32A
IF = 16A, TJ = 125°C
VR = VR Rated
See Fig. 2
TJ = 125°C, VR = 0.8 x VR RatedD Raed
VR = 200V
See Fig. 3
Measured lead to lead 5mm from
package body
Dynamic Recovery Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
trr
trr1
trr2
IRRM1
IRRM2
Qrr1
Qrr2
di(rec)M/dt1
di(rec)M/dt2
Reverse Recovery Time
See Fig. 5, 10
Peak Recovery Current
See Fig. 6
Reverse Recovery Charge
See Fig. 7
Peak Rate of Fall of Recovery Current
During tb
See Fig. 8
Min Typ Max Units
30
90
164
5.8
8.3
260
680
120
76
135
245
10
15
675
1838
ns
A
nC
A/µs
Test Conditions
I F = 1.0A, dif/dt = 200A/µs, V R = 30V
TJ = 25°C
TJ = 125°C
I F = 16A
TJ = 25°C
TJ = 125°C
V R = 200V
TJ = 25°C
TJ = 125°C
dif/dt = 200A/µs
TJ = 25°C
TJ = 125°C
Thermal - Mechanical Characteristics
Parameter
Tlead 
RthJC
RthJA ‚
RthCSƒ
Lead Temperature
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
Thermal Resistance, Case to Heat Sink
Wt
Weight
Mounting Torque
Min
Typ
Max
Units
300
0.83
80
°C
K/W
12
10
g
(oz)
Kg-cm
lbf•in
0.50
2.0
0.07
6.0
5.0
 0.063 in. from Case (1.6mm) for 10 sec
‚ Typical Socket Mount
ƒ Mounting Surface, Flat, Smooth and Greased
2
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HFA16TB120PbF
Reverse Current - IR (µA)
1000
100
T = 125˚C
J
10
1
TJ = 25˚C
0.1
10
A
0.01
0
200
400
600
800
1000
1200
Reverse Current - VR (V)
T = 125˚C
J
Fig. 2 - Typical Reverse Current vs. Reverse
Voltage
T = 25˚C
J
1000
T = 150˚C
J
Junction Capacitance -CT (pF)
Instantaneous Forward Current - IF (A)
100
TJ = 150˚C
1
0.1
0
2
4
6
8
Fig. 1 - Maximum Forward Voltage Drop
vs. Instantaneous Forward Current
100
T J = 25˚C
10
A
1
1
10
100
1000
10000
Reverse Current - VR (V)
Fig. 3 - Typical Junction Capacitance vs.
Reverse Voltage
Thermal Response (Z
thJC
)
1
0.1
D
D
D
D
D
D
=
=
=
=
=
=
0.50
0.20
0.10
0.05
0.02
0.01
PDM
Single Pulse
(Thermal Resistance)
t1
t2
Notes:
1. Duty factor D = t1/ t 2
2. Peak TJ = Pdm x ZthJC + Tc
0.01
0.00001
0.0001
0.001
0.01
0.1
1
10
100
t1, Rectangular Pulse Duration (sec)
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Fig. 4 - Maximum Thermal Impedance Zthjc Characteristics
3
HFA16TB120PbF
270
30
220
25
20
170
Irr ( A)
trr (nC)
If = 16 A
If = 8 A
V R = 200V
T J = 125˚C
T J = 25˚C
If = 16 A
If = 8 A
15
120
10
70
5
VR = 200V
TJ = 125˚C
TJ = 25˚C
20
100
0
100
1000
di f / dt (A/µs)
Fig. 6 - Typical Recovery Current vs. dif/dt,
(per Leg)
Fig. 5 - Typical Reverse Recovery vs. di f/dt,
(per Leg)
1600
1400
1000
di f / dt (A/µs)
10000
V R = 200V
T J = 125˚C
T J = 25˚C
V R = 200V
T J = 125˚C
T J = 25˚C
Qrr (nC)
1000
di (rec) M/dt (A /µs)
1200
If = 16A
If = 8A
800
600
1000
If = 16A
If = 8A
100
400
200
0
100
di f / dt (A/µs)
1000
Fig. 7 - Typical Stored Charge vs. dif/dt,
(per Leg)
4
10
100
di f / dt (A/µs)
1000
Fig. 8 - Typical di(rec)M/dt vs. dif/dt,
(per Leg)
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HFA16TB120PbF
3
t rr
IF
REVERSE RECOVERY CIRCUIT
tb
ta
0
Q rr
VR = 200V
2
I RRM
4
0.5 I RRM
di(rec)M/dt
0.01 Ω
0.75 I RRM
L = 70µH
D.U.T.
dif/dt
ADJUST
D
G
IRFP250
S
Fig. 9 - Reverse Recovery Parameter Test
Circuit
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5
1
di f /dt
1. dif/dt - Rate of change of current
through zero crossing
2. I RRM - Peak reverse recovery current
3. trr - Reverse recovery time measured
from zero crossing point of negative
going IF to point where a line passing
through 0.75 IRRM and 0.50 IRRM
extrapolated to zero current
4. Qrr - Area under curve defined by trr
and I RRM
trr X IRRM
Q rr =
2
5. di(rec)M/dt - Peak rate of change of
current during t b portion of trr
Fig. 10 - Reverse Recovery Waveform and
Definitions
5
HFA16TB120PbF
TO-220AC Package Outline
Dimensions are shown in millimeters (inches)
TO-220AC Part Marking Information
PART NUMBE R
EXAMPLE : T HIS IS A HFA06T B120
LOT CODE 1789
AS SEMBLED ON WW 19, 2001
IN T HE ASSE MBLY LINE "C"
INT ERNAT IONAL
RECT IFIER
LOGO
DAT E CODE
ASS EMBLY
LOT CODE
P = LEAD-FREE
YEAR 1 = 2001
WE EK 19
LINE C
PART NUMBER
E XAMPLE: T HIS IS A HFA06TB120
LOT CODE 1789
AS SE MBLED ON WW 19, 2001
IN T HE ASS EMBLY LINE "C"
INT E RNATIONAL
RECT IFIER
LOGO
DAT E CODE
ASS EMBLY
LOT CODE
YE AR 1 = 2001
WE EK 19
P = LE AD-F REE
Data and specifications subject to change without notice.
This product has been designed and qualified for Industrial Level.
Qualification Standards can be found on IR's Web site.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7309
Visit us at www.irf.com for sales contact information. 10/04
6
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