IRF IRF7828PBF

PD-95214A
IRF7828PbF
HEXFET® Power MOSFET for DC-DC Converters
•
•
•
•
•
N-Channel Application-Specific MOSFETs
Ideal for CPU Core DC-DC Converters
Low Conduction Losses
Low Switching Losses
Lead-Free
Description
This new device employs advanced HEXFET Power
MOSFET technology to achieve an unprecedented
balance of on-resistance and gate charge. The reduced
conduction and switching losses make it ideal for high
efficiency DC-DC converters that power the latest
generation of microprocessors.
The IRF7828 has been optimized for all parameters that
are critical in synchronous buck converters including
RDS(on), gate charge and Cdv/dt-induced turn-on immunity.
The IRF7828 offers particulary low RDS(on) and high Cdv/dt
immunity for synchronous FET applications.
The package is designed for vapor phase, infra-red,
convection, or wave soldering techniques. Power
dissipation of greater than 3W is possible in a typical
PCB mount application.
SO-8
A
D
S
1
8
S
2
7
D
S
3
6
D
G
4
5
D
T o p V ie w
DEVICE CHARACTERISTICS…
IRF7828PbF
RDS(on)
9.5mΩ
QG
9.2nC
Qsw
3.7nC
Qoss
6.1nC
Absolute Maximum Ratings
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
Continuous Drain or Source
TA = 25°C
Current (VGS ≥ 4.5V)
TL = 70°C
Pulsed Drain Current
Power Dissipation
TA = 25°C
IRF7828PbF
30
VGS
±20
ID
13.6
IDM
100
PD
2.5
11
TL = 70°C
Units
V
A
W
1.6
TJ, TSTG
–55 to 150
°C
Continuous Source Current (Body Diode)
IS
3.1
A
Pulsed Source Current
ISM
100
Junction & Storage Temperature Range
Thermal Resistance
Parameter
Maximum Junction-to-Ambientƒ
R θJA
Max.
50
Units
°C/W
Maximum Junction-to-Lead
R θJL
20
°C/W
04/05/07
IRF7828PbF
Electrical Characteristics
Parameter
Min
Typ
Max
Units
Drain-to-Source
Breakdown Voltage
BVDSS
30
–
–
V
Static Drain-Source
on Resistance
RDS (on)
–
9.5
12.5
mΩ
Gate Threshold Voltage
VGS(th)
1.0
–
–
V
Drain-Source Leakage
Current
IDSS
–
–
1.0
–
–
150
Current*
Conditions
VGS = 0V, ID = 250µA
VGS = 4.5V, ID = 10A‚
VDS = VGS,ID = 250µA
VDS = 24V, VGS = 0
µA
VDS = 24V, VGS = 0,
Tj = 125°C
Gate-Source Leakage
Current
IGSS
–
–
±100
Total Gate Chg Cont FET
QG
–
9.2
14
VGS=5.0V, ID=15A, VDS=16V
Total Gate Chg Sync FET
QG
–
7.3
–
VGS = 5V, VDS< 100mV
Pre-Vth
Gate-Source Charge
QGS1
–
2.5
–
VDS = 15V, ID = 10A
Post-Vth
Gate-Source Charge
QGS2
–
0.8
–
Gate to Drain Charge
QGD
–
2.9
–
Switch Chg(Qgs2 + Qgd)
Qsw
–
3.7
–
Output Charge
Qoss
–
6.1
–
Gate Resistance
RG
–
2.3
–
Turn-on Delay Time
td (on)
–
6.3
–
nA
nC
VDS = 10V, VGS = 0
Ω
VDD = 15V, ID = 10A
Rise Time
tr
–
2.7
–
Turn-off Delay Time
td (off)
–
9.7
–
Fall Time
tf
–
7.3
–
Input Capacitance
Ciss
–
1010
–
Output Capacitance
Coss
–
360
–
–
110
–
Min
Typ
Max
Units
Reverse Transfer Capacitance Crss
VGS = ±20V
ns
VGS = 4.5V
Clamped Inductive Load
pF
VDS = 15V, VGS = 0
Source-Drain Rating & Characteristics
Parameter
Diode Forward
Voltage*
VSD
–
–
1.0
V
Reverse Recovery
Charge„
Qrr
–
13
–
nC
Reverse Recovery
Charge (with Parallel
Schottky)„
Qrr(s)
Notes:
2

‚
ƒ
„
…
Conditions
IS = 10A‚, VGS = 0V
di/dt ~ 700A/µs
VDS = 16V, VGS = 0V, IS = 15A
–
13
–
nC
di/dt = 700A/µs
(with 10BQ040)
VDS = 16V, VGS = 0V, IS = 15A
Repetitive rating; pulse width limited by max. junction temperature.
Pulse width ≤ 400 µs; duty cycle ≤ 2%.
When mounted on 1 inch square copper board
Typ = measured - Qoss
Typical values of RDS(on) measured at VGS = 4.5V, QG, QSW and Q OSS
measured at VGS = 5.0V, IF = 10A.
www.irf.com
IRF7828PbF
12
ID = 10A
ID = 14A
VGS = 10V
VGS , Gate-to-Source Voltage (V)
RDS(on) , Drain-to-Source On Resistance
(Normalized)
2.0
1.5
1.0
VDS= 24V
VDS= 15V
10
8
6
4
2
0
0.5
-60 -40 -20
0
20
40
60
0
80 100 120 140 160
5
10
15
20
Q G Total Gate Charge (nC)
T J , Junction Temperature (°C)
Fig 1. Normalized On-Resistance
Vs. Temperature
Fig 2. Typical Gate Charge Vs.
Gate-to-Source Voltage
10000
VGS = 0V,
f = 1 MHZ
Ciss = C gs + Cgd, C ds SHORTED
Crss = Cgd
C, Capacitance (pF)
Coss = Cds + Cgd
Ciss
1000
Coss
Crss
100
10
1
10
100
VDS, Drain-to-Source Voltage (V)
Fig 3. On-Resistance Vs. Gate Voltage
www.irf.com
Fig 4. Typical Capacitance Vs.
Drain-to-Source Voltage
3
IRF7828PbF
100.0
100.0
ISD, Reverse Drain Current (A)
ID, Drain-to-Source Current (Α)
TJ = 150°C
10.0
T J = 25°C
1.0
VDS = 15V
20µs PULSE WIDTH
0.1
2.0
3.0
4.0
5.0
T J = 150°C
10.0
1.0
T J = 25°C
VGS = 0V
0.1
6.0
0.0
0.5
VGS, Gate-to-Source Voltage (V)
1.0
1.5
VSD, Source-toDrain Voltage (V)
Fig 5. Typical Transfer Characteristics
Fig 6. Typical Source-Drain Diode
Forward Voltage
100
Thermal Response ( Z thJA )
D = 0.50
0.20
10
0.10
0.05
0.02
0.01
1
0.1
SINGLE PULSE
( THERMAL RESPONSE )
0.01
1E-006
1E-005
0.0001
0.001
0.01
0.1
1
10
100
t1 , Rectangular Pulse Duration (sec)
Figure 7. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
4
www.irf.com
IRF7828PbF
SO-8 Package Outline
Dimensions are shown in milimeters (inches)
'
$
(
,1&+(6
0,1
0$;
$ $ E F ' ( H %$6,&
H %$6,&
+ . / ƒ
\
ƒ
',0
%
+
>@
$
; H
H
;E
>@
$
$
0,//,0(7(56
0,1
0$;
%$6,&
%$6,&
ƒ
ƒ
.[ƒ
&
\
>@
;/
;F
& $ %
127(6
',0(16,21,1*72/(5$1&,1*3(5$60(<0
&21752//,1*',0(16,210,//,0(7(5
',0(16,216$5(6+2:1,10,//,0(7(56>,1&+(6@
287/,1(&21)250672-('(&287/,1(06$$
',0(16,21'2(6127,1&/8'(02/'3527586,216
02/'3527586,21612772(;&(('>@
',0(16,21'2(6127,1&/8'(02/'3527586,216
02/'3527586,21612772(;&(('>@
',0(16,21,67+(/(1*7+2)/($')2562/'(5,1*72
$68%675$7(
)22735,17
;>@
>@
;>@
;>@
SO-8 Part Marking Information (Lead-Free)
(;$03/(7+,6,6$1,5)026)(7
,17(51$7,21$/
5(&7,),(5
/2*2
www.irf.com
;;;;
)
'$7(&2'(<::
3 '(6,*1$7(6/($')5((
352'8&7237,21$/
< /$67',*,72)7+(<($5
:: :((.
$ $66(0%/<6,7(&2'(
/27&2'(
3$57180%(5
5
IRF7828PbF
SO-8 Tape and Reel
Dimensions are shown in milimeters (inches)
TERMINAL NUMBER 1
12.3 ( .484 )
11.7 ( .461 )
8.1 ( .318 )
7.9 ( .312 )
FEED DIRECTION
NOTES:
1. CONTROLLING DIMENSION : MILLIMETER.
2. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS(INCHES).
3. OUTLINE CONFORMS TO EIA-481 & EIA-541.
330.00
(12.992)
MAX.
14.40 ( .566 )
12.40 ( .488 )
NOTES :
1. CONTROLLING DIMENSION : MILLIMETER.
2. OUTLINE CONFORMS TO EIA-481 & EIA-541.
Data and specifications subject to change without notice.
This product has been designed and qualified for the Consumer market.
Qualification Standards can be found on IR’s Web site.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information.04/07
6
www.irf.com