PD-94009 IRF7811AV IRF7811AV • • • • • N-Channel Application-Specific MOSFETs Ideal for CPU Core DC-DC Converters Low Conduction Losses Low Switching Losses Minimizes Parallel MOSFETs for high current applications Description This new device employs advanced HEXFET Power MOSFET technology to achieve an unprecedented balance of on-resistance and gate charge. The reduced conduction and switching losses make it ideal for high efficiency DC-DC converters that power the latest generation of microprocessors. The IRF7811AV has been optimized for all parameters that are critical in synchronous buck converters including RDS(on), gate charge and Cdv/dt-induced turn-on immunity. The IRF7811AV offers an extremely low combination of Qsw & RDS(on) for reduced losses in both control and synchronous FET applications. The package is designed for vapor phase, infra-red, convection, or wave soldering techniques. Power dissipation of greater than 2W is possible in a typical PCB mount application. A A D 1 8 S 2 7 D S 3 6 D G 4 5 D S T o p V ie w SO-8 DEVICE CHARACTERISTICS IRF7811AV RDS(on) 11mΩ QG 17nC Qsw 6.7nC Qoss 8.1nC Absolute Maximum Ratings Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain or Source TA = 25°C Current (VGS ≥ 4.5V) TL = 90°C Pulsed Drain Current Power Dissipation Symbol IRF7811AV VDS 30 VGS ±20 ID 10.8 11.8 IDM TA = 25°C PD TL = 90°C Units V A 100 2.5 W 3.0 TJ, TSTG –55 to 150 °C Continuous Source Current (Body Diode) IS 2.5 A Pulsed Source Current ISM 50 RθJA RθJL Max. 50 20 Junction & Storage Temperature Range Thermal Resistance Parameter Maximum Junction-to-Ambient Maximum Junction-to-Lead www.irf.com Units °C/W °C/W 1 12/13/00 IRF7811AV Electrical Characteristics Parameter Drain-to-Source Breakdown Voltage BVDSS Static Drain-Source on Resistance RDS(on) Gate Threshold Voltage VGS(th) Drain-Source Leakage Current IDSS Min Typ Max Units 30 – – V 11 14 mΩ VGS = 4.5V, ID = 15A V VDS = VGS,I D = 250µA 1.0 20 Current* Conditions VGS = 0V, ID = 250µA VDS = 24V, VGS = 0 100 µA ±100 nA VDS = 24V, VGS = 0, Tj = 100°C Gate-Source Leakage Current IGSS Total Gate Chg Cont FET QG 17 26 VGS=5V, ID=15A, VDS=24V Total Gate Chg Sync FET QG 14 21 VGS = 5V, VDS< 100mV Pre-Vth Gate-Source Charge QGS1 3.4 Post-Vth Gate-Source Charge QGS2 1.6 Gate to Drain Charge QGD 5.1 Switch Chg(Qgs2 + Qgd) Qsw 6.7 Output Charge Qoss 8.1 Gate Resistance RG 2.2 Turn-on Delay Time td (on) 8.6 Rise Time tr 21 VDS = 16V, ID = 15A nC 12 VDS = 16V, VGS = 0 Ω VDD = 16V, I D = 15A ns Turn-off Delay Time td Fall Time tf 43 Input Capacitance Ciss – 1801 – Output Capacitance Coss – 723 – Reverse Transfer Capacitance Crss – 46 – Typ Max Units 1.3 V (off) VGS = ±20V VGS = 5V Clamped Inductive Load 10 pF VDS = 16V, VGS = 0 Source-Drain Rating & Characteristics Parameter Min Diode Forward Voltage VSD Reverse Recovery Charge Qrr Reverse Recovery Charge (with Parallel Schottky) Qrr(s) 50 nC Conditions IS = 15A, VGS = 0V di/dt ~ 700A/µs VDS = 16V, VGS = 0V, IS = 15A 43 nC di/dt = 700A/µs (with 10BQ040) VDS = 16V, VGS = 0V, IS = 15A Notes: 2 Repetitive rating; pulse width limited by max. junction temperature. Pulse width ≤ 400 µs; duty cycle ≤ 2%. When mounted on 1 inch square copper board, t < 10 sec. Typ = measured - Qoss Typical values of RDS(on) measured at VGS = 4.5V, Q G, QSW and QOSS measured at VGS = 5.0V, IF = 15A. www.irf.com 2.0 6 VGS , Gate-to-Source Voltage (V) I D = 15A 1.5 (Normalized) RDS(on) , Drain-to-Source On Resistance IRF7811AV 1.0 0.5 4 2 V GS = 4.5V 0.0 -60 -40 -20 0 20 40 60 80 100 120 140 0 160 0 ( ° C) T J , Junction Temperature 5 10 15 20 Q G , Total Gate Charge (nC) Figure 1. Normalized On-Resistance vs. Temperature Figure 2. Gate-to-Source Voltage vs. Typical Gate Charge 0.020 3000 V GS = 0V, f = 1 MHZ Ciss = C gs + C gd , Cds SHORTED Crss = C gd I D = 15A 0.018 2500 Coss = C ds + C gd C, Capacitance(pF) RDS(on) , Drain-to -Source On Resistance (Ω) ID = 15A VDS = 16V 0.016 0.014 0.012 Ciss 2000 Coss 1500 1000 0.010 500 0.008 0 Crss 3.0 6.0 9.0 12.0 15.0 1 V GS, Gate -to -Source Voltage (V) Figure 3. Typical Rds(on) vs. Gate-to-Source Voltage 100 Figure 4. Typical Capacitance vs. Drain-to-Source Voltage 100 ISD , Reverse Drain Current (A) 100 I D , Drain-to-Source Current (A) 10 V DS , Drain-to-Source Voltage (V) T J = 150 °C 10 TJ = 25 °C 1 V DS = 15V 20µs PULSE WIDTH 0.1 2.0 2.5 3.0 3.5 4.0 4.5 V GS, Gate-to-Source Voltage (V) Figure 5. Typical Transfer Characteristics www.irf.com TJ = 150 °C 10 TJ = 25 °C 1 V GS= 0 V 0.1 5.0 0.3 0.6 0.9 1.2 1.5 V SD ,Source-to-Drain Voltage (V) Figure 6. Typical Source-Drain Diode Forward Voltage 3 IRF7811AV Thermal Response (Z thJA ) 100 D = 0.50 10 0.20 0.10 0.05 P DM 0.02 1 0.01 t1 SINGLE PULSE (THERMAL RESPONSE) t2 Notes: 1. Duty factor D = t 1 / t 2 2. Peak TJ = P DM x Z thJA + TA 0.1 0.0001 0.001 0.01 0.1 1 10 100 1000 t1, Rectangular Pulse Duration (sec) Figure 7. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient 50 u 8V 5 uH S c h o t tk y - 6 A VDD 450 50 u 16Vz500m W R e p e titi o n r a te :1 0 0 H z 125nS M ic 4 4 5 2 B M 450 5 0 O h m s p ro b e Vds 90% 10% V gs t d(on) t d(off) t f(v) t r(v) Switching Time Waveforms Figure 8. Clamped Inductive load test diagram and switching waveform 4 www.irf.com IRF7811AV SO-8 Package Details D IM D -B - 5 E -A - 5 A 8 7 6 5 1 2 3 4 e 6X H 0 .2 5 (.0 1 0 ) M A M θ e1 K x 4 5° -C - 0 .1 0 (.0 0 4 ) B 8X 0 .2 5 (.0 1 0 ) A1 L 8X 6 C 8X M C A S B S NOTES: 1 . D IM E N S IO N IN G A N D T O L E R A N C IN G P E R A N S I Y 1 4 .5 M -1 9 8 2 . 2 . C O N T R O L L IN G D IM E N S IO N : IN C H . 3 . D IM E N S IO N S A R E S H O W N IN M IL L IM E T E R S (IN C H E S ). 4 . O U T L IN E C O N F O R M S T O J E D E C O U T L IN E M S -0 1 2 A A . 5 D IM E N S IO N D O E S N O T IN C L U D E M O L D P R O T R U S IO N S M O L D P R O T R U S IO N S N O T T O E X C E E D 0 .2 5 (.0 0 6 ). 6 D IM E N S IO N S IS T H E L E N G T H O F L E A D F O R S O L D E R IN G T O A S U B S T R A T E .. M IN M AX .05 32 .06 88 1.3 5 1.75 .00 40 .00 98 0.1 0 0.25 B .01 4 .01 8 0.3 6 0.46 C .00 75 .009 8 0.19 0.25 D .18 9 .196 4.80 4.98 E .15 0 .15 7 3.8 1 3.99 e1 A M ILLIM E T E R S M AX A1 e θ IN C H E S M IN .05 0 B A S IC 1.27 B A S IC .02 5 B A S IC 0 .635 B A S IC H .22 84 .244 0 K .01 1 .01 9 0.2 8 5.8 0 0.48 6.20 L 0.16 .05 0 0.4 1 1.27 θ 0° 8° 0° 8° R E C O M M E N D E D F O O T P R IN T 0 .7 2 (.0 2 8 ) 8X 6 .4 6 ( .2 5 5 ) 1 .7 8 (.0 7 0 ) 8X 1 .2 7 ( .0 5 0 ) 3X SO-8 Part Marking www.irf.com 5 IRF7811AV SO-8 Tape and Reel TER M IN AL N UM B ER 1 1 2.3 ( .484 ) 1 1.7 ( .461 ) 8.1 ( .318 ) 7.9 ( .312 ) F EE D D IRE C TIO N N OT E S : 1 . CO NT RO L L ING DIM E NSIO N : M IL L IM E T E R . 2 . AL L DIM E NS ION S ARE SHO W N IN M ILL IM E TER S (INC HE S ). 3 . OU TL IN E CO N FO RM S T O E IA -4 8 1 & E IA -5 4 1 . 33 0.00 (12.992) M AX . 14.4 0 ( .566 ) 12.4 0 ( .488 ) N O T ES : 1 . CO NT RO LL ING D IM EN SIO N : M ILLIME TER . 2 . O U TLIN E C O NF O RM S T O E IA-48 1 & E IA -54 1. Data and specifications subject to change without notice. This product has been designed and qualified for the industrial market. Qualification Standards can be found on IR’s Web site. IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information.12/00 6 www.irf.com