PD – 96031A
IRF7805PbF
HEXFET® Chip-Set for DC-DC Converters
•
•
•
•
•
N Channel Application Specific MOSFETs
Ideal for Mobile DC-DC Converters
Low Conduction Losses
Low Switching Losses
Lead-Free
Description
This new device employs advanced HEXFET Power
MOSFET technology to achieve an unprecedented
balance of on-resistance and gate charge. The
reduced conduction and switching losses make this
device ideal for high efficiency DC-DC Converters that
power the latest generation of mobile
microprocessors.
The IRF7805PbF offers maximum efficiency for
mobile CPU core DC-DC converters.
A
D
S
1
8
S
2
7
D
S
3
6
D
G
4
5
D
SO-8
T o p V ie w
Device Features
RDS(on)
IRF7805PbF
30V
11mΩ
Qg
31nC
Qsw
11.5nC
Qoss
36nC
VDS
Absolute Maximum Ratings
Parameter
VDS
Drain-to-Source Voltage
Max.
Units
30
V
± 12
VGS
Gate-to-Source Voltage
ID @ TA = 25°C
Continuous Drain Current, VGS @ 10V
13
ID @ TA = 70°C
Continuous Drain Current, VGS
10
IDM
Pulsed Drain Current
PD @TA = 25°C
Power Dissipation
c
PD @TA = 70°C
e
Power Dissipation e
TJ
Linear Derating Factor
Operating Junction and
TSTG
Storage Temperature Range
e
@ 10V e
A
100
2.5
W
1.6
0.02
-55 to + 150
W/°C
°C
Thermal Resistance
Parameter
RθJL
RθJA
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g
Junction-to-Ambient eg
Junction-to-Drain Lead
Typ.
Max.
Units
–––
20
°C/W
–––
50
1
01/09/08
IRF7805PbF
Static @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
RDS(on)
VGS(th)
h
Static Drain-to-Source On-Resistanceh
Gate Threshold Voltage h
IDSS
Drain-to-Source Leakage Current
BVDSS
Drain-to-Source Breakdown Voltage
–––
–––
V
VGS = 0V, ID = 250µA
–––
1.0
9.2
–––
11
3.0
mΩ
V
VGS = 4.5V, ID = 7.0A
VDS = VGS, ID = 250µA
–––
–––
–––
–––
70
10
µA
VDS = 30V, VGS = 0V
VDS = 24V, VGS = 0V
IGSS
Gate-to-Source Forward Leakage
–––
–––
–––
–––
150
100
Qg
Gate-to-Source Reverse Leakage
Total Gate Charge
–––
–––
–––
22
-100
31
Pre-Vth Gate-to-Source Charge
Post-Vth Gate-to-Source Charge
–––
–––
3.7
1.4
–––
–––
–––
–––
6.8
8.2
–––
11.5
Qoss
Gate-to-Drain Charge
Switch Charge (Qgs2 + Qgd)
Output Charge
–––
3.0
RG
td(on)
tr
Gate Resistance
Turn-On Delay Time
Rise Time
0.5
–––
–––
–––
16
20
td(off)
tf
Turn-Off Delay Time
Fall Time
–––
–––
38
16
–––
–––
h
Qgs1
Qgs2
Qgd
Qsw
h
h
Conditions
30
nA
VDS = 24V, VGS = 0V, TJ = 100°C
VGS = 12V
VGS = -12V
VGS = 5.0V
nC
VDS = 16V
ID = 7.0A
3.6
nC
VDS = 16V, VGS = 0V
1.7
–––
–––
Ω
ns
d
VDD = 16V, VGS = 4.5V
ID = 7.0A
e
RG= 2Ω
Resistive Load
Diode Characteristics
Parameter
Min. Typ. Max. Units
IS
Continuous Source Current
–––
–––
2.5
ISM
(Body Diode)
Pulsed Source Current
–––
–––
106
VSD
Qrr
(Body Diode)
Diode Forward Voltage
Reverse Recovery Charge
–––
–––
–––
88
1.2
–––
–––
55
–––
c
h
Qrr(s)
Reverse Recovery Charge
(with Parallel Schottky)
f
f
Conditions
MOSFET symbol
A
showing the
integral reverse
V
p-n junction diode.
TJ = 25°C, IS = 7.0A, VGS = 0V
di/dt = 700A/µs
nC
nC
VDS = 16V, VGS = 0V, IS = 7.0A
di/dt = 700A/µs (with 10BQ040)
VDS = 16V, VGS = 0V, IS = 7.0A
Notes:
2
Repetitive rating; pulse width limited by max. junction temperature.
Pulse width ≤ 300 µs; duty cycle ≤ 2%.
When mounted on 1 inch square copper board, t < 10 sec.
Typ = measured - Qoss
Rθ is measured at TJ of approximately 90°C.
Devices are 100% tested to these parameters.
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IRF7805PbF
Typical Characteristics
Fig 1. Normalized On-Resistance vs. Temperature
Fig 2. Typical Gate Charge vs. Gate-to-Source Voltage
ISD , Reverse Drain Current (A)
10
TJ = 150 °C
1
TJ = 25 °C
V GS = 0 V
0.1
0.4
0.5
0.6
0.7
0.8
0.9
VSD ,Source-to-Drain Voltage (V)
Fig 4. Typical Source-Drain Diode Forward Voltage
Fig 3. Typical Rds(on) vs. Gate-to-Source Voltage
Thermal Response (Z thJA )
100
D = 0.50
10
0.20
0.10
0.05
1
0.1
0.001
0.02
0.01
P DM
SINGLE PULSE
(THERMAL RESPONSE)
t1
t2
Notes:
1. Duty factor D = t 1 / t 2
2. Peak T J = P DM x Z thJA + TA
0.01
0.1
1
10
100
1000
t1 , Rectangular Pulse Duration (sec)
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Figure 5. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
3
IRF7805PbF
SO-8 Package Details
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SO-8 Part Marking
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Note: For the most current drawing please refer to IR website at http://www.irf.com/package/
4
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IRF7805PbF
SO-8 Tape and Reel
TERMINAL NUMBER 1
12.3 ( .484 )
11.7 ( .461 )
8.1 ( .318 )
7.9 ( .312 )
FEED DIRECTION
NOTES:
1. CONTROLLING DIMENSION : MILLIMETER.
2. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS(INCHES).
3. OUTLINE CONFORMS TO EIA-481 & EIA-541.
330.00
(12.992)
MAX.
14.40 ( .566 )
12.40 ( .488 )
NOTES :
1. CONTROLLING DIMENSION : MILLIMETER.
2. OUTLINE CONFORMS TO EIA-481 & EIA-541.
Note: For the most current drawing please refer to IR website at http://www.irf.com/package/
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information.01/2008
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