PD - 95093A IRLR8103VPbF • • • • • N-Channel Application-Specific MOSFETs Ideal for CPU Core DC-DC Converters Low Conduction Losses Low Switching Losses Minimizes Parallel MOSFETs for high current applications D • 100% RG Tested • Lead-Free G Description This new device employs advanced HEXFET Power MOSFET technology to achieve an unprecedented balance of on-resistance and gate charge. The reduced conduction and switching losses make it ideal for high efficiency DCDC converters that power the latest generation of microprocessors. D-Pak S DEVICE CHARACTERISTICS The IRLR8103V has been optimized for all parameters that are critical in synchronous buck converters including RDS(on), gate charge and Cdv/dt-induced turn-on immunity. The IRLR8103V offers an extremely low combination of Qsw & RDS(on) for reduced losses in both control and synchronous FET applications. IRLR8103V 7.9 mΩ RDS(on) QG QSW The package is designed for vapor phase, infra-red, convection, or wave soldering techniques. Power dissipation of greater than 2W is possible in a typical PCB mount application. 27 nC 12 nC QOSS 29nC Absolute Maximum Ratings Parameter Symbol IRLR8103V Drain-Source Voltage VDS 30 Gate-Source Voltage VGS ±20 Continuous Drain or Source Current TC = 25°C (VGS > 10V) TC= 90°C c TC = 25°C Power Dissipation e TC = 90°C Pulsed Drain Current Junction & Storage Temperature Range Continuous Source Current (Body Diode) Pulsed Source Current c Units V 91 ID A 63 363 IDM 115 PD TJ , TSTG 60 -55 to 150 IS 91 ISM 363 W °C A Thermal Resistance Parameter Maximum Junction-to-Ambient Maximum Junction-to-Case www.irf.com h eh Symbol Typ. Max. RθJA ––– 50 RθJC ––– 1.09 Units °C/W 1 12/0604 IRLR8103VPbF Electrical Characteristics Parameter Symbol Min Typ Max Units Drain-to-Source Breakdown Voltage BVDSS 30 ––– ––– Static Drain-Source RDS(on) ––– 6.9 9.0 On-Resistance Gate Threshold Voltage VGS(th) ––– 1.0 7.9 ––– 10.5 3.0 Drain-to-Source Leakage Current IDSS ––– ––– 50 ––– ––– 20 ––– 100 ––– ±100 V mΩ V µA µA Conditions VGS = 0V, ID = 250µA VGS = 10V, ID = 15A VGS = 4.5V, ID = 15A d d VDS = VGS, ID = 250µA VDS = 30V, VGS = 0V VDS = 24V, VGS = 0 VDS = 24V, VGS = 0, TJ = 100°C Gate-Source Leakage Current IGSS ––– ––– Total Gate Charge, Control FET QG ––– 27 ––– VGS = 5V, ID = 15A, VDS = 16V Total Gate Charge, Synch FET QG ––– 23 ––– VGS = 5V, VDS < 100mV Pre-Vth Gate-Source Charge QGS1 ––– 4.7 ––– Post-Vth Gate-Source Charge QGS2 ––– 2.0 ––– Gate to Drain Charge QGD ––– 9.7 ––– Switch Charge (Qgs2 + Qgd) QSW ––– 12 ––– Output Charge QOSS ––– 29 ––– Gate Resistance RG 0.8 ––– 3.1 Turn-On Delay Time td(on) ––– 10 ––– VDD = 16V Rise Time tr ––– 9 ––– ID = 15A Turn-Off Delay Time td(off) ––– 24 ––– Fall Time tf ––– 18 ––– Input Capacitance Ciss ––– 2672 ––– Output Capacitance Coss ––– 1064 ––– Reverse Transfer Capacitance Crss ––– 109 nA nC VGS = ± 20V VDS = 16V, ID = 15A VDS = 16V, VGS = 0 Ω ns VGS = 5.0V Clamped Inductive Load pF VGS = 16V, VGS=0 ––– Source-Drain Rating & Characteristics Parameter Diode Forward Voltage Reverse Recovery Charge f Symbol Min Typ Max Units d Conditions Qrr ––– ––– 0.9 103 1.3 ––– V nC IS = 15A , VGS = 0V Qrr(s) ––– 96 ––– nC di/dt = 700A/µs , (with 10BQ040) VSD di/dt ~ 700A/µs VDS = 16V, VGS = 0V, IF = 15A Reverse Recovery Charge (with Parallel Schottky) f VDS= 16V, VGS = 0V, IF = 15A Notes: 2 Repetitive rating; pulse width limited by max. junction temperature. Pulse width ≤ 400 µs; duty cycle ≤ 2%. When mounted on 1 inch square copper board, t < 10 sec. Typ = measured - Q oss Typical values of RDS(on) measured at VGS = 4.5V, QG, QSW and QOSS measured at VGS = 5.0V, IF = 15A. www.irf.com IRLR8103VPbF 1000 1000 VGS 15V 10V 7.0V 5.5V 4.5V 4.0V 3.5V BOTTOM 2.7V I D , Drain-to-Source Current (A) I D , Drain-to-Source Current (A) 100 100 2.7V 10 2.7V 10 20µs PULSE WIDTH TJ = 25 °C 1 0.1 VGS 15V 10V 7.0V 5.5V 4.5V 4.0V 3.5V BOTTOM 2.7V TOP TOP 1 10 20µs PULSE WIDTH TJ = 150 °C 1 0.1 100 1 10 100 VDS , Drain-to-Source Voltage (V) VDS , Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics RDS(on) , Drain-to-Source On Resistance (Normalized) I D , Drain-to-Source Current (A) 1000 TJ = 25 ° C TJ = 150 ° C 100 10 2.0 V DS= 15V 20µs PULSE WIDTH 3.0 4.0 5.0 6.0 VGS , Gate-to-Source Voltage (V) Fig 3. Typical Transfer Characteristics www.irf.com 7.0 2.0 ID = 15A 1.5 1.0 0.5 0.0 -60 -40 -20 VGS = 10V 0 20 40 60 80 100 120 140 160 TJ , Junction Temperature ( ° C) Fig 4. Normalized On-Resistance Vs. Temperature 3 IRLR8103VPbF VGS = Ciss = Crss = Coss = C, Capacitance (pF) 4000 3000 6 0V, f = 1MHz Cgs + Cgd , Cds SHORTED Cgd Cds + Cgd VGS , Gate-to-Source Voltage (V) 5000 Ciss 2000 Coss 1000 0 ID = 15A 5 4 3 2 1 Crss 1 10 0 100 VDS , Drain-to-Source Voltage (V) 0 10 15 20 25 30 Fig 6. Typical Gate Charge Vs. Gate-to-Source Voltage 1000 10000 OPERATION IN THIS AREA LIMITED BY RDS(on) 100 1000 ID , Drain Current (A) ISD , Reverse Drain Current (A) 5 QG , Total Gate Charge (nC) Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage TJ = 150° C 10 10us 100 TJ = 25 ° C 1 0.1 0.0 V GS = 0 V 0.4 0.8 1.2 1.6 2.0 VSD ,Source-to-Drain Voltage (V) Fig 7. Typical Source-Drain Diode Forward Voltage 4 V DS= 24V V DS= 15V 2.4 100us 1ms 10 1 10ms TC = 25 °C TJ = 150 °C Single Pulse 1 10 100 VDS , Drain-to-Source Voltage (V) Fig 8. Maximum Safe Operating Area www.irf.com IRLR8103VPbF LIMITED BY PACKAGE VGS D.U.T. RG 80 ID , Drain Current (A) RD V DS 100 + V DD - 10V 60 Pulse Width ≤ 1 µs Duty Factor ≤ 0.1 % 40 Fig 10a. Switching Time Test Circuit VDS 20 0 90% 25 50 75 100 125 TC , Case Temperature ( ° C) 150 10% VGS td(on) Fig 9. Maximum Drain Current Vs. Case Temperature tr t d(off) tf Fig 10b. Switching Time Waveforms Thermal Response(Z thJC ) 10 1 D = 0.50 0.20 PDM 0.10 0.1 0.05 0.02 0.01 0.01 0.00001 t1 SINGLE PULSE (THERMAL RESPONSE) t2 Notes: 1. Duty factor D = t 1 / t 2 2. Peak TJ = P DM x Z thJC + TC 0.0001 0.001 0.01 0.1 t1 , Rectangular Pulse Duration (sec) Fig 11. Maximum Effective Effective Transient Transient Thermal Thermal Impedance, Impedance, Junction-to-Case Junction-to-Case www.irf.com 5 0.016 R DS(on) , Drain-to -Source On Resistance ( Ω) R DS ( on ) , Drain-to-Source On Resistance ( Ω ) IRLR8103VPbF 0.014 0.012 VGS = 4.5V 0.010 VGS = 10V 0.008 0.006 0 50 100 150 200 250 300 0.014 0.012 0.010 ID = 15A 0.008 0.006 0.0 350 2.0 4.0 6.0 8.0 VGS, Gate -to -Source Voltage (V) ID , Drain Current ( A ) Fig 12. On-Resistance Vs. Drain Current Fig 13. On-Resistance Vs. Gate Voltage Current Regulator Same Type as D.U.T. 12V QG VGS 50KΩ .2µF QGS .3µF D.U.T. + V - DS QGD VG VGS 3mA Charge IG ID Current Sampling Resistors Fig 14a&b. Basic Gate Charge Test Circuit and Waveform 6 www.irf.com IRLR8103VPbF D-Pak (TO-252AA) Package Outline Dimensions are shown in millimeters (inches) D-Pak (TO-252AA) Part Marking Information EXAMPLE: T HIS IS AN IRFR120 WITH AS S EMBLY LOT CODE 1234 AS S EMBLED ON WW 16, 1999 IN THE AS S EMBLY LINE "A" PART NUMBER INTERNATIONAL RECTIFIER LOGO Note: "P" in as sembly line pos ition indicates "Lead-Free" IRFU120 12 916A 34 AS S EMBLY LOT CODE DAT E CODE YEAR 9 = 1999 WEEK 16 LINE A OR INT ERNAT IONAL RECT IFIER LOGO PART NUMBER IRFU120 12 AS S EMBLY LOT CODE www.irf.com 34 DATE CODE P = DES IGNAT ES LEAD-FREE PRODUCT (OPT IONAL) YEAR 9 = 1999 WEEK 16 A = AS S EMBLY S ITE CODE 7 IRLR8103VPbF D-Pak (TO-252AA) Tape & Reel Information Dimensions are shown in millimeters (inches) TR TRR 16.3 ( .641 ) 15.7 ( .619 ) 12.1 ( .476 ) 11.9 ( .469 ) FEED DIRECTION TRL 16.3 ( .641 ) 15.7 ( .619 ) 8.1 ( .318 ) 7.9 ( .312 ) FEED DIRECTION NOTES : 1. CONTROLLING DIMENSION : MILLIMETER. 2. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS ( INCHES ). 3. OUTLINE CONFORMS TO EIA-481 & EIA-541. 13 INCH 16 mm NOTES : 1. OUTLINE CONFORMS TO EIA-481. Data and specifications subject to change without notice. IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information.12/04 8 www.irf.com