BCR179.../SEMB4 PNP Silicon Digital Transistor • Switching circuit, inverter, interface circuit, driver circuit. • Built in bias resistor (R1 = 10kΩ) • For 6-PIN packages: two (galvanic) internal isolated transistors with good matching in one package BCR179F/L3 BCR179T SEMB4 C C1 B2 E2 3 6 5 4 R1 R1 R1 TR2 TR1 1 B 2 1 2 3 E E1 B1 C2 EHA07180 EHA07266 Type Marking Pin Configuration BCR179F WWs 1=B 2=E 3=C - - - TSFP-3 BCR179L3 WW 1=B 2=E 3=C - - - TSLP-3-4 BCR179T WWs 1=B 2=E 3=C - - - SC75 SEMB4 WW 1=E1 2=B1 3=C2 4=E2 5=B2 6=C1 SOT666 1 Package May-17-2004 BCR179.../SEMB4 Maximum Ratings Parameter Symbol Value Collector-emitter voltage VCEO 50 Collector-base voltage VCBO 50 Emitter-base voltage VEBO 5 Input on voltage Vi(on) 20 Collector current IC 100 Total power dissipation Ptot 250 BCR179L3, TS ≤ 135°C 250 BCR179T, TS ≤ 109°C 250 SEMB4, TS ≤ 75°C 250 Tj Storage temperature Tstg Thermal Resistance Parameter Junction - soldering point1) Symbol RthJS V mA mW BCR179F, TS ≤ 128°C Junction temperature Unit 150 °C 150 ... -65 Value BCR179F ≤ 90 BCR179L3 ≤ 60 BCR179T ≤ 109 SEMB4 ≤ 300 Unit K/W 1For calculation of R thJA please refer to Application Note Thermal Resistance 2 May-17-2004 BCR179.../SEMB4 Electrical Characteristics at TA = 25°C, unless otherwise specified Parameter Symbol Values Unit min. typ. max. DC Characteristics Collector-emitter breakdown voltage V(BR)CEO 50 V IC = 100 µA, IB = 0 Collector-base breakdown voltage V(BR)CBO 50 - - V(BR)EBO 5 - - I CBO - - 100 nA h FE 120 - 630 - - - 0,3 V Vi(off) 0,4 - 1 Vi(on) 0,5 - 1,1 R1 7 10 13 fT - 150 - MHz Ccb - 1,2 - pF IC = 10 µA, IE = 0 Emitter-base breakdown voltage IE = 10 µA, IC = 0 Collector-base cutoff current VCB = 40 V, IE = 0 DC current gain1) IC = 5 mA, VCE = 5 V Collector-emitter saturation voltage1) VCEsat IC = 10 mA, IB = 0,5 mA Input off voltage IC = 100 °C, VCE = 5 V Input on voltage IC = 2 mA, VCE = 0,3 V Input resistor kΩ AC Characteristics Transition frequency IC = 10 mA, VCE = 5 V, f = 100 MHz Collector-base capacitance VCB = 10 V, f = 1 MHz 1Pulse test: t < 300µs; D < 2% 3 May-17-2004 BCR179.../SEMB4 DC current gain hFE = ƒ(IC) VCE = 5 V (common emitter configuration) Collector-emitter saturation voltage VCEsat = ƒ(IC), hFE = 20 10 3 10 -1 A IC h FE 10 -2 10 2 10 -3 10 1 -4 10 10 -3 10 -2 A 10 10 -4 0 -1 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 IC V 1 VCEsat Input on Voltage Vi(on) = ƒ(I C) VCE = 0.3V (common emitter configuration) Input off voltage V i(off) = ƒ(IC) VCE = 5V (common emitter configuration) 10 -2 10 -1 A A 10 -3 IC IC 10 -2 10 -4 10 -3 10 -5 10 -4 -1 10 10 0 10 1 V 10 10 -6 0 2 Vi(on) 0.5 1 V 2 Vi(off) 4 May-17-2004 BCR179.../SEMB4 Total power dissipation Ptot = ƒ(TS) Total power dissipation Ptot = ƒ(TS) BCR179F BCR179L3 300 300 mW 200 P tot P tot mW 200 150 150 100 100 50 50 0 0 20 40 60 80 100 120 °C 0 0 150 20 40 60 80 100 TS 120 °C Total power dissipation Ptot = ƒ(TS) Total power dissipation Ptot = ƒ(TS) BCR179T SEMB4 300 300 mW mW 200 Ptot Ptot 150 TS 200 150 150 100 100 50 50 0 0 20 40 60 80 100 120 °C 0 0 150 TS 20 40 60 80 100 120 °C 150 TS 5 May-17-2004 BCR179.../SEMB4 Permissible Puls Load RthJS = ƒ (tp) Permissible Pulse Load BCR179F Ptotmax/P totDC = ƒ(tp) BCR179F 10 2 10 3 D=0.5 0.2 0.1 0.05 0.02 0.01 0.005 0 10 1 10 0 10 -1 -6 10 P totmax/P totDC RthJS K/W 10 -5 10 -4 10 -3 10 2 D=0 0.005 0.01 0.02 0.05 0.1 0.2 0.5 10 1 10 -2 s 10 10 0 -6 10 0 10 -5 10 -4 10 -3 10 -2 s tp Permissible Pulse Load BCR179L3 Ptotmax/P totDC = ƒ(tp) BCR179L3 10 0 10 3 Ptotmax/ PtotDC RthJS 10 2 1 0.5 0.2 0.1 0.05 0.02 0.01 0.005 D=0 10 0 10 -1 -7 10 0 tp Permissible Puls Load RthJS = ƒ (tp) 10 10 10 -6 10 -5 10 -4 10 -3 10 -2 10 D=0 0.005 0.01 0.02 0.05 0.1 0.2 0.5 2 10 1 s 10 10 0 -7 10 0 tp 10 -6 10 -5 10 -4 10 -3 10 -2 s tp 6 May-17-2004 BCR179.../SEMB4 Permissible Puls Load RthJS = ƒ (tp) Permissible Pulse Load BCR179T Ptotmax/P totDC = ƒ(tp) BCR179T 10 3 10 3 P totmax / P totDC K/W RthJS 10 2 D=0 0.005 0.01 0.02 0.05 0.1 0.2 0.5 10 2 10 1 D=0.5 0.2 0.1 0.05 0.02 0.01 0.005 0 10 0 10 -1 -6 10 10 -5 10 -4 10 10 1 -3 10 -2 s 10 10 0 -6 10 0 10 -5 10 -4 10 -3 10 -2 s tp 10 0 10 0 tp Permissible Puls Load RthJS = ƒ (tp) Permissible Pulse Load SEMB4 Ptotmax/P totDC = ƒ(tp) SEMB4 10 3 10 3 Ptotmax / PtotDC K/W RthJS 10 2 0.5 0.2 0.1 0.05 0.02 0.01 0.005 D=0 10 1 10 0 10 -1 -7 10 10 -6 10 -5 10 -4 10 -3 10 -2 10 2 D=0 0.005 0.01 0.02 0.05 0.1 0.2 0.5 10 1 s 10 10 0 -7 10 0 tp 10 -6 10 -5 10 -4 10 -3 10 -2 s tp 7 May-17-2004