BCR103... NPN Silicon Digital Transistor • Switching circuit, inverter, interface circuit, driver circuit • Built in bias resistor (R1=2.2kΩ, R2=2.2kΩ) • For 6-PIN packages: two (galvanic) internal isolated transistors with good matching in one package BCR103/F BCR103L3/T BCR103U C C1 B2 3 6 5 E2 4 R2 R1 R1 TR2 TR1 R2 R1 R2 1 B 2 1 2 3 E E1 B1 C2 EHA07174 EHA07184 Type Marking Pin Configuration BCR103 WAs 1=B 2=E 3=C - - - SOT23 BCR103F WAs 1=B 2=E 3=C - - - TSFP-3 BCR103L3 WA 1=B 2=E 3=C - - - TSLP-3-4 BCR103T WAs 1=B 2=E 3=C - - - SC75 BCR103U WAs 1=E1 2=B1 3=C2 4=E2 5=B2 6=C1 SC74 1 Package Aug-29-2003 BCR103... Maximum Ratings Parameter Symbol Collector-emitter voltage VCEO 50 Collector-base voltage VCBO 50 Emitter-base voltage VEBO 5 Input on voltage Vi(on) 10 Collector current IC 100 Total power dissipation- Ptot Value 200 BCR103F, TS ≤ 128°C 250 BCR103L3, TS ≤ 135°C 250 BCR103T, TS ≤ 109°C 250 BCR103U, TS ≤ 118°C 250 Tj Storage temperature Tstg Thermal Resistance Parameter Junction - soldering point 1) Symbol RthJS V mA mW BCR103, TS ≤ 102°C Junction temperature Unit 150 °C -65 ... 150 Value Unit K/W ≤ 240 BCR103 BCR103F ≤ 90 BCR103L3 ≤ 60 BCR103T ≤ 165 BCR103U ≤ 133 1For calculation of R thJA please refer to Application Note Thermal Resistance 2 Aug-29-2003 BCR103... Electrical Characteristics at TA = 25°C, unless otherwise specified Parameter Symbol Values Unit min. typ. max. DC Characteristics Collector-emitter breakdown voltage V(BR)CEO 50 V IC = 100 µA, IB = 0 Collector-base breakdown voltage 50 - - I CBO - - 100 nA I EBO - - 3.5 mA h FE 20 - - - - - 0.3 V Vi(off) 0.8 - 1.5 Vi(on) 0.8 - 2.5 Input resistor R1 1.5 2.2 2.9 kΩ Resistor ratio R1/R 2 0.9 1 1.1 - fT - 140 - MHz Ccb - 3 - pF V(BR)CBO IC = 10 µA, IE = 0 Collector-base cutoff current VCB = 40 V, IE = 0 Emitter-base cutoff current VEB = 10 V, IC = 0 DC current gain1) IC = 20 mA, VCE = 5 V Collector-emitter saturation voltage1) VCEsat IC = 20 mA, IB = 1 mA Input off voltage IC = 100 µA, VCE = 5 V Input on voltage IC = 2 mA, VCE = 0.3 V AC Characteristics Transition frequency IC = 10 mA, VCE = 5 V, f = 1 MHz Collector-base capacitance VCB = 10 V, f = 1 MHz 1Pulse test: t < 300µs; D < 2% 3 Aug-29-2003 BCR103... DC current gain hFE = ƒ(IC) VCE = 5V (common emitter configuration) Collector-emitter saturation voltage VCEsat = ƒ(IC), hFE = 20 10 3 10 2 A IC h FE 10 2 10 1 10 1 10 0 10 -1 -4 10 10 -3 10 -2 A 10 10 0 0 -1 V 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 IC 1 VCEsat Input on Voltage Vi(on) = ƒ(I C) VCE = 0.3V (common emitter configuration) Input off voltage V i(off) = ƒ(IC) VCE = 5V (common emitter configuration) 10 -2 10 -1 A A 10 -3 IC IC 10 -2 10 -4 10 -3 10 -5 10 -4 -1 10 10 0 10 1 V 10 10 -6 0.6 2 Vi(on) 0.8 1 1.2 1.4 V 1.7 Vi(off) 4 Aug-29-2003 BCR103... Total power dissipation Ptot = ƒ(TS) BCR103 Total power dissipation Ptot = ƒ(TS) BCR103F 300 300 mW 200 P tot P tot mW 200 150 150 100 100 50 50 0 0 20 40 60 80 100 120 °C 0 0 150 20 40 60 80 100 TS 150 TS Total power dissipation Ptot = ƒ(TS) BCR103L3 Total power dissipation Ptot = ƒ(TS) BCR103T 300 300 mW mW 200 Ptot Ptot 120 °C 200 150 150 100 100 50 50 0 0 20 40 60 80 100 120 °C 0 0 150 TS 20 40 60 80 100 120 °C 150 TS 5 Aug-29-2003 BCR103... Total power dissipation Ptot = ƒ(TS) BCR103U Permissible Pulse Load RthJS = ƒ(t p) BCR103 10 3 300 K/W mW RthJS P tot 10 2 200 10 1 150 0.5 0.2 0.1 0.05 0.02 0.01 0.005 D=0 100 10 0 50 0 0 20 40 60 80 120 °C 100 10 -1 -6 10 150 10 -5 10 -4 10 -3 10 -2 TS 0 10 0 Permissible Puls Load R thJS = ƒ (tp) BCR103F Ptotmax/P totDC = ƒ(tp) BCR103 10 3 10 2 - K/W D=0 0.005 0.01 0.02 0.05 0.1 0.2 0.5 10 2 RthJS Ptotmax / PtotDC 10 tp Permissible Pulse Load 10 1 10 0 -6 10 s D=0.5 0.2 0.1 0.05 0.02 0.01 0.005 0 10 1 10 0 10 -5 10 -4 10 -3 10 -2 s 10 10 -1 -6 10 0 tp 10 -5 10 -4 10 -3 10 -2 s tp 6 Aug-29-2003 BCR103... Permissible Puls Load R thJS = ƒ (tp) BCR103L3 Permissible Pulse Load Ptotmax/P totDC = ƒ(tp) BCR103F 10 2 10 2 D=0 0.005 0.01 0.02 0.05 0.1 0.2 0.5 10 1 10 0 -6 10 RthJS P totmax/P totDC 10 3 10 -5 10 -4 10 10 1 0.5 0.2 0.1 0.05 0.02 0.01 0.005 D=0 10 0 -3 10 -2 s 10 10 -1 -7 10 0 10 -6 10 -5 10 -4 10 -3 10 tp -2 s 10 0 10 0 tp Permissible Puls Load R thJS = ƒ (tp) BCR103T Permissible Pulse Load Ptotmax/P totDC = ƒ(tp) BCR103L3 10 3 10 3 10 2 D=0 0.005 0.01 0.02 0.05 0.1 0.2 0.5 10 2 RthJS Ptotmax/ PtotDC K/W 10 1 D=0.5 0.2 0.1 0.05 0.02 0.01 0.005 0 10 1 10 0 10 0 -7 10 10 -6 10 -5 10 -4 10 -3 10 -2 s 10 10 -1 -6 10 0 tp 10 -5 10 -4 10 -3 10 -2 s tp 7 Aug-29-2003 BCR103... Permissible Puls Load R thJS = ƒ (tp) BCR103U Permissible Pulse Load Ptotmax/P totDC = ƒ(tp) BCR103T 10 3 10 3 10 2 D=0 0.005 0.01 0.02 0.05 0.1 0.2 0.5 10 2 10 1 RthJS P totmax / P totDC K/W 10 1 D=0.5 0.2 0.1 0.05 0.02 0.01 0.005 0 10 0 10 0 -6 10 10 -5 10 -4 10 -3 10 -2 s 10 10 -1 -6 10 0 tp 10 -5 10 -4 10 -3 10 -2 s 10 0 tp Permissible Pulse Load Ptotmax/P totDC = ƒ(tp) BCR103U Ptotmax / PtotDC 10 3 D=0 0.005 0.01 0.02 0.05 0.1 0.2 0.5 10 2 10 1 10 0 -6 10 10 -5 10 -4 10 -3 10 -2 s 10 0 tp 8 Aug-29-2003