NPN Silicon Transistors SMBT 6428 SMBT 6429 For AF input stages and driver applications ● High current gain ● Low collector-emitter saturation voltage ● Type Marking Ordering Code (tape and reel) Pin Configuration 1 2 3 Package1) SMBT 6428 SMBT 6429 s1K s1L Q68000-A8321 Q68000-A8322 B SOT-23 E C Maximum Ratings Parameter Symbol Values SMBT 6428 SMBT 6429 Unit Collector-emitter voltage VCE0 50 45 V Collector-base voltage VCB0 60 55 Emitter-base voltage VEB0 Collector current IC 200 mA Total power dissipation, TS = 71 ˚C Ptot 330 mW Junction temperature Tj 150 ˚C Storage temperature range Tstg 6 – 65 … + 150 Thermal Resistance Junction - ambient2) Rth JA ≤ 310 Junction - soldering point Rth JS ≤ 240 1) 2) K/W For detailed information see chapter Package Outlines. Package mounted on epoxy pcb 40 mm × 40 mm × 1.5 mm/6 cm2 Cu. Semiconductor Group 1 5.91 SMBT 6428 SMBT 6429 Electrical Characteristics at TA = 25 ˚C, unless otherwise specified. Parameter Symbol Values Unit min. typ. max. 50 45 – – – – 60 55 – – – – 6 – – – – – – 10 10 nA µA nA DC characteristics Collector-emitter breakdown voltage IC = 1 mA SMBT 6428 SMBT 6429 V(BR)CE0 Collector-base breakdown voltage IC = 10 µA SMBT 6428 SMBT 6429 V(BR)CB0 Emitter-base breakdown voltage IE = 1 µA V(BR)EB0 Collector-base cutoff current VCB = 30 V, IE = 0 VCB = 30 V, IE = 0, TA = 150 ˚C ICB0 Collector cutoff current VCE = 30 V, IB = 0 ICE0 – – 100 Emitter-base cutoff current VEB = 5 V, IC = 0 IEB0 – – 10 DC current gain IC = 10 µA, VCE = 5 V hFE IC = 100 µA, VCE = 5 V IC = 1 mA, VCE = 5 V IC = 10 mA, VCE = 5 V SMBT 6428 SMBT 6429 SMBT 6428 SMBT 6429 SMBT 6428 SMBT 6429 SMBT 6428 SMBT 6429 VCEsat Base-emitter voltage IC = 1 mA, VCE = 5 V VBE(on) Pulse test conditions: t ≤ 300 µs, D ≤ 2 %. Semiconductor Group – 250 500 250 500 250 500 250 500 Collector-emitter saturation voltage1) IC = 10 mA, IB = 0.5 mA IC = 100 mA, IB = 5 mA 1) V 2 – – – – – – – – – – 650 1250 – – – – V – – – – 0.2 0.6 0.56 – 0.66 SMBT 6428 SMBT 6429 Electrical Characteristics at TA = 25 ˚C, unless otherwise specified. Parameter Symbol Values Unit min. typ. max. AC characteristics Transition frequency IC = 5 mA, VCE = 5 V, f = 100 MHz fT 100 – 700 MHz Output capacitance VCB = 10 V, f = 1 MHz Cobo – – 3 pF Input capacitance VEB = 0.5 V, f = 1 MHz Cibo – – 15 Semiconductor Group 3 SMBT 6428 SMBT 6429 Total power dissipation Ptot = f (TA*; TS) * Package mounted on epoxy Collector-base capacitance CCB0 = f (VCB0) Emitter-base capacitance CEB0 = f (VEB0) Permissible pulse load Ptot max/Ptot DC = f (tp) Transition frequency fT = f (IC) VCE = 5 V Semiconductor Group 4 SMBT 6428 SMBT 6429 Base-emitter saturation voltage IC = f (VBEsat), hFE = 40 Collector-emitter saturation voltage IC = f (VCEsat), hFE = 40 Collector current IC = f (VBE) VCE = 1 V DC current gain hFE = f (IC) VCE = 1 V Semiconductor Group 5 SMBT 6428 SMBT 6429 Collector cutoff current ICB0 = f (TA) VCB = 30 V Semiconductor Group 6