INFINEON SIGC41T120R3

SIGC41T120R3
3
IGBT Chip
FEATURES:
• 1200V Trench + Field Stop technology
• low turn-off losses
• short tail current
• positive temperature coefficient
• easy paralleling
Chip Type
SIGC41T120R3
VCE
ICn
1200V
35A
This chip is used for:
• power module
C
Applications:
• drives
Die Size
G
Package
6.5 x 6.37 mm2
sawn on foil
E
Ordering Code
Q67050A4105-A001
MECHANICAL PARAMETER:
Raster size
6.5 x 6.37
Emitter pad size
4.992 x 4.898
Gate pad size
1.139 x 1.139
Area total / active
mm
2
41.4 / 30.1
mm
Thickness
140
µm
Wafer size
150
mm
Flat position
180
grd
Max.possible chips per wafer
350 pcs
Passivation frontside
Photoimide
Emitter metallization
3200 nm AlSiCu
Collector metallization
Die bond
Wire bond
Reject Ink Dot Size
Recommended Storage Environment
1400 nm Ni Ag –system
suitable for epoxy and soft solder die bonding
electrically conductive glue or solder
Al, <500µm
∅ 0.65mm ; max 1.2mm
store in original container, in dry nitrogen,
< 6 month at an ambient temperature of 23°C
Edited by INFINEON Technologies AI PS DD HV3, L7651A, Edition 2, 04.09.2003
SIGC41T120R3
MAXIMUM RATINGS:
Parameter
Symbol
Value
Unit
1200
V
1)
A
Collector-emitter voltage, Tj=25 °C
V CE
DC collector current, limited by Tjmax
IC
Pulsed collector current, tp limited by Tjmax
Icpuls
105
A
Gate emitter voltage
V GE
±20
V
Operating junction and storage temperature
Tj, Ts t g
-55 ... +150
°C
1)
depending on thermal properties of assembly
STATIC CHARACTERISTICS (tested on chip), Tj=25 °C, unless otherwise specified:
Parameter
Symbol
Value
Conditions
min.
Unit
typ.
max.
Collector-emitter breakdown voltage
V(BR)CES
VGE=0V , IC= 1.5mA
1200
Collector-emitter saturation voltage
VCE(sat)
VGE=15V, IC =35A
1.4
1.7
2.1
Gate-emitter threshold voltage
VGE(th)
IC =1.5mA , VGE=VCE
5.0
5.8
6.5
Zero gate voltage collector current
ICES
VCE=1200V , VGE=0V
4.8
µA
Gate-emitter leakage current
IGES
VCE=0V , VGE=20V
600
nA
Integrated gate resistor
RGint
V
Ω
6
ELECTRICAL CHARACTERISTICS (tested at component):
Parameter
Symbol
Conditions
Value
min.
typ.
Input capacitance
Ci s s
V C E= 2 5 V ,
Output capacitance
Co s s
V GE= 0 V ,
132
Reverse transfer capacitance
Cr s s
f =1MHz
115
max.
2530
Unit
pF
SWITCHING CHARACTERISTICS (tested at component), Inductive Load
Parameter
Symbol
Conditions 1)
Value
min.
typ.
Turn-on delay time
t d(on)
Tj= 1 2 5 ° C
90
Rise time
tr
V C C =600V,
45
IC=35A,
Turn-off delay time
td(off)
V GE= - 1 5 / 1 5 V ,
Fall time
tf
R G = 2 7Ω
1)
values also influenced by parasitic L- and C- in measurement and package.
Edited by INFINEON Technologies AI PS DD HV3, L7651A, Edition 2, 04.09.2003
520
90
max.
Unit
ns
SIGC41T120R3
CHIP DRAWING:
Edited by INFINEON Technologies AI PS DD HV3, L7651A, Edition 2, 04.09.2003
SIGC41T120R3
FURTHER ELECTRICAL CHARACTERISTICS:
This chip data sheet refers to the
device data sheet
tbd
DESCRIPTION:
AQL 0,65 for visual inspection according to failure catalog
Electrostatic Discharge Sensitive Device according to MIL-STD 883
Test-Normen Villach/Prüffeld
Published by
Infineon Technologies AG,
Bereich Kommunikation
St.-Martin-Strasse 53,
D-81541 München
© Infineon Technologies AG 2002
All Rights Reserved.
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characteristics.
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regarding circuits, descriptions and charts stated herein.
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in question please contact your nearest Infineon Technologies Office.
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Edited by INFINEON Technologies AI PS DD HV3, L7651A, Edition 2, 04.09.2003