INFINEON SIDC59D170H_04

SIDC59D170H
Fast switching diode chip in EMCON 3 -Technology
FEATURES:
• 1700V EMCON 3 technology 200 µm chip
• soft, fast switching
• low reverse recovery charge
• small temperature coefficient
Chip Type
VR
IF
SIDC59D170H
1700V 100A
A
This chip is used for:
• EUPEC power modules
C
Applications:
• resonant applications, drives
Die Size
Package
7.7 x 7.7 mm2
Ordering Code
sawn on foil
Q67050-A4176A001
MECHANICAL PARAMETER:
Raster size
Area total / active
Anode pad size
7.7 x 7.7
59.29 / 45.35
mm
2
5.68 x 5.68
Thickness
200
µm
Wafer size
150
mm
Flat position
180
deg
Max. possible chips per wafer
238 pcs
Passivation frontside
Photoimide
Anode metallization
3200 nm Al Si Cu
Cathode metallization
Die bond
Wire bond
Reject Ink Dot Size
Recommended Storage Environment
Ni Ag –system
suitable for epoxy and soft solder die bonding
electrically conductive glue or solder
Al, ≤500µm
∅ 0.65mm; max 1.2mm
store in original container, in dry nitrogen,
< 6 month at an ambient temperature of 23°C
Edited by INFINEON Technologies AI DP PSD CLS, L 4481A, Edition 2, 2.11.2004
SIDC59D170H
Maximum Ratings
Parameter
Symbol
Repetitive peak reverse voltage
VRRM
Continuous forward current limited by
Tjmax
Single pulse forward current
(depending on wire bond configuration)
Maximum repetitive forward current
limited by Tjmax
Operating junction and storage
temperature
Condition
Value
1700
IF
Unit
V
100
I FSM
tP = 10 ms sinusoidal
A
540
I FRM
200
Tj , Ts t g
-55...+150
°C
Static Electrical Characteristics (tested on chip), Tj=25 °C, unless otherwise specified
Parameter
Symbol
Reverse leakage current
IR
Cathode-Anode
breakdown Voltage
V Br
Forward voltage drop
VF
Conditions
V R= 1 7 0 0 V
Tj= 2 5 ° C
I R= 0 . 2 5 m A
Tj= 2 5 ° C
I F =100A
Tj= 2 5 ° C
Value
min.
Typ.
max.
27
1700
Unit
µA
V
1.8
V
Dynamic Electrical Characteristics, at Tj = 25 °C, unless otherwise specified, tested at component
Parameter
Peak recovery current
Reverse recovery charge
Peak recovery energy
Symbol
Conditions
IRRM1
I F= 1 0 0 A
IRRM2
di/dt=1170 A/ µs
V R =900V
Qrr1
I F= 1 0 0 A
Qrr2
di/dt=1170 A/ µs
V R =900V
E rec 1
Erec2
Value
min.
Typ.
T j = 25 °C
123
Tj = 125 °C
133
Tj= 2 5 ° C
26.7
Tj= 1 2 5 ° C
43.3
I F= 1 0 0 A
T j = 25 ° C
13.3
di/dt=1170 A/ µs
V R =900V
Tj= 1 2 5 ° C
23.3
Edited by INFINEON Technologies AI DP PSD CLS, L 4481A, Edition 2, 2.11.2004
max.
Unit
A
µC
mJ
SIDC59D170H
CHIP DRAWING:
Edited by INFINEON Technologies AI DP PSD CLS, L 4481A, Edition 2, 2.11.2004
SIDC59D170H
FURTHER ELECTRICAL CHARACTERISTICS:
This chip data sheet refers to the
device data sheet
INFINEON TECHNOLOGIES /
EUPEC
tbd
Description:
AQL 0,65 for visual inspection according to failure catalog
Electrostatic Discharge Sensitive Device according to MIL-STD 883
Test-Normen Villach/Prüffeld
Published by
Infineon Technologies AG
Bereich Kommunikation
St.-Martin-Strasse 53
D-81541 München
© Infineon Technologies AG 2000
All Rights Reserved.
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in question please contact your nearest Infineon Technologies Office.
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Edited by INFINEON Technologies AI DP PSD CLS, L 4481A, Edition 2, 2.11.2004