INFINEON Q67050-A4006-A001

SIDC09D60E6
Fast switching diode chip in EMCON-Technology
FEATURES:
• 600V EMCON technology 70 µm chip
• soft , fast switching
• low reverse recovery charge
• small temperature coefficient
Chip Type
VR
SIDC09D60E6
600V
IF
20A
A
This chip is used for:
• EUPEC power modules and
discrete devices
C
Applications:
• SMPS, resonant applications,
drives
Die Size
Package
3 x 3 mm2
sawn on foil
Ordering Code
Q67050-A4006A001
MECHANICAL PARAMETER:
Raster size
Area total / active
Anode pad size
3x3
9 / 6.7
mm
2
2.51 x 2.51
Thickness
70
µm
Wafer size
150
mm
Flat position
180
deg
Max. possible chips per wafer
1667 pcs
Passivation frontside
Photoimide
Anode metallisation
3200 nm AlSiCu
Cathode metallisation
Die bond
Wire bond
Reject Ink Dot Size
Recommended Storage Environment
1400 nm Ni Ag –system
suitable for epoxy and soft solder die bonding
electrically conductive glue or solder
Al, ≤500µm
∅ 0.65mm ; max 1.2mm
store in original container, in dry nitrogen,
< 6 month at an ambient temperature of 23°C
Edited by INFINEON Technologies AI PS DD CLS, L 4303M, Edition 2, 20.07.04
SIDC09D60E6
Maximum Ratings
Parameter
Symbol
Repetitive peak reverse voltage
VRRM
600
IF
20
Continuous forward current limited by
Tjmax
Single pulse forward current
(depending on wire bond configuration)
Maximum repetitive forward current
limited by Tjmax
Operating junction and storage
temperature
Condition
Value
tP = 10 ms sinusoidal
I FSM
V
A
80
T j = 25°C
I FRM
Unit
60
Tj , Ts t g
-55...+150
°C
Static Electrical Characteristics (tested on chip), Tj=25 °C, unless otherwise specified
Parameter
Symbol
Conditions
Value
min.
Reverse leakage current
IR
V R =600V
Tj= 2 5 ° C
Cathode-Anode
breakdown Voltage
V Br
I R= 3 m A
Tj= 2 5 ° C
600
Forward voltage drop
VF
I F= 2 0 A
Tj= 2 5 ° C
-
Typ.
max.
Unit
27
µA
V
1.25
1.7
V
Dynamic Electrical Characteristics, at Tj = 25 °C, unless otherwise specified, tested at component
Parameter
Reverse recovery time
Symbol
t rr1
Conditions
I F =20A
Value
min.
Typ.
Tj = 2 5 ° C
150
Reverse recovery charge
Unit
ns
di/dt=700A/µs
Peak recovery current
max.
t rr2
V R =400V
Tj = 1 2 5 ° C
200
IRRM1
I F =20A
Tj = 2 5 ° C
20
IRRM2
di/dt=900A/µs
VR = 3 0 0 V
Tj = 1 2 5 ° C
25
Qrr1
I F =20A
Tj= 2 5 ° C
1.7
Qrr2
di/dt=900A/µs
VR = 3 0 0 V
Tj= 1 2 5 ° C
2.7
Edited by INFINEON Technologies AI PS DD CLS, L 4303M, Edition 2, 20.07.04
A
µC
SIDC09D60E6
CHIP DRAWING:
Edited by INFINEON Technologies AI PS DD CLS, L 4303M, Edition 2, 20.07.04
SIDC09D60E6
FURTHER ELECTRICAL CHARACTERISTICS:
This chip data sheet refers to the
device data sheet
INFINEON TECHNOLOGIES /
EUPEC
tbd
Description:
AQL 0,65 for visual inspection according to failure catalog
Electrostatic Discharge Sensitive Device according to MIL-STD 883
Test-Normen Villach/Prüffeld
Published by
Infineon Technologies AG
Bereich Kommunikation
St.-Martin-Strasse 53
D-81541 München
© Infineon Technologies AG 2000
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Edited by INFINEON Technologies AI PS DD CLS, L 4303M, Edition 2, 20.07.04