IPD90N04S4-03 OptiMOS®-T2 Power-Transistor Product Summary V DS 40 V R DS(on),max 3.2 mΩ ID 90 A Features • N-channel - Enhancement mode PG-TO252-3-313 • AEC qualified • MSL1 up to 260°C peak reflow • 175°C operating temperature • Green Product (RoHS compliant) • 100% Avalanche tested Type Package Marking IPD90N04S4-03 PG-TO252-3-313 4N0403 Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Symbol Continuous drain current1) ID Conditions Value T C=25°C, V GS=10V 90 T C=100°C, V GS=10V2) 90 Unit A Pulsed drain current2) I D,pulse T C=25°C 360 Avalanche energy, single pulse2) E AS I D=45A 185 mJ Avalanche current, single pulse I AS - 90 A Gate source voltage V GS - ±20 V Power dissipation P tot T C=25°C 94 W Operating and storage temperature T j, T stg - -55 ... +175 °C IEC climatic category; DIN IEC 68-1 - - 55/175/56 Rev. 1.0 page 1 2010-04-13 IPD90N04S4-03 Parameter Symbol Values Conditions Unit min. typ. max. Thermal characteristics2) Thermal resistance, junction - case R thJC - - - 1.6 Thermal resistance, junction ambient, leaded R thJA - - - 62 SMD version, device on PCB R thJA minimal footprint - - 62 6 cm2 cooling area3) - - 40 K/W Electrical characteristics, at T j=25 °C, unless otherwise specified Static characteristics Drain-source breakdown voltage V (BR)DSS V GS=0V, I D= 1mA 40 - - Gate threshold voltage V GS(th) V DS=V GS, I D=53µA 2.0 3.0 4.0 Zero gate voltage drain current I DSS V DS=40V, V GS=0V, T j=25°C - 0.03 1 - 1 20 V DS=18V, V GS=0V, T j=85°C2) V µA Gate-source leakage current I GSS V GS=20V, V DS=0V - - 100 nA Drain-source on-state resistance R DS(on) V GS=10V, I D=90A - 2.7 3.2 mΩ Rev. 1.0 page 2 2010-04-13 IPD90N04S4-03 Parameter Symbol Values Conditions Unit min. typ. max. - 4050 5260 - 950 1230 Dynamic characteristics2) Input capacitance C iss Output capacitance C oss Reverse transfer capacitance Crss - 31 71 Turn-on delay time t d(on) - 14 - Rise time tr - 11 - Turn-off delay time t d(off) - 14 - Fall time tf - 15 - Gate to source charge Q gs - 24 31 Gate to drain charge Q gd - 7 17 Gate charge total Qg - 51 66 Gate plateau voltage V plateau - 5.8 - V - - 90 A - - 360 V GS=0 V, V DS=25 V, f =1 MHz V DD=20V, V GS=10V, I D=90A, R G=3.5Ω pF ns Gate Charge Characteristics2) V DD=32V, I D=90A, V GS=0 to 10V nC Reverse Diode Diode continous forward current2) IS Diode pulse current2) I S,pulse Diode forward voltage V SD V GS=0V, I F=90A, T j=25°C - 0.9 1.3 V Reverse recovery time2) t rr V R=20V, I F=50A, di F/dt =100A/µs - 43 - ns Reverse recovery charge2) Q rr - 44 - nC T C=25°C 1) Current is limited by bondwire; with an R thJC = 1.6K/W the chip is able to carry 130A at 25°C. 2) Defined by design. Not subject to production test. 3) Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm 2 (one layer, 70 µm thick) copper area for drain connection. PCB is vertical in still air. Rev. 1.0 page 3 2010-04-13 IPD90N04S4-03 1 Power dissipation 2 Drain current P tot = f(T C); V GS ≥ 6 V I D = f(T C); V GS ≥ 6 V 100 100 90 80 80 70 60 I D [A] P tot [W] 60 50 40 40 30 20 20 10 0 0 0 50 100 150 0 200 50 100 T C [°C] 150 200 T C [°C] 3 Safe operating area 4 Max. transient thermal impedance I D = f(V DS); T C = 25 °C; D = 0 Z thJC = f(t p) parameter: t p parameter: D =t p/T 1000 101 1 µs 10 µs 0.5 100 100 I D [A] Z thJC [K/W] 100 µs 0.1 10-1 0.05 0.01 10 1 ms 10-2 10-3 1 0.1 1 10 100 10-6 10-5 10-4 10-3 10-2 10-1 100 t p [s] V DS [V] Rev. 1.0 single pulse page 4 2010-04-13 IPD90N04S4-03 5 Typ. output characteristics 6 Typ. drain-source on-state resistance I D = f(V DS); T j = 25 °C R DS(on) = f(I D); T j = 25 °C parameter: V GS parameter: V GS 10 360 10 V 6V 5.5 V 320 9 7V 280 8 240 7 R DS(on) [mΩ] I D [A] 6.5 V 200 160 6V 120 6 6.5 V 5 7V 4 80 5.5 V 40 5V 3 10 V 2 0 1 0 1 2 3 4 0 40 80 V DS [V] 120 160 I D [A] 7 Typ. transfer characteristics 8 Typ. drain-source on-state resistance I D = f(V GS); V DS = 6V R DS(on) = f(T j); I D = 90 A; V GS = 10 V parameter: T j 5 300 4.5 250 4 R DS(on) [mΩ] 350 I D [A] 200 150 100 3.5 3 2.5 175 °C 25 °C 50 2 -55 °C 0 3 4 5 6 7 V GS [V] Rev. 1.0 1.5 -60 -20 20 60 100 140 180 T j [°C] page 5 2010-04-13 IPD90N04S4-03 9 Typ. gate threshold voltage 10 Typ. capacitances V GS(th) = f(T j); V GS = V DS C = f(V DS); V GS = 0 V; f = 1 MHz parameter: I D 104 4 Ciss C [pF] V GS(th) [V] 3.5 530 µA 3 103 Coss 53 µA 2.5 102 2 Crss 101 1.5 -60 -20 20 60 100 140 0 180 5 10 15 20 25 30 V DS [V] T j [°C] 11 Typical forward diode characteristicis 12 Avalanche characteristics IF = f(VSD) I A S= f(t AV) parameter: T j parameter: T j(start) 3 10 100 25 °C 100 °C 102 175°C I AV [A] I F [A] 150 °C 25°C 10 101 100 1 0 0.2 0.4 0.6 0.8 1 1.2 1.4 V SD [V] Rev. 1.0 1 10 100 1000 t AV [µs] page 6 2010-04-13 IPD90N04S4-03 13 Avalanche energy 14 Drain-source breakdown voltage E AS = f(T j) V BR(DSS) = f(T j); I D = 1 mA parameter: I D 44 400 350 22.5 A 300 42 V BR(DSS) [V] E AS [mJ] 250 200 45 A 150 40 100 90 A 50 38 0 25 75 125 -55 175 -15 T j [°C] 25 65 105 145 T j [°C] 15 Typ. gate charge 16 Gate charge waveforms V GS = f(Q gate); I D = 90 A pulsed parameter: V DD 10 8V V GS 32 V 9 Qg 8 7 V GS [V] 6 5 V g s(th) 4 3 2 Q g (th) Q sw 1 Q gs 0 0 20 40 Q gate Q gd 60 Q gate [nC] Rev. 1.0 page 7 2010-04-13 IPD90N04S4-03 Published by Infineon Technologies AG 81726 Munich, Germany © Infineon Technologies AG 2010 All Rights Reserved. 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Infineon Technologies components may be used in life-support devices or systems only with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. Rev. 1.0 page 8 2010-04-13 IPD90N04S4-03 Revision History Version Date Changes Revision 1.0 Rev. 1.0 13.04.2010 Final Data Sheet page 9 2010-04-13