INFINEON PTF180901F

Product Brief
PTF180901
GSM/EDGE RF Power FET
The PTF180901
Performance
One of our new line of GSM/EDGE/CDMA2000 devices, the PTF180901
is optimized for the DCS and PCS bands. This device operates at 47%
efficiency with 13.5 dB of gain and produces 115 W, P -1dB . This high-gain
high-efficiency device is ideal to power your amplifier design.
A laterally diffused single-ended GOLDMOS ® FET, it incorporates full
gold metallization and integrated ESD protection to ensure excellent
lifetime and reliability.
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Features
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Optimized for bandwidths 1805 MHz – 1880 MHz and
1930 MHz – 1990 MHz
Improved ruggedness
Broadband internal matching
Full gold metallization
Integrated ESD protection: Human Body Model, Class 1 (minimum)
Excellent thermal stability
Low HCI drift
Capable of handling 10:1 VSWR @ 28 V, 90 W (CW) output power
Typical EDGE performance
– Average output power = 35 W
– Gain = 14.5 dB
– Efficiency = 32%
– EVM = 1.7% AVG
– ACPR @ 400 KHz = -60 dBc
– ACPR @ 600 KHz = -74 dBc
Typical two-tone performance
– Output power = 90 W PEP
– Gain = 15 dB
– Efficiency = 36%
– IM3 = -30 dBc
– 1 MHz tone spacing
Ty p e L ist
Type
Output Power
Gain
Supply Voltage Package Type
Package
PTF180901E
90 W
15 dB
28 V
Thermally enhanced
30248
PTF180901F
90 W
15 dB
28 V
Thermally enhanced, 31248
earless
www.infineon.com/wireless
Wireless Communication
N e v e r
s t o p
t h i n k i n g .
Product Brief
Performance
Characteristics
Ty p i ca l E D G E E VM Pe r fo r ma n ce
VDD = 28 V, IDQ = 1.2 A, fC = 1989.1 MHz
4.0
40
%
%
30
3.0
25
2.5
EVM
2.0
20
1.5
15
1.0
10
0.5
5
0
30
40
45
Output Power
35
dBm
50
Drain Efficiency
Average EVM RMS
Efficiency
0
Tw o -To n e M e a s u r e m e n t s
V DD = 28 V, I DQ = 1.2 A, P OUT = 90 W PEP, f C = 1930 MHz, Tone Spacing = 100 kHz
Characteristic
Symbol
Min.
Typ.
Max.
Units
Gain
G ps
14
15
–
dB
Drain Efficiency
ηD
30
36
–
%
Intermodulation Distortion
IMD
–
-30
-28
dBc
Application Example
EDGE 1930 - 1990 MHz
Output Power 33 W
PTF180101S
+11.7 dBm
PTF180901
+30.7 dBm
P-1dB = 15 W
Gain = 19 dB
EVM = 1.1%
How to reach us:
http://www.infineon.com
Published by
Infineon Technologies AG,
St.-Martin-Strasse 53,
D-81669 München
© Infineon Technologies AG 2004.
All Rights Reserved.
Template: pb_tmplt.fm/4/2004-01-01
Published by Infineon Technologies AG
45.2 dBm
EDGE
VDD = 28 V
P-1dB = 115 W
Gain = 14.5 dB
EVM = 1.7%
ACPR @ 400 kHz = -60 dBc
ACPR @ 600 kHz = -74 dBc
Attention please!
The information herein is given to describe certain components
and shall not be considered as a guarantee of characteristics.
Terms of delivery and rights to technical change reserved.
We hereby disclaim any and all warranties, including but not
limited to warranties of non-infringement, regarding circuits,
descriptions and charts stated herein.
Information
For further information on technology, delivery terms
and conditions and prices please contact your nearest
Infineon Technologies Office.
Warnings
Due to technical requirements components may contain dangerous
substances. For information on the types in question please contact
your nearest Infineon Technologies Office.
Infineon Technologies Components may only be used in lifesupport devices or systems with the express written approval of
Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or
system, or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted
in the human body, or to support and/or maintain and sustain
and/or protect human life. If they fail, it is reasonable to assume
that the health of the user or other persons may be endangered.
Ordering No. B134-H8296-X-0-7600
Printed in Germany
PS 0104.5 NB