Product Brief PTF180901 GSM/EDGE RF Power FET The PTF180901 Performance One of our new line of GSM/EDGE/CDMA2000 devices, the PTF180901 is optimized for the DCS and PCS bands. This device operates at 47% efficiency with 13.5 dB of gain and produces 115 W, P -1dB . This high-gain high-efficiency device is ideal to power your amplifier design. A laterally diffused single-ended GOLDMOS ® FET, it incorporates full gold metallization and integrated ESD protection to ensure excellent lifetime and reliability. ■ ■ Features ■ ■ ■ ■ ■ ■ ■ ■ Optimized for bandwidths 1805 MHz – 1880 MHz and 1930 MHz – 1990 MHz Improved ruggedness Broadband internal matching Full gold metallization Integrated ESD protection: Human Body Model, Class 1 (minimum) Excellent thermal stability Low HCI drift Capable of handling 10:1 VSWR @ 28 V, 90 W (CW) output power Typical EDGE performance – Average output power = 35 W – Gain = 14.5 dB – Efficiency = 32% – EVM = 1.7% AVG – ACPR @ 400 KHz = -60 dBc – ACPR @ 600 KHz = -74 dBc Typical two-tone performance – Output power = 90 W PEP – Gain = 15 dB – Efficiency = 36% – IM3 = -30 dBc – 1 MHz tone spacing Ty p e L ist Type Output Power Gain Supply Voltage Package Type Package PTF180901E 90 W 15 dB 28 V Thermally enhanced 30248 PTF180901F 90 W 15 dB 28 V Thermally enhanced, 31248 earless www.infineon.com/wireless Wireless Communication N e v e r s t o p t h i n k i n g . Product Brief Performance Characteristics Ty p i ca l E D G E E VM Pe r fo r ma n ce VDD = 28 V, IDQ = 1.2 A, fC = 1989.1 MHz 4.0 40 % % 30 3.0 25 2.5 EVM 2.0 20 1.5 15 1.0 10 0.5 5 0 30 40 45 Output Power 35 dBm 50 Drain Efficiency Average EVM RMS Efficiency 0 Tw o -To n e M e a s u r e m e n t s V DD = 28 V, I DQ = 1.2 A, P OUT = 90 W PEP, f C = 1930 MHz, Tone Spacing = 100 kHz Characteristic Symbol Min. Typ. Max. Units Gain G ps 14 15 – dB Drain Efficiency ηD 30 36 – % Intermodulation Distortion IMD – -30 -28 dBc Application Example EDGE 1930 - 1990 MHz Output Power 33 W PTF180101S +11.7 dBm PTF180901 +30.7 dBm P-1dB = 15 W Gain = 19 dB EVM = 1.1% How to reach us: http://www.infineon.com Published by Infineon Technologies AG, St.-Martin-Strasse 53, D-81669 München © Infineon Technologies AG 2004. All Rights Reserved. Template: pb_tmplt.fm/4/2004-01-01 Published by Infineon Technologies AG 45.2 dBm EDGE VDD = 28 V P-1dB = 115 W Gain = 14.5 dB EVM = 1.7% ACPR @ 400 kHz = -60 dBc ACPR @ 600 kHz = -74 dBc Attention please! The information herein is given to describe certain components and shall not be considered as a guarantee of characteristics. Terms of delivery and rights to technical change reserved. We hereby disclaim any and all warranties, including but not limited to warranties of non-infringement, regarding circuits, descriptions and charts stated herein. Information For further information on technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies Office. Warnings Due to technical requirements components may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies Office. Infineon Technologies Components may only be used in lifesupport devices or systems with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. Ordering No. B134-H8296-X-0-7600 Printed in Germany PS 0104.5 NB