INFINEON PTF210301E

PTF210301
LDMOS RF Power Field Effect Transistor
30 W, 2110–2170 MHz
Description
Features
The PTF210301 is a 30 W, internally matched GOLDMOS FET intended
for WCDMA applications from 2110 to 2170 MHz. Full gold metallization
ensures excellent device lifetime and reliability.
•
Broadband internal matching
•
Typical two–carrier WCDMA performance
- Average output power = 7.0 W
- Gain = 16 dB
- Efficiency = 25%
- IM3 = –37 dBc
•
Typical CW performance
- Output power at P–1dB = 36 W
- Gain = 15 dB
- Efficiency = 53%
•
Integrated ESD protection: Human Body
Model, Class 1 (minimum)
•
Excellent thermal stability
•
Low HCI drift
•
Capable of handling 10:1 VSWR @ 28 V,
30 W (CW) output power
Two–Carrier WCDMA Drive–Up
f = 2140 MHz, 3GPP WCDMA Signal, P/A R = 8 dB,
10 MHz Carrier Spacing, VDD = 28 V, IDQ = 380 mA
-25
30
-30
25
-35
20
-40
IM3
15
-45
10
-50
Drain Efficiency (%)
IM3 (dBc), ACPR (dBc)
Efficiency
PTF210301A
Package 20265
5
ACPR
-55
0
30
32
34
36
38
40
PTF210301E
Package 30265
Average Output Power (dBm)
RF Characteristics at TCASE = 25°C unless otherwise indicated
WCDMA Measurements (not subject to production test—verified by design/characterization in Infineon test fixture)
VDD = 28 V, IDQ = 380 mA, P OUT = 36.5 dBm
f1 = 2140 MHz, f2 = 2150 MHz, 3GPP signal, channel bandwidth = 3.84 MHz , peak/average = 8 dB @ 0.01% CCDF
Characteristic
Symbol
Min
Typ
Max
Units
Intermodulation Distortion
IMD
—
–44
—
dBc
Gain
Gps
—
16
—
dB
Drain Efficiency
hD
—
20
—
%
Symbol
Min
Typ
Max
Units
Gain
Gps
14.5
16
—
dB
Drain Efficiency
ηD
15
18
—
%
Intermodulation Distortion
IMD
—
–47
–42
dBc
Two–Tone Measurements (tested in Infineon test fixture)
VDD = 28 V, IDQ = 380 mA, POUT = 9 W PEP, f = 2170 MHz, tone spacing = 1 MHz
Characteristic
ESD: Electrostatic discharge sensitive device — observe handling precautions!
Data Sheet
1
2003-12-22
PTF210301
DC Characteristics at TCASE = 25°C unless otherwise indicated
Characteristic
Conditions
Symbol
Min
Typ
Max
Units
Drain–Source Breakdown Voltage
VGS = 0 V, IDS = 10 µA
V(BR)DSS
65
—
—
V
Drain Leakage Current
VDS = 28 V, V GS = 0 V
IDSS
—
—
1.0
µA
On–State Resistance
VGS = 10 V, V DS = 0.1 V
RDS(on)
—
0.26
—
Ω
Operating Gate Voltage
VDS = 28 V, IDQ = 380 mA
VGS
2.5
3.2
4
V
Gate Leakage Current
VGS = 10 V, V DS = 0 V
IGSS
—
—
1.0
µA
Maximum Ratings
Parameter
Symbol
Value
Unit
Drain–Source Voltage
VDSS
65
V
Gate–Source Voltage
VGS
–0.5 to +12
V
Junction Temperature
TJ
200
°C
PD
116
W
0.67
W/°C
145
W
0.83
W/°C
TSTG
–40 to +150
°C
PTF210301A
RθJC
1.5
°C/W
PTF210301E
RθJC
1.2
°C/W
Total Device Dissipation
PTF210301A
Above 25°C derate by
Total Device Dissipation
PTF210301E
PD
Above 25°C derate by
Storage Temperature Range
Thermal Resistance
(TCASE = 70°C, 30 W CW)
Typical Performance (data taken in a production test fixture)
Power Sweep, CW Conditions
Broadband Performance
V DD = 28 V, IDQ = 380 mA, f = 2170 MHz
30
-5
25
Efficiency
Return Loss
20
15
-10
-15
Gain
-20
18
17
10
-25
2070 2090 2110 2130 2150 2170 2190 2210
45
16
35
Gain
15
25
14
15
13
5
0
Frequency (MHz)
Data Sheet
55
Efficiency
Drain Efficiency (%)
0
Gain (dB)
35
Input Return Loss (dB)
Gain (dB), Efficiency (%)
V DD = 28 V, IDQ = 380 mA, POUT = 39.5 dBm
10
20
30
40
Output Power (W)
2
2003-12-22
PTF210301
Typical Performance (cont.)
Intermodulation Distortion Products
vs. Tone Spacing
Intermodulation Distortion vs. Output Power
V DD = 28 V, f = 2140 MHz, Tone Spacing = 1 MHz
-25
Intermodulation Distortion
(dBc)
-25
-30
455 mA
-35
420 mA
-40
-45
-50
345 mA
-55
380 mA
-30
-35
3rd Order
-40
-45
5th
-50
-55
7th
300 mA
-60
-60
32
34
36
38
40
42
44
46
-5
Output Power, PEP (dBm)
45
-30
35
IM5
30
-40
25
-45
20
IM7
15
-55
10
-60
5
-65
-35
Efficiency
-40
0
32
36
40
44
20
-45
ACPR Up
-50
10
ACPR Low
-55
-60
48
0
28
32
36
40
Average Output Power (dBm)
Output Power, PEP (dBm)
Data Sheet
30
40
Adjacent Channel
Power Ratio (dB)
IM3
-50
35
Single–Carrier WCDMA Drive–Up
Drain Efficiency (%)
Intermodulation Distortion (dBc)
-20
-35
25
VDD = 28 V, IDQ = 380 mA, f = 2140 MHz,
3GPP WCDMA signal, TM1 w/16 DPCH, 67%
Clipping, P/A R = 8.7 dB, 3.84 MHz BW
V DD = 28 V, IDQ = 380 mA,
f = 2140 MHz, Tone Spacing = 1 MHz
Efficiency
15
Tone Spacing (MHz)
Two–Tone Drive–Up at Optimum IDQ
-25
5
Drain Efficiency (%)
3rd Order IMD (dBc)
V DD = 28V IDQ = 380 mA, f = 2140 MHz,
Output Power = 44.75 dBm PEP
3
2003-12-22
PTF210301
Typical Performance (cont.)
IM3, Drain Efficiency and Gain
vs. Supply Voltage
Gate-Source Voltage vs. Case Temperature
Voltage normalized to typical gate voltage.
Series show current.
45
1.03
-15
40
1.02
Efficiency
-20
-25
35
30
IM3 Up
-30
25
-35
20
-40
Gain
-45
Normalized Bias Voltage
-10
Gain (dB),
Drain Efficiency (%)
3rd Order Intermodulation
Distortion (dBc)
IDQ = 380 mA, f = 2140 MHz, Tone Spacing = 1 MHz,
Output Power (PEP) = 44.75 dBm
15
1.01
0.20
0.77
1.33
1.90
2.47
3.03
1.00
0.99
0.98
0.97
0.96
0.95
10
-20
23 24 25 26 27 28 29 30 31 32 33
20
60
100
Case Temperature (°C)
Supply Voltage (V)
O
Broadband Circuit Impedance Data
Z0 = 50 Ω
D
Z Source
Z Load
0.1
Z Load Ω
MHz
R
jX
R
jX
2070
12.6
–4.3
5.5
–5.7
2110
13.5
–3.8
5.1
–5.4
2140
14.2
–3.6
4.8
–4.9
2170
15.0
–3.6
4.4
–4.6
2210
16.1
–3.7
4.0
–4.3
0.5
0.4
0.3
0.1
0.0
0.2
2070 MHz
2210 MHz
2210 MHz
0.1
2070 MHz
E L EN
Z Source Ω
Frequency
Z Source
Z Load
WAV
<---
S
DT OW ARD L OA
GTHS
G
0. 2
3
Data Sheet
4
2003-12-22
PTF210301
Test Circuit
ERS210301-1
Test Circit Schematic for f = 2170 MHz
DUT
PTF210301
PCB
0.76 mm. [.030”] thick, εr = 4.5
Microstrip
l1
l2
l3
l4
l5
l6
l7
l8
l9
l10
l11
l12
l13
l14
Electrical Characteristics at 2170 MHz
0.102 λ, 50 Ω
0.078 λ, 22.8 Ω
0.098 λ, 42.8 Ω
0.053 λ, 11.6 Ω
0.136 λ, 74 Ω
0.373 λ, 54.5 Ω
0.054 λ, 11.6 Ω
0.047 λ, 18.2 Ω
0.019 λ, 28.5 Ω
0.019 λ, 14.3 Ω
0.110 λ, 50 Ω
0.087 λ, 50 Ω
0.152 λ, 52.7 Ω
0.340 λ, 50 Ω
Data Sheet
LDMOS Transistor
5
Rogers TMM4
2 oz. copper
Dimensions: W x L (mm.)
7.62 x 1.42
5.51 x 4.45
7.24 x 1.83
3.61 x 10.03
10.16 x 0.66
27.94 x 1.19
3.68 x 10.03
3.30 x 5.84
1.37 x 3.30
1.32 x 7.87
8.26 x 1.42
6.48 x 1.42
11.43 x 1.27
25.40 x 1.42
Dimensions: W xL (in.)
0.300 x 0.056
0.217 x 0.175
0.285 x 0.072
0.142 x 0.395
0.400 x 0.026
1.100 x 0.047
0.145 x 0.395
0.130 x 0.230
0.054 x 0.130
0.052 x 0.310
0.325 x 0.056
0.255 x 0.056
0.450 x 0.050
1.000 x 0.056
2003-12-22
PTF210301
Test Circuit (cont.)
Component
C1, C9
C2, C7, C10
C3, C6
C4, C11
C5
C8
C12
L1
R1, R2
Description
10 µF, 35 V Capacitor
Capacitor, 0.1 µF, 50 V
Capacitor, 11 pF
Capacitor, 33 pF
Capacitor, 2.1 pF
Capacitor, 100 µF, 50 V
Capacitor, 0.8 pF
Ferrite, 6 mm
Chip Resistor, 100 Ω, 1/8 W 1206
Manufacturer
Digi-Key
Digi-Key
ATC
ATC
ATC
Digi-Key
ATC
Philips
Digi-Key
P/N or Comment
PC56106
PCC103BCT-ND
100A 110
100A 330
100A 2R1
P5182-ND
100A 0R8
53/3/4.6-452
101ECT-ND
210301_2 for datasheet_1.DWG
Reference Circuit1 (not to scale)
1 Gerber Files for this circuit available on request
Data Sheet
6
2003-12-22
PTF210301
Ordering Information
Type
PTF210301A
PTF210301E
Package Outline
20265
30265
Package Description
Standard ceramic, flange
Thermally enhanced, flange
Marking
PTF210301A
PTF210301E
Package Outline Specifications
Package 20265, Package 30265
7.11
[.280]
(45° X 2.03
[.080])
CL
D
S
2X 2.59±0.38
[.107 ±.015]
CL
FLANGE 9.78
[.385]
15.60±0.51
[.614±.020]
LID 10.16±0.25
[.400±.010]
G
2X R1.60
[.063]
2x 7.11
[.280]
4x 1.52
[.060]
15.23
[.600]
10.16±0.25
[.400±.010]
SPH 1.57
[.062]
0.51
[.020]
3.48±0.38
[.137±.015]
0.0381 [.0015] -A-
20.31
[.800]
1.02
[.040]
ERA-H-30265-2-1-2303
Notes: Unless otherwise specified
1. Interpret dimensions and tolerances per ASME Y14.5M-1994.
2. Primary dimensions are mm. Alternate dimensions are inches.
3. Pins: D = drain, S = source, G = gate.
4. Lead thickness: 0.10 +0.051/-0.025 [.004 +.002/-.001]
Find the latest and most complete information about products and packaging at the Infineon Internet page
http://www.infineon.com/products
Data Sheet
7
2003-12-22
PTF210301
Revision History:
Previous Version:
Page
7
2003-12-22
2003-11-06, Data Sheet
Data Sheet
Subjects (major changes since last revision)
Combine PTF210301E and PTF210301A onto this Data Sheet.
Update Package Outline
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Edition 2003-12-22
Published by Infineon Technologies AG,
St.-Martin-Strasse 53,
81669 München, Germany
© Infineon Technologies AG 2003.
All Rights Reserved.
Attention please!
The information herein is given to describe certain components and shall not be considered as a guarantee of
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We hereby disclaim any and all warranties, including but not limited to warranties of non-infringement, regarding circuits,
descriptions and charts stated herein.
Information
For further information on technology, delivery terms and conditions and prices please contact your nearest Infineon
Technologies Office (www.infineon.com/rfpower).
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Due to technical requirements components may contain dangerous substances. For information on the types in question
please contact your nearest Infineon Technologies Office.
Infineon Technologies Components may only be used in life-support devices or systems with the express written approval of
Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support
device or system, or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended
to be implanted in the human body, or to support and/or maintain and sustain and/or protect human life. If they fail, it is
reasonable to assume that the health of the user or other persons may be endangered.
Data Sheet
8
2003-12-22