INFINEON BGA612

Data sheet, BGA612, Nov. 2003
BGA 612
Silicon Germanium
B r o a d b a n d M M I C A m p li f i e r
MMIC
Secure Mo bile Solu ti ons
Silico n Discre te s
N e v e r
s t o p
t h i n k i n g .
Edition 2003-11-04
Published by Infineon Technologies AG,
St.-Martin-Strasse 53,
D-81541 München
© Infineon Technologies AG 2003.
All Rights Reserved.
Attention please!
The information herein is given to describe certain components and shall not be considered as warranted characteristics.
Terms of delivery and rights to technical change reserved.
We hereby disclaim any and all warranties, including but not limited to warranties of non-infringement, regarding
circuits, descriptions and charts stated herein.
Infineon Technologies is an approved CECC manufacturer.
Information
For further information on technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies Office in Germany or our Infineon Technologies Representatives worldwide (see address list).
Warnings
Due to technical requirements components may contain dangerous substances. For information on the types in
question please contact your nearest Infineon Technologies Office.
Infineon Technologies Components may only be used in life-support devices or systems with the express written
approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure
of that life-support device or system, or to affect the safety or effectiveness of that device or system. Life support
devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain
and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may
be endangered.
BGA612
Data sheet
Revision History:
2003-11-04
Previous Version:
2002-05-27
Page
Subjects (major changes since last revision)
Preliminary status removed
For questions on technology, delivery and prices please contact the Infineon
Technologies Offices in Germany or the Infineon Technologies Companies and
Representatives worldwide: see our webpage at http://www.infineon.com
Silicon Germanium
Broadband MMIC Amplifier
BGA612
Features
• Cascadable 50Ω-gain block
• 3 dB-bandwidth: DC to 2.8 GHz with
17.0 dB typical gain at 1.0 GHz
• Compression point P-1dB = 7 dBm at 2.0 GHz
• Noise figure F50Ω = 2.35 dB at 2.0 GHz
• Absolute stable
• 70 GHz fT - Silicon Germanium technology
3
4
2
1
VPS05605
Applications
• Driver amplifier for GSM/PCS/CDMA/UMTS
• Broadband amplifier for SAT-TV & LNBs
• Broadband amplifier for CATV
Out, 3
Description
The BGA612 is a broadband matched,
general purpose MMIC amplifier in a
Darlington configuration. It is optimized
for a typical supply current of 20mA.
IN, 1
The BGA612 is based on Infineon
Technologies’ B7HF Silicon Germanium
technology.
GND, 2,4
ESD: Electrostatic discharge sensitive device, observe handling precaution!
Type
Package
Marking
Chip
BGA612
SOT343
BNs
T0545
Data sheet
4
2003-11-04
BGA612
Maximum Ratings
Parameter
Symbol
Value
Unit
VD
2.8
V
Device voltage
Device current
ID
80
mA
Current into pin In
IIn
0.7
mA
PIn
10
dBm
Ptot
225
mW
Tj
150
°C
Input power 1)
Total power dissipation, TS < 105°C
2)
Junction temperature
Ambient temperature range
TA
-65 ... +150
°C
Storage temperature range
TSTG
-65 ... +150
°C
Thermal resistance: junction-soldering point
Rth JS
200
K/W
Notes:
All Voltages refer to GND-Node
1)
Valid for ZS=ZL=50Ω, VCC=5V, RBias=135Ω
2)
TS is measured on the ground lead at the soldering point
Electrical Characteristics at TA=25°C (measured in test circuit specified in fig. 1)
VCC=5V, RBias=135Ω, Frequency=2GHz, unless otherwise specified
Parameter
Symbol
min.
typ.
max.
-
17.5
17.0
15.8
-
-
1.95
2.25
2.35
-
2
Insertion power gain
f = 0.1GHz
f = 1.0GHz
f = 2.0GHz
|S21|
Noise Figure (ZS=50Ω)
f = 0.1GHz
f = 1.0GHz
f = 2.0GHz
F50Ω
Unit
dB
dB
Output Power at 1dB Gain Compression
P-1dB
-
7
-
dBm
Output Third Order Intercept Point
OIP3
-
17
-
dBm
Input Return Loss
RLIn
-
18
-
dB
Output Return Loss
RLOut
-
21
-
dB
Total Device Current
ID
-
20
-
mA
Data sheet
5
2003-11-04
Reference Plane
BGA612
Data sheet
VCC= 5V
In
Bias-T
In
RBias = 135Ω
GND
ID
GND
VD
Out
Bias-T
Reference Plane
Out
Top View
Caution:
Device Voltage VD at Pin Out!
VD = VCC - RBias I D
Fig.1: Test Circuit for Electrical Characteristics and S-Parameters
S-Parameter VCC=5V, RBias=135Ω (see Electrical Characteristics for conditions)
Frequency S11
[GHz]
Mag
S11
Ang
S21
Mag
S21
Ang
S12
Mag
S12
Ang
S22
Mag
S22
Ang
0.1
0.1803
5.5
7.6542
177.5
0.0960
0.0
0.1497
-1.2
0.2
0.1146
7.3
7.7188
173.3
0.0964
1.2
0.1499
-4.6
0.4
0.1345
7.4
7.6068
166.6
0.0956
1.8
0.1503
-11.3
0.6
0.1307
4.4
7.5301
159.7
0.0965
2.8
0.1457
-18.2
0.8
0.1310
5.5
7.3697
153.2
0.0961
4.0
0.1384
-25.5
1.0
0.1341
3.3
7.1755
146.6
0.0969
5.1
0.1292
-33.0
1.2
0.1337
3.8
6.9799
140.8
0.0978
6.4
0.1198
-40.2
1.4
0.1311
3.8
6.7873
134.4
0.0986
6.7
0.1111
-48.5
1.6
0.1302
3.8
6.5728
129.2
0.1002
8.1
0.1033
-57.4
1.8
0.1257
-1.7
6.3555
123.6
0.1018
8.8
0.0958
-67.5
2.0
0.1258
-3.5
6.1539
118.4
0.1044
9.6
0.0891
-78.0
3.0
0.0878
-9.4
5.2390
94.7
0.1172
12.1
0.0823
-146.8
4.0
0.0409
5.2
4.4689
74.0
0.1346
11.6
0.1550
170.5
5.0
0.0517
119.1
3.8775
54.8
0.1544
8.7
0.2362
148.3
6.0
0.1209
131.0
3.3943
36.2
0.1737
3.3
0.2929
129.2
7.0
0.1796
114.7
2.9678
20.2
0.1929
-2.4
0.3527
115.2
8.0
0.2594
104.3
2.6995
2.8
0.2132
-10.7
0.4330
104.6
Data sheet
6
2003-11-04
BGA612
Data sheet
2
Power Gain |S | , G = f(f)
21
ma
V = 5V, R
= 135Ω, I = 20mA
CC
Bias
Matching |S |, |S | = f(f)
11
22
V = 5V, R
= 135Ω, I = 20mA
C
CC
20
Bias
C
0
18
Gma
−5
16
|S21|2
14
|S |, |S | [dB]
22
10
S
22
−15
11
2
|S21| , Gma [dB]
−10
12
8
S
11
−20
6
4
−25
2
0
−1
10
0
−30
−1
10
1
10
10
0
1
10
Frequency [GHz]
10
Frequency [GHz]
Output Compression Point
P
= f(I ), f = 2GHz
Power Gain |S | = f(I )
21
D
f = parameter in GHz
−1dB
20
D
20
1
18
18
2
16
16
3
14
14
4
[dBm]
8
8
−1dB
10
6
P
2
|S21| [dB]
12
12
10
8
6
6
4
4
2
2
0
0
0
20
40
60
80
0
ID [mA]
Data sheet
20
40
60
80
ID [mA]
7
2003-11-04
BGA612
Data sheet
Device Current I = f(V )
D
CC
R
= parameter in Ω
Device Current I = f(T )
D
A
V = 5V, R
= parameter in Ω
Bias
CC
80
Bias
25
0
16
27
47
24
70
120
23
60
22
68
135
21
I [mA]
40
20
D
I D [mA]
50
100
150
19
30
150
18
20
17
10
16
0
0
1
2
3
4
5
15
−40
6
−20
0
20
VCC [V]
Noise figure F = f(f)
V = 5V, R
= 135Ω, Z = 50Ω
CC
Bias
S
T = parameter in °C
A
40
60
80
TA [°C]
Package Outline
2 ±0.2
3
0.9 ±0.1
B
1.3 ±0.1
0.20
M
0.1 max
B
3
1
2
2.5
+25°C
2
F [dB]
−20°C
+0.2
acc. to
DIN 6784
2.1±0.1
4
1.25 ±0.1
A
+80°C
0.15 +0.1
-0.05
0.3 +0.1
0.6 +0.1
1.5
0.20
M
A
GPS05605
1
0.5
0
0
0.5
1
1.5
2
2.5
3
Frequency [GHz]
Data sheet
8
2003-11-04