Hyper SIDELED® Hyper-Bright LED LS A676, LA A676, LO A676 LY A676 Besondere Merkmale Gehäusefarbe: weiß als optischer Indikator einsetzbar zur Hinterleuchtung, Lichtleiter- und Linseneinkopplung für alle SMT-Bestück- und Reflow-Löttechniken geeignet gegurtet (12-mm-Filmgurt) Features ● ● ● ● ● color of package: white for use as optical indicator for backlighting, optical coupling into light pipes and lenses suitable for all SMT assebly and reflow-soldering methods available taped on reel (12 mm tape) Semiconductor Group 1 VPL06880 ● ● ● ● ● 1998-11-12 LS A676, LA A676, LO A676 LY A676 Farbe der Lichtaustrittsfläche Color of the Light Emitting Area Lichtstärke Lichtstrom Bestellnummer Luminous Intensity IF = 20 mA IV (mcd) Luminous Flux IF = 20 mA ΦV (mlm) Ordering Code 200 80 125 200 320 180 (typ.) 300 (typ.) 450 (typ.) - Q62703-Q3242 Q62703-Q3243 Q62703-Q3244 Q62703-Q3245 Q62703-Q3246 ... ... ... ... ... 320 125 200 320 500 300 (typ.) 450 (typ.) 700 (typ.) - Q62703-Q3500 Q62703-Q3501 Q62703-Q3502 Q62703-Q3503 Q62703-Q3504 40 63 100 160 63 ... ... ... ... ... 320 125 200 320 500 300 (typ.) 450 (typ.) 700 (typ.) - Q62703-Q3119 Q62703-Q3120 Q62703-Q3121 Q62703-Q3122 Q62703-Q3118 40 63 100 160 63 ... ... ... ... ... 200 125 200 320 500 300 (typ.) 450 (typ.) 700 (typ.) - Q62703-Q3251 Q62703-Q3252 Q62703-Q3253 Q62703-Q3254 Q62703-Q3255 Typ Emissionsfarbe Type Color of Emission LS A676-NR LS A676-P LS A676-Q LS A676-R LS A676-PS super-red colorless clear 25 40 63 100 40 ... ... ... ... ... LA A676-PS LA A676-Q LA A676-R LA A676-S LA A676-QT amber colorless clear 40 63 100 160 63 LO A676-PS LO A676-Q LO A676-R LO A676-S LO A676-QT orange colorless clear LY A676-PS LY A676-Q LY A676-R LY A676-S LY A676-QT yellow colorless clear Streuung der Lichtstärke in einer Verpackungseinheit I V max / I V min ≤ 2.0. Luminous intensity ratio in one packaging unit I V max / I V min ≤ 2.0. Semiconductor Group 2 1998-11-12 LS A676, LA A676, LO A676 LY A676 Grenzwerte Maximum Ratings Bezeichnung Parameter Symbol Symbol Werte Values LS, LO, LA Einheit Unit LY Betriebstemperatur Operating temperature range Top – 55 ... + 100 ˚C Lagertemperatur Storage temperature range Tstg – 55 ... + 100 ˚C Sperrschichttemperatur Junction temperature Tj + 100 ˚C Durchlaßstrom Forward current IF Stoßstrom Surge current t ≤ 10 µs, D = 0.005 IFM to be defined A Sperrspanung1) Reverse voltage1) VR 3 V Verlustleistung Power dissipation Ptot 80 mW Wärmewiderstand Thermal resistance Sperrschicht / Umgebung Junction / air Montage auf PC-board*) (Padgröße ≥ 16 mm2) mounted on PC board*) (pad size ≥ 16 mm2) Rth JA 1) 1) 2) 30 5302) 20 500 mA K/W Belastung in Sperrichtung sollte vermieden werden. Reverse biasing should be avoided. vorläufig/preliminary *) PC-board: FR4 Semiconductor Group 3 1998-11-12 LS A676, LA A676, LO A676 LY A676 Kennwerte (TA = 25 ˚C) Characteristics Bezeichnung Parameter Symbol Symbol Werte Values Einheit Unit LS LA LO LY Wellenlänge des emittierten Lichtes Wavelength at peak emission IF = 20 mA (typ.) λpeak (typ.) 645 622 610 591 nm Dominantwellenlänge Dominant wavelength IF = 20 mA (typ.) λdom (typ.) 632 615 605 587 nm Spektrale Bandbreite bei 50% Irel max Spectral bandwidth at 50% Irel max IF = 20 mA (typ.) ∆λ (typ.) 16 16 16 15 nm 2ϕ 120 120 120 120 Grad deg. Durchlaßspannung Forward voltage IF = 20 mA (typ.) VF (max.) VF 2.0 2.6 2.0 2.6 2.0 2.6 2.0 2.6 V V Sperrstrom Reverse current VR = 3 V (typ.) IR (max.) IR 0.01 10 0.01 10 0.01 10 0.01 10 µA µA Abstrahlwinkel bei 50% Iv (Vollwinkel) Viewing angle at 50% Iv Temperaturkoeffizient von λdom (IF = 20 mA) Temperature coefficient of λdom (IF = 20 mA) TCλ 0.014 0.062 0.067 0.096 nm/K Temperaturkoeffizient von λpeak, IF = 20 mA Temperature coefficient of λpeak, IF = 20 mA TCλ 0.14 0.13 0.13 nm/K (typ.) Temperaturkoeffizient von VF, IF = 20 mA (typ.) TCV Temperature coefficient of VF, IF = 20 mA (typ.) Semiconductor Group 0.13 (typ.) 4 – 1.95 – 1.78 – 1.67 – 2.51 mV/K 1998-11-12 LS A676, LA A676, LO A676 LY A676 Relative spektrale Emission Irel = f (λ), TA = 25 ˚C, IF = 10 mA Relative spectral emission V(λ) =spektrale Augenempfindlichkeit Standard eye response curve OHL00235 100 Ι rel % 80 Vλ 60 yellow orange amber super-red 40 20 0 400 450 500 550 600 650 nm λ 700 Abstrahlcharakteristik Irel = f (ϕ) Radiation characteristic 40˚ 30˚ 20˚ 10˚ 0˚ ϕ 50˚ OHL01660 1.0 0.8 0.6 60˚ 0.4 70˚ 0.2 80˚ 0 90˚ 100˚ 1.0 0.8 Semiconductor Group 0.6 0.4 0˚ 20˚ 5 40˚ 60˚ 80˚ 100˚ 120˚ 1998-11-12 LS A676, LA A676, LO A676 LY A676 Durchlaßstrom IF = f (VF) Forward current TA = 25 ˚C Relative Lichtstärke IV/IV(20 mA) = f (IF) Relative luminous intensity TA = 25 ˚C OHL00232 10 2 mA ΙF 5 ΙV OHL00233 10 1 Ι V (20 mA) 10 0 10 1 5 5 10 -1 5 superred yellow orange/amber 10 0 10 -2 5 5 10 -1 1.0 1.4 1.8 2.2 2.6 10 -3 -1 10 3.0 V 3.4 VF OHL00248 mA 10 2 ΙF OHL00238 Ι V 2.0 Ι V (25 C) Ι F mA 30 1.6 orange yellow amber super-red 25 yellow 1.2 20 15 0.8 10 orange yellow amber super-red 0.4 5 0 5 10 1 Relative Lichtstärke IV / IV(25 ˚C ) = f (TA) Relative luminous intensity IF = 10 mA Maximal zulässiger Durchlaßstrom Max. permissible forward current IF = f (TA) 35 5 10 0 0 20 40 Semiconductor Group 60 0 -20 80 C 100 TA 6 0 20 40 60 C TA 100 1998-11-12 LS A676, LA A676, LO A676 LY A676 Zulässige Impulsbelastbarkeit IF = f (tp) Permissible pulse handling capability LS, LA, LO Duty cycle D = parameter, TA = 25 ˚C OHL00321 10 1 A ΙF 5 10 Zulässige Impulsbelastbarkeit IF = f (tp) Permissible pulse handling capability LY Duty cycle D = parameter, TA = 25 ˚C tp tp D= T ΙF T D= 0.005 0.01 0.02 0.05 0.1 0 5 0.2 10 -1 0.5 5 10 -2 -5 10 10 -4 10 -3 10 -2 10 -1 10 0 10 1 s 10 2 tp Semiconductor Group 7 1998-11-12 LS A676, LA A676, LO A676 LY A676 Maßzeichnung Package Outlines (Maße in mm, wenn nicht anders angegeben) (Dimensions in mm, unless otherwise specified) 0.7 2.8 2.4 4.2 3.8 (2.4) (1.4) 3.8 3.4 (R1) GPL06880 (2.9) Cathode marking Anode (0.3) Cathode 2.54 spacing 4.2 3.8 Kathodenkennung: Cathode mark: Semiconductor Group (2.85) 1.1 0.9 abgeschrägte Ecke bevelled edge 8 1998-11-12