INFINEON BSO104N03S

BSO104N03S
OptiMOS®2 Power-Transistor
Product Summary
Features
• Fast switching MOSFET for SMPS
• Optimized technology for notebook DC/DC converters
V DS
30
V
R DS(on),max
9.7
mΩ
ID
13
A
1)
• Qualified according to JEDEC for target applications
• N-channel
• Logic level
PG-DSO-8
• Excellent gate charge x R DS(on) product (FOM)
• Very low on-resistance R DS(on)
• Superior thermal resistance
• Avalanche rated
• Pb-free plating; RoHS compliant
Type
Package
Marking
BSO104N03S
PG-DSO-8
104N3S
Maximum ratings, at T j=25 °C, unless otherwise specified
Parameter
Continuous drain current
Value
Symbol Conditions
ID
Unit
10 secs
steady state
T A=25 °C2)
13
10
T A=70 °C2)
10
8
A
Pulsed drain current
I D,pulse
T A=25 °C3)
52
Avalanche energy, single pulse
E AS
I D=13 A, R GS=25 Ω
73
mJ
Reverse diode dv /dt
dv /dt
I D=13 A, V DS=20 V,
di /dt =200 A/µs,
T j,max=150 °C
6
kV/µs
Gate source voltage
V GS
Power dissipation
P tot
Operating and storage temperature
T j, T stg
±20
T A=25 °C2)
1.56
-55 ... 150
W
°C
55/150/56
IEC climatic category; DIN IEC 68-1
Rev. 1.6
2.5
V
page 1
2008-01-16
BSO104N03S
Parameter
Values
Symbol Conditions
Unit
min.
typ.
max.
-
-
35
minimal footprint,
t p≤10 s
-
-
110
minimal footprint,
steady state
-
-
150
6 cm2 cooling area2),
t p≤10 s
-
-
50
6 cm2 cooling area2),
steady state
-
-
80
30
-
-
Thermal characteristics
Thermal resistance,
junction - soldering point
R thJS
Thermal resistance,
junction - ambient
R thJA
K/W
Electrical characteristics, at T j=25 °C, unless otherwise specified
Static characteristics
Drain-source breakdown voltage
V (BR)DSS V GS=0 V, I D=1 mA
Gate threshold voltage
V GS(th)
V DS=V GS, I D=30 µA
1.2
1.6
2
Zero gate voltage drain current
I DSS
V DS=30 V, V GS=0 V,
T j=25 °C
-
0.1
1
V DS=30 V, V GS=0 V,
T j=125 °C
-
10
100
V
µA
Gate-source leakage current
I GSS
V GS=20 V, V DS=0 V
-
10
100
nA
Drain-source on-state resistance
R DS(on)
V GS=4.5 V, I D=11 A
-
10.9
13.6
mΩ
V GS=10 V, I D=13 A
-
8.1
9.7
-
1
-
Ω
18
36
-
S
Gate resistance
RG
Transconductance
g fs
1)
|V DS|>2|I D|R DS(on)max,
I D=13 A
J-STD20 and JESD22
2)
Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 µm thick) copper area for drain
connection. PCB is vertical in still air.
3)
Rev. 1.6
See figure 3
page 2
2008-01-16
BSO104N03S
Parameter
Values
Symbol Conditions
Unit
min.
typ.
max.
-
1600
2130
-
570
760
Dynamic characteristics
Input capacitance
C iss
V GS=0 V, V DS=15 V,
f =1 MHz
Output capacitance
C oss
Reverse transfer capacitance
C rss
-
75
110
Turn-on delay time
t d(on)
-
5.0
7.5
Rise time
tr
-
4.2
6.3
Turn-off delay time
t d(off)
-
21
31
Fall time
tf
-
3.2
4.8
Gate to source charge
Q gs
-
4.5
5.9
Gate charge at threshold
Q g(th)
-
2.6
3.4
Gate to drain charge
Q gd
-
3.0
4.6
Switching charge
Q sw
-
5.0
7.1
Gate charge total
Qg
-
12
16
Gate plateau voltage
V plateau
-
2.8
-
Gate charge total, sync. FET
Q g(sync)
V DS=0.1 V,
V GS=0 to 5 V
-
11
14
Output charge
Q oss
V DD=15 V, V GS=0 V
-
14
18
-
-
2.5
-
-
52
V DD=15 V, V GS=10 V,
I D=6.5 A, R G=2.7 Ω
pF
ns
Gate Charge Characteristics 4)
V DD=15 V, I D=6.5 A,
V GS=0 to 5 V
nC
V
nC
Reverse Diode
Diode continous forward current
IS
Diode pulse current
I S,pulse
Diode forward voltage
V SD
V GS=0 V, I F=2.5 A,
T j=25 °C
-
0.74
1
V
Reverse recovery charge
Q rr
V R=12 V, I F=I S,
di F/dt =400 A/µs
-
-
10
nC
4)
Rev. 1.6
T A=25 °C
A
See figure 16 for gate charge parameter definition
page 3
2008-01-16
BSO104N03S
1 Power dissipation
2 Drain current
P tot=f(T A); t p≤10 s
I D=f(T A); V GS≥10 V; t p≤10 s
14
3
12
2.5
10
8
I D [A]
P tot [W]
2
1.5
6
1
4
0.5
2
0
0
0
40
80
120
0
160
40
80
T A [°C]
120
3 Safe operating area
4 Max. transient thermal impedance
I D=f(V DS); T A=25 °C1); D =0
Z thJS=f(t p)
parameter: t p
parameter: D =t p/T
102
160
T A [°C]
102
100
100
10 µs
0.5
100 µs
101
10
I D [A]
limited by on-state
resistance
100
0.2
10
0.1
1 ms
Z thJS [K/W]
101
1
10 ms
0.05
100
0.02
1
0.01
10 s
10-1
0.1
10-1
0.1
10-2
0.01
single pulse
DC
10-2
0.01
0.1
10
Rev. 1.6
1
-1
10
10
0
V DS [V]
10
100
1
10
2
page 4
0.00001
0.0001
0.001
0.01
0.1
1
10-5
10-4
10-3
10-2
10-1
100
t p [s]
10
101
2008-01-16
BSO104N03S
5 Typ. output characteristics
6 Typ. drain-source on resistance
I D=f(V DS); T j=25 °C
R DS(on)=f(I D); T j=25 °C
parameter: V GS
parameter: V GS
30
25
10 V
4.5 V
3.4 V
25
20
3.3 V
3.6 V
R DS(on) [mΩ]
20
I D [A]
3.2 V
15
3.1 V
15
3.8 V
4V
4.2 V
4.5 V
10
5V
3V
10
10 V
5
5
2.8 V
2.6 V
0
0
0
1
2
3
0
10
V DS [V]
20
30
20
30
I D [A]
7 Typ. transfer characteristics
8 Typ. forward transconductance
I D=f(V GS); |V DS|>2|I D|R DS(on)max
g fs=f(I D); T j=25 °C
parameter: T j
50
60
50
40
40
I D [A]
g fs [S]
30
30
20
20
10
10
125 °C
25 °C
0
0
0
1
2
3
4
Rev. 1.6
0
10
I D [A]
V GS [V]
page 5
2008-01-16
BSO104N03S
9 Drain-source on-state resistance
10 Typ. gate threshold voltage
R DS(on)=f(T j); I D=13 A; V GS=10 V
V GS(th)=f(T j); V GS=V DS
parameter: I D
20
2.5
16
2
12
V GS(th) [V]
R DS(on) [mΩ]
300 µA
98 %
typ
8
4
1.5
30 µA
1
0.5
0
0
-60
-20
20
60
100
140
180
-60
-20
20
60
100
140
180
T j [°C]
T j [°C]
11 Typ. capacitances
12 Forward characteristics of reverse diode
C =f(V DS); V GS=0 V; f =1 MHz
I F=f(V SD)
parameter: T j
104
102
10000
100
150 °C
25 °C
150 °C, 98 %
Ciss
1000
Coss
101
10
100
1
I F [A]
C [pF]
10
3
102
Crss
100
25 °C, 98%
101
10-1
10
0
5
10
15
20
25
30
V DS [V]
Rev. 1.6
0.1
0
0.2
0.4
0.6
0.8
1
1.2
V SD [V]
page 6
2008-01-16
BSO104N03S
13 Avalanche characteristics
14 Typ. gate charge
I AS=f(t AV); R GS=25 Ω
V GS=f(Q gate); I D=6.5 A pulsed
parameter: T j(start)
parameter: V DD
100
12
15 V
10
6V
24 V
8
V GS [V]
I AV [A]
25 °C
10
100 °C
6
4
125 °C
2
1
0
1
10
100
1000
0
5
10
15
20
25
30
Q gate [nC]
t AV [µs]
15 Drain-source breakdown voltage
16 Gate charge waveforms
V BR(DSS)=f(T j); I D=1 mA
36
V GS
34
Qg
32
V BR(DSS) [V]
30
28
V g s(th)
26
24
Q g(th)
22
Q sw
Q gs
20
-60
-20
20
60
100
140
Q g ate
Q gd
180
T j [°C]
Rev. 1.6
page 7
2008-01-16
BSO104N03S
Package Outline
Rev. 1.6
PG-DSO-8
page 8
2008-01-16
BSO104N03S
Published by
Infineon Technologies AG
81726 Munich, Germany
© 2007 Infineon Technologies AG
All Rights Reserved.
Legal Disclaimer
The information given in this document shall in no event be regarded as a guarantee of
conditions or characteristics. With respect to any examples or hints given herein, any typical
values stated herein and/or any information regarding the application of the device,
Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind,
including without limitation, warranties of non-infringement of intellectual property rights
of any third party.
Information
For further information on technology, delivery terms and conditions and prices, please
contact the nearest Infineon Technologies Office (www.infineon.com).
Warnings
Due to technical requirements, components may contain dangerous substances. For information
on the types in question, please contact the nearest Infineon Technologies Office.
Infineon Technologies components may be used in life-support devices or systems only with
the express written approval of Infineon Technologies, if a failure of such components can
reasonably be expected to cause the failure of that life-support device or system or to affect
the safety or effectiveness of that device or system. Life support devices or systems are
intended to be implanted in the human body or to support and/or maintain and sustain
and/or protect human life. If they fail, it is reasonable to assume that the health of the user
Rev. 1.6
page 9
2008-01-16