IPB45N06S3L-13 IPI45N06S3L-13, IPP45N06S3L-13 OptiMOS®-T Power-Transistor Product Summary Features V DS • N-channel - Logic Level - Enhancement mode 55 R DS(on),max (SMD version) • Automotive AEC Q101 qualified 13.1 ID 45 V mΩ A • MSL1 up to 260°C peak reflow • 175°C operating temperature PG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 • Green package (RoHS compliant) • Ultra low Rds(on) • 100% Avalanche tested Type Package Marking IPB45N06S3L-13 PG-TO263-3-2 3N06L13 IPI45N06S3L-13 PG-TO262-3-1 3N06L13 IPP45N06S3L-13 PG-TO220-3-1 3N06L13 Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Symbol Continuous drain current1) ID Conditions T C=25 °C, V GS=10 V T C=100 °C, V GS=10 V2) Value 45 Unit A 37 Pulsed drain current2) I D,pulse T C=25 °C 180 Avalanche energy, single pulse E AS I D=27.5 A 95 mJ Gate source voltage3) V GS ±16 V Power dissipation P tot 65 W Operating and storage temperature T j, T stg -55 ... +175 °C T C=25 °C IEC climatic category; DIN IEC 68-1 Rev. 2.2 55/175/56 page 1 2007-09-06 IPB45N06S3L-13 IPI45N06S3L-13, IPP45N06S3L-13 Parameter Symbol Values Conditions Unit min. typ. max. Thermal characteristics2) Thermal resistance, junction - case R thJC - - 2.3 Thermal resistance, junction ambient, leaded R thJA - - 62 SMD version, device on PCB R thJA minimal footprint - - 62 6 cm2 cooling area4) - - 40 K/W Electrical characteristics, at T j=25 °C, unless otherwise specified Static characteristics Drain-source breakdown voltage V (BR)DSS V GS=0 V, I D= 1 mA 55 - - Gate threshold voltage V GS(th) V DS=V GS, I D=30 µA 1.2 1.7 2.2 Zero gate voltage drain current I DSS V DS=55 V, V GS=0 V, T j=25 °C - 0.01 1 - 1 100 V DS=55 V, V GS=0 V, T j=125 °C2) V µA Gate-source leakage current I GSS V GS=16 V, V DS=0 V - 1 100 nA Drain-source on-state resistance R DS(on) V GS=5 V, I D=17 A - 20.4 25.1 mΩ V GS=5 V, I D=17 A, SMD version - 20.1 24.8 V GS=10 V, I D=26 A - 11.4 13.4 V GS=10 V, I D=26 A, SMD version - 11.1 13.1 Rev. 2.2 page 2 2007-09-06 IPB45N06S3L-13 IPI45N06S3L-13, IPP45N06S3L-13 Parameter Symbol Values Conditions Unit min. typ. max. - 3600 - - 450 - Dynamic characteristics2) Input capacitance C iss Output capacitance C oss Reverse transfer capacitance Crss - 430 - Turn-on delay time t d(on) - 13 - Rise time tr - 46 - Turn-off delay time t d(off) - 58 - Fall time tf - 124 - Gate to source charge Q gs - 19 - Gate to drain charge Q gd - 9 - Gate charge total Qg - 50 75 Gate plateau voltage V plateau - 4.9 - V - - 5 A - - 180 0.6 0.9 1.3 V - 20 - ns - 25 - nC V GS=0 V, V DS=25 V, f =1 MHz V DD=27.5 V, V GS=10 V, I D=45 A, R G=20 Ω pF ns Gate Charge Characteristics2) V DD=11 V, I D=45 A, V GS=0 to 10 V nC Reverse Diode Diode continous forward current2) IS Diode pulse current2) I S,pulse Diode forward voltage V SD Reverse recovery time2) t rr Reverse recovery charge2) Q rr T C=25 °C V GS=0 V, I F=25 A, T j=25 °C V R=27.5 V, I F=I S, di F/dt =100 A/µs 1) Current is limited by bondwire; with an R thJC = 2.3 K/W the chip is able to carry 52 A at 25°C. For detailed information see Application Note ANPS071E at www.infineon.com/optimos 2) Defined by design. Not subject to production test. 3) Qualified at -5V and +16V. 4) Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm 2 (one layer, 70 µm thick) copper area for drain connection. PCB is vertical in still air. Rev. 2.2 page 3 2007-09-06 IPB45N06S3L-13 IPI45N06S3L-13, IPP45N06S3L-13 1 Power dissipation 2 Drain current P tot = f(T C); V GS ≥ 4 V I D = f(T C); V GS ≥ 4 V 70 50 60 40 50 30 I D [A] P tot [W] 40 30 20 20 10 10 0 0 0 50 100 150 200 0 50 T C [°C] 100 150 200 T C [°C] 3 Safe operating area 4 Max. transient thermal impedance I D = f(V DS); T C = 25 °C; D = 0 Z thJC = f(t p) parameter: t p parameter: D =t p/T 1000 101 0.5 0 1 µs 100 10 0.1 Z thJC [K/W] I D [A] 10 µs 100 µs 1 ms 10-1 0.05 10 10-2 single pulse 10-3 1 0.1 1 10 100 10-6 10-5 10-4 10-3 10-2 10-1 100 t p [s] V DS [V] Rev. 2.2 10-7 page 4 2007-09-06 IPB45N06S3L-13 IPI45N06S3L-13, IPP45N06S3L-13 5 Typ. output characteristics 6 Typ. drain-source on resistance I D = f(V DS); T j = 25 °C R DS(on) = f(I D); T j = 25 °C parameter: V GS parameter: V GS 180 35 10 V 8 V10V 4.5 V 8V 5V 160 140 30 7V 120 R DS(on) [mΩ] I D [A] 6.5 V 100 6V 80 5.5 V 25 5.5 V 20 60 6V 5V 6.5 V 40 15 4.5 V 7V 8V 20 10 V 0 10 0 5 10 15 0 10 20 V DS [V] 30 40 50 I D [A] 7 Typ. transfer characteristics 8 Typ. drain-source on-state resistance I D = f(V GS); V DS = 4 V R DS(on) = f(T j); I D = 45 A; V GS = 10 V parameter: T j 100 25 -55 °C 80 20 I D [A] 60 175 °C 40 R DS(on) [mΩ] 25 °C 15 10 20 0 5 0 1 2 3 4 5 6 V GS [V] Rev. 2.2 -60 -20 20 60 100 140 180 T j [°C] page 5 2007-09-06 IPB45N06S3L-13 IPI45N06S3L-13, IPP45N06S3L-13 9 Typ. gate threshold voltage 10 Typ. capacitances V GS(th) = f(T j); V GS = V DS C = f(V DS); V GS = 0 V; f = 1 MHz parameter: I D 104 3 Ciss 2.5 300µA C [pF] V GS(th) [V] 2 1.5 30µA Coss 3 10 Crss 1 0.5 0 -60 -20 20 60 100 140 0 180 5 10 T j [°C] 15 20 25 30 V DS [V] 11 Typical forward diode characteristicis 12 Typ. avalanche characteristics IF = f(VSD) I AV = f(t AV) parameter: T j parameter: T j(start) 100 103 102 25°C I F [A] I AV [A] 100°C 150°C 10 101 175 °C 25 °C 100 1 0 0.2 0.4 0.6 0.8 1 1.2 1.4 V SD [V] Rev. 2.2 1 10 100 1000 t AV [µs] page 6 2007-09-06 IPB45N06S3L-13 IPI45N06S3L-13, IPP45N06S3L-13 13 Typical avalanche energy 14 Drain-source breakdown voltage E AS = f(T j); V BR(DSS) = (T j); I D = 1 mA parameter: I D 66 300 15 A 64 250 62 60 25 A V BR(DSS) [V] E AS [mJ] 200 150 58 56 54 45 A 100 52 50 50 48 0 46 0 50 100 150 200 -60 -20 20 60 100 140 180 T j [°C] T j [°C] 15 Typ. gate charge 16 Gate charge waveforms V GS = f(Q gate); I D = 45 A pulsed parameter: V DD 12 11V 44V VG 10 Qg V GS [V] 8 6 4 Qgat 2 Qg Qg 0 0 20 40 60 80 Q gate [nC] Rev. 2.2 page 7 2007-09-06 IPB45N06S3L-13 IPI45N06S3L-13, IPP45N06S3L-13 Published by Infineon Technologies AG 81726 Munich, Germany © Infineon Technologies AG 2007 All Rights Reserved. Legal Disclaimer The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics (“Beschaffenheitsgarantie”). With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation warranties of non‑infringement of intellectual property rights of any third party. Information For further information on technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies Office (www.infineon.com). Warnings Due to technical requirements components may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies Office. 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Rev. 2.2 page 8 2007-09-06 IPB45N06S3L-13 IPI45N06S3L-13, IPP45N06S3L-13 Revision History Version Changes Date Data Sheet 2.1 15.12.2006 Removal of ordering code Data Sheet 2.1 Implementation of avalanche 15.12.2006 current single pulse Data Sheet 2.1 Change of Rdson @ 5V to 15.12.2006 25.1mOhm Data Sheet 2.1 15.12.2006 Update of Infineon address Data Sheet 2.1 Removal of foot note 3, avalanche 15.12.2006 diagrams Data Sheet 2.1 15.12.2006 Implementation of Qrr and trr typ Data Sheet 2.1 15.12.2006 Update of disclaimer Data Sheet 2.1 Implementation of RoHS and AEC 15.12.2006 logo, update of feature list Data Sheet 2.2 Removal of avalanche current 06.09.2007 single pulse Rev. 2.2 page 9 2007-09-06