CHIPLED LY R970, LO R970, LS R970 Besondere Merkmale ● ● ● ● ● ● Gehäusebauform: 0805 Industriestandard bzgl. Lötpadraster geringe Bauteilhöhe für IR-Lötung geeignet für Hinterleuchtungen und als opt. Indikator einsetzbar gegurtet (8-mm-Filmgurt) VEO06987 Features ● ● ● ● ● ● 0805 package Industry standard footprint low profile suitable for IR reflow soldering process for use as optical indicator and backlighting available taped on reel (8 mm tape) Typ Emissionsfarbe Type Color of Emission LY R970-JO LO R970-JO LS R970-JO yellow orange super-red Semiconductor Group Farbe der Lichtaustrittsfläche Color of the Light Emitting Area colorless clear Lichtstärke Lichtstrom Bestellnummer Luminous Intensity IF = 20 mA I V (mcd) Luminous Flux IF = 20 mA ΦV (mlm) Ordering Code ≥ 4.0 (7 typ.) ≥ 4.0 (7 typ.) ≥ 4.0 (7 typ.) 60 (typ.) 60 (typ.) 60 (typ.) Q62702-P5104 Q62702-P5100 Q62702-P5102 1 1998-09-01 LY R970, LO R970, LS R970 Grenzwerte Maximum Ratings Bezeichnung Parameter Symbol Symbol Werte Values Einheit Unit Betriebstemperatur Operating temperature range Top – 30 ... + 85 °C Lagertemperatur Storage temperature range Tstg – 40 ... + 85 °C Sperrschichttemperatur Junction temperature Tj + 95 °C Durchlaßstrom Forward current IF 25 mA Stoßstrom Surge current t ≤ 10 µs, D = 0.005 IFM 0.1 A Sperrspanung Reverse voltage VR 5 V Verlustleistung, TA = 25 °C Power dissipation, TA = 25 °C Ptot 75 mW Wärmewiderstand Sperrschicht / Umgebung Thermal resistance Junction / air Rth JA 610 K/W Semiconductor Group 2 1998-09-01 LY R970, LO R970, LS R970 Kennwerte (TA = 25 °C) Characteristics Bezeichnung Parameter Symbol Symbol Werte Values Einheit Unit LY LO LS Wellenlänge des emittierten Lichtes Wavelength at peak emission IF = 20 mA (typ.) (typ.) λpeak 586 610 635 nm Dominantwellenlänge Dominant wavelength IF = 20 mA (typ.) (typ.) λdom 590 605 628 nm Spektrale Bandbreite bei 50 % Irel max Spectral bandwidth at 50 % Irel max IF = 20 mA (typ.) (typ.) ∆λ 45 40 45 nm 2ϕ 160 160 160 Grad deg. Abstrahlwinkel bei 50 % Iv (Vollwinkel) Viewing angle at 50 % Iv Durchlaßspannung Forward voltage IF = 20 mA (typ.) (max.) VF VF 2.3 2.9 2.3 2.9 2.3 2.9 V V Sperrstrom Reverse current VR = 5 V (typ.) (max.) IR IR 0.01 10 0.01 10 0.01 10 µA µA TCλpeak 0.1 0.1 0.1 nm/K Temperaturkoeffizient von λdom, IF = 20 mA (typ.) TCλdom Temperature coefficient of λdom, IF = 20 mA (typ.) 0.08 0.08 0.08 nm/K Temperaturkoeffizient von VF, IF = 20 mA (typ.) TCVF Temperature coefficient of VF, IF = 20 mA (typ.) – 1.9 – 1.9 – 1.9 mV/K Temperaturkoeffizient von λpeak (IF = 20 mA) Temperature coefficient of λpeak (IF = 20 mA) Semiconductor Group (typ.) (typ.) 3 1998-09-01 LY R970, LO R970, LS R970 Relative spektrale Emission Irel = f (λ), TA = 25 °C, IF = 20 mA Relative spectral emission V(λ) = spektrale Augenempfindlichkeit Standard eye response curve OHL00411 100 % Ι rel 80 Vλ super-red yellow 40 orange 60 20 0 400 450 500 550 600 650 nm 700 λ Abstrahlcharakteristik Irel = f (ϕ) Radiation characteristic 40˚ 30˚ 20˚ 10˚ 0˚ ϕ 50˚ OHL00408 1.0 0.8 0.6 60˚ 0.4 70˚ 0.2 80˚ 0 90˚ 100˚ 1.0 0.8 Semiconductor Group 0.6 0.4 0˚ 20˚ 4 40˚ 60˚ 80˚ 100˚ 120˚ 1998-09-01 LY R970, LO R970, LS R970 Durchlaßstrom IF = f (VF) Forward current TA = 25 °C Relative Lichtstärke IV/IV(20 mA) = f (IF) Relative luminous intensity TA = 25 °C OHL00412 10 2 OHL00414 10 1 Ι F mA ΙV Ι V (20 mA) 10 0 10 1 5 5 10 -1 5 10 0 10 -2 5 yellow super-red orange 5 super-red orange/yellow 10 -1 1.0 1.4 1.8 2.2 2.6 10 -3 10 3.0 V 3.4 -1 5 10 0 10 5 2 Relative Lichtstärke IV / IV(25 °C ) = f (TA) Relative luminous intensity IF = 20 mA Maximal zulässiger Durchlaßstrom Max. permissible forward current IF = f (TA) IF mA 10 ΙF VF OHL00418 30 mA 1 OHL00413 2.0 ΙV Ι V (25 ˚C) 25 1.6 20 1.2 yellow 15 0.8 orange super-red 10 0.4 5 0 0.0 0 10 20 30 40 50 60 70 80 ˚C 100 TA Semiconductor Group 0 20 40 60 80 ˚C 100 TA 5 1998-09-01 LY R970, LO R970, LS R970 Maßzeichnung Package Outlines (Maße in mm, wenn nicht anders angegeben) (Dimensions in mm, unless otherwise specified) 0.8 ±0.1 1.25 ±0.1 0.3 ±0.1 0.5 ±0.1 0.29 ±0.1 1.2 ±0.1 2 ±0.1 1.3 ±0.1 Kathode/ Cathode mark GEO06987 Semiconductor Group 6 1998-09-01