Silicon PIN Diodes BAR 60 BAR 61 ● RF switch ● RF attenuator for frequencies above 10 MHz Type Marking Ordering Code (tape and reel) BAR 60 60 Q62702-A786 BAR 61 61 Q62702-A120 Pin Configuration Package1) SOT-143 Maximum Ratings per Diode Parameter Symbol Values Unit Reverse voltage VR 100 V Forward current IF 140 mA Total power dissipation, TS ≤ 65 ˚C2) Ptot 250 mW Junction temperature Tj 150 ˚C Storage temperature range Tstg – 55 … + 150 Operating temperature range Top – 55 … + 150 Junction - ambient 2) Rth JA ≤ 580 Junction - soldering point Rth JS ≤ 340 Thermal Resistance 1) 2) K/W For detailed information see chapter Package Outlines. Package mounted on alumina 15 mm × 16.7 mm × 0.7 mm. Semiconductor Group 1 07.94 BAR 60 BAR 61 Electrical Characteristics per Diode at TA = 25 ˚C, unless otherwise specified. Parameter Values Symbol Unit min. typ. max. – – – – 100 1 nA µA – – 1.25 V – – 0.25 0.2 0.5 – DC/AC Characteristics Reverse current VR = 50 V VR = 100 V IR Forward voltage IF = 100 mA VF Diode capacitance VR = 50 V, f = 1 MHz VR = 0, f = 100 MHz CT Zero bias conductance VR = 0, f = 100 MHz gp – 50 – µS Charge carrier life time IF = 10 mA, IR = 6 mA τL – 1 – µs Differential forward resistance f = 100 MHz, IF = 0.01 mA IF = 0.1 mA IF = 1.0 mA IF = 10 mA rf – – – – 2800 380 45 7 – – – – Semiconductor Group 2 pF Ω BAR 60 BAR 61 Forward current IF = f (VF) Forward current IF = f (TS; TA*) *Package mounted on alumina Forward resistance rf = f (IF) f = 100 MHz Diode capacitance CT = f (VR) Semiconductor Group 3 BAR 60 BAR 61 Application circuit for attenuation networks with diode BAR 60 Application circuit for attenuation networks with diode BAR 61 Semiconductor Group 4