Silicon Switching Diodes BAS 78 A … BAS 78 D Switching applications ● High breakdown voltage ● Type Marking Ordering Code (tape and reel) BAS 78 A BAS 78 B BAS 78 C BAS 78 D BAS 78 A BAS 78 B BAS 78 C BAS 78 D Q62702-A910 Q62702-A911 Q62702-A912 Q62702-A913 Pin Configuration Package1) SOT-223 Maximum Ratings Parameter Symbol BAS 78 A Values BAS BAS 78 B 78 C BAS 78 D Unit V Reverse voltage VR 50 100 200 400 Peak reverse voltage VRM 50 100 200 400 Forward current IF 1 Peak forward current IFM 1 Surge forward current, t = 1 µs IFS 10 Total power dissipation, TS = 124 ˚C2) Ptot 1.2 W Junction temperature Tj 150 ˚C Storage temperature range Tstg A – 65 … + 150 Thermal Resistance Junction - ambient2) Rth JA ≤ 92 Junction - soldering point Rth JS ≤ 22 1) 2) K/W For detailed information see chapter Package Outlines. Package mounted on epoxy pcb 40 mm × 40 mm × 1.5 mm/6 cm2 Cu. Semiconductor Group 1 5.91 BAS 78 A … BAS 78 D Electrical Characteristics at TA = 25 ˚C, unless otherwise specified. Parameter Symbol Values Unit min. typ. max. 50 100 200 400 – – – – – – – – – – – – 1.6 2 – – – – 1 50 DC characteristics Breakdown voltage I(BR) = 100 µA V V(BR) BAS 78 A BAS 78 B BAS 78 C BAS 78 D Forward voltage1) IF = 1 A IF = 2 A VF Reverse current VR = VR max VR = VR max, TA = 150 ˚C IR µA AC characteristics Diode capacitance VR = 0, f = 1 MHz CD – 10 – pF Reverse recovery time IF = 200 mA, IR = 200 mA, RL = 100 Ω measured at IR = 20 mA trr – 1 – µs Test circuit for reverse recovery time Pulse generator: tp = 5 µs, D = 0.05 tr = 0.6 ns, Rj = 50 Ω Vp = VR + IF × Rj 1) Oscillograph: Pulse test conditions: t ≤ 300 µs, D = 2 %. Semiconductor Group 2 R = 50 Ω tr = 0.35 ns C ≤ 1 pF BAS 78 A … BAS 78 D Forward current IF = f (TA*; TS) * Package mounted on epoxy Forward current IF = f (VF) TA = 25 ˚C Reverse current IR = f (TA) VCE = 10 V Semiconductor Group 3