BAS 40W Silicon Schottky Diode ● ● ● ● General-purpose diodes for high-speed switching Circuit protection Voltage clamping High-level detecting and mixing Type Ordering Code (tape and reel) Pin Configuration 1 2 3 BAS 40-04W BAS 40-05W BAS 40-06W Q62702-A1065 Q62702-A1066 Q62702-A1067 A1 A1 C1 C1 A2 C2 Marking C1/A2 44s C1/C2 45s A1/A2 46s Package1) SOT-323 Maximum Ratings Parameter Symbol Values Unit Reverse voltage VR 40 V Forward current IF 120 mA Surge forward current, t ≤ 10 ms IFSM 200 mA Total power dissipation TS ≤ 106 °C Ptot 250 mW Junction temperature Tj 150 °C Operating temperature range Top – 55 … + 150 °C Storage temperature range Tstg – 55 … + 150 °C Junction-ambient2) Rth JA ≤ 395 K/W Junction-soldering point Rth JS ≤ 175 K/W Thermal Resistance 1) For detailed information see chapter Package Outlines. 2) Package mounted on an epoxy pcb 40 mm x 40 mm x 1.5 mm/1 cm2 Cu. Semiconductor Group 1 02.96 BAS 40W Electrical Characteristics at TA = 25 °C, unless otherwise specified. Parameter Symbol Value min. typ. Unit max. DC Characteristics Breakdown voltage I(BR) = 10 µA V(BR) Forward voltage IF = 1 mA IF = 10 mA IF = 15 mA VF Reverse current VR = 30 V VR = 40 V IR Diode capacitance VR = 0 V, f = 1 MHz CT Charge carrier life time IF = 25 mA τ Differential forward resistance RF V 40 Semiconductor Group – mV 250 350 600 310 450 720 380 500 1000 µA – – – – 1 10 pF – 3 5 – 10 – – 10 – – 2 – ps Ω IF = 10 mA, f = 10 kHz Series inductance – LS 2 nH BAS 40W Forward current IF = f (VF) Reverse current IR = f (VR) Diode capacitance CT = f (VR) Differential forward resistance RF = f (IF) Semiconductor Group 3 BAS 40W Forward current IF = f (TA; TS*) *Package mounted on epoxy Permissible load RthJS = f (tp) Permissible Pulse load IFmax/IFDC = f (tp) Semiconductor Group 4