INFINEON Q68000

Silicon Switching Diode Array
SMBD 2835
SMBD 2836
For high-speed switching applications
● Common anode
●
Type
Marking
Ordering Code
(tape and reel)
SMBD 2835
SMBD 2836
sA3
sA2
Q68000-A8547
Q68000-A8436
Pin Configuration
Package1)
SOT-23
Maximum Ratings
Parameter
Symbol
Values
Unit
SMBD 2835 SMBD 2836
Reverse voltage
VR
30
50
Peak reverse voltage
VRM
35
75
Forward current
IF
200
mA
Surge forward current, t = 1 µs
IFS
4.5
A
Total power dissipation, TS = 31 ˚C
Ptot
330
mW
Junction temperature
Tj
150
˚C
Storage temperature range
Tstg
V
– 65 … + 150
Thermal Resistance
Junction - ambient2)
Rth JA
≤
500
Junction - soldering point
Rth JS
≤
360
1)
2)
K/W
For detailed information see chapter Package Outlines.
Package mounted on epoxy pcb 40 mm × 40 mm × 1.5 mm/6 cm2 Cu.
Semiconductor Group
1
5.91
SMBD 2835
SMBD 2836
Electrical Characteristics
at TA = 25 ˚C, unless otherwise specified.
Parameter
Values
Symbol
Unit
min.
typ.
max.
35
75
–
–
–
–
–
–
–
–
–
–
855
1000
1200
DC characteristics
Breakdown voltage
I(BR) = 100 µA
V
V(BR)
SMBD 2835
SMBD 2836
Forward voltage
IF = 10 mA
IF = 50 mA
IF = 100 mA
VF
Reverse current
VR = 30 V
VR = 50 V
IR
SMBD 2835
SMBD 2836
mV
nA
–
–
–
–
100
100
AC characteristics
Diode capacitance
VR = 0, f = 1 MHz
CD
–
–
4
pF
Reverse recovery time
IF = 10 mA, IR = 10 mA, RL = 100 Ω
measured at IR = 1 mA
trr
–
–
6
ns
Test circuit for reverse recovery time
Pulse generator: tp = 100 ns, D = 0.05
tr = 0.6 ns, Rj = 50 Ω
Oscillograph:
Semiconductor Group
2
R = 50 Ω
tr = 0.35 ns
C ≤ 1 pF
SMBD 2835
SMBD 2836
Forward current IF = f (TA*; TS)
* Package mounted on epoxy
Reverse current IR = f (TA)
Forward current IF = f (VF)
TA = 25 ˚C
Peak forward current IFM = f (t)
TA = 25 ˚C
Semiconductor Group
3
SMBD 2835
SMBD 2836
Forward voltage VF = f (TA)
Semiconductor Group
4