Silicon Switching Diode Array ● BAW 101 Electrically insulated high-voltage medium-speed diodes Type Marking Ordering Code (tape and reel) BAW 101 JPs Q62702-A712 Pin Configuration Package1) SOT-143 Maximum Ratings Parameter Symbol Values Unit Reverse voltage VR 300 V Peak reverse voltage VRM 300 Forward current IF 250 Peak forward current IFM 500 Surge forward current, t = 1 µs IFS 4.5 A Total power dissipation, TS ≤ 35 ˚C Ptot 350 mW Junction temperature Tj 150 ˚C Storage temperature range Tstg – 65 … + 150 Junction - ambient2) Rth JA ≤ 470 Junction - soldering point Rth JS ≤ 330 mA Thermal Resistance 1) 2) K/W For detailed information see chapter Package Outlines. Package mounted on epoxy pcb 40 mm × 40 mm × 1.5 mm/6 cm2 Cu. Semiconductor Group 1 5.91 BAW 101 Electrical Characteristics at TA = 25 ˚C, unless otherwise specified. Parameter Values Symbol Unit min. typ. max. DC characteristics Breakdown voltage I(BR) = 100 µA V(BR) 300 – – V Forward voltage IF = 100 mA VF – – 1.3 Reverse current VR = 250 V VR = 250 V, TA = 150 ˚C IR – – – – 150 50 nA µA AC characteristics Diode capacitance VR = 0, f = 1 MHz CD – 6 – pF Reverse recovery time IF = 10 mA, IR = 10 mA, RL = 100 Ω measured at IR = 1 mA trr – 1 – µs Test circuit for reverse recovery time Pulse generator: tp = 100 ns, D = 0.05 tr = 0.6 ns, Rj = 50 Ω Oscillograph: Semiconductor Group 2 R = 50 Ω tr = 0.35 ns C ≤ 1 pF BAW 101 Forward current IF = f (TA*; TS) * Package mounted on epoxy Forward current IF = f (VF) TA = 25 ˚C Reverse current IR = f (TA) Semiconductor Group 3