Semiconductor Laser LNC703PS Semiconductor Laser for LBP(Laser Beam Printers) ø5.6 +0 –0.025 ø4.3±0.1 ø3.55±0.1 Unit : mm 2 Low current operations : 40 mA (with 12 mW output) 110˚±1˚ 2.3±0.2 1.27 0.25 Reference slot Kovar glass LD pellet Reference plane ø1.2max. 3-ø0.45 6.5±0.5 2 Low astigmatic difference 1 3 1: LD Anode 2: Common Case 3: PD Cathode ø2.0 Low drooping 3 Reference plane High output (15 mW) for increased printing speed Stable single horizontal mode oscillation PD 1 Junction plane 1.0±0.1 1.2±0.1 Features LD 0.5 max. The LNC703PS is a near infrared GaAlAs laser diode which provides continuous oscillation in single mode and is stable at low operating current. This product is characterized by a low operating current and low drooping, making it suitable for a wide range of optical information equipment. 0.4±0.1 ø1.0 min. Overview Bottom view Absolute Maximum Ratings (Ta = 25˚C) Parameter Radiant power Reverse voltage Symbol Ratings Unit PO 15 mW Laser VR 2 V PIN VR (PIN) 30 V Power dissipation Pd (PIN) 100 mW Operating ambient temperature Topr –10 to +60 ˚C Storage temperature Tstg – 40 to +80 ˚C Electro-Optical Characteristics (Ta = 25˚C) min typ max Unit Threshold current Parameter Ith CW 10 20 35 mA Operating current IOP PO = 12mW 30 40 70 mA Operating voltage VOP PO = 12mW 2.0 2.5 V λL PO = 12mW 775 785 795 nm Horizontal direction θ//* PO = 12mW 7 10 12 deg. Vertical direction θ ⊥* PO = 12mW 18 25 32 deg. 0.4 0.7 Oscillation wavelength Radiation angle Conditions Differential efficiency η PO = 9mW/I(12mW) – I(3mW) Reverse current (DC) IR VR (PIN) = 5V PIN photo current Optical axis accuracy * Symbol IP PO = 12mW, VR (PIN) = 5V X direction θX PO = 12mW –2.0 Y direction –3.0 θY PO = 12mW Droop Dr PO = 12mW, f = 600Hz, duty10% to 90% Oscillation mode Single horizontal mode 1.0 mW/mA 0.1 µA +2.0 deg. +3.0 deg. 10 % 0.3 4 mA θ// and θ⊥are the angles where the optical intencity is a half of its max. value. ( half full angle ) 1 Semiconductor Laser LNC703PS PO — IOP I—V 15 Far field pattern 200 100 Ta = 25˚C Relative radiant power ∆PO 80 100 I (mA) 10.0 7.5 0 Current Radiant power PO (mW) 12.5 5.0 –100 2.5 0 0 20 40 –200 –4 60 –2 0 Ith — Ta 10 3 30 50 50 70 Ambient temperature Ta (˚C ) PO — Ta Id — Ta VR (PIN) = 30V PIN dark current Id (nA) Radiant power PO (mW) 10 15 10 5 1 10 –1 10 –2 10 30 50 70 Ambient temperature Ta (˚C ) 2 10 –3 – 10 10 30 50 Ambient temperature Ta (˚C ) 400 300 200 100 –10 10 30 50 Ambient temperature Ta (˚C ) 10 2 20 40 VR (PIN) = 5V PO = 12mW PIN photo current 30 20 IP — Ta PO = 12mW 10 0 500 IP (µA) Ambient temperature Ta (˚C ) 0 – 10 20 Angle θ (deg.) 10 2 10 – 10 70 θ⊥ 20 0 40 4 IOP (mA) Operating current Ith (mA) 10 10 θ// IOP — Ta 10 2 1 – 10 40 Voltage V (V) Operating current IOP (mA) Threshold current 2 60 70 70