FINAL PRODUCT/PROCESS CHANGE NOTIFICATION #16795 Generic Copy Issue Date: 18-Jan-2012 TITLE: NCP502 and MC78LCxx Family Transfer Wafer fab from Aizu to Gresham PROPOSED FIRST SHIP DATE: 18-Apr-2012 AFFECTED CHANGE CATEGORY(S): Wafer Fab Change FOR ANY QUESTIONS CONCERNING THIS NOTIFICATION: Contact your local ON Semiconductor Sales Office or <[email protected]> SAMPLES: Contact your local ON Semiconductor Sales Office or [email protected] ADDITIONAL RELIABILITY DATA: Available Contact your local ON Semiconductor Sales Office or <[email protected]> NOTIFICATION TYPE: Final Product/Process Change Notification (FPCN) Final change notification sent to customers. implementation of the change. FPCNs are issued at least 90 days prior to ON Semiconductor will consider this change approved unless specific conditions of acceptance are provided in writing within 30 days of receipt of this notice. To do so, contact <[email protected]>. DESCRIPTION AND PURPOSE: ON Semiconductor is pleased to announce the Wafer Fab qualification for the NCP502 and MC78LCxx product families. These device families are currently qualified at ON Semiconductor’s Aizu wafer fab facility located in Aizu, Japan and are now qualified at ON Semiconductor’s Gresham wafer fabrication facility located in Gresham, Oregon. Upon expiration (or approval) of this Final PCN, devices may be supplied by either wafer fab. The Gresham wafer fab is compliant to ISO9001:2008, ISO/TS16949:2009, and ISO14001:2004. The NCP502 and MC78LCxx families run on the Aizu ACMOS1 process. The same ACMOS1 process has been transferred to and successfully qualified at the Gresham wafer fab. No device design changes have been made. Device performance is the same for Aizu and Gresham-sourced devices. The NCP502 and MC78LCxx families will continue to be assembled and tested in existing, qualified locations. No changes to packaging will occur as a result of this fab qualification. No change to the device data sheets will be made. Issue Date: 18-Jan-2012 Rev. 06-Jan-2010 Page 1 of 5 FINAL PRODUCT/PROCESS CHANGE NOTIFICATION #16795 RELIABILITY DATA SUMMARY: Qualification devices consisted of 3 parts that will generically qualify all the devices which utilize the ACMOS1 wafer technology process. All testing was performed per AECQ-100 requirements. NCP551SN30T1G # Test Name Test Conditions End Point Req’s Test Results Read Point (rej/ ss) (rej/ ss) Lot A Lot B done Prep Sample preparation and initial part testing Various --- Initial Electrical done ELFR Early Life Failure Rate TA = 125°C c = 0, 25°C & 125°C 48 hrs 0/800 B1 HTOL High Temp Operating Live Test TA = 125°C ; Tj=140°C c = 0, 25°C & 125°C 504hrs. 0/80 0/79 1008hrs. 0/80 0/79 A1 PC MSL1 Preconditioning 3 IR @ 260 deg C c = 0, 25°C 0/262 0/262 A3 PCUHST Precon. - Unbias HAST TA= +130C, RH = 85%, PSIG= 18.8 c = 0, 25°C 96hrs 0/84 0/84 -65/+150 °C, Air to Air c = 0, 25°C & 125°C 500cyc 1000cyc 0/84 0/84 0/84 0/84 1 A4 PC-TC Precon. - Temp Cycle PCHAST Precond. - HAST TA= +130C, RH = 85%, PSIG= 18.8, bias c = 0, 25°C & 125°C 96 hrs 0/84 0/83 SAT Scanning Acoustic Tomography Compare for Delamination before and after PC Compare to existing data Results Done Done C1 WBS Wire Bond Shear Results Cpk>1.33 C2 WBP Wire Bond Pull Strength, Condition C >3gm Pull Force Results Cpk>1.33 E2 ESD Electro-static Discharge Human Body Model (HBM) c = 0, 25°C & 125°C Results 2kV E2 ESD Electro-static Discharge Machine Model (MM) c = 0, 25°C & 125°C Results 200V E3 ESD Electro-static Discharge Charge device Model (CDM) c = 0, 25°C & 125°C Results 2kV E4 LU Latch-up Class II c = 0, 25°C & 125°C Results LU+>100mA LU->100mA E5 ED Electrical Distribution -40°C, 25°C, 85°C, 125°C NA Results Cpk > 1.67 A4 Cpk>1.33 Table 1: Reliability Evaluation Results for Device NCP551SN30T1G Qualification Points in BOLD Issue Date: 18-Jan-2012 Rev. 06-Jan-2010 Page 2 of 5 FINAL PRODUCT/PROCESS CHANGE NOTIFICATION #16795 NCS2002NS1T1G # Test Name Test Conditions End Point Req’s 1 Prep Sample preparation and initial part testing various --- 2 HTOL High Temp Op Life TA = 145°C for 504 hours c = 0, Room,125C 3 PC MSL1 Preconditioning 4 TC-PC Precond. Temp Cycle 5 HASTPC Precond. HAST Test (rej/ ss) (rej/ ss) Results Read Point Lot A Lot 2 Initial done done Electrical 504 Hrs 0/80 0/80 1008 Hrs 0/80 0/80 500 cyc 1000 cyc 0/84 0/84 0/84 0/84 96 hrs 0/84 0/84 c = 0, Room 96 hrs 0/84 0/84 3 IR @ 260 deg C c = 0, Room -65/+150 C c = 0, Room, 125C TA= +130C, RH = 85%, c = 0, Room,125C PSIG= 18.8, bias 6 AC-PC Precond. Autoclave 121°C/100% RH/15psig 7 SAT Scanning Acoustic Tomography Compare for Delamination before and after PC Compare to existing data Results 0/10 0/10 8 ELFR Early Life Failure Rate Tj = 125°C for 48 hrs c=0,Room, 125C 48Hrs 0/800 NA Issue Date: 18-Jan-2012 Rev. 06-Jan-2010 Page 3 of 5 FINAL PRODUCT/PROCESS CHANGE NOTIFICATION #16795 NCP2860DM277R2G # Test Name Test Conditions End Point Req’s Test Results Read Point (rej/ ss) (rej/ ss) (rej/ ss) Lot A Lot B Lot C (rej/ ss) Lot D Initial Electrical done done done done 504hrs. 0/84 0/84 0/84 0/84 1008hrs. 0/84 0/84 0/84 0/84 0/178 0/178 0/178 0/178 Sample preparation and initial part testing Various --- B1 HTOL High Temp Operating Live Test TA = 125°C ; Tj=132°C c = 0, 25°C A1 MSL1 Preconditioning 3 IR @ 260 deg C c = 0, 25°C PC- Precon. - Unbias TA= +130C, RH = UHST HAST 85%, PSIG= 18.8 c = 0, 25°C 96hrs 0/84 0/84 0/84 0/84 1 A3 Prep PC PCTC Precon. - Temp Cycle -65/+150 °C, Air to Air c = 0, 25°C 500cyc 1000cyc 0/84 0/84 0/84 0/84 0/84 0/84 0/84 0/84 SAT Scanning Acoustic Tomography Compare for Delamination before and after PC Compare to existing data Results done done done done E2 ESD Electro-static Discharge Human Body Model (HBM) c = 0, 25°C Results 4kV 4kV 4kV E2 ESD Electro-static Discharge Machine Model (MM) c = 0, 25°C Results 200V 200V 200V E3 ESD Electro-static Discharge Charge device Model (CDM) c = 0, 25°C Results 2kV 2kV 2kV A4 E4 LU Latch-up Class II c = 0, 25°C & 85°C Results E5 ED Electrical Distribution -40°C, -25°C, 25°C, 85°C, 125°C NA Results LU+>100mA LU+>100mA LU+>100mA LU->100mA LU->100mA LU->100mA Cpk>1.67 Cpk>1.67 Cpk>1.67 ELECTRICAL CHARACTERISTIC SUMMARY: No change to the device data sheets is being made. All parametric performance and limits remain the same CHANGED PART IDENTIFICATION: No change to current part marking will occur. Marking traceability codes will be able to identify wafer fab die source. Issue Date: 18-Jan-2012 Rev. 06-Jan-2010 Page 4 of 5 FINAL PRODUCT/PROCESS CHANGE NOTIFICATION #16795 List of affected General Parts: MC78LC15NTRG MC78LC18NTRG MC78LC25NTRG MC78LC27NTRG MC78LC28NTRG MC78LC30NTRG MC78LC33NTRG MC78LC40NTRG MC78LC50NTRG NCP502SN28T1G NCP502SN29T1G NCP502SN30T1G NCP502SN31T1G NCP502SN33T1G NCP502SN34T1G NCP502SN35T1G NCP502SN36T1G NCP502SN37T1G NCP502SN50T1G NCP502SQ15T2G NCP502SQ18T2G NCP502SQ25T2G NCP502SQ27T2G NCP502SQ28T2G NCP502SQ29T2G NCP502SQ30T2G NCP502SQ31T2G NCP502SQ33T2G NCP502SQ34T2G NCP502SQ35T2G NCP502SQ36T2G NCP502SQ37T2G NCP502SQ50T2G Issue Date: 18-Jan-2012 Rev. 06-Jan-2010 Page 5 of 5