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FINAL PRODUCT/PROCESS CHANGE NOTIFICATION #16795
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Issue Date: 18-Jan-2012
TITLE: NCP502 and MC78LCxx Family Transfer Wafer fab from Aizu to Gresham
PROPOSED FIRST SHIP DATE: 18-Apr-2012
AFFECTED CHANGE CATEGORY(S): Wafer Fab Change
FOR ANY QUESTIONS CONCERNING THIS NOTIFICATION:
Contact your local ON Semiconductor Sales Office or <[email protected]>
SAMPLES: Contact your local ON Semiconductor Sales Office or [email protected]
ADDITIONAL RELIABILITY DATA: Available
Contact your local ON Semiconductor Sales Office or <[email protected]>
NOTIFICATION TYPE:
Final Product/Process Change Notification (FPCN)
Final change notification sent to customers.
implementation of the change.
FPCNs are issued at least 90 days prior to
ON Semiconductor will consider this change approved unless specific conditions of acceptance are
provided in writing within 30 days of receipt of this notice. To do so, contact <[email protected]>.
DESCRIPTION AND PURPOSE:
ON Semiconductor is pleased to announce the Wafer Fab qualification for the NCP502 and
MC78LCxx product families. These device families are currently qualified at ON Semiconductor’s
Aizu wafer fab facility located in Aizu, Japan and are now qualified at ON Semiconductor’s Gresham
wafer fabrication facility located in Gresham, Oregon. Upon expiration (or approval) of this Final
PCN, devices may be supplied by either wafer fab.
The Gresham wafer fab is compliant to ISO9001:2008, ISO/TS16949:2009, and ISO14001:2004.
The NCP502 and MC78LCxx families run on the Aizu ACMOS1 process. The same ACMOS1
process has been transferred to and successfully qualified at the Gresham wafer fab. No device
design changes have been made. Device performance is the same for Aizu and Gresham-sourced
devices.
The NCP502 and MC78LCxx families will continue to be assembled and tested in existing, qualified
locations. No changes to packaging will occur as a result of this fab qualification. No change to the
device data sheets will be made.
Issue Date: 18-Jan-2012
Rev. 06-Jan-2010
Page 1 of 5
FINAL PRODUCT/PROCESS CHANGE NOTIFICATION #16795
RELIABILITY DATA SUMMARY:
Qualification devices consisted of 3 parts that will generically qualify all the devices which utilize the
ACMOS1 wafer technology process. All testing was performed per AECQ-100 requirements.
NCP551SN30T1G
#
Test
Name
Test Conditions
End Point Req’s
Test
Results
Read
Point
(rej/ ss)
(rej/ ss)
Lot A
Lot B
done
Prep
Sample preparation
and initial part testing
Various
---
Initial
Electrical
done
ELFR
Early Life Failure Rate
TA = 125°C
c = 0, 25°C & 125°C
48 hrs
0/800
B1 HTOL
High Temp Operating
Live Test
TA = 125°C ;
Tj=140°C
c = 0, 25°C & 125°C
504hrs.
0/80
0/79
1008hrs.
0/80
0/79
A1
PC
MSL1 Preconditioning
3 IR @ 260 deg C
c = 0, 25°C
0/262
0/262
A3
PCUHST
Precon. - Unbias
HAST
TA= +130C, RH = 85%,
PSIG= 18.8
c = 0, 25°C
96hrs
0/84
0/84
-65/+150 °C, Air to Air
c = 0, 25°C & 125°C
500cyc
1000cyc
0/84
0/84
0/84
0/84
1
A4 PC-TC Precon. - Temp Cycle
PCHAST
Precond. - HAST
TA= +130C, RH = 85%,
PSIG= 18.8, bias
c = 0, 25°C & 125°C
96 hrs
0/84
0/83
SAT
Scanning Acoustic
Tomography
Compare for
Delamination before and
after PC
Compare to existing
data
Results
Done
Done
C1
WBS
Wire Bond Shear
Results
Cpk>1.33
C2
WBP
Wire Bond Pull
Strength, Condition C
>3gm
Pull Force
Results
Cpk>1.33
E2
ESD
Electro-static
Discharge
Human Body Model
(HBM)
c = 0, 25°C & 125°C
Results
2kV
E2
ESD
Electro-static
Discharge
Machine Model (MM)
c = 0, 25°C & 125°C
Results
200V
E3
ESD
Electro-static
Discharge
Charge device Model
(CDM)
c = 0, 25°C & 125°C
Results
2kV
E4
LU
Latch-up
Class II
c = 0, 25°C & 125°C
Results
LU+>100mA
LU->100mA
E5
ED
Electrical Distribution
-40°C, 25°C, 85°C,
125°C
NA
Results
Cpk > 1.67
A4
Cpk>1.33
Table 1: Reliability Evaluation Results for Device NCP551SN30T1G
Qualification Points in BOLD
Issue Date: 18-Jan-2012
Rev. 06-Jan-2010
Page 2 of 5
FINAL PRODUCT/PROCESS CHANGE NOTIFICATION #16795
NCS2002NS1T1G
#
Test
Name
Test Conditions
End Point Req’s
1
Prep
Sample preparation
and initial part testing
various
---
2
HTOL
High Temp Op Life
TA = 145°C for 504
hours
c = 0, Room,125C
3
PC
MSL1
Preconditioning
4 TC-PC Precond. Temp Cycle
5
HASTPC
Precond. HAST
Test
(rej/ ss) (rej/ ss)
Results
Read Point Lot A Lot 2
Initial
done done
Electrical
504 Hrs
0/80
0/80
1008 Hrs
0/80
0/80
500 cyc
1000 cyc
0/84
0/84
0/84
0/84
96 hrs
0/84
0/84
c = 0, Room
96 hrs
0/84
0/84
3 IR @ 260 deg C
c = 0, Room
-65/+150 C
c = 0, Room, 125C
TA= +130C, RH = 85%,
c = 0, Room,125C
PSIG= 18.8, bias
6 AC-PC
Precond. Autoclave 121°C/100% RH/15psig
7
SAT
Scanning Acoustic
Tomography
Compare for
Delamination before
and after PC
Compare to existing
data
Results
0/10
0/10
8
ELFR
Early Life Failure
Rate
Tj = 125°C for 48 hrs
c=0,Room, 125C
48Hrs
0/800
NA
Issue Date: 18-Jan-2012
Rev. 06-Jan-2010
Page 3 of 5
FINAL PRODUCT/PROCESS CHANGE NOTIFICATION #16795
NCP2860DM277R2G
#
Test
Name
Test
Conditions
End Point
Req’s
Test
Results
Read
Point
(rej/ ss)
(rej/ ss)
(rej/ ss)
Lot A
Lot B
Lot C
(rej/
ss)
Lot D
Initial
Electrical
done
done
done
done
504hrs.
0/84
0/84
0/84
0/84
1008hrs.
0/84
0/84
0/84
0/84
0/178
0/178
0/178
0/178
Sample
preparation and
initial part testing
Various
---
B1 HTOL
High Temp
Operating Live
Test
TA = 125°C ;
Tj=132°C
c = 0, 25°C
A1
MSL1
Preconditioning
3 IR @ 260 deg C
c = 0, 25°C
PC- Precon. - Unbias TA= +130C, RH =
UHST
HAST
85%, PSIG= 18.8
c = 0, 25°C
96hrs
0/84
0/84
0/84
0/84
1
A3
Prep
PC
PCTC
Precon. - Temp
Cycle
-65/+150 °C, Air
to Air
c = 0, 25°C
500cyc
1000cyc
0/84
0/84
0/84
0/84
0/84
0/84
0/84
0/84
SAT
Scanning Acoustic
Tomography
Compare for
Delamination
before and after
PC
Compare to
existing data
Results
done
done
done
done
E2 ESD
Electro-static
Discharge
Human Body
Model (HBM)
c = 0, 25°C
Results
4kV
4kV
4kV
E2 ESD
Electro-static
Discharge
Machine Model
(MM)
c = 0, 25°C
Results
200V
200V
200V
E3 ESD
Electro-static
Discharge
Charge device
Model (CDM)
c = 0, 25°C
Results
2kV
2kV
2kV
A4
E4
LU
Latch-up
Class II
c = 0, 25°C &
85°C
Results
E5
ED
Electrical
Distribution
-40°C, -25°C,
25°C, 85°C,
125°C
NA
Results
LU+>100mA LU+>100mA LU+>100mA
LU->100mA LU->100mA LU->100mA
Cpk>1.67
Cpk>1.67
Cpk>1.67
ELECTRICAL CHARACTERISTIC SUMMARY:
No change to the device data sheets is being made. All parametric performance and limits remain
the same
CHANGED PART IDENTIFICATION:
No change to current part marking will occur. Marking traceability codes will be able to identify wafer
fab die source.
Issue Date: 18-Jan-2012
Rev. 06-Jan-2010
Page 4 of 5
FINAL PRODUCT/PROCESS CHANGE NOTIFICATION #16795
List of affected General Parts:
MC78LC15NTRG
MC78LC18NTRG
MC78LC25NTRG
MC78LC27NTRG
MC78LC28NTRG
MC78LC30NTRG
MC78LC33NTRG
MC78LC40NTRG
MC78LC50NTRG
NCP502SN28T1G
NCP502SN29T1G
NCP502SN30T1G
NCP502SN31T1G
NCP502SN33T1G
NCP502SN34T1G
NCP502SN35T1G
NCP502SN36T1G
NCP502SN37T1G
NCP502SN50T1G
NCP502SQ15T2G
NCP502SQ18T2G
NCP502SQ25T2G
NCP502SQ27T2G
NCP502SQ28T2G
NCP502SQ29T2G
NCP502SQ30T2G
NCP502SQ31T2G
NCP502SQ33T2G
NCP502SQ34T2G
NCP502SQ35T2G
NCP502SQ36T2G
NCP502SQ37T2G
NCP502SQ50T2G
Issue Date: 18-Jan-2012
Rev. 06-Jan-2010
Page 5 of 5