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FINAL PRODUCT/PROCESS CHANGE NOTIFICATION #16807
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Issue Date: 9-Feb-2012
TITLE: NCP2860 and NCP571 Family Transfer Wafer fab from Aizu to Gresham
PROPOSED FIRST SHIP DATE: 09-May-2012
AFFECTED CHANGE CATEGORY(S): Wafer Fab Change
FOR ANY QUESTIONS CONCERNING THIS NOTIFICATION:
Contact your local ON Semiconductor Sales Office or <[email protected]>
SAMPLES: Contact your local ON Semiconductor Sales Office or <[email protected]>
ADDITIONAL RELIABILITY DATA: Available
Contact your local ON Semiconductor Sales Office or <[email protected]>
NOTIFICATION TYPE:
Final Product/Process Change Notification (FPCN)
Final change notification sent to customers.
implementation of the change.
FPCNs are issued at least 90 days prior to
ON Semiconductor will consider this change approved unless specific conditions of acceptance are
provided in writing within 30 days of receipt of this notice. To do so, contact <[email protected]>.
DESCRIPTION AND PURPOSE:
ON Semiconductor is pleased to announce the Wafer Fab qualification for the NCP2860 and
NCP571 product families. These device families are currently qualified at ON Semiconductor’s Aizu
wafer fab facility located in Aizu, Japan and are now qualified at ON Semiconductor’s Gresham
wafer fabrication facility located in Gresham, Oregon. Upon expiration (or approval) of this Final
PCN, devices may be supplied by either wafer fab.
The Gresham wafer fab is compliant to ISO9001:2008, ISO/TS16949:2009, and ISO14001:2004.
The NCP2860 and NCP571 families run on the Aizu ACMOS1 process. The same ACMOS1
process has been transferred to and successfully qualified at the Gresham wafer fab. No device
design changes have been made. Device performance is the same for Aizu and Gresham-sourced
devices.
The NCP2860 and NCP571 families will continue to be assembled and tested in existing, qualified
locations. No changes to packaging will occur as a result of this fab qualification. No change to the
device data sheets will be made.
Issue Date: 09-Feb-2012
Rev. 06-Jan-2010
Page 1 of 4
FINAL PRODUCT/PROCESS CHANGE NOTIFICATION #16807
RELIABILITY DATA SUMMARY:
Qualification devices consisted of 3 parts that will generically qualify all the devices which utilize the
ACMOS1 wafer technology process. All testing was performed per AECQ-100 requirements.
NCP551SN30T1G
Test
Name
Prep
Sample preparation
and initial part testing
Various
---
ELFR
Early Life Failure Rate
TA = 125°C
c = 0, 25°C & 125°C
B1 HTOL
High Temp Operating
Live Test
TA = 125°C ;
Tj=140°C
c = 0, 25°C & 125°C
A1
PC
MSL1 Preconditioning
3 IR @ 260 deg C
c = 0, 25°C
A3
PCUHST
Precon. - Unbias
HAST
TA= +130C, RH = 85%,
PSIG= 18.8
c = 0, 25°C
-65/+150 °C, Air to Air
#
1
A4 PC-TC Precon. - Temp Cycle
Test Conditions
Test Results
(rej/ ss)
(rej/ ss)
Read Point
Initial
Electrical
Lot A
Lot B
done
done
48 hrs
0/800
504hrs.
0/80
0/79
1008hrs.
0/80
0/79
0/262
0/262
96hrs
0/84
0/84
c = 0, 25°C & 125°C
500cyc
1000cyc
0/84
0/84
0/84
0/84
End Point Req’s
PCHAST
Precond. - HAST
TA= +130C, RH = 85%,
PSIG= 18.8, bias
c = 0, 25°C & 125°C
96 hrs
0/84
0/83
SAT
Scanning Acoustic
Tomography
Compare for
Delamination before and
after PC
Compare to existing
data
Results
Done
Done
C1
WBS
Wire Bond Shear
Results
Cpk>1.33
C2
WBP
Wire Bond Pull
Strength, Condition C
>3gm
Pull Force
Results
Cpk>1.33
E2
ESD
Electro-static
Discharge
Human Body Model
(HBM)
c = 0, 25°C & 125°C
Results
2kV
E2
ESD
Electro-static
Discharge
Machine Model (MM)
c = 0, 25°C & 125°C
Results
200V
E3
ESD
Electro-static
Discharge
Charge device Model
(CDM)
c = 0, 25°C & 125°C
Results
2kV
E4
LU
Latch-up
Class II
c = 0, 25°C & 125°C
Results
LU+>100mA
LU->100mA
E5
ED
Electrical Distribution
-40°C, 25°C, 85°C,
125°C
NA
Results
Cpk > 1.67
A4
Cpk>1.33
Table 1: Reliability Evaluation Results for Device NCP551SN30T1G
Qualification Points in BOLD
Issue Date: 09-Feb-2012
Rev. 06-Jan-2010
Page 2 of 4
FINAL PRODUCT/PROCESS CHANGE NOTIFICATION #16807
NCS2002NS1T1G
#
Test
Name
1
Prep
2
HTOL
3
PC
End Point Req’s
Test Conditions
Sample preparation
various
and initial part testing
High Temp Op Life TA = 145°C for 504 hours
MSL1 Preconditioning
--c = 0, Room,125C
Test Results (rej/ ss) (rej/ ss)
Read Point
Initial
Electrical
504 Hrs
Lot A
done
Lot 2
done
0/80
0/80
1008 Hrs
0/80
0/80
3 IR @ 260 deg C
c = 0, Room
-65/+150 C
c = 0, Room, 125C
500 cyc
1000 cyc
0/84
0/84
0/84
0/84
4
TC-PC Precond. Temp Cycle
5
HASTPC
Precond. HAST
TA= +130C, RH = 85%,
PSIG= 18.8, bias
c = 0, Room,125C
96 hrs
0/84
0/84
6
AC-PC
Precond. Autoclave
121°C/100% RH/15psig
c = 0, Room
96 hrs
0/84
0/84
7
SAT
Scanning Acoustic
Tomography
Compare for
Delamination before and
after PC
Compare to existing
data
Results
0/10
0/10
8
ELFR
Early Life Failure Rate
Tj = 125°C for 48 hrs
c=0,Room, 125C
48Hrs
0/800
NA
NCP2860DM277R2G
#
Test
Name
End Point Req’s
Test Conditions
Test
Results
Read
Point
(rej/ ss)
(rej/ ss)
(rej/ ss)
(rej/ ss)
Lot A
Lot B
Lot C
Lot D
Initial
Electrical
done
done
done
done
504hrs.
0/84
0/84
0/84
0/84
1008hrs.
0/84
0/84
0/84
0/84
0/178
0/178
0/178
0/178
Sample
preparation and
initial part testing
Various
---
B1 HTOL
High Temp
Operating Live
Test
TA = 125°C ;
Tj=132°C
c = 0, 25°C
A1
MSL1
Preconditioning
3 IR @ 260 deg C
c = 0, 25°C
PC- Precon. - Unbias
UHST
HAST
TA= +130C, RH =
85%, PSIG= 18.8
c = 0, 25°C
96hrs
0/84
0/84
0/84
0/84
-65/+150 °C, Air to
Air
c = 0, 25°C
500cyc
1000cyc
0/84
0/84
0/84
0/84
0/84
0/84
0/84
0/84
Compare to
existing data
Results
done
done
done
done
1
A3
A4
Prep
PC
PCTC
SAT
Precon. - Temp
Cycle
Compare for
Scanning Acoustic
Delamination before
Tomography
and after PC
E2 ESD
Electro-static
Discharge
Human Body Model
(HBM)
c = 0, 25°C
Results
4kV
4kV
4kV
E2 ESD
Electro-static
Discharge
Machine Model
(MM)
c = 0, 25°C
Results
200V
200V
200V
E3 ESD
Electro-static
Discharge
Charge device
Model (CDM)
c = 0, 25°C
Results
2kV
2kV
2kV
E4
LU
Latch-up
Class II
c = 0, 25°C &
85°C
Results
E5
ED
Electrical
Distribution
-40°C, -25°C, 25°C,
85°C, 125°C
NA
Results
Issue Date: 09-Feb-2012
Rev. 06-Jan-2010
LU+>100mA LU+>100mA LU+>100mA
LU->100mA LU->100mA LU->100mA
Cpk>1.67
Cpk>1.67
Cpk>1.67
Page 3 of 4
FINAL PRODUCT/PROCESS CHANGE NOTIFICATION #16807
ELECTRICAL CHARACTERISTIC SUMMARY:
No change to the device data sheets is being made. All parametric performance and limits remain
the same
CHANGED PART IDENTIFICATION:
No change to current part marking will occur. Marking traceability codes will be able to identify wafer
fab die source.
List of affected General Parts:
NCP2860DM277R2G
NCP2860DMADJR2G
NCP571MN08TBG
NCP571MN09TBG
NCP571MN10TBG
NCP571MN12TBG
NCP571SN08T1G
NCP571SN09T1G
NCP571SN10T1G
NCP571SN12T1G
NCV571MN08TBG
NCV571MN09TBG
NCV571MN10TBG
NCV571MN12TBG
NCV571SN08T1G
NCV571SN09T1G
NCV571SN10T1G
NCV571SN12T1G
Issue Date: 09-Feb-2012
Rev. 06-Jan-2010
Page 4 of 4