Power Transistors 2SB1574 (Tentative) Silicon PNP epitaxial planar type Unit: mm 6.5±0.1 5.3±0.1 4.35±0.1 For low-frequency output amplification 2.3±0.1 ● ● 1.0±0.1 0.1±0.05 0.8max 0.93±0.1 2.3±0.1 4.6±0.1 1 (TC=25˚C) Symbol Ratings Unit Collector to base voltage VCBO –50 V Collector to emitter voltage VCEO –50 V Emitter to base voltage VEBO –5 V Peak collector current ICP –3 A Collector current IC –2 A Collector power dissipation (TC=25°C) PC 10 W Junction temperature Tj 150 ˚C Storage temperature Tstg –55 to +150 Parameter Unit: mm 6.5±0.2 5.35 4.35 0.75 2.3 2.3 0.6 0.5±0.1 ˚C 1 ■ Electrical Characteristics 3 1.8 Parameter 2 1:Base 2:Collector 3:Emitter U Type Package 6.0 ■ Absolute Maximum Ratings 0.5±0.1 0.75±0.1 5.5±0.2 13.3±0.3 ● Possible to solder radiation fin directly to printed cicuit boad Type with universal characteristics Collector breakdown voltage: VCBO/VCEO = –50V Collector current: IC = –2A 2 3 2.3±0.1 ● 2.5±0.1 ■ Features 1.0±0.2 1.8±0.1 7.3±0.1 0.5±0.1 1:Base 2:Collector 3:Emitter EIAJ:SC–63 U Type Package (Z) (TC=25˚C) Symbol Conditions min typ max Unit µA ICBO Collector to base voltage VCBO IC = –10µA, IE = 0 –50 V Collector to emitter voltage VCEO IC = –1mA, IB = 0 –50 V Emitter to base voltage VEBO IE = –10µA, IC = 0 –5 hFE1* VCE = –2V, IC = –200mA 120 60 Forward current transfer ratio VCB = –10V, IE = 0 – 0.1 Collector cutoff current V 340 hFE2 VCE = –2V, IC = –1A Collector to emitter saturation voltage VCE(sat) IC = –1A, IB = –50mA – 0.2 – 0.3 Base to emitter saturation voltage VBE(sat) IC = –1A, IB = –50mA – 0.85 –1.2 Transition frequency fT VCB = –10V, IE = 50mA, f = 200MHz 80 Collector output capacitance Cob VCB = –10V, IE = 0, f = 1MHz 45 *h FE1 V V MHz 60 pF Rank classification Rank R S hFE1 120 to 240 170 to 340 1 Request for your special attention and precautions in using the technical information and semiconductors described in this material (1) An export permit needs to be obtained from the competent authorities of the Japanese Government if any of the products or technologies described in this material and controlled under the "Foreign Exchange and Foreign Trade Law" is to be exported or taken out of Japan. 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