Transistor 2SA1309A Silicon PNP epitaxial planer type For low-frequency amplification Complementary to 2SC3311A Unit: mm 3.0±0.2 4.0±0.2 ■ Features marking (Ta=25˚C) Parameter Symbol Ratings Unit Collector to base voltage VCBO –60 V Collector to emitter voltage VCEO –50 V Emitter to base voltage VEBO –7 V Peak collector current ICP –200 mA Collector current IC –100 mA Collector power dissipation PC 300 mW Junction temperature Tj 150 ˚C Storage temperature Tstg –55 ~ +150 ˚C ■ Electrical Characteristics 2 3 1.27 1.27 2.54±0.15 1:Emitter 2:Collector 3:Base EIAJ:SC–72 New S Type Package (Ta=25˚C) Parameter Symbol ICBO Collector cutoff current 1 2.0±0.2 ■ Absolute Maximum Ratings 15.6±0.5 ● High foward current transfer ratio hFE. Allowing supply with the radial taping. Optimum for high-density mounting. 0.7±0.1 ● +0.2 0.45–0.1 ● Conditions min typ VCB = –10V, IE = 0 max Unit –100 nA –1 µA ICEO VCE = –10V, IB = 0 Collector to base voltage VCBO IC = –10µA, IE = 0 –60 V Collector to emitter voltage VCEO IC = –2mA, IB = 0 –50 V Emitter to base voltage VEBO IE = –10µA, IC = 0 –7 V Forward current transfer ratio hFE * VCE = –10V, IC = –2mA 160 Collector to emitter saturation voltage VCE(sat) IC = –50mA, IB = –5mA Transition frequency fT VCB = –10V, IE = 1mA, f = 200MHz 80 MHz Collector output capacitance Cob VCB = –10V, IE = 0, f = 1MHz 3.5 pF *h FE 460 – 0.3 V Rank classification Rank Q R S hFE 160 ~ 260 210 ~ 340 290 ~ 460 1 2SA1309A Transistor PC — Ta IC — VCE –240 350 300 250 200 150 –200 80 –160 IB=–300µA 60 –250µA –200µA 40 –150µA –100µA 25˚C Ta=75˚C –25˚C –120 20 –80 –40 –50µA 100 0 40 60 80 100 120 140 160 0 0 –2 Ta=75˚C 25˚C –25˚C – 0.03 – 0.01 – 0.003 –10 –30 –100 –300 –1000 Collector current IC (mA) Cob — VCB IE=0 f=1MHz Ta=25˚C 8 7 6 5 4 3 2 1 0 –1 –3 –10 0 – 0.4 –30 –100 Collector to base voltage VCB (V) –1.2 –1.6 –2.0 160 500 400 Ta=75˚C 300 – 0.8 Base to emitter voltage VBE (V) fT — IE 25˚C –25˚C 200 100 VCB=–10V Ta=25˚C 140 120 100 80 60 40 20 0 –1 –3 –10 –30 –100 –300 –1000 Collector current IC (mA) 10 9 –12 VCE=–5V Forward current transfer ratio hFE –1 –3 –10 600 IC/IB=10 –3 – 0.001 –1 –8 hFE — IC –10 – 0.1 –6 Collector to emitter voltage VCE (V) VCE(sat) — IC – 0.3 –4 Transition frequency fT (MHz) 20 Ambient temperature Ta (˚C) Collector to emitter saturation voltage VCE(sat) (V) Collector current IC (mA) 100 400 0 Collector output capacitance Cob (pF) VCE=–5V Ta=25˚C 450 50 2 IC — VBE 120 Collector current IC (mA) Collector power dissipation PC (mW) 500 0 – 0.1 – 0.3 –1 –3 –10 –30 Emitter current IE (mA) –100 Request for your special attention and precautions in using the technical information and semiconductors described in this material (1) An export permit needs to be obtained from the competent authorities of the Japanese Government if any of the products or technologies described in this material and controlled under the "Foreign Exchange and Foreign Trade Law" is to be exported or taken out of Japan. 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