Transistors 2SA2009 Silicon PNP epitaxial planer type For low-frequency high breakdown voltage amplification (0.425) Unit: mm 0.3+0.1 –0.0 0.15+0.10 –0.05 2.1±0.1 5˚ 1.25±0.10 0.9+0.2 –0.1 • High collector to emitter voltage VCEO • Low noise voltage NV 0.9±0.1 3 ■ Features 2 0.2±0.1 1 (0.65) (0.65) ■ Absolute Maximum Ratings Ta = 25°C 2.0±0.2 Symbol Rating Unit VCBO −120 V Collector to emitter voltage VCEO −120 V Emitter to base voltage VEBO −5 V Peak collector current ICP −50 mA Collector current IC −20 mA Collector power dissipation PC 150 mW Junction temperature Tj 150 °C Storage temperature Tstg −55 to +150 °C Collector to base voltage 10˚ 0 to 0.1 Parameter 1.3±0.1 1: Base 2: Emitter 3: Collector EIAJ: SC-70 S Mini Type Package (3-pin) Marking Symbol: AR ■ Electrical Characteristics Ta = 25°C ± 3°C Parameter Symbol Conditions Min Typ Max Unit −100 nA −1 µA Collector cutoff current ICBO VCB = −50 V, IE = 0 ICEO VCE = −50 V, IB = 0 Collector to base voltage VCBO IC = −10 µA, IE = 0 −120 V Collector to emitter voltage VCEO IC = −1 mA, IB = 0 −120 V Emitter to base voltage VEBO IE = −10 µA, IC = 0 −5 V hFE VCE = −5 V, IC = −2 mA 180 VCE(sat) IC = −20 mA, IB = −2 mA Forward current transfer ratio * Collector to emitter saturation voltage Noise voltage Transition frequency 700 − 0.6 V NV VCE = −40 V, IC = −1 mA, GV = 80 dB Rg = 100 kW, Function = FLAT 130 mV fT VCB = −5 V, IE = 2 mA, f = 200 MHz 120 MHz Note) *: Rank classification Rank R S T hFE 180 to 360 260 to 520 360 to 700 1 Request for your special attention and precautions in using the technical information and semiconductors described in this material (1) An export permit needs to be obtained from the competent authorities of the Japanese Government if any of the products or technologies described in this material and controlled under the "Foreign Exchange and Foreign Trade Law" is to be exported or taken out of Japan. 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