Transistors 2SB1678 Silicon PNP epitaxial planer type Unit: mm For low-frequency amplification 4.5±0.1 1.6±0.2 Symbol Rating 3.0±0.15 −30 V Collector to emitter voltage VCEO −20 V Emitter to base voltage VEBO −7 V Peak collector current ICP −5 A Collector current IC −3 A PC 1 W Junction temperature Tj 150 °C Storage temperature Tstg −55 to +150 °C Collector power dissipation * 45˚ Unit VCBO Collector to base voltage 2.6±0.1 3˚ 0.4±0.04 0.4 max. 1.5±0.1 ■ Absolute Maximum Ratings Ta = 25°C Parameter 1 2 0.5±0.08 3˚ 3 0.4±0.08 1.0+0.1 –0.2 • Low collector to emitter saturation voltage VCE(sat) • Large Peak collector current ICP • Mini power type package, allowing downsizing and thinning of the equipment and automatic insertion through the tape packing 4.0+0.25 –0.20 ■ Features 2.5±0.1 1.5±0.1 1: Emitter 2: Collector 3: Base MiniP3 Type Package Marking Symbol: 2K Note) *: Printed circuit board copper foil for collector portion area: 1.0 Cm2 or more, thickness: 1.7 mm Absolute maximum rating P C Without heat sink shall be 0.5 W ■ Electrical Characteristics Ta = 25°C ± 3°C Parameter Symbol Conditions Min Typ Max Unit Collector cutoff current ICBO VCB = −10 V, IE = 0 −100 nA Emitter cutoff current IEBO VEB = −5 V, IC = 0 −100 nA Collector to emitter voltage VCEO IC = −1 mA, IB = 0 −20 V Emitter to base voltage VEBO IE = −10 µA, IC = 0 −7 V VCE = −2 V, IC = 200 mA 90 Forward current transfer ratio *1, 2 hFE Collector to emitter saturation voltage *1 VCE(sat) Collector output capacitance −1 VCB = −20 V, IE = 0, f = 1 MHz Cob Transition frequency 625 IC = −3 A, IB = − 0.1 A VCB = −6 V, IE = 50 mA, f = 200 MHz fT 85 120 V pF MHz Note) *1: Pulse measurement *2: Rank classification Rank P Q R hFE 90 to 135 120 to 205 180 to 625 1 Request for your special attention and precautions in using the technical information and semiconductors described in this material (1) An export permit needs to be obtained from the competent authorities of the Japanese Government if any of the products or technologies described in this material and controlled under the "Foreign Exchange and Foreign Trade Law" is to be exported or taken out of Japan. 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