BAL74 High-speed diode

DISCRETE SEMICONDUCTORS
DATA SHEET
BAL74
High-speed diode
Product data sheet
Supersedes data of 1999 May 26
2003 Dec 17
NXP Semiconductors
Product data sheet
High-speed diode
BAL74
FEATURES
PINNING
• Small plastic SMD package
PIN
DESCRIPTION
• High switching speed: max. 4 ns
1
not connected
• Continuous reverse voltage: max. 50 V
2
anode
• Repetitive peak reverse voltage: max. 50 V
3
cathode
• Repetitive peak forward current: max. 500 mA.
APPLICATIONS
• High-speed switching in e.g. surface mounted circuits.
handbook, halfpage
2
1
1
n.c.
2
DESCRIPTION
The BAL74 is a high-speed switching diode fabricated in
planar technology, and encapsulated in the small SOT23
plastic SMD package.
3
3
MAM230
MARKING
TYPE NUMBER
MARKING CODE(1)
BAL74
JC*
Fig.1
Simplified outline (SOT23) and symbol.
Note
1. ∗ = p : Made in Hong Kong.
∗ = t : Made in Malaysia.
∗ = W : Made in China.
ORDERING INFORMATION
PACKAGE
TYPE NUMBER
NAME
BAL74
2003 Dec 17
−
DESCRIPTION
plastic surface mounted package; 3 leads
2
VERSION
SOT23
NXP Semiconductors
Product data sheet
High-speed diode
BAL74
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX. UNIT
VRRM
repetitive peak reverse voltage
−
50
V
VR
continuous reverse voltage
−
50
V
IF
continuous forward current
−
215
mA
IFRM
repetitive peak forward current
−
500
mA
IFSM
non-repetitive peak forward current
tp = 1 µs
−
4
A
tp = 1 ms
−
1
A
tp = 1 s
−
0.5
A
−
250
mW
see Fig.2; note 1
square wave; Tj = 25 °C prior to surge;
see Fig.4
Tamb = 25 °C; note 1
Ptot
total power dissipation
Tstg
storage temperature
−65
+150
°C
Tj
junction temperature
−
150
°C
Note
1. Device mounted on an FR4 printed-circuit board.
ELECTRICAL CHARACTERISTICS
Tj = 25 °C unless otherwise specified.
SYMBOL
VF
IR
PARAMETER
forward voltage
reverse current
CONDITIONS
MAX. UNIT
see Fig.3
IF = 1 mA
715
mV
IF = 10 mA
855
mV
IF = 50 mA
1
V
IF = 150 mA
1.25
V
VR = 50 V
0.1
µA
VR = 50 V; Tj = 150 °C
100
µA
see Fig.5
Cd
diode capacitance
f = 1 MHz; VR = 0; see Fig.6
2
pF
trr
reverse recovery time
when switched from IF = 10 mA to IR = 10 mA;
RL = 100 Ω; measured at IR = 1 mA; see Fig.7
4
ns
Vfr
forward recovery voltage
when switched from IF = 10 mA; tr = 20 ns; see Fig.8 1.75
V
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth(j-tp)
thermal resistance from junction to tie-point
Rth(j-a)
thermal resistance from junction to ambient
CONDITIONS
note 1
Note
1. Device mounted on an FR4 printed-circuit board.
2003 Dec 17
3
VALUE
UNIT
330
K/W
500
K/W
NXP Semiconductors
Product data sheet
High-speed diode
BAL74
GRAPHICAL DATA
msa562
250
MBG382
300
handbook, halfpage
IF
(mA)
IF
(mA)
200
(1)
(2)
(3)
200
150
100
100
50
0
0
50
100
0
150
200
Tamb (°C)
0
1
Device mounted on an FR4 printed-circuit board.
(1) Tj = 150 °C; typical values.
(2) Tj = 25 °C; typical values.
(3) Tj = 25 °C; maximum values.
Fig.2
Fig.3
Maximum permissible continuous forward
current as a function of ambient temperature.
2
VF (V)
Forward current as a function of forward
voltage.
MBG704
102
handbook, full pagewidth
IFSM
(A)
10
1
10−1
1
10
102
103
tp (µs)
Based on square wave currents; Tj = 25 °C prior to surge.
Fig.4 Maximum permissible non-repetitive peak forward current as a function of pulse duration.
2003 Dec 17
4
104
NXP Semiconductors
Product data sheet
High-speed diode
BAL74
mbg377
105
Cd
(pF)
IR
(nA)
(1)
(2)
104
0.6
103
0.4
102
0.2
10
MBG446
0.8
handbook, halfpage
0
0
100
Tj (°C)
0
200
4
(1) VR = 50 V; maximum values.
(2) VR = 50 V; typical values.
f = 1 MHz; Tj = 25 °C.
Fig.5
Fig.6
Reverse current as a function of junction
temperature.
2003 Dec 17
5
8
12
VR (V)
16
Diode capacitance as a function of reverse
voltage; typical values.
NXP Semiconductors
Product data sheet
High-speed diode
BAL74
handbook, full pagewidth
tr
tp
t
D.U.T.
10%
IF
RS = 50 Ω
IF
SAMPLING
OSCILLOSCOPE
t rr
t
R i = 50 Ω
V = VR I F x R S
MGA881
(1)
90%
VR
input signal
output signal
(1) IR = 1 mA.
Fig.7 Reverse recovery time test circuit and waveforms.
I
1 kΩ
450 Ω
V
I
90%
R = 50 Ω
S
D.U.T.
OSCILLOSCOPE
V fr
R i = 50 Ω
10%
MGA882
t
tr
input
signal
Fig.8 Forward recovery voltage test circuit and waveforms.
2003 Dec 17
6
t
tp
output
signal
NXP Semiconductors
Product data sheet
High-speed diode
BAL74
PACKAGE OUTLINE
Plastic surface-mounted package; 3 leads
SOT23
D
E
B
A
X
HE
v M A
3
Q
A
A1
1
2
e1
bp
c
w M B
Lp
e
detail X
0
1
2 mm
scale
DIMENSIONS (mm are the original dimensions)
UNIT
A
A1
max.
bp
c
D
E
e
e1
HE
Lp
Q
v
w
mm
1.1
0.9
0.1
0.48
0.38
0.15
0.09
3.0
2.8
1.4
1.2
1.9
0.95
2.5
2.1
0.45
0.15
0.55
0.45
0.2
0.1
OUTLINE
VERSION
SOT23
2003 Dec 17
REFERENCES
IEC
JEDEC
JEITA
EUROPEAN
PROJECTION
ISSUE DATE
04-11-04
06-03-16
TO-236AB
7
NXP Semiconductors
Product data sheet
High-speed diode
BAL74
DATA SHEET STATUS
DOCUMENT
STATUS(1)
PRODUCT
STATUS(2)
DEFINITION
Objective data sheet
Development
This document contains data from the objective specification for product
development.
Preliminary data sheet
Qualification
This document contains data from the preliminary specification.
Product data sheet
Production
This document contains the product specification.
Notes
1. Please consult the most recently issued document before initiating or completing a design.
2. The product status of device(s) described in this document may have changed since this document was published
and may differ in case of multiple devices. The latest product status information is available on the Internet at
URL http://www.nxp.com.
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above those given in the Characteristics sections of this
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Quick reference data ⎯ The Quick reference data is an
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Applications ⎯ Applications that are described herein for
any of these products are for illustrative purposes only.
NXP Semiconductors makes no representation or
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specified use without further testing or modification.
Limiting values ⎯ Stress above one or more limiting
values (as defined in the Absolute Maximum Ratings
System of IEC 60134) may cause permanent damage to
the device. Limiting values are stress ratings only and
operation of the device at these or any other conditions
2003 Dec 17
8
NXP Semiconductors
Customer notification
This data sheet was changed to reflect the new company name NXP Semiconductors, including new legal
definitions and disclaimers. No changes were made to the technical content, except for package outline
drawings which were updated to the latest version.
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Printed in The Netherlands
R76/04/pp9
Date of release: 2003 Dec 17
Document order number: 9397 750 12388