PMBD6100 High-speed double diode

DISCRETE SEMICONDUCTORS
DATA SHEET
dbook, halfpage
M3D088
PMBD6100
High-speed double diode
Product data sheet
Supersedes data of 1999 May 11
2003 Mar 25
NXP Semiconductors
Product data sheet
High-speed double diode
PMBD6100
PINNING
FEATURES
DESCRIPTION
• Small plastic SMD package
The PMBD6100 consists of two
high-speed switching diodes with
common cathodes, fabricated in
planar technology, and encapsulated
in the small SOT23 plastic SMD
package.
• High switching speed: max. 4 ns
• General application
• Continuous reverse voltage:
max. 70 V
PIN
DESCRIPTION
1
anode (a1)
2
anode (a2)
3
common cathode
• Repetitive peak reverse voltage:
max. 85 V
• Repetitive peak forward current:
max. 450 mA.
APPLICATIONS
2
handbook, 4 columns
1
• High-speed switching in surface
mounted circuits.
2
1
MARKING
3
TYPE NUMBER
PMBD6100
MARKING
CODE(1)
3
MAM108
Top view
∗5B
Note
1. ∗ = p : Made in Hong Kong.
∗ = t : Made in Malaysia.
∗ = W : Made in China.
Fig.1 Simplified outline (SOT23) and symbol.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
Per diode
VRRM
repetitive peak reverse voltage
−
85
V
VR
continuous reverse voltage
−
70
V
IF
continuous forward current
single diode loaded; note 1;
see Fig.2
−
215
mA
double diode loaded; note 1;
see Fig.2
−
125
mA
2003 Mar 25
2
NXP Semiconductors
Product data sheet
High-speed double diode
SYMBOL
PMBD6100
PARAMETER
IFRM
repetitive peak forward current
IFSM
non-repetitive peak forward current
CONDITIONS
MIN.
MAX.
UNIT
−
450
mA
t = 1 µs
−
4
A
t = 1 ms
−
1
A
t=1s
−
0.5
A
−
250
mW
square wave; Tj = 25 °C prior to
surge; see Fig.4
Tamb = 25 °C; note 1
Ptot
total power dissipation
Tstg
storage temperature
−65
+150
°C
Tj
junction temperature
−
150
°C
Note
1. Device mounted on an FR4 printed-circuit board.
ELECTRICAL CHARACTERISTICS
Tj = 25 °C unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
Per diode
VF
IR
forward voltage
see Fig.3
reverse current
IF = 1 mA
550
700
mV
IF = 10 mA
−
855
mV
IF = 50 mA
−
1
V
IF = 100 mA
0.85
1.1
V
VR = 50 V
−
100
nA
VR = 50 V; Tj = 150 °C
−
50
µA
see Fig.5
Cd
diode capacitance
f = 1 MHz; VR = 0; see Fig.6
−
1.5
pF
trr
reverse recovery time
when switched from IF = 10 mA to
IR = 10 mA; RL = 100 Ω; measured
at IR = 1 mA; see Fig.7
−
4
ns
Vfr
forward recovery voltage
when switched from IF = 10 mA;
tr = 20 ns; see Fig.8
−
1.75
V
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-tp
thermal resistance from junction to tie-point
Rth j-a
thermal resistance from junction to ambient
CONDITIONS
note 1
Note
1. Device mounted on an FR4 printed-circuit board.
2003 Mar 25
3
VALUE
UNIT
360
K/W
500
K/W
NXP Semiconductors
Product data sheet
High-speed double diode
PMBD6100
GRAPHICAL DATA
MBD033
300
MBG382
300
handbook, halfpage
IF
(mA)
IF
(mA)
(1)
200
(2)
(3)
200
single diode loaded
double diode loaded
100
100
0
0
0
100
T amb ( oC)
200
1
2
VF (V)
(1) Tj = 150 °C; typical values.
(2) Tj = 25 °C; typical values.
(3) Tj = 25 °C; maximum values.
Device mounted on an FR4 printed-circuit board.
Fig.2
0
Maximum permissible continuous forward
current as a function of ambient
temperature.
Fig.3
Forward current as a function of forward
voltage.
MBG704
102
handbook, full pagewidth
IFSM
(A)
10
1
10−1
1
10
102
103
tp (µs)
Based on square wave currents.
Tj = 25 °C prior to surge.
Fig.4 Maximum permissible non-repetitive peak forward current as a function of pulse duration.
2003 Mar 25
4
104
NXP Semiconductors
Product data sheet
High-speed double diode
PMBD6100
MBG379
2
10halfpage
handbook,
Cd
(pF)
IR
(µA)
0.6
10
(1)
1
10
MBG446
0.8
handbook, halfpage
(2)
(3)
0.4
1
0.2
10 2
0
100
Tj (oC)
0
0
200
(1) VR = 50 V; maximum values.
(2) VR = 50 V; typical values.
(3) VR = 30 V; typical values.
f = 1 MHz; Tj = 25 °C.
Fig.5
Fig.6
Reverse current as a function of junction
temperature.
2003 Mar 25
5
4
8
12
VR (V)
16
Diode capacitance as a function of reverse
voltage; typical values.
NXP Semiconductors
Product data sheet
High-speed double diode
PMBD6100
handbook, full pagewidth
tr
tp
t
D.U.T.
IF
RS = 50 Ω
10%
IF
SAMPLING
OSCILLOSCOPE
t rr
t
R i = 50 Ω
V = VR I F x R S
MGA881
(1)
90%
VR
input signal
output signal
(1) IR = 1 mA.
Fig.7 Reverse recovery voltage test circuit and waveforms.
I
1 kΩ
450 Ω
V
I
90%
R S = 50 Ω
D.U.T.
OSCILLOSCOPE
V fr
R i = 50 Ω
10%
MGA882
t
tr
input
signal
Fig.8 Forward recovery voltage test circuit and waveforms.
2003 Mar 25
6
t
tp
output
signal
NXP Semiconductors
Product data sheet
High-speed double diode
PMBD6100
PACKAGE OUTLINE
Plastic surface mounted package; 3 leads
SOT23
D
E
B
A
X
HE
v M A
3
Q
A
A1
1
2
e1
bp
c
w M B
Lp
e
detail X
0
1
2 mm
scale
DIMENSIONS (mm are the original dimensions)
UNIT
A
A1
max.
bp
c
D
E
e
e1
HE
Lp
Q
v
w
mm
1.1
0.9
0.1
0.48
0.38
0.15
0.09
3.0
2.8
1.4
1.2
1.9
0.95
2.5
2.1
0.45
0.15
0.55
0.45
0.2
0.1
OUTLINE
VERSION
SOT23
2003 Mar 25
REFERENCES
IEC
JEDEC
EIAJ
EUROPEAN
PROJECTION
ISSUE DATE
97-02-28
99-09-13
TO-236AB
7
NXP Semiconductors
Product data sheet
High-speed double diode
PMBD6100
DATA SHEET STATUS
DOCUMENT
STATUS(1)
PRODUCT
STATUS(2)
DEFINITION
Objective data sheet
Development
This document contains data from the objective specification for product
development.
Preliminary data sheet
Qualification
This document contains data from the preliminary specification.
Product data sheet
Production
This document contains the product specification.
Notes
1. Please consult the most recently issued document before initiating or completing a design.
2. The product status of device(s) described in this document may have changed since this document was published
and may differ in case of multiple devices. The latest product status information is available on the Internet at
URL http://www.nxp.com.
Limiting values ⎯ Stress above one or more limiting
values (as defined in the Absolute Maximum Ratings
System of IEC 60134) may cause permanent damage to
the device. Limiting values are stress ratings only and
operation of the device at these or any other conditions
above those given in the Characteristics sections of this
document is not implied. Exposure to limiting values for
extended periods may affect device reliability.
DISCLAIMERS
General ⎯ Information in this document is believed to be
accurate and reliable. However, NXP Semiconductors
does not give any representations or warranties,
expressed or implied, as to the accuracy or completeness
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consequences of use of such information.
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reserves the right to make changes to information
published in this document, including without limitation
specifications and product descriptions, at any time and
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Applications ⎯ Applications that are described herein for
any of these products are for illustrative purposes only.
NXP Semiconductors makes no representation or
warranty that such applications will be suitable for the
specified use without further testing or modification.
2003 Mar 25
Quick reference data ⎯ The Quick reference data is an
extract of the product data given in the Limiting values and
Characteristics sections of this document, and as such is
not complete, exhaustive or legally binding.
8
NXP Semiconductors
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Printed in The Netherlands
613514/04/pp9
Date of release: 2003 Mar 25
Document order number: 9397 750 10967