DISCRETE SEMICONDUCTORS DATA SHEET dbook, halfpage M3D088 PMBD6100 High-speed double diode Product data sheet Supersedes data of 1999 May 11 2003 Mar 25 NXP Semiconductors Product data sheet High-speed double diode PMBD6100 PINNING FEATURES DESCRIPTION • Small plastic SMD package The PMBD6100 consists of two high-speed switching diodes with common cathodes, fabricated in planar technology, and encapsulated in the small SOT23 plastic SMD package. • High switching speed: max. 4 ns • General application • Continuous reverse voltage: max. 70 V PIN DESCRIPTION 1 anode (a1) 2 anode (a2) 3 common cathode • Repetitive peak reverse voltage: max. 85 V • Repetitive peak forward current: max. 450 mA. APPLICATIONS 2 handbook, 4 columns 1 • High-speed switching in surface mounted circuits. 2 1 MARKING 3 TYPE NUMBER PMBD6100 MARKING CODE(1) 3 MAM108 Top view ∗5B Note 1. ∗ = p : Made in Hong Kong. ∗ = t : Made in Malaysia. ∗ = W : Made in China. Fig.1 Simplified outline (SOT23) and symbol. LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 60134). SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT Per diode VRRM repetitive peak reverse voltage − 85 V VR continuous reverse voltage − 70 V IF continuous forward current single diode loaded; note 1; see Fig.2 − 215 mA double diode loaded; note 1; see Fig.2 − 125 mA 2003 Mar 25 2 NXP Semiconductors Product data sheet High-speed double diode SYMBOL PMBD6100 PARAMETER IFRM repetitive peak forward current IFSM non-repetitive peak forward current CONDITIONS MIN. MAX. UNIT − 450 mA t = 1 µs − 4 A t = 1 ms − 1 A t=1s − 0.5 A − 250 mW square wave; Tj = 25 °C prior to surge; see Fig.4 Tamb = 25 °C; note 1 Ptot total power dissipation Tstg storage temperature −65 +150 °C Tj junction temperature − 150 °C Note 1. Device mounted on an FR4 printed-circuit board. ELECTRICAL CHARACTERISTICS Tj = 25 °C unless otherwise specified. SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT Per diode VF IR forward voltage see Fig.3 reverse current IF = 1 mA 550 700 mV IF = 10 mA − 855 mV IF = 50 mA − 1 V IF = 100 mA 0.85 1.1 V VR = 50 V − 100 nA VR = 50 V; Tj = 150 °C − 50 µA see Fig.5 Cd diode capacitance f = 1 MHz; VR = 0; see Fig.6 − 1.5 pF trr reverse recovery time when switched from IF = 10 mA to IR = 10 mA; RL = 100 Ω; measured at IR = 1 mA; see Fig.7 − 4 ns Vfr forward recovery voltage when switched from IF = 10 mA; tr = 20 ns; see Fig.8 − 1.75 V THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-tp thermal resistance from junction to tie-point Rth j-a thermal resistance from junction to ambient CONDITIONS note 1 Note 1. Device mounted on an FR4 printed-circuit board. 2003 Mar 25 3 VALUE UNIT 360 K/W 500 K/W NXP Semiconductors Product data sheet High-speed double diode PMBD6100 GRAPHICAL DATA MBD033 300 MBG382 300 handbook, halfpage IF (mA) IF (mA) (1) 200 (2) (3) 200 single diode loaded double diode loaded 100 100 0 0 0 100 T amb ( oC) 200 1 2 VF (V) (1) Tj = 150 °C; typical values. (2) Tj = 25 °C; typical values. (3) Tj = 25 °C; maximum values. Device mounted on an FR4 printed-circuit board. Fig.2 0 Maximum permissible continuous forward current as a function of ambient temperature. Fig.3 Forward current as a function of forward voltage. MBG704 102 handbook, full pagewidth IFSM (A) 10 1 10−1 1 10 102 103 tp (µs) Based on square wave currents. Tj = 25 °C prior to surge. Fig.4 Maximum permissible non-repetitive peak forward current as a function of pulse duration. 2003 Mar 25 4 104 NXP Semiconductors Product data sheet High-speed double diode PMBD6100 MBG379 2 10halfpage handbook, Cd (pF) IR (µA) 0.6 10 (1) 1 10 MBG446 0.8 handbook, halfpage (2) (3) 0.4 1 0.2 10 2 0 100 Tj (oC) 0 0 200 (1) VR = 50 V; maximum values. (2) VR = 50 V; typical values. (3) VR = 30 V; typical values. f = 1 MHz; Tj = 25 °C. Fig.5 Fig.6 Reverse current as a function of junction temperature. 2003 Mar 25 5 4 8 12 VR (V) 16 Diode capacitance as a function of reverse voltage; typical values. NXP Semiconductors Product data sheet High-speed double diode PMBD6100 handbook, full pagewidth tr tp t D.U.T. IF RS = 50 Ω 10% IF SAMPLING OSCILLOSCOPE t rr t R i = 50 Ω V = VR I F x R S MGA881 (1) 90% VR input signal output signal (1) IR = 1 mA. Fig.7 Reverse recovery voltage test circuit and waveforms. I 1 kΩ 450 Ω V I 90% R S = 50 Ω D.U.T. OSCILLOSCOPE V fr R i = 50 Ω 10% MGA882 t tr input signal Fig.8 Forward recovery voltage test circuit and waveforms. 2003 Mar 25 6 t tp output signal NXP Semiconductors Product data sheet High-speed double diode PMBD6100 PACKAGE OUTLINE Plastic surface mounted package; 3 leads SOT23 D E B A X HE v M A 3 Q A A1 1 2 e1 bp c w M B Lp e detail X 0 1 2 mm scale DIMENSIONS (mm are the original dimensions) UNIT A A1 max. bp c D E e e1 HE Lp Q v w mm 1.1 0.9 0.1 0.48 0.38 0.15 0.09 3.0 2.8 1.4 1.2 1.9 0.95 2.5 2.1 0.45 0.15 0.55 0.45 0.2 0.1 OUTLINE VERSION SOT23 2003 Mar 25 REFERENCES IEC JEDEC EIAJ EUROPEAN PROJECTION ISSUE DATE 97-02-28 99-09-13 TO-236AB 7 NXP Semiconductors Product data sheet High-speed double diode PMBD6100 DATA SHEET STATUS DOCUMENT STATUS(1) PRODUCT STATUS(2) DEFINITION Objective data sheet Development This document contains data from the objective specification for product development. Preliminary data sheet Qualification This document contains data from the preliminary specification. Product data sheet Production This document contains the product specification. Notes 1. Please consult the most recently issued document before initiating or completing a design. 2. The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status information is available on the Internet at URL http://www.nxp.com. Limiting values ⎯ Stress above one or more limiting values (as defined in the Absolute Maximum Ratings System of IEC 60134) may cause permanent damage to the device. Limiting values are stress ratings only and operation of the device at these or any other conditions above those given in the Characteristics sections of this document is not implied. Exposure to limiting values for extended periods may affect device reliability. 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NXP Semiconductors accepts no liability for inclusion and/or use of NXP Semiconductors products in such equipment or applications and therefore such inclusion and/or use is at the customer’s own risk. No offer to sell or license ⎯ Nothing in this document may be interpreted or construed as an offer to sell products that is open for acceptance or the grant, conveyance or implication of any license under any copyrights, patents or other industrial or intellectual property rights. Export control ⎯ This document as well as the item(s) described herein may be subject to export control regulations. Export might require a prior authorization from national authorities. Applications ⎯ Applications that are described herein for any of these products are for illustrative purposes only. NXP Semiconductors makes no representation or warranty that such applications will be suitable for the specified use without further testing or modification. 2003 Mar 25 Quick reference data ⎯ The Quick reference data is an extract of the product data given in the Limiting values and Characteristics sections of this document, and as such is not complete, exhaustive or legally binding. 8 NXP Semiconductors Customer notification This data sheet was changed to reflect the new company name NXP Semiconductors. No changes were made to the content, except for the legal definitions and disclaimers. Contact information For additional information please visit: http://www.nxp.com For sales offices addresses send e-mail to: [email protected] © NXP B.V. 2009 All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights. Printed in The Netherlands 613514/04/pp9 Date of release: 2003 Mar 25 Document order number: 9397 750 10967