V6204605 VID

REVISIONS
LTR
DESCRIPTION
DATE
APPROVED
A
Add EP suffix to generic number and correct the
vendor part number. - CFS
04-01-29
Thomas M. Hess
B
Correct lead finish. Update boilerplate. - CFS
05-11-08
Thomas M. Hess
C
Update boilerplate paragraphs to current
requirements. - PHN
12-03-22
Thomas M. Hess
CURRENT DESIGN ACTIVITY CAGE CODE 16236
HAS CHANGED NAMES TO:
DLA LAND AND MARITIME
COLUMBUS, OHIO 43218-3990
Prepared in accordance with ASME Y14.24
Vendor item drawing
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REV STATUS
OF PAGES
PMIC N/A
PREPARED BY
Phu H. Nguyen
Original date of drawing
CHECKED BY
TITLE
Phu H. Nguyen
YY MM DD
APPROVED BY
03-12-09
MICROCIRCUIT, DIGITAL, FIXED POINT DIGITAL
SIGNAL PROCESSOR, MONOLITHIC SILICON
Thomas M. Hess
SIZE
A
REV
AMSC N/A
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CODE IDENT. NO.
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V62/04605
16236
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OF
43
5962-V043-12
1. SCOPE
1.1 Scope. This drawing documents the general requirements of a high performance Fixed-Point Digital Signal Processor
microcircuit, with an operating temperature range of -40C to +85C.
1.2 Vendor Item Drawing Administrative Control Number. The manufacturer’s PIN is the item of identification. The vendor item
drawing establishes an administrative control number for identifying the item on the engineering documentation:
V62/04605
-
Drawing
number
1.2.1 Device type(s).
01
X
A
Device type
(See 1.2.1)
Case outline
(See 1.2.2)
Lead finish
(See 1.2.3)
1/
Device type
Generic
01
SM32VC5510-EP
Circuit function
Fixed Point Digital Signal Processor
1.2.2 Case outline(s). The case outlines are as specified herein.
Outline letter
Number of pins
X
240
Package style
Plastic ball grid array
1.2.3 Lead finishes. The lead finishes are as specified below or other lead finishes as provided by the device manufacturer:
Finish designator
A
B
C
D
E
Z
1.3 Absolute maximum ratings.
Material
Hot solder dip
Tin-lead plate
Gold plate
Palladium
Gold flash palladium
Other
2/
Supply voltage I/O range, (DVDD) .............................................................................................
Supply voltage core range, (CVDD) ...........................................................................................
Input voltage range, (VI) ...........................................................................................................
Output voltage range, (VO) .......................................................................................................
Operating case temperature ranges, (TC): (Extended) .............................................................
Storage temperature range, (TSTG)............................................................................................
1/
2/
3/
4/
-0.3 V to +4.0 V 3/
-0.3 V to +2.0 V 3/
-0.3 V to +4.5 V
-0.3 V to +4.5 V
-40C to +85C 4/
-55C to +150C 4/
Users are cautioned to review the manufacturers data manual for additional user information relating to this device.
Stresses beyond those listed under “absolute maximum rating” may cause permanent damage to the device. These are stress
ratings only, and functional operation of the device at these or any other conditions beyond those indicated under
“recommended operating conditions” is not implied. Exposure to absolute-maximum-rated conditions for extended periods may
affect device reliability.
All voltage values are with respect to VSS.
Long term high temperature storage and/or extended use at maximum recommended operating conditions may result in a
reduction of overall device life. See manufacturer data for additional information on enhanced plastic packaging.
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1.4 Recommended operating conditions.
3/
Device supply voltage, I/O (DVDD) ..............................................................................
Device supply voltage, core (CVDD) ............................................................................
Supply voltage, GND (VSS) .........................................................................................
High level input voltage, I/O (VIH):
Hysteresis inputs, DVDD = 3.3 0.3 V ....................................................................
All other inputs ......................................................................................................
Low level input voltage, I/O (VIL):
Hysteresis inputs, DVDD = 3.3 0.3 V ....................................................................
All other inputs ......................................................................................................
High level output current, (IOH), All outputs: ................................................................
Low level output current, (IOL), All outputs: .................................................................
Operating case temperature (TC), Extended temperature range ................................
Junction to case (RθJC)
Board type: 2s JEDEC test card 5/ ...................................................................
Junction to air (RθJA)
Board type: High K 6/
Air flow = 0 LFM ........................................................................................
Air flow = 150 LFM ....................................................................................
Air flow = 250 LFM ....................................................................................
Board type: Low K 6/
Air flow = 0 LFM ........................................................................................
Air flow = 150 LFM ....................................................................................
Air flow = 250 LFM ....................................................................................
+3.0 V to +3.6 V
+1.55 V to +1.65 V
0V
5/
2.4 V to DVDD + 0.3 V
2.0 V to DVDD + 0.3 V
-0.3 V to +0.8 V
-0.3 V to +0.8 V
-8 mA maximum
8 mA maximum
-40C to +85C
6C/W
26C/W
22C/W
20C/W
50C/W
35C/W
29C/W
2. APPLICABLE DOCUMENTS
JEDEC – SOLID STATE TECHNOLOGY ASSOCIATION (JEDEC)
JEP95
JESD51-9
–
–
Registered and Standard Outlines for Semiconductor Devices
Test Boards for Area Array Surface Mount Package Thermal Measurements.
(Copies of these documents are available online at http:/www.jedec.org or from JEDEC – Solid State Technology Association, 3103
North 10th Street, Suite 240–S, Arlington, VA 22201.)
5/
6/
Prototype revision 2.1 and 2.2 and production silicon. See the TMS320VC5510 Digital Signal Silicon Errata (literature number
SPRZ008) for further clarification and distinguishing marking.
Board types are as defined by JEDEC. See JEDEC Standard JESD51-9.
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3. REQUIREMENTS
3.1 Marking. Parts shall be permanently and legibly marked with the manufacturer’s part number as shown in 6.3 herein and as
follows:
A.
B.
C.
Manufacturer’s name, CAGE code, or logo
Pin 1 identifier
ESDS identification (optional)
3.2 Unit container. The unit container shall be marked with the manufacturer’s part number and with items A and C (if applicable)
above.
3.3 Electrical characteristics. The maximum and recommended operating conditions and electrical performance characteristics are
as specified in 1.3, 1.4, and table I herein.
3.4 Design, construction, and physical dimension. The design, construction, and physical dimensions are as specified herein.
3.5 Diagrams.
3.5.1
Case outline(s). The case outline(s) shall be as shown in 1.2.2 and figure 1.
3.5.2
Terminal connections. The terminal connections shall be as shown in figure 2.
3.5.3
Load circuit. The load circuit shall be as specified in figure 4.
3.5.4
Timing waveforms. The timing waveforms shall be as shown in figures 5 - 27.
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TABLE I. Electrical performance characteristics.
No.
Test
High level
output voltage
Symbol
All output except CLKOUT
VOH
CLKOUT
Limits
Min
DVDD = 3.3 0.3 V, IOH = Max
2.4
CVDD = 1.6 0.05 V, IOH = Max
1.24
Unit
Max
V
0.4
V
-275
275
A
Bus holders disabled
CVDD = Max, VO = VSS to VDD
-5
5
CVDD = Max, VI = VSS to VDD
-5
300
Input pins with internal
pullup
Pullup enabled
CVDD = Max, VI = VSS to VDD
-300
5
All other input only pins or
input only pins with
pullup/plldown disabled
CVDD = Max, VI = VSS to VDD
-5
5
VOL
Output only or input/output
pins with bus holders
IIZ
All other output only or
input/output pins
Input pins with internal
pulldown
Input current
Test condition
-40C  TC +85C
1.55 V  CVDD  1.65 V
3.0 V  DVDD  3.6 V
unless otherwise noted
Bus holders enabled
CVDD = Max, VO = VSS to VDD
Low level output voltage
Input current for
outputs in high
impedance
1/
II
IOL = Max
A
CVDD supply current, CPU plus internal
memory access 2/
IDDC
CVDD = 1.6 V, TC = 25C
CPU clock = 200 MHz
112 Typ
mA
DVDD supply current, pins active
IDDP
DVDD = 3.3 V, TC = 25C
CPU clock = 100 MHz
8 Typ
mA
IDDC
CVDD = 1.6 V, TC = 25C
10 MHz clock input,
DLL mode = x 20
32 Typ
mA
CVDD = 1.6 V, TC = 25C
Input clock stopped.
69 Typ
A
CVDD = 1.6 V, TC = 55C
Input clock stopped.
374 Typ
CVDD = 1.6 V, TC = 85C
Input clock stopped.
976 Typ
DVDD = 3.3 V, TC = 25C
No pin activity.
10 Typ
DVDD = 3.3 V, TC = 55C
No pin activity.
10 Typ
DVDD = 3.3 V, TC = 85C
No pin activity.
10 Typ
3/
CVDD supply current, standby
Only CLKGEN domain enabled, PLL enabled
CVDD supply current, standby
All domains idled
IDDC
DVDD supply current, standby
All domains idled
IDDP
A
Input capacitance
CI
3 Typ
pF
Output capacitance
CO
3 Typ
pF
See notes at end of table.
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TABLE I. Electrical performance characteristics - Continued.
No.
Test
Symbol
Test condition
-40C  TC +85C
1.55 V  CVDD  1.65 V
3.0 V  DVDD  3.6 V
unless otherwise noted
1/
Limits
Unit
Min
Max
20
4/
CLOCK GENERATION IN BYPASS MODE (DPLL Disabled)
CLKIN in Bypass Mode Timing Requirements
C7
Cycle time, CLKIN
tc(CI)
C8
Fall time, CLKIN
tf(CI)
See figure 5
6
C9
Rise time, CLKIN
tr(CI)
6
C10
Pulse duration, CLKIN low
tW(CIL)
4
C11
Pulse duration, CLKIN high
tW(CIH)
4
ns
CLKOUT in bypass mode switching characteristics
C1
Cycle time, CLKOUT
5/
tc(CO)
See figure 5
20
C2
Delay time, CLKIN high/low to
CLKOUT high/low
C3
Fall time, CLKOUT
C4
Rise time, CLKOUT
C5
Pulse duration , CLKOUT low
tW(COL)
H-1
H+1
C6
Pulse duration , CLKOUT high
tW(COH)
H-1
H+1
td(CI-CO)
ns
1
14
tf(CO)
1 Typ
tr(CO)
1 Typ
CLOCK GENERATION IN LOCK MODE (DPLL Synthesis Enabled)
CLKIN in lock mode timing requirements
C7
Cycle time, CLKIN
DPLL synthesis enable
tc(CI)
See figure 6
20
6/
C8
Fall time, CLKIN
tf(CI)
C9
Rise time, CLKIN
C10
Pulse duration, CLKIN low
tW(CIL)
4
C11
Pulse duration, CLKIN high
tW(CIH)
4
400
ns
6
tr(CI)
6
CLKOUT in lock mode switching characteristics
C1
Cycle time, CLKOUT
C2
Delay time, CLKIN high/low to
CLKOUT high/low
tc(CO)
See figure 6
5
td(CI-CO)
ns
1
14
C3
Fall time, CLKOUT
tf(CO)
1 Typ
C4
Rise time, CLKOUT
tr(CO)
1 Typ
C5
Pulse duration , CLKOUT low
tW(COL)
H-1
H+1
C6
Pulse duration , CLKOUT high
tW(COH)
H-1
H+1
See notes at end of table.
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TABLE I. Electrical performance characteristics - Continued.
No.
Test
Symbol
1/
Test condition
-40C  TC +85C
1.55 V  CVDD  1.65 V
3.0 V  DVDD  3.6 V
unless otherwise noted
Limits
Min
Unit
Max
ASYNCHRONOUS MEMORY TIMING
Asynchronous memory cycles timing requirements
A6
Setup time, read data valid before CLKOUT high 7/
tsu(DV-COH)
A7
Hold time, read data valid after CLKOUT high
th(COH-DV)
0
A10
Setup time, ARDY valid before CLKOUT high
tsu(ARDY-COH)
7
A11
Hold time, ARDY valid after CLKOUT high
th(COH-ARDY)
0
Asynchronous memory cycle switching characteristics
See figure 7 and 8
6
ns
8/ 9/
A1
Delay time, CLKOUT high to CEx transaction
td(COH-CEV)
A2
Delay time, CLKOUT high to BEx valid
td(COH-BEV)
A3
Delay time, CLKOUT high to BEx invalid
td(COH-BEIV)
A4
Delay time, CLKOUT high to address valid
td(COH-AV)
A5
Delay time, CLKOUT high to address invalid
See figure 7 and 8
-2
4
4
-2
4
td(COH-AIV)
-2
Delay time, CLKOUT high to AOE valid
td(COH-AOEV)
-2
4
A9
Delay time, CLKOUT high to ARE
td(COH-AREV)
-2
4
A12
Delay time, CLKOUT high to data valid (write)
A13
Delay time, CLKOUT high to data invalid (write)
A8
A14
Delay time, CLKOUT high to AWE valid
ns
td(COH-DV)
4
td(COH-DIV)
-2
td(COH-AWEV)
-2
4
See notes at end of table.
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TABLE I. Electrical performance characteristics - Continued.
No.
Test
Symbol
1/
Test condition
-40C  TC +85C
1.55 V  CVDD  1.65 V
3.0 V  DVDD  3.6 V
unless otherwise noted
Limits
Min
Unit
Max
SYNCHRONOUS BURST SRAM (SBSRAM) TIMING
Synchronous burst SRAM cycle timing requirements
SB7
Setup time, read data valid before
CLKMEM high
tsu(DV-CLKMEMH)
SB8
Hold time, read data valid after
CLKMEM high
th(CLKMEMH-DV)
See figure 9
5
ns
2
Synchronous burst SRAM cycle switching characteristics
SB1
Delay time, CLKMEM high to CEx low
td(CLKMEMH-CEL)
SB2
Delay time, CLKMEM high to CEx
high
SB3
See figure 9
3
6
td(CLKMEMH-CEH)
3
6
Delay time, CLKMEM high to BEx
valid
td(CLKMEMH-BEV)
3
6
SB4
Delay time, CLKMEM high to BEx
invalid
td(CLKMEMH-BEIV)
3
6
SB5
Delay time, CLKMEM high to address
valid
td(CLKMEMH-AV)
3
6
SB6
Delay time, CLKMEM high to address
invalid
td(CLKMEMH-AIV)
3
6
SB9
Delay time, CLKMEM high to SSADS
low
td(CLKMEMH-ADSL)
3
6
SB10
Delay time, CLKMEM high to SSADS
high
td(CLKMEMH-ADSH)
3
6
SB11
Delay time, CLKMEM high to SSOE
low
td(CLKMEMH-OEL)
3
6
SB12
Delay time, CLKMEM high to SSOE
high
td(CLKMEMH-OEH)
3
6
SB13
Delay time, CLKMEM high to data valid
td(CLKMEMH-DV)
3
6
SB14
Delay time, CLKMEM high to data
invalid
td(CLKMEMH-DIV)
3
6
SB15
Delay time, CLKMEM high to SSWE
low
td(CLKMEMH-WEL)
3
6
SB16
Delay time, CLKMEM high to SSWE
high
td(CLKMEMH-WEH)
3
6
ns
See notes at end of table.
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TABLE I. Electrical performance characteristics - Continued.
No.
Test
Symbol
1/
Test condition
-40C  TC +85C
1.55 V  CVDD  1.65 V
3.0 V  DVDD  3.6 V
unless otherwise noted
Limits
Min
Unit
Max
SYNCHRONOUS DRAM (SDRAM) TIMING
Synchronous DRAM cycle timing requirements
SB7
Setup time, read data valid before
CLKMEM high
tsu(DV-CLKMEMH)
SB8
Hold time, read data valid after
CLKMEM high
th(CLKMEMH-DV)
See figure 10-12
5
ns
2
Synchronous DRAM cycle switching characteristics
SB1
Delay time, CLKMEM high to CEx low
td(CLKMEMH-CEL)
SB2
Delay time, CLKMEM high to CEx high
SB3
3
6
td(CLKMEMH-CEH)
3
6
Delay time, CLKMEM high to BEx valid
td(CLKMEMH-BEV)
3
6
SB4
Delay time, CLKMEM high to BEx
invalid
td(CLKMEMH-BEIV)
3
6
SB5
Delay time, CLKMEM high to address
valid
td(CLKMEMH-AV)
3
6
SB6
Delay time, CLKMEM high to address
invalid
td(CLKMEMH-AIV)
3
6
SB9
Delay time, CLKMEM high to SDCAS
low
td(CLKMEMH-SDCASL)
3
5
SB10
Delay time, CLKMEM high to SDCAS
high
td(CLKMEMH-SDCASH)
3
5
SB11
Delay time, CLKMEM high to data valid
td(CLKMEMH-DV)
3
5
SB12
Delay time, CLKMEM high to data
invalid
td(CLKMEMH-DIV)
3
5
SB13
Delay time, CLKMEM high to SDWE
low
td(CLKMEMH-SDWEL)
3
5
SB14
Delay time, CLKMEM high to SDWE
high
Delay time, CLKMEM high to SDA10
valid
Delay time, CLKMEM high to SDA10
invalid
td(CLKMEMH-SDWEH)
3
5
td(CLKMEMH-SDA10V)
3
5
td(CLKMEMH-SDA10IV)
3
5
SB15
SB16
See figure 10-12
SB17
Delay time, CLKMEM high to SSWE
low
td(CLKMEMH-SDRASL)
3
5
SB18
Delay time, CLKMEM high to SSWE
high
td(CLKMEMH-SDRASH)
3
5
ns
See notes at end of table.
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TABLE I. Electrical performance characteristics - Continued.
No.
Test
Symbol
1/
Test condition
-40C  TC +85C
1.55 V  CVDD  1.65 V
3.0 V  DVDD  3.6 V
unless otherwise noted
Limits
Min
Unit
Max
HOLD AND HOLDA TIMINGS
HOLD and HOLDA timing requirements
H1
Setup time, HOLD high before CLKOUT high
10/
HOLD and HOLDA switching characteristics
tsu(HOLDH-COH)
See figure 13
7
tR(COH-BHZ)
See figure 13
4P
ns
11/
H2
Response time, CLKOUT high to EMIF bus
high impedance (HZ) 13/
12/
H3
Response time, CLKOUT high to HOLDA low
tR(COH-HOLDAL)
5P-1
H4
Response time, CLKOUT high to HOLDA
high
tR(COH-HOLDAH)
4P-1
4P+5
H5
Response time, CLKOUT high to EMIF bus
low impedance (LZ) (active) 13/
tR(COH-BLZ)
4P-1
4P+5
ns
RESET TIMINGS
Reset timing requirements
R1
Pulse width, reset low
tw(RSL)
See figure 14
td(RSL-EMIFHZ)
See figure 14
2P+5
ns
Reset timing switching characteristics
R3
Delay time, reset low to EMIF group high
impedance 14/
R4
Delay time, reset low to EMIF group valid
14/
td(RSL-EMIFV)
38P+19
R5
Delay time, reset low to low group invalid
15/
td(RSL-LOWIV)
17
R6
Delay time, reset low to low group valid
td(RSL-LOWV)
38P+17
R7
Delay time, reset low to high group invalid 15/
td(RSL-HIGHIV)
9
R8
Delay time, reset low to high group valid
td(RSL-HIGHV)
38P+9
R9
Delay time, reset low to Z group high
impedance 16/
td(RSL-ZHZ)
18
R10
Delay time, reset low to Z group valid
td(RSL-ZV)
38P+18
15/
15/
16/
19
ns
EXTERNAL INTERRUPT TIMINGS
External interrupt timing requirements
11/
I1
Pulse width, interrupt low, CPU active
tw(INTL)A
I2
Pulse width, interrupt high, CPU active
tw(INTH)A
See figure 15
3P
ns
2P
See notes at end of table.
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TABLE I. Electrical performance characteristics - Continued.
No.
Test
1/
Test condition
-40C  TC +85C
1.55 V  CVDD  1.65 V
3.0 V  DVDD  3.6 V
unless otherwise noted
Symbol
Limits
Unit
Min
Max
0
4
0
4
XF TIMINGS
XF switching characteristics
X1
Delay time, CLKOUT high to XF high
td(XF)
See figure 16
Delay time, CLKOUT high to XF low
ns
GENERAL PURPOSE INPUT/OUTPUT (IOx) TIMINGS
General Purpose Input/Output (GPIO) pins configured as Inputs timing requirements
G2
Setup time, IOx input valid before
CLKOUT high
tsu(GPIO-COH)
G3
Hold time, IOx input valid after CLKOUT
high
th(COH-GPIO)
See figure 17
8
ns
0
General Purpose Input/Output (GPIO) pins configured as Inputs switching characteristics.
G1
Delay time, CLKOUT high to IOx output
change
td(COH-GPIO)
See figure 17
0
6
ns
TIN/TOUT TIMINGS
TIN/TOUT pins configures as Inputs timing requirements 11/
T4
Pulse width TIN/TOUT low
tw(TIN/TOUTL)
T5
Pulse width TIN/TOUT high
tw(TIN/TOUTH)
TIN/TOUT pins configures as outputs switching characteristics
T1
Delay time, CLKOUT high to TIN/TOUT
high
td(COH-TIN/TOUTH)
T2
Delay time, CLKOUT high to TIN/TOUT
low
T3
Pulse duration, TIN/TOUT (output)
See figure 18
2P+1
ns
2P+1
11/ 17/
See figure 18
0
2
td(COH-TIN/TOUTL)
0
2
tw(TIN/TOUT)
P
ns
See notes at end of table.
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PAGE
11
TABLE I. Electrical performance characteristics - Continued.
No.
Test
1/
Test condition
-40C  TC +85C
1.55 V  CVDD  1.65 V
3.0 V  DVDD  3.6 V
unless otherwise noted
Symbol
Limits
Min
Unit
Max
MULTICHANNEL BUFFERED SERIAL PORT (McBSP) TIMINGS
McBSP transmit and receive timings 11/ 18/
M11
Cycle time, CLKR/X
tc(CKRX)
CLKR/X ext
2P
M12
Pulse duration, CLKR/X high or CLKR/X
low
tw(CKRX)
CLKR/X ext
P-1
M13
Rise time, CLKR/X
tr(CKRX)
CLKR/X ext
5
M14
Fall time, CLKR/X
tf(CKRX)
CLKR/X ext
5
M15
Setup time, external FSR high before
CLKR low
tsu(FRH-CKRL)
Hold time, external FSR high after CLKR
low
th(CKRL-FRH)
M17
Setup time, DR valid before CLKR low
tsu(DRV-CKRL)
M18
Hold time, DR valid after CLKR low
th(CKRL-DRV)
M16
M19
Setup time, external FSX high before
CLKX low
tsu(FXH-CKXL)
M20
Hold time, external FSX high after CLKX
low
th(CKXL-FXH)
See figure 19
CLKR int
5
CLKR ext
1
CLKR int
0
CLKR ext
2
CLKR int
4
CLKR ext
1
CLKR int
0
CLKR ext
2
CLKR int
5
CLKR ext
1
CLKR int
0
CLKR ext
2
ns
See notes at end of table.
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12
TABLE I. Electrical performance characteristics - Continued.
No.
Test
Symbol
1/
Test condition
-40C  TC +85C
1.55 V  CVDD  1.65 V
3.0 V  DVDD  3.6 V
unless otherwise noted
Limits
Min
Unit
Max
MULTICHANNEL BUFFERED SERIAL PORT (McBSP) TIMINGS - Continued
McBSP switching characteristics 11/ 18/
M1
Cycle time, CLKR/X
CLKR/X int
2P
M2
Pulse duration, CLKR/X high
tw(CKRXH)
CLKR/X int
D - 1 19/
D + 1 19/
ns
M3
Pulse duration, CLKR/X low
tw(CKRXL)
CLKR/X int
C - 1 19/
D + 1 19/
ns
M4
Delay time, CLKR high to internal
FSR valid
td(CKRH-FRV)
-2
2
ns
CLKR ext
3
7
M5
Delay time, CLKX high to internal
FSX valid
td(CKXH-FXV)
CLKR int
-2
2
CLKR ext
3
7
CLKR int
0
2
CLKR ext
1
11
M6
Disable time, CLKX high to DX high
impedance following last data bit
Delay time, CLKX high to DX valid.
This applied to all bits except the
first bit transmitted.
M7
M8
Delay time, CLKX high to DX valid
20/
tc(CKRX)
td(CKXH-DXV)
DXENA = 0
Only applies to first bit transmitted
when in data delay 1 or 2
(XDATDLY = 01b or 10b) modes
DXENA = 1
Enable time, CLKX high to DX
driven 20/
DXENA = 0
ten(CKXH-DX)
Delay time, FSX high to DX valid
20/
DXENA = 1
td(FXH-DXV)
Only applies to first bit transmitted
when in data delay 0
(XDATDLY = 00b) mode.
M10
CLKR int
tdis(CKXH-DXHZ)
Only applies to first bit transmitted
when in data delay 1 or 2
(XDATDLY = 01b 0r 10b) modes
M9
See figure 19
Enable time, FSX high to DX driven
20/
DXENA = 0
DXENA = 1
ten(FXH-DX)
Only applies to first bit transmitted
when in data delay 0
(XDATDLY = 00b) mode.
DXENA = 0
DXENA = 1
ns
CLKR int
6
CLKR ext
9
CLKR int
6
CLKR ext
9
CLKR int
2P+6
CLKR ext
2P+9
CLKR int
0
CLKR ext
6
CLKR int
P
CLKR ext
P+6
ns
ns
ns
CLKR int
5
CLKR ext
9
CLKR int
2P+5
CLKR ext
2P+9
CLKR int
ns
ns
0
CLKR ext
6
CLKR int
P
CLKR ext
P+6
ns
See notes at end of table.
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PAGE
13
TABLE I. Electrical performance characteristics - Continued.
No.
Test
Symbol
1/
Test condition
-40C  TC +85C
1.55 V  CVDD  1.65 V
3.0 V  DVDD  3.6 V
unless otherwise noted
Limits
Min
Unit
Max
McBSP GENERAL PURPOSE I/O TIMING
McBSP general purpose I/O timing requirements
M22
Setup time, MGPIOx input mode
before CLKOUT high 21/
tsu(MGPIO-COH)
M23
Hold time, MGPIOx input mode after
CLKOUT high 21/
th(COH-MGPIO)
See figure 20
7
ns
0
McBSP general purpose I/O switching characteristics
M21
Delay time, CLKOUT high to MGPIOx
output mode 22/
td(COH-MGPIO)
See figure 20
0
3
ns
See notes at end of table.
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PAGE
14
TABLE I. Electrical performance characteristics - Continued.
No.
Test
Symbol
Test condition
-40C  TC +85C
1.55 V  CVDD  1.65 V
3.0 V  DVDD  3.6 V
unless otherwise noted
1/
Limits
Unit
Master
Min
Slave
Max
Min
Max
McBSP as SPI MASTER OR SLAVE TIMING
McBSP as SPI Master or Slave timing requirements (CLKSTP = 10b, CLKXP = 0) 11/ 23/
M30
Setup time, DR valid before CLKX low
tsu(DRV-CKXL)
M31
Hold time, DR valid after CLKX low
th(CKXL-DRV)
M32
Setup time, FSX low before CLKX high
M33
Cycle time, CLKX
See figure 21
4
3-6P
1
1+6P
tsu(BFXL-CKXH)
ns
10
tc(CKX)
2P
McBSP as SPI Master or Slave switching characteristics (CLKSTP = 10b, CLKXP = 0)
See figure 21
16P
11/ 19/ 23/
M24
Delay time, FSX low to CLKX low
24/
td(CKXL-FXL)
T-1
T+3
M25
Delay time, FSX low to CLKX high 25/
td(FXL-CKXH)
C-2
C+2
M26
Delay time, CLKX high to DX valid
td(CKXH-DXV)
-2
4
M27
Disable time, DX high impedance
following last data bit from CLKX low
tdis(CKXL-
C-2
C
M28
Disable time, DX high impedance
following last data bit from FSX high
M29
Delay time, FSX low to DX valid
ns
3P+2
5P+8
tdis(FXH-DXHZ)
3P+8
3P+20
td(FXL-DXV)
3P-3
3P+20
DXHZ)
See notes at end of table.
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PAGE
15
TABLE I. Electrical performance characteristics - Continued.
No.
Test
Symbol
Test condition
-40C  TC +85C
1.55 V  CVDD  1.65 V
3.0 V  DVDD  3.6 V
unless otherwise noted
1/
Limits
Unit
Master
Min
Slave
Max
Min
Max
McBSP as SPI MASTER OR SLAVE TIMING - Continued
McBSP as SPI Master or Slave timing requirements (CLKSTP = 11b, CLKXP = 0) 11/ 23/
M39
Setup time, DR valid before CLKX high
tsu(DRV-CKXH)
M40
Hold time, DR valid after CLKX high
th(CKXH-DRV)
M41
Setup time, FSX low before CLKX high
tsu(FXL-CKXH)
M42
Cycle time, CLKX
See figure 21
4
3-6P
1
1+6P
ns
10
tc(CKX)
2P
16P
McBSP as SPI Master or Slave switching characteristics (CLKSTP = 11b, CLKXP = 0)
11/ 19/ 23/
M34
Delay time, FSX low to CLKX low 24/
td(CKXL-FXL)
C-1
C+3
M35
Delay time, FSX low to CLKX high 25/
td(FXL-CKXH)
T-2
T+2
M36
Delay time, CLKX low to DX valid
td(CKXL-DXV)
-2
4
3P+2
5P+8
M37
Disable time, DX high impedance
following last data bit from CLKX low
tdis(CKXL-
-2
0
3P+8
3P+21
D-2
D+10
3P-3
3P+21
M38
Delay time, FSX low to DX valid
See figure 21
DXHZ)
td(FXL-DXV)
McBSP as SPI Master or Slave timing requirements (CLKSTP = 10b, CLKXP = 1)
M49
Setup time, DR valid before CLKX high
ns
tsu(DRV-CKXH)
M50
Hold time, DR valid after CLKX high
th(CKXH-DRV)
M51
Setup time, FSX low before CLKX low
tsu(FXL-CKXL)
M52
Cycle time, CLKX
See figure 22
11/ 23/
4
3-6P
1
1+6P
ns
10
tc(CKX)
2P
16P
McBSP as SPI Master or Slave switching characteristics (CLKSTP = 10b, CLKXP = 1) 11/ 19/ 23/
M43
Delay time, FSX low to CLKX high 24/
td(CKXH-FXL)
T-1
T+3
M44
Delay time, FSX low to CLKX low 25/
td(FXL-CKXL)
D-2
D+2
M45
Delay time, CLKX low to DX valid
td(CKXL-DXV)
-2
4
M46
Disable time, DX high impedance
following last data bit from CLKX high
tdis(CKXH-
D-2
D
M47
Disable time, DX high impedance
following last data bit from FSX high
M48
Delay time, FSX low to DX valid
See figure 22
ns
3P+2
5P+8
tdis(FXH-DXHZ)
3P+8
3P+20
td(FXL-DXV)
3P-3
3P+20
DXHZ)
See notes at end of table.
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PAGE
16
TABLE I. Electrical performance characteristics - Continued.
No.
Test
Symbol
Test condition
-40C  TC +85C
1.55 V  CVDD  1.65 V
3.0 V  DVDD  3.6 V
unless otherwise noted
1/
Limits
Unit
Master
Min
Slave
Max
Min
Max
McBSP as SPI MASTER OR SLAVE TIMING - Continued
McBSP as SPI Master or Slave timing requirements (CLKSTP = 11b, CLKXP = 1) 11/ 23/
M58
Setup time, DR valid before CLKX low
tsu(DRV-CKXL)
M59
Hold time, DR valid after CLKX low
th(CKXL-DRV)
M60
Setup time, FSX low before CLKX low
tsu(FXL-CKXL)
M61
Cycle time, CLKX
See figure 22
4
3-6P
1
1+6P
ns
10
tc(CKX)
2P
16P
McBSP as SPI Master or Slave switching characteristics (CLKSTP = 11b, CLKXP = 1)
11/ 19/ 23/
M53
Delay time, FSX low to CLKX high 24/
td(CKXH-FXL)
D-1
D+3
M54
Delay time, FSX low to CLKX low 25/
td(FXL-CKXL)
T-2
T+2
M55
Delay time, CLKX high to DX valid
td(CKXH-DXV)
-2
4
3P+2
5P+8
M56
Disable time, DX high impedance
following last data bit from CLKX high
tdis(CKXH-
-2
0
3P+8
3P+21
Delay time, FSX low to DX valid
td(FXL-DXV)
C-2
C+10
3P-3
3P+21
M57
See figure 22
ns
DXHZ)
See notes at end of table.
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17
TABLE I. Electrical performance characteristics - Continued.
No.
Test
Symbol
1/
Test condition
-40C  TC +85C
1.55 V  CVDD  1.65 V
3.0 V  DVDD  3.6 V
unless otherwise noted
Limits
Min
Unit
Max
ENHANCED HOST PORT INTERFACE (EHPI) TIMING
EHPI timing requirements
E11
Setup time, HAS low before HDS low
tsu(HASL-HDSL)
See figure 23-27
4
E12
Hold time, HAS low after HDS low
th(HDSL-HASL)
3
E13
Setup time, (HR/ W , HA[19:0],
tsu(HCNTLV-HDSL)
4
th(HDSL-HCNTLIV)
4
ns
HCNTL[1:0]) valid before HDS low
E14
Hold time, (HR/ W , HA[19:0],
HCNTL[1:0]) invalid after HDS low
E15
Pulse duration, HDS low
tw(HDSL)
4P 11/
E16
Pulse duration, HDS high
tw(HDSH)
4P 11/
E17
Setup time, HD bus write data valid before
tsu(HDV-HDSH)
5
th(HDSH-HDIV)
3
tsu(HCNTLV-HASL)
5
th(HASL-HCNTLIV)
3
HDS high
E18
Hold time, HD bus write data invalid after
HDS high
E19
Setup time, (HR/ W ,HCNTL[1:0]) valid
before HAS low
E20
Hold time, (HR/ W ,HCNTL[1:0]) valid after
HAS low
See notes at end of table.
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TABLE I. Electrical performance characteristics - Continued.
No.
Test
Symbol
1/
Test condition
-40C  TC +85C
1.55 V  CVDD  1.65 V
3.0 V  DVDD  3.6 V
unless otherwise noted
Limits
Unit
Min
Max
6
16
ENHANCED HOST PORT INTERFACE (EHPI) TIMING - Continued
EHPI switching characteristics
E1
Delay time, HDS low to HD bus read data
driven (memory access)
td(HDSL-HDD)M
E2
Delay time, HDS low to HD bus read data
valid (memory access)
td(HDSL-HDV)M
14P+10
11/ 26/
E4
Delay time, HDS low to HD bus read data
driven (register access)
td(HDSL-HDD)R
6
E5
Delay time, HDS low to HD bus read data
valid (register access)
td(HDSL-HDV)R
E6
Disable time, HDS high to HD bus read
data invalid
tdis(HDSH-HDIV)
E7
Disable time, HDS low to HRDY low
(during reads)
td(HDSL-HRDYL)
E8
Delay time, HD bus valid to HRDY high
(during reads)
td(HDV-HRDYH)
E9
Disable time, HDS high to HRDY low
(during writes)
td(HDSH-HRDYL)
E10
Disable time, HDS high to HRDY high
(during writes)
td(HDSH-HRDYH)
See figure 23-27
ns
16
16
6
16
P+10
11/
2
16
14P+10
11/
See notes at end of table.
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19
TABLE I. Electrical performance characteristics - Continued.
1/
1/
8/
9/
Testing and other quality control techniques are used to the extent deemed necessary to assure product performance over
the specified temperature range. Product may not necessarily be tested across the full temperature range and all parameters
may not necessarily be tested. In the absence of specific parametric testing, product performance is assured by
characterization and/or design.
Test conditions: CPU executing 75% Dual-MAC / 25% ADD with moderate data bus activity (table of sine values). CPU and
CLKGEN domains are active. All other domains are idled. The DPLL is enabled.
Test conditions: One word of a table of 16 bit sine values is writtern to the EMIF each microsecond (16 Mbps). Each EMIF
output pin is connected to a 10 pF load capacitance.
This device utilizes a fully static design and therefore can operate with tc(CI) approaching . The device is characterized at
frequencies approaching 0 Hz.
M
Clock frequency synthesis factor which is determined by: N =
DL
Where : M = the multiply factoir set in the PLL_MULT field of the clock mode register,
DL = the divide factor set in the PLL_DIV field of the clock mode register
Valid values for M are (multiply by) 2 to 31. Valid values for DL are (divide by) 1, 2, 3, and 4. For more detail information
see manufacturer data.
The clock frequency factor and minimum CLKIN cycle time should be chosen such that the resulting CLKOUT cycle time is
within the specified range (tc(CO)).
To ensure data setup time, simply program the strobe width wide enough. ARDY is internally synchronized. If ARDY does
meet setup or hold time, it may be recognized in the current cycle or the next cycle. Thus, ARDY can be asynchronous input.
The minimum delay is also the minimum output hold after CLKOUT high.
All timings referenced to CLKOUT assume CLKOUT represents the internal CPU clock (divide-by 1 mode).
10/
11/
HOLD is synchronized internally. If the setup time shown not met, HOLD will be recognized on the next clock cycle.
P = 1/CPU clock frequency in ns. For example, when running parts at 200 MHz, use P = 5 ns.
12/
All pending EMIF transactions are allowed to complete before HOLDA is asserted. If no bus transactions are occurring, then
the minimum delay time can be achieved. Also, bus hold can be indefinitely delayed by setting NOHOLD = 1.
13/
EMIF bus consists of CE[3 : 0] , BE[3 : 0] , D[31:0], A[21:0], ARE , AOE , AWE , SSADS , SSOE , SSWE , CLKMEM,
2/
3/
4/
5/
6/
7/
SDA10, SDRAS , SDCAS , and SDWE .
14/
15/
16/
17/
18/
19/
20/
21/
22/
23/
24/
25/
26/
EMIF bus consists of CE[3 : 0] , BE[3 : 0] , CLKMEM, AOE , AWE , SSADS , SSOE , SSWE , SDRAS , SDCAS , SDWE ,
and SDA10.
High group: HINT
Low group: HOLDA
Z group: A[21:0], D[31:0], CLKR[2:0], CLKX[2:0], FSR[2:0], FSX[2:0], DX[2:0], IO[7:0], XF, and TIN/TOUT[1:0].
For proper operation of the TIN/TOUT pin configured as an output, the time period must be configured for at least 4 cycles.
Polarity bits CLKRP = CLKXP = FSRP = FSXP = 0. If the polarity of any of the signals is inverted, then the timing references
of that signal are also inverted.
T = CLKRX period = (1+ CLKGDV)*P
C = CLKLX low pulse width = T/2 when CLKGDV is odd or zero and = (CLKGDV/2)*P when CLKGDV is even
D = CLKLX high pulse width = T/2 when CLKGDV is odd or zero and = (CLKGDV/2 + 1)*P when CLKGDV is even.
See manufacturer for the TMS320C55x DSP Peripherals Reference Guide (literature number SPRU317) for a description of
the DX enable (DXENA) and data delay features of the McBSP.
MGPIOx refers to CLKRx, FSRx, DRx, CLKXx, or FSXx when configured as a general purpose input.
MGPIOx refers to CLKRx, FSRx, CLKXx, FSXx, or DXx when configured as a general purpose output.
For all SPI slave modes, CLKG is programmed as ½ of the CPU clocks by setting CLKSM = CLKGDV = 1.
FSRP = FSXP =1. As SPI master, FSX is inverted to provide active low slave enable output. As a slave, the active low
signal input on FSX and FSR is inverted before being used internally.
CLKXM = FSXM = 1, CLKRM = FSRM = 0 for master McBSP
CLKXM = FSXM = CLKRM = FSRM = 0 for slave McBSP.
FSX should be low before the rising edge of clock to enable slave devices and then begin as SPI transfer at the rising edge of
the master clock (CLKX).
EHPI latency is dependent on the number of DMA channels active, their priorities and their source/destination ports. The
latency shown assumes no competing CPU or DMA activity to the memory resource being accessed by the EHPI.
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Case X
Millimeters
Symbol
Min
Max
A
1.40
A1
0.85
0.95
A2
0.35
0.45
b
0.45
0.55
D/E
14.90
15.10
D1/E1
12.80 Typ
e
0.80 Typ
Notes:
1. All linear dimensions are in millimeters.
2. This drawing is subject to change without notice.
FIGURE 1. Case outlines.
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PIN
No.
A1
PIN
NAME
VSS
PIN
No.
B1
PIN
NAME
VSS
PIN
No.
C1
PIN
NAME
A10
PIN
No.
D1
PIN
NAME
DVDD
PIN
No.
E1
PIN
NAME
A11
A2
A9
B2
XF
C2
D13
D2
D14
E2
D15
A3
DVDD
B3
D9
C3
D10
D3
D11
E3
D12
A4
A8
B4
D7
C4
A6
D4
D8
E4
CE3
A5
CVDD
B5
D5
C5
A7
D5
D6
E5
BOOTM3
A6
A4
B6
D3
C6
A5
D6
D4
E6
CVDD
A7
DVDD
B7
A2
C7
A3
D7
D1
E7
CVDD
A8
D2
B8
A0
C8
D0
D8
A1
E8
NC
A9
VSS
B9
CLKMEM
C9
HD4
D9
HD15
E9
NC
A10
VSS
B10
SDA10
C10
HD5
D10
HD14
E10
CVDD
A11
SDRAS
B11
HD2
C11
HD6
D11
HD13
E11
NC
A12
DVDD
B12
SDWE
C12
HD7
D12
HD12
E12
NC
A13
SDCAS
B13
HD1
C13
HD8
D13
HD11
E13
RSVD9
A14
CVDD
B14
HDRY
C14
HD9
D14
HDS2
E14
HA12
A15
HD10
B15
HD3
C15
HR/ W
D15
HA11
E15
HA10
A16
VSS
B16
HD0
C16
HCS
D16
HA0
E16
HA1/HCNTL1
A17
VSS
B17
HDS1
C17
TRST
D17
DVDD
E17
RST_MODE
F1
DVDD
G1
CE2
H1
VSS
J1
VSS
K1
IO7
F2
A13
G2
A17
H2
CE1
J2
CE0
K2
BE0
F3
A12
G3
A15
H3
A19
J3
A21
K3
BE1
F4
A16
G4
A14
H4
A18
J4
A20
K4
IO0
F5
CVDD
G5
NC
H5
NC
J5
NC
K5
CVDD
F13
RSVD8
G13
RSVD7
H13
RSVD6
J13
RSVD5
K13
RSVD4
F14
HA9
G14
HA8
H14
HA4
J14
HA5
K14
TMS
F15
HA2/ HAS
G15
HA3
H15
CLKOUT
J15
HA15
K15
HBE0
F16
CLKIN
G16
RESET
H16
HA14
J16
HA7
K16
HA16
F17
CVDD
G17
HA13
H17
VSS
J17
VSS
K17
HA6
FIGURE 2. Terminal connections.
DEFENSE SUPPLY CENTER, COLUMBUS
COLUMBUS, OHIO
SIZE
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PIN
No.
N1
PIN
NAME
DVDD
PIN
No.
P1
PIN
NAME
IO3/BOOTM2
PIN
No.
R1
PIN
NAME
CVDD
PIN
No.
T1
PIN
NAME
D17
PIN
No.
U1
PIN
NAME
VSS
N2
IO4
P2
CLKS1
R2
FSR1
T2
IO2/BOOTM1
U2
VSS
N3
D16
P3
DR1
R3
D18
T3
CLKR1
U3
CLKR0
N4
SSADS
P4
D19
R4
D20
T4
D21
U4
CVDD
N5
NC
P5
D22
R5
CLKR2
T5
FSR0
U5
CLKS0
N6
CVDD
P6
D23
R6
FSR2
T6
DR0
U6
DVDD
N7
NC
P7
D24
R7
DR2
T7
D25
U7
CLKX0
N8
NC
P8
CLKS2
R8
D26
T8
D27
U8
CLKX2
N9
NC
P9
FSX0
R9
FSX2
T9
D29
U9
VSS
N10
CVDD
P10
D31
R10
DX0
T10
D30
U10
VSS
N11
NC
P11
D28
R11
INT 5
T11
NC
U11
DX2
N12
NC
P12
INT 4
R12
INT 0
T12
NMI
U12
CVDD
N13
RSVD1
P13
ARDY
R13
INT2
T13
AWE
U13
INT1
N14
HINT
P14
HOLDA
R14
ARE
T14
INT 3
U14
DVDD
N15
HCNTL0
P15
TIN/TOUT0
R15
CLKX1
T15
FSX1
U15
AOE
N16
HMODE
P16
CLKMD
R16
EMU0
T16
DX1
U16
HOLD
N17
HA19
P17
CVDD
R17
TIN/TOUT1
T17
VSS
U17
VSS
L1
CVDD
M1
IO5
L2
IO6
M2
SSWE
L3
BE2
M3
SSOE
L4
BE3
M4
IO1/BOOTM0
L5
NC
M5
NC
L13
RSVD3
M13
RSVD2
L14
EMU1/ OFF
M14
HA18
L15
TDO
M15
HA17
L16
TDI
M16
HBE1
L17
TCK
M17
DVDD
FIGURE 2. Terminal connections - Continued.
DEFENSE SUPPLY CENTER, COLUMBUS
COLUMBUS, OHIO
SIZE
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FIGURE 3. Block diagram.
DEFENSE SUPPLY CENTER, COLUMBUS
COLUMBUS, OHIO
SIZE
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Where:
IOL – test
IOH – test
VLoad
CT
= +2 mA (all outputs)
= -2 mA (all outputs)
= 50% of DVDD
= 15 pF typical load circuit capacitance.
FIGURE 4. Load circuit.
Notes:
1. The relationship of CLKIN to CLKOUT depends on the device factor chosen. The waveform relationship shown above is
intended to illustrate the timing parameters only and may differ based on configuration.
FIGURE 5. Timing waveforms.
DEFENSE SUPPLY CENTER, COLUMBUS
COLUMBUS, OHIO
SIZE
A
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Notes:
1. The waveform relationship of CLKIN to CLKOUT depends on the multiply and divide factors chosen. The waveform relationship
shown above is intended to illustrate the timing parameters only and may differ based on configuration.
FIGURE 6. Timing waveforms.
Notes:
1. Setup, Strobe, Hold, and Extended Hold are programmable in the EMIF. The programmable HOLD period is not associated with
2.
the activity of the HOLD and HOLDA signals.
The extended hold time is programmable in the EMIF and is only present when consecutive memory accesses are made to
3.
4.
5.
different CEx spaces, or are of different types (read/write).
All timings referenced to CLKOUT assume CLKOUT is the same frequency as the internal CPU clock (divide-by 1 mode).
The chip enable that becomes active depends on the address.
ARDY is synchronized internally. If the setup time shown is not met, ARDY will be recognized on the next clock cycle.
FIGURE 7. Timing waveforms.
DEFENSE SUPPLY CENTER, COLUMBUS
COLUMBUS, OHIO
SIZE
A
CODE IDENT NO.
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Notes:
1. Setup, Strobe, Hold, and Extended Hold are programmable in the EMIF. The programmable HOLD period is not associated with
2.
the activity of the HOLD and HOLDA signals.
The extended hold time is programmable in the EMIF and is only present when consecutive memory accesses are made to
3.
4.
5.
different CEx spaces, or are of different types (read/write).
All timings referenced to CLKOUT assume CLKOUT is the same frequency as the internal CPU clock (divide-by 1 mode).
The chip enable that becomes active depends on the address.
ARDY is synchronized internally. If the setup time shown is not met, ARDY will be recognized on the next clock cycle.
FIGURE 8. Timing waveforms.
DEFENSE SUPPLY CENTER, COLUMBUS
COLUMBUS, OHIO
SIZE
A
CODE IDENT NO.
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Notes:
1. The chip enable that becomes active depends on the address.
FIGURE 9. Timing waveforms.
DEFENSE SUPPLY CENTER, COLUMBUS
COLUMBUS, OHIO
SIZE
A
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Notes:
1. The chip enable that becomes active depends on the address.
2.
3.
All BE[3 : 0] signals are driven low (active) during reads. Byte manipulation of the read data is performed inside the EMIF.
These signals remain active until the next access that is not an SDRAM read occurs.
The number of address signals used depends on the SDRAM size and width.
FIGURE 10. Timing waveforms.
DEFENSE SUPPLY CENTER, COLUMBUS
COLUMBUS, OHIO
SIZE
A
CODE IDENT NO.
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Notes:
1. The chip enable that becomes active depends on the address.
2. The number of address signals used depends on the SDRAM size and width.
FIGURE 11. Timing waveforms.
DEFENSE SUPPLY CENTER, COLUMBUS
COLUMBUS, OHIO
SIZE
A
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Notes:
3. The chip enable that becomes active depends on the address.
4. The number of address signals used depends on the SDRAM size and width.
FIGURE 12. Timing waveforms.
DEFENSE SUPPLY CENTER, COLUMBUS
COLUMBUS, OHIO
SIZE
A
CODE IDENT NO.
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Notes:
1.
EMIF bus consists of CE[3 : 0] , BE[3 : 0] , D[31:0], A[21:0], ARE , AOE , AWE , SSADS , SSOE , SSWE , SDA10, SDRAS ,
SDCAS , SDWE , and CLKMEM.
FIGURE 13. Timing waveforms.
Notes:
1.
EMIF group: CE[3 : 0] , BE[3 : 0] , CLKMEM, ARE , AOE , AWE , SSADS , SSOE , SSWE , SDRAS , SDCAS , SDWE , and
SDA10.
2.
High group: HINT
3.
Low group: HOLDA
Z group: A[21:0], D[31:0], CLKR[2:0], CLKX[2:0], FSR[2:0], DX[2:0], IO[7:0], XF, and TIN/TOUT[1:0].
FIGURE 14. Timing waveforms.
DEFENSE SUPPLY CENTER, COLUMBUS
COLUMBUS, OHIO
SIZE
A
CODE IDENT NO.
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FIGURE 15. Timing waveforms.
FIGURE 16. Timing waveforms.
FIGURE 17. Timing waveforms.
DEFENSE SUPPLY CENTER, COLUMBUS
COLUMBUS, OHIO
SIZE
A
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FIGURE 18. Timing waveforms.
DEFENSE SUPPLY CENTER, COLUMBUS
COLUMBUS, OHIO
SIZE
A
CODE IDENT NO.
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FIGURE 19. Timing waveforms.
DEFENSE SUPPLY CENTER, COLUMBUS
COLUMBUS, OHIO
SIZE
A
CODE IDENT NO.
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Notes:
1. MGPIOx refers to CLKRx, FSRx, DRx, CLKXx, or FSXx when configured as a general purpose input.
2. MGPIOx refers to CLKRx, FSRx, CLKXx, FSXx, or DXx, when configured as a general purpose output.
FIGURE 20. Timing waveforms.
FIGURE 21. Timing waveforms.
DEFENSE SUPPLY CENTER, COLUMBUS
COLUMBUS, OHIO
SIZE
A
CODE IDENT NO.
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FIGURE 22. Timing waveforms.
DEFENSE SUPPLY CENTER, COLUMBUS
COLUMBUS, OHIO
SIZE
A
CODE IDENT NO.
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Notes:
1.
As of revision 2.1, the byte enable function on the EHPI (as controlled by pins HBE0 and HBE1 ) is no longer supported. These
pins must always be driven low either by an external device, by external pulldown resistors or by using the on-chip pulldown
circuitry controlled by the HPE bit in the System Register (SYSR).
2.
The falling edge of HCS must occur concurrent with or before the falling edge of HDS . The rising edge of HCS must occur
concurrent with or after the rising edge of HDS . If HDS1 and/or HDS2 are tied low and HCS is used as a strobe, the timing
requirements shown of HDS apply to HCS . Operation with HCS as a strobe is not recommended because HCS gates output
of HRDY (when HCS is high HRDY is not driven).
FIGURE 23. Timing waveforms.
DEFENSE SUPPLY CENTER, COLUMBUS
COLUMBUS, OHIO
SIZE
A
CODE IDENT NO.
16236
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DWG NO.
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Notes:
1.
As of revision 2.1, the byte enable function on the EHPI (as controlled by pins HBE0 and HBE1 ) is no longer supported. These
pins must always be driven low either by an external device, by external pulldown resistors or by using the on-chip pulldown
circuitry controlled by the HPE bit in the System Register (SYSR).
2.
The falling edge of HCS must occur concurrent with or before the falling edge of HDS . The rising edge of HCS must occur
concurrent with or after the rising edge of HDS . If HDS1 and/or HDS2 are tied low and HCS is used as a strobe, the timing
requirements shown of HDS apply to HCS . Operation with HCS as a strobe is not recommended because HCS gates output
of HRDY (when HCS is high HRDY is not driven).
FIGURE 24. Timing waveforms.
DEFENSE SUPPLY CENTER, COLUMBUS
COLUMBUS, OHIO
SIZE
A
CODE IDENT NO.
16236
REV
C
DWG NO.
V62/04605
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Notes:
1.
2.
3.
As of revision 2.1, the byte enable function on the EHPI (as controlled by pins HBE0 and HBE1 ) is no longer supported. These
pins must always be driven low either by an external device, by external pulldown resistors or by using the on-chip pulldown
circuitry controlled by the HPE bit in the System Register (SYSR).
During autoincrement mode, although the EHPI internally increments the memory address, reads of the HPIA register by the
host will always indicate the base address.
The falling edge of HCS must occur concurrent with or before the falling edge of HDS . The rising edge of HCS must occur
concurrent with or after the rising edge of HDS . If HDS1 and/or HDS2 are tied low and HCS is used as a strobe, the timing
requirements shown of HDS apply to HCS . Operation with HCS as a strobe is not recommended because HCS gates output
of HRDY (when HCS is high HRDY is not driven).
FIGURE 25. Timing waveforms.
DEFENSE SUPPLY CENTER, COLUMBUS
COLUMBUS, OHIO
SIZE
A
CODE IDENT NO.
16236
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DWG NO.
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Notes:
1.
2.
3.
As of revision 2.1, the byte enable function on the EHPI (as controlled by pins HBE0 and HBE1 ) is no longer supported. These
pins must always be driven low either by an external device, by external pulldown resistors or by using the on-chip pulldown
circuitry controlled by the HPE bit in the System Register (SYSR).
During autoincrement mode, although the EHPI internally increments the memory address, reads of the HPIA register by the
host will always indicate the base address.
The falling edge of HCS must occur concurrent with or before the falling edge of HDS . The rising edge of HCS must occur
concurrent with or after the rising edge of HDS . If HDS1 and/or HDS2 are tied low and HCS is used as a strobe, the timing
requirements shown of HDS apply to HCS . Operation with HCS as a strobe is not recommended because HCS gates output
of HRDY (when HCS is high HRDY is not driven).
FIGURE 26. Timing waveforms.
DEFENSE SUPPLY CENTER, COLUMBUS
COLUMBUS, OHIO
SIZE
A
CODE IDENT NO.
16236
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DWG NO.
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Notes:
1.
2.
3.
As of revision 2.1, the byte enable function on the EHPI (as controlled by pins HBE0 and HBE1 ) is no longer supported. These
pins must always be driven low either by an external device, by external pulldown resistors or by using the on-chip pulldown
circuitry controlled by the HPE bit in the System Register (SYSR).
During autoincrement mode, although the EHPI internally increments the memory address, reads of the HPIA register by the
host will always indicate the base address.
The falling edge of HCS must occur concurrent with or before the falling edge of HDS . The rising edge of HCS must occur
concurrent with or after the rising edge of HDS . If HDS1 and/or HDS2 are tied low and HCS is used as a strobe, the timing
requirements shown of HDS apply to HCS . Operation with HCS as a strobe is not recommended because HCS gates output
of HRDY (when HCS is high HRDY is not driven).
FIGURE 27. Timing waveforms.
DEFENSE SUPPLY CENTER, COLUMBUS
COLUMBUS, OHIO
SIZE
A
CODE IDENT NO.
16236
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DWG NO.
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4. VERIFICATION
4.1 Product assurance requirements. The manufacturer is responsible for performing all inspection and test requirements as
indicated in their internal documentation. Such procedures should include proper handling of electrostatic sensitive devices,
classification, packaging, and labeling of moisture sensitive devices, as applicable.
5. PREPARATION FOR DELIVERY
5.1 Packaging. Preservation, packaging, labeling, and marking shall be in accordance with the manufacturer’s standard commercial
practices for electrostatic discharge sensitive devices.
6. NOTES
6.1 ESDS. Devices are electrostatic discharge sensitive and are classified as ESDS class 1 minimum.
6.2 Configuration control. The data contained herein is based on the salient characteristics of the device manufacturer’s data book.
The device manufacturer reserves the right to make changes without notice. This drawing will be modified as changes are provided.
6.3 Suggested source(s) of supply. Identification of the suggested source(s) of supply herein is not to be construed as a guarantee
of present or continued availability as a source of supply for the item.
1/
Vendor item drawing administrative
control number 1/
Device manufacturer
CAGE code
Vendor part number
V62/04605-01XA
01295
SM32VC5510AGGWA2EP
The vendor item drawing establishes an administrative control number for identifying the item on
the engineering documentation.
CAGE code
01295
DEFENSE SUPPLY CENTER, COLUMBUS
COLUMBUS, OHIO
Source of supply
Texas Instruments, Inc.
Semiconductor Group
8505 Forest Lane
P.O. Box 660199
Dallas, TX 75243
Point of contact: U.S. Highway 75 South
P.O. Box 84, M/S 853
Sherman, TX 75090-9493
SIZE
A
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DWG NO.
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