LT5571 - 620MHz – 1100MHz High Linearity Direct Quadrature Modulator

LT5571
620MHz – 1100MHz High
Linearity Direct Quadrature
Modulator
DESCRIPTION
FEATURES
■
■
■
■
■
■
■
■
■
■
■
Direct Conversion from Baseband to RF
High Output: –4.2dB Conversion Gain
High OIP3: 21.7dBm at 900MHz
Low Output Noise Floor at 20MHz Offset:
No RF: –159dBm/Hz
POUT = 4dBm: –153.3dBm/Hz
Low Carrier Leakage: –42dBm at 900MHz
High Image Rejection: –53dBc at 900MHz
3-Ch CDMA2000 ACPR: –70.4dBc at 900MHz
Integrated LO Buffer and LO Quadrature Phase
Generator
50Ω AC-Coupled Single-Ended LO and RF Ports
High Impedance DC Interface to Baseband Inputs
with 0.5V Common Mode Voltage
16-Lead QFN 4mm × 4mm Package
APPLICATIONS
■
■
■
■
■
RFID Interrogators
GSM, CDMA, CDMA2000 Transmitters
Point-to-Point Wireless Infrastructure Tx
Image Reject Up-Converters for Cellular Bands
Low-Noise Variable Phase-Shifter for 620MHz to
1100MHz Local Oscillator Signals
The LT®5571 is a direct I/Q modulator designed for high
performance wireless applications, including wireless
infrastructure. It allows direct modulation of an RF signal
using differential baseband I and Q signals. It supports
RFID, GSM, EDGE, CDMA, CDMA2000, and other systems.
It may also be configured as an image reject upconverting mixer by applying 90° phase-shifted signals to the I
and Q inputs. The high impedance I/Q baseband inputs
consist of voltage-to-current converters that in turn drive
double-balanced mixers. The outputs of these mixers are
summed and applied to an on-chip RF transformer, which
converts the differential mixer signals to a 50Ω singleended output. The four balanced I and Q baseband input
ports are intended for DC-coupling from a source with a
common-mode voltage at about 0.5V. The LO path consists
of an LO buffer with single-ended input, and precision
quadrature generators that produce the LO drive for the
mixers. The supply voltage range is 4.5V to 5.25V.
, LT, LTC and LTM are registered trademarks of Linear Technology Corporation.
All other trademarks are the property of their respective owners.
TYPICAL APPLICATION
CDMA2000 ACPR, AltCPR and Noise vs RF
Output Power at 900MHz for 1 and 3 Carriers
Direct Conversion Transmitter Application
–40
I-DAC
100nF
×2
RF = 620MHz
TO 1100MHz
LT5571
V-I
I-CH
PA
0°
EN
90°
Q-CH
Q-DAC
BALUN
–50
ACPR, AltCPR (dBc)
VCC
–60
3-CH AltCPR
1-CH
ACPR
–70
–130
–140
1-CH NOISE
–80
–150
1-CH AltCPR
3-CH NOISE
5571 TA01a
VCO/SYNTHESIZER
–120
3-CH ACPR
V-I
BASEBAND
GENERATOR
–110
DOWNLINK TEST
MODEL 64 DPCH
–90
–30
NOISE FLOOR AT 30MHz OFFSET (dBm/Hz)
5V
–160
–10
–5
0
–25
–20
–15
RF OUTPUT POWER PER CARRIER (dBm)
5571 TA01b
5571f
1
LT5571
ABSOLUTE MAXIMUM RATINGS
PACKAGE/ORDER INFORMATION
(Note 1)
VCC
GND
BBMI
BBPI
TOP VIEW
Supply Voltage .........................................................5.5V
Common-Mode Level of BBPI, BBMI and
BBPQ, BBMQ .......................................................0.6V
Operating Ambient Temperature
(Note 2) ............................................... –40°C to 85°C
Storage Temperature Range................... –65°C to 125°C
Voltage on any Pin
Not to Exceed...................... –500mV to VCC + 500mV
16 15 14 13
EN 1
12 GND
GND 2
11 RF
17
LO 3
10 GND
GND 4
6
7
8
BBMQ
GND
BBPQ
VCC
9
5
GND
UF PACKAGE
16-LEAD (4mm × 4mm) PLASTIC QFN
TJMAX = 125°C, θJA = 37°C/W
EXPOSED PAD (PIN 17) IS GND, MUST BE SOLDERED TO PCB
Note: The baseband input pins should not be left floating.
ORDER PART NUMBER
UF PART MARKING
LT5571EUF
5571
Order Options Tape and Reel: Add #TR
Lead Free: Add #PBF Lead Free Tape and Reel: Add #TRPBF
Lead Free Part Marking: http://www.linear.com/leadfree/
Consult LTC Marketing for parts specified with wider operating temperature ranges.
ELECTRICAL CHARACTERISTICS
VCC = 5V, EN = High, TA = 25°C, fLO = 900MHz, fRF = 902MHz,
PLO = 0dBm. BBPI, BBMI, BBPQ, BBMQ CM input voltage = 0.5VDC, Baseband Input Frequency = 2MHz, I & Q 90° shifted (upper
sideband selection). PRF(OUT) = –10dBm, unless otherwise noted. (Note 3)
SYMBOL
PARAMETER
CONDITIONS
fRF
RF Frequency Range
RF Frequency Range
–3dB Bandwidth
–1dB Bandwidth
S22, ON
RF Output Return Loss
EN = High (Note 6)
S22, OFF
RF Output Return Loss
EN = Low (Note 6)
NFloor
RF Output Noise Floor
No Input Signal (Note 8)
POUT = 4dBm (Note 9)
POUT = 4dBm (Note 10)
GV
Conversion Voltage Gain
20 • Log (VOUT, 50Ω/VIN, DIFF, I or Q)
MIN
TYP
MAX
UNITS
RF Output (RF)
0.62 to 1.1
0.65 to 1.04
GHz
GHz
12.7
dB
11.6
–159
–153.3
–152.9
dB
dBm/Hz
dBm/Hz
dBm/Hz
–4.2
dB
POUT
Absolute Output Power
1VP-P DIFF CW Signal, I and Q
–0.2
dBm
G3LO vs LO
3 • LO Conversion Gain Difference
(Note 17)
–25.5
dB
OP1dB
Output 1dB Compression
(Note 7)
8.1
dBm
OIP2
Output 2nd Order Intercept
(Notes 13, 14)
63.8
dBm
OIP3
Output 3rd Order Intercept
(Notes 13, 15)
21.7
dBm
IR
Image Rejection
(Note 16)
–53
dBc
LOFT
Carrier Leakage (LO Feedthrough)
EN = High, PLO = 0dBm (Note 16)
EN = Low, PLO = 0dBm (Note 16)
–42
–61
dBm
dBm
5571f
2
LT5571
ELECTRICAL CHARACTERISTICS
VCC = 5V, EN = High, TA = 25°C, fLO = 900MHz, fRF = 902MHz,
PLO = 0dBm. BBPI, BBMI, BBPQ, BBMQ CM input voltage = 0.5VDC, Baseband Input Frequency = 2MHz, I & Q 90° shifted (upper
sideband selection). PRF(OUT) = –10dBm, unless otherwise noted. (Note 3)
LO Input (LO)
fLO
LO Frequency Range
0.5 to 1.2
PLO
LO Input Power
S11, ON
LO Input Return Loss
EN = High (Note 6)
–10.9
dB
S11, OFF
LO Input Return Loss
EN = Low (Note 6)
–2.6
dB
NFLO
LO Input Referred Noise Figure
at 900MHz (Note 5)
14.3
dB
GLO
LO to RF Small Signal Gain
at 900MHz (Note 5)
18.5
dB
IIP3LO
LO Input 3rd Order Intercept
at 900MHz (Note 5)
–4.8
dBm
MHz
–10
0
GHz
5
dBm
Baseband Inputs (BBPI, BBMI, BBPQ, BBMQ)
BWBB
Baseband Bandwidth
–3dB Bandwidth
400
VCMBB
DC Common-Mode Voltage
Externally Applied (Note 4)
0.5
0.6
V
RIN
Differential Input Resistance
90
kΩ
IDC, IN
Baseband Static Input Current
(Note 4)
–24
µA
PLO-BB
Carrier Feedthrough on BB
No Baseband Signal (Note 4)
–42
dBm
IP1dB
Input 1dB Compression Point
Differential Peak-to-Peak (Note 7)
2.9
VP-P,DIFF
ΔGI/Q
I/Q Absolute Gain Imbalance
0.013
dB
ΔϕI/Q
I/Q Absolute Phase Imbalance
0.24
Deg
Power Supply (VCC)
VCC
Supply Voltage
4.5
5
5.25
V
ICC(ON)
Supply Current
EN = High
ICC(OFF)
Supply Current, Shutdown Mode
EN = 0V
97
120
mA
100
µA
tON
Turn-On Time
EN = Low to High (Note 11)
0.4
µs
tOFF
Turn-Off Time
EN = High to Low (Note 12)
1.4
µs
230
V
µA
Enable (EN), Low = Off, High = On
Enable
Shutdown
Input High Voltage
Input High Current
EN = High
EN = 5V
Input Low Voltage
EN = Low
Note 1: Stresses beyond those listed under Absolute Maximum Ratings
may cause permanent damage to the device. Exposure to any Absolute
Maximum Rating condition for extended periods may affect device
reliability and lifetime.
Note 2: Specifications over the –40°C to 85°C temperature range are
assured by design, characterization and correlation with statistical process
controls.
Note 3: Tests are performed as shown in the configuration of Figure 7.
Note 4: At each of the four baseband inputs BBPI, BBMI, BBPQ and BBMQ.
Note 5: V(BBPI) – V(BBMI) = 1VDC, V(BBPQ) – V(BBMQ) = 1VDC.
Note 6: Maximum value within –1dB bandwidth.
Note 7: An external coupling capacitor is used in the RF output line.
Note 8: At 20MHz offset from the LO signal frequency.
1
0.5
V
Note 9: At 20MHz offset from the CW signal frequency.
Note 10: At 5MHz offset from the CW signal frequency.
Note 11: RF power is within 10% of final value.
Note 12: RF power is at least 30dB lower than in the ON state.
Note 13: Baseband is driven by 2MHz and 2.1MHz tones. Drive level is set
in such a way that the two resulting RF tones are –10dBm each.
Note 14: IM2 measured at LO frequency + 4.1MHz
Note 15: IM3 measured at LO frequency + 1.9MHz and LO frequency +
2.2MHz.
Note 16: Amplitude average of the characterization data set without image
or LO feed-through nulling (unadjusted).
Note 17: The difference in conversion gain between the spurious signal at
f = 3 • LO – BB versus the conversion gain at the desired signal at f = LO +
BB for BB = 2MHz and LO = 900MHz.
5571f
3
LT5571
TYPICAL PERFORMANCE CHARACTERISTICS
VCC = 5V, EN = High, TA = 25°C, fLO = 900MHz,
fRF = 902MHz, PLO = 0dBm. BBPI, BBMI, BBPQ, BBMQ CM input voltage = 0.5VDC, Baseband Input Frequency fBB = 2MHz, I & Q 90°
shifted, without image or LO feedthrough nulling. fRF = fBB + fLO (upper sideband selection). PRF(OUT) = –10dBm (–10dBm/tone for 2tone measurements), unless otherwise noted. (Note 3)
RF Output Power vs LO Frequency
at 1VP-P Differential Baseband
Drive
Supply Current vs Supply Voltage
85°C
100
25°C
90
–40°C
–2
0
–4
–2
–6
–4
–6
5V, –40°C
5V, 25°C
5V, 85°C
4.5V, 25°C
5.5V, 25°C
–8
–10
4.75
5.00
SUPPLY VOLTAGE (V)
–12
550
5.25
75
fBB, 1 = 2MHz
fBB, 2 = 2.1MHz
5V, –40°C
5V, 25°C
5V, 85°C
4.5V, 25°C
5.5V, 25°C
16
14
12
550
60
55
45
550
–48
550
–2
550
650 750 850 950 1050 1150 1250
LO FREQUENCY (MHz)
2 • LO LEAKAGE (dBm)
650 750 850 950 1050 1150 1250
LO FREQUENCY (MHz)
3 • LO Leakage to RF Output vs
3 • LO Frequency
5571 G07
–45
5V, –40°C
5V, 25°C
5V, 85°C
4.5V, 25°C
5.5V, 25°C
–45
–50
–55
–60
1.1
650 750 850 950 1050 1150 1250
LO FREQUENCY (MHz)
5571 G06
–40
5V, –40°C
5V, 25°C
5V, 85°C
4.5V, 25°C
5.5V, 25°C
5V, –40°C
5V, 25°C
5V, 85°C
4.5V, 25°C
5.5V, 25°C
0
2 • LO Leakage to RF Output vs
2 • LO Frequency
–40
–44
4
5571 G05
LO Feedthrough to RF Output vs
LO Frequency
–42
6
2
5571 G04
–46
8
5V, –40°C
5V, 25°C
5V, 85°C
4.5V, 25°C
5.5V, 25°C
50
650 750 850 950 1050 1150 1250
LO FREQUENCY (MHz)
10
OP1dB (dBm)
65
OIP2 (dBm)
OIP3 (dBm)
22
LO FEEDTHROUGH (dBm)
Output 1dB Compression vs
LO Frequency
fIM2 = fBB, 1 + fBB, 2 + fLO
fBB, 1 = 2MHz
fBB, 2 = 2.1MHz
70
18
650 750 850 950 1050 1150 1250
LO FREQUENCY (MHz)
5558 G03
Output IP2 vs LO Frequency
20
5V, –40°C
5V, 25°C
5V, 85°C
4.5V, 25°C
5.5V, 25°C
–12
5571 G02
Output IP3 vs LO Frequency
24
–10
–16
550
650 750 850 950 1050 1150 1250
LO FREQUENCY (MHz)
5571 G01
26
–8
–14
–50
3 • LO LEAKAGE (dBm)
80
4.50
Voltage Gain vs LO Frequency
2
VOLTAGE GAIN (dB)
RF OUTPUT POWER (dBm)
SUPPLY CURRENT (mA)
110
5V, –40°C
5V, 25°C
5V, 85°C
4.5V, 25°C
5.5V, 25°C
–55
–60
–65
1.3
1.5 1.7 1.9 2.1 2.3
2 • LO FREQUENCY (GHz)
2.5
5571 G08
–70
1.65 1.95 2.25 2.55 2.85 3.15 3.5 3.75
3 • LO FREQUENCY (GHz)
5571 G09
5571f
4
LT5571
TYPICAL PERFORMANCE CHARACTERISTICS
VCC = 5V, EN = High, TA = 25°C, fLO = 900MHz,
fRF = 902MHz, PLO = 0dBm. BBPI, BBMI, BBPQ, BBMQ CM input voltage = 0.5VDC, Baseband Input Frequency fBB = 2MHz, I & Q 90°
shifted, without image or LO feedthrough nulling. fRF = fBB + fLO (upper sideband selection). PRF(OUT) = –10dBm (–10dBm/tone for 2tone measurements), unless otherwise noted. (Note 3)
Noise Floor vs RF Frequency
–157
–158
5V, –40°C
5V, 25°C
5V, 85°C
4.5V, 25°C
5.5V, 25°C
–35
–159
–160
5V, –40°C
5V, 25°C
5V, 85°C
4.5V, 25°C
5.5V, 25°C
–162
550
–40
–45
RF PORT,
EN = HIGH,
NO LO
–40
550
650 750 850 950 1050 1150 1250
LO FREQUENCY (MHz)
0
550
650 750 850 950 1050 1150 1250
FREQUENCY (MHz)
Voltage Gain vs LO Power
–2
3
5V, –40°C
5V, 25°C
5V, 85°C
4.5V, 25°C
5.5V, 25°C
2
1
–6
–8
–10
–12
–14
5V, –40°C
5V, 25°C
5V, 85°C
4.5V, 25°C
5.5V, 25°C
–16
–18
0
550
650 750 850 950 1050 1150 1250
LO FREQUENCY (MHz)
–4
VOLTAGE GAIN (dB)
ABSOLUTE I/Q PHASE IMBALANCE (DEG)
0.1
LO PORT,
EN = HIGH,
PLO = –10dBm
5571 G12
Absolute I/Q Phase Imbalance vs
LO Frequency
0.3
0.2
RF PORT,
EN = HIGH,
PLO = 0dBm
5571 G11
Absolute I/Q Gain Imbalance vs
LO Frequency
5V, –40°C
5V, 25°C
5V, 85°C
4.5V, 25°C
5.5V, 25°C
RF PORT,
EN = LOW
–20
–30
–55
550
650 750 850 950 1050 1150 1250
RF FREQUENCY (MHz)
LO PORT, EN = HIGH, PLO = 0dBm
–10
–50
5571 G10
ABSOLUTE I/Q GAIN IMBALANCE (dB)
LO PORT, EN = LOW
S11 (dB)
IMAGE REJECTION (dBc)
NOISE FLOOR (dBm/Hz)
0
–30
fLO = 900MHz (FIXED)
NO BASEBAND SIGNAL
–161
LO and RF Port Return Loss vs
Frequency
Image Rejection vs LO Frequency
–20
–20
650 750 850 950 1050 1150 1250
LO FREQUENCY (MHz)
–16 –12 –8
–4
0
4
LO INPUT POWER (dBm)
8
5571 G15
5571 G14
5571 G13
LO Feedthrough vs LO Power
22
–40
OIP3 (dBm)
20
18
16
14
12
10
–20
5V, –40°C
5V, 25°C
5V, 85°C
4.5V, 25°C
5.5V, 25°C
LO FEEDTHROUGH (dBm)
–38
4
–16 –12 –8
–4
0
LO INPUT POWER (dBm)
8
5571 G16
–40
–42
–44
–46
–48
fBB, 1 = 2MHz
fBB, 2 = 2.1MHz
Image Rejection vs LO Power
–35
–50
–20
5V, –40°C
5V, 25°C
5V, 85°C
4.5V, 25°C
5.5V, 25°C
–16 –12 –8
–4
0
4
LO INPUT POWER (dBm)
8
5571 G17
IMAGE REJECTION (dBc)
Output IP3 vs LO Power
24
–45
–50
–55
–60
–20
5V, –40°C
5V, 25°C
5V, 85°C
4.5V, 25°C
5.5V, 25°C
–16 –12 –8
–4
0
4
LO INPUT POWER (dBm)
8
5571 G18
5571f
5
LT5571
TYPICAL PERFORMANCE CHARACTERISTICS
VCC = 5V, EN = High, TA = 25°C, fLO = 900MHz,
fRF = 902MHz, PLO = 0dBm. BBPI, BBMI, BBPQ, BBMQ CM input voltage = 0.5VDC, Baseband Input Frequency fBB = 2MHz, I & Q 90°
shifted, without image or LO feedthrough nulling. fRF = fBB + fLO (upper sideband selection). PRF(OUT) = –10dBm (–10dBm/tone for 2tone measurements), unless otherwise noted. (Note 3)
RF CW Output Power, HD2 and
HD3 vs CW Baseband Voltage and
Temperature
20
0
–70
–80
0
1
–40
HD2 = MAX POWER AT
fLO + 2 • fBB OR fLO – 2 • fBB
–50
HD3 = MAX POWER AT
fLO + 3 • fBB OR fLO – 3 • fBB
–60
4
5
2
3
HD3
–40
–50
–60
–70
–80
–40
HD2 = MAX POWER AT
fLO + 2 • fBB OR fLO – 2 • fBB
–50
HD3 = MAX POWER AT
fLO + 3 • fBB OR fLO – 3 • fBB
–60
2
3
4
5
5571 G19
5571 G20
Image Rejection vs CW Baseband
Voltage
RF Two-Tone Power (Each Tone),
IM2 and IM3 vs Baseband Voltage
and Temperature
–50
–52
–54
–56
0
5
1
2
3
4
I AND Q BASEBAND VOLTAGE (VP-P,DIFF)
0
RF
–10
–20 IM2 = POWER AT
fLO + 4.1MHz
–30 IM3
= MAX POWER
AT fLO + 1.9MHz
–40
OR fLO + 2.2MHz
–50
IM3
IM2
–60
fBBI = 2MHz, 2.1MHz, 0°
fBBQ = 2MHz, 2.1MHz, 90°
–80
5
–20 IM2 = POWER AT
fLO + 4.1MHz
–30 IM3
= MAX POWER
AT fLO + 1.9MHz
–40
OR fLO + 2.2MHz
–50
IM3
IM2
–60
fBBI = 2MHz, 2.1MHz, 0°
fBBQ = 2MHz, 2.1MHz, 90°
–70
–80
1
10
0.1
I AND Q BASEBAND VOLTAGE (VP-P,DIFF, EACH TONE)
5571 G24
20
LO Leakage Distribution
20
–40°C
25°C
85°C
PERCENTAGE (%)
10
RF
–10
Noise Floor Distribution (no RF)
25
VBB = 400mVP-P
15
5V
5.5V
4.5V
5571 G23
PERCENTAGE (%)
PERCENTAGE (%)
20
RF Two-Tone Power (Each Tone),
IM2 and IM3 vs Baseband Voltage
and Supply Voltage
1
10
0.1
I AND Q BASEBAND VOLTAGE (VP-P,DIFF, EACH TONE)
Voltage Gain Distribution
–40°C
25°C
85°C
1
2
3
4
5
I AND Q BASEBAND VOLTAGE (VP-P, DIFF)
5571 G21
0
5571 G22
25
0
10
25°C
85°C
–40°C
–70
–58
–40
–45
PTONE (dBm), IM2, IM3 (dBc)
–48
10
PTONE (dBm), IM2, IM3 (dBc)
5V, –40°C
5V, 25°C
5V, 85°C
4.5V, 25°C
5.5V, 25°C
–35
I AND Q BASEBAND VOLTAGE (VP-P, DIFF)
–46
IMAGE REJECTION (dBc)
1
0
I AND Q BASEBAND VOLTAGE (VP-P, DIFF)
–30
HD2
LO FEEDTHROUGH (dBm)
–30
HD2, HD3 (dBc)
HD2
5V –10
5.5V
4.5V –20
–30
RF CW OUTPUT POWER (dBm)
25°C –10
85°C
–40°C –20
–40
–60
5V, –40°C
5V, 25°C
5V, 85°C
4.5V, 25°C
5.5V, 25°C
0
–20
RF CW OUTPUT POWER (dBm)
0
HD3
–50
–30
10
–10
10
–20
–30
LO Feedthrough to RF Output vs
CW Baseband Voltage
RF
RF
–10
HD2, HD3 (dBc)
RF CW Output Power, HD2 and
HD3 vs CW Baseband Voltage and
Supply Voltage
15
10
–40°C
25°C
85°C
VBB = 400mVP-P
10
5
0
–6.5 –6 –5.5 –5 –4.5 –4 –3.5 –3 –2.5 –2
5571 G25
GAIN (dB)
0
–159.9
–159.6 –159.3 –159.0
NOISE FLOOR (dBm/Hz)
–158.7
5571 G26
0
<–50 –48 –46 –44 –42 –40 –38 –36 –34
5571 G27
LO LEAKAGE (dBm)
5571f
6
LT5571
TYPICAL PERFORMANCE CHARACTERISTICS
VCC = 5V, EN = High, TA = 25°C, fLO = 900MHz,
fRF = 902MHz, PLO = 0dBm. BBPI, BBMI, BBPQ, BBMQ CM input voltage = 0.5VDC, Baseband Input Frequency fBB = 2MHz, I & Q 90°
shifted, without image or LO feedthrough nulling. fRF = fBB + fLO (upper sideband selection). PRF(OUT) = –10dBm (–10dBm/tone for 2tone measurements), unless otherwise noted. (Note 3)
LO Feedthrough and Image
Rejection vs Temperature After
Calibration at 25°C
Image Rejection Distribution
VBB = 400mVP-P
PERCENTAGE (%)
20
–40°C
25°C
85°C
15
10
5
0
<–60
–56
–52 –48 –44 –40
IMAGE REJECTION (dBc)
–36
5571 G28
–40
LO FEEDTHROUGH (dBm), IR (dB)
25
–50
CALIBRATED WITH PRF = 0dBm
fBBI = 2MHz, 0°
fBBQ = 2MHz, 90° + ϕCAL
LO FEEDTHROUGH
–60
–70
–80
IMAGE REJECTION
–90
–40
–20
0
20
40
TEMPERATURE (°C)
60
80
5571 G29
PIN FUNCTIONS
EN (Pin 1): Enable Input. When the Enable pin voltage is
higher than 1V, the IC is turned on. When the Enable voltage is less than 0.5V or if the pin is disconnected, the IC
is turned off. The voltage on the Enable pin should never
exceed VCC by more than 0.5V, in order to avoid possible
damage to the chip.
GND (Pins 2, 4, 6, 9, 10, 12, 15, 17): Ground. Pins 6, 9,
15 and the Exposed Pad 17 are connected to each other
internally. Pins 2 and 4 are connected to each other internally and function as the ground return for the LO signal.
Pins 10 and 12 are connected to each other internally and
function as the ground return for the on-chip RF balun. For
best RF performance, Pins 2, 4, 6, 9, 10, 12, 15 and the
Exposed Pad, Pin 17, should be connected to the printed
circuit board ground plane.
LO (Pin 3): LO Input. The LO input is an AC-coupled singleended input with approximately 50Ω input impedance at
RF frequencies. Externally applied DC voltage should be
within the range –0.5V to (VCC + 0.5V) in order to avoid
turning on ESD protection diodes.
BBPQ, BBMQ (Pins 7, 5): Baseband inputs for the Q-channel with about 90kΩ differential input impedance. These
pins should be externally biased at about 0.5V. Applied
common mode voltage must stay below 0.6V.
VCC (Pins 8, 13): Power Supply. Pins 8 and 13 are connected
to each other internally. 0.1µF capacitors are recommended
for decoupling to ground on each of these pins.
RF (Pin 11): RF Output. The RF output is an AC-coupled
single-ended output with approximately 50Ω output impedance at RF frequencies. Externally applied DC voltage
should be within the range –0.5V to (VCC + 0.5V) in order
to avoid turning on ESD protection diodes.
BBPI, BBMI (Pins 14, 16): Baseband inputs for the I-channel with about 90kΩ differential input impedance. These
pins should be externally biased at about 0.5V. Applied
common mode voltage must stay below 0.6V.
Exposed Pad (Pin 17): Ground. The Exposed Pad must
be soldered to the PCB.
5571f
7
LT5571
BLOCK DIAGRAM
VCC
8
13
BBPI 14
V-I
BBMI 16
11 RF
0°
90°
BALUN
BBPQ 7
1 EN
V-I
BBMQ 5
2
4
6
9
GND
3
10
LO
12
15
GND
17
5571 BD
APPLICATIONS INFORMATION
The LT5571 consists of I and Q input differential voltageto-current converters, I and Q up-conversion mixers, an RF
signal combiner/balun, an LO quadrature phase generator
and LO buffers.
External I and Q baseband signals are applied to the differential baseband input pins, BBPI, BBMI, and BBPQ,
BBMQ. These voltage signals are converted to currents and
translated to RF frequency by means of double-balanced
up-converting mixers. The mixer outputs are combined
in an RF output balun, which also transforms the output
impedance to 50Ω. The center frequency of the resulting
RF signal is equal to the LO signal frequency. The LO input
drives a phase shifter which splits the LO signal into inphase and quadrature LO signals. These LO signals are then
applied to on-chip buffers which drive the up-conversion
mixers. Both the LO input and RF output are single-ended,
50Ω-matched and AC-coupled.
Baseband Interface
The baseband inputs (BBPI, BBMI), (BBPQ, BBMQ) present
a differential input impedance of about 90kΩ. At each of
the four baseband inputs, a capacitor of 1.8pF to ground
and a PNP emitter follower is incorporated (see Figure 1),
which limits the baseband bandwidth to approximately
200MHz (–1dB point), if driven by a 50Ω source. The
circuit is optimized for a common mode voltage of 0.5V
which should be externally applied. The baseband input
pins should not be left floating because the internal PNP’s
base current will pull the common mode voltage higher
than the 0.6V limit. This condition may damage the part.
The PNP’s base current is about 24µA in normal operation. On the LT5571 demo board, external 50Ω resistors
to ground are added to each baseband input to prevent
this condition and to serve as a termination resistance for
the baseband connections.
It is recommended that the I/Q signals be DC-coupled to
the LT5571. An applied common mode voltage level at the
I and Q inputs of about 0.5V will maximize the LT5571’s
dynamic range. Some I/Q generators allow setting the
common mode voltage independently. For a 0.5V common mode voltage setting, the common-mode voltage of
those generators must be set to 0.5V to create the desired
0.5V bias, when an external 50Ω is present in the setup
(See Figure 2).
The part should be driven differentially; otherwise, the evenorder distortion products will degrade the overall linearity
severely. Typically, a DAC will be the signal source for the
LT5571. A reconstruction filter should be placed between
the DAC output and the LT5571’s baseband inputs.
In Figure 3 a typical baseband interface is shown, including a fifth-order low-pass ladder filter. For each baseband
pin, a 0 to 1V swing is developed corresponding to a DAC
output current of 0mA to 20mA. The maximum sinusoidal
single side-band RF output power is about +5.8dBm for
5571f
8
LT5571
APPLICATIONS INFORMATION
C
LT5571
RF
VCC = 5V
BALUN
FROM
Q-CHANNEL
LOMI
LOPI
BBPI
1.8pF
VCM = 0.5V
1.8pF
BBMI
5571 F01
GND
Figure 1. Simplified Circuit Schematic of the LT5571 (Only I-Half is Drawn)
50Ω
50Ω
0.5VDC
+
–
1VDC
LT5571
0.5005VDC
+
–
50Ω
1VDC
GENERATOR
GENERATOR
50Ω
EXTERNAL
LOAD
20µADC
5571 F02
Figure 2. DC Voltage Levels for a Generator Programmed at 0.5VDC for a 50Ω Load Without and with the LT5571 as a Load
C
LT5571
MAX RF
+5.8dBm
VCC
5V
BALUN
FROM
Q-CHANNEL
LOMI
L1A
0mA TO 20mA
L2A
0.5VDC
R1A
100Ω
R1B
100Ω
BBPI
R2A
100Ω
C2
C1
DAC
LOPI
L1B
L2B
20mA TO 0mA
C3
R2B
100Ω
1.8pF
1.8pF
0.5VDC BBMI
GND
5571 F03
GND
Figure 3. LT5571 Baseband Interface with 5th Order Filter and 0.5VCM DAC (Only I Channel is Shown)
5571f
9
LT5571
APPLICATIONS INFORMATION
Table 1. Typical Performance Characteristics vs VCM for fLO = 900MHz, PLO = 0dBm
VCM (V)
0.1
0.2
0.25
0.3
0.4
0.5
0.6
ICC (mA)
55.3
65.3
70.3
75.7
86.4
97.1
108.1
GV (dB)
–4.5
–3.9
–3.7
–3.6
–3.5
–3.6
–3.7
OP1dB (dBm)
–1.5
2.0
3.4
4.5
6.3
7.9
8.4
OIP2 (dBm)
53.4
51.7
51.9
52.1
53.1
53.0
53.7
full 0V to 1V swing on each baseband input (2VP-P,DIFF).
This maximum RF output level is limited by the 0.5VPEAK
maximum baseband swing possible for a 0.5VDC common-mode voltage level (assuming no negative supply
bias voltage is available).
It is possible to bias the LT5571 to a common mode
voltage level other than 0.5V. Table 1 shows the typical
performance for different common mode voltages.
LO Section
The internal LO input amplifier performs single-ended to
differential conversion of the LO input signal. Figure 4
shows the equivalent circuit schematic of the LO input.
The internal differential LO signal is split into in-phase and
quadrature (90° phase shifted) signals to drive LO buffer
sections. These buffers drive the double balanced I and
Q mixers. The phase relationship between the LO input
and the internal in-phase LO and quadrature LO signals
is fixed, and is independent of start-up conditions. The
phase shifters are designed to deliver accurate quadrature
signals for an LO frequency near 900MHz. For frequencies significantly below 750MHz or above 1100MHz, the
quadrature accuracy will diminish, causing the image
rejection to degrade. The LO pin input impedance is about
VCC
LO
INPUT
OIP3 (dBm)
9.2
11.2
13.3
15.6
18.7
20.6
22.1
NFloor (dBm/Hz)
–163.6
–161.8
–161.2
–160.5
–159.6
–158.7
–157.9
LOFT (dBm)
–53.6
–50.3
–49.0
–47.7
–45.3
–43.1
–41.2
IR (dBc)
37.0
40.4
43.5
43.9
45.1
45.4
45.6
50Ω, and the recommended LO input power window is
–2dBm to 2dBm. For PLO < –2dBm input power, the gain,
OIP2, OIP3, dynamic-range (in dBc/Hz) and image rejection
will degrade, especially at TA = 85°C.
Harmonics present on the LO signal can degrade the image
rejection, because they introduce a small excess phase shift
in the internal phase splitter. For the second (at 1.8GHz)
and third harmonics (at 2.7GHz) at –20dBc level, the introduced signal at the image frequency is about –61dBc
or lower, corresponding to an excess phase shift much
less than 1 degree. For the second and third harmonics at
–10dBc, still the introduced signal at the image frequency
is about –51dBc. Higher harmonics than the third will have
less impact. The LO return loss typically will be better than
11dB over the 750MHz to 1GHz range. Table 2 shows the
LO port input impedance vs frequency.
Table 2. LO Port Input Impedance vs Frequency for EN = High
and PLO = 0dBm
FREQUENCY
(MHz)
INPUT IMPEDANCE
(Ω)
500
600
700
800
900
1000
1100
1200
47.2 + j11.7
58.4 + j8.3
65.0 – j0.6
66.1 – j12.2
60.7 – j22.5
53.3 – j25.1
48.4 – j25.1
42.7 – j26.4
S11
Mag
0.123
0.108
0.131
0.173
0.221
0.239
0.248
0.285
Angle
97
40
–2
–31
–53
–69
–79
–89
20pF
ZIN ≈ 60Ω
5571 F04
Figure 4. Equivalent Circuit Schematic of the LO Input
The return loss S11 on the LO port can be improved at
lower frequencies by adding a shunt capacitor. The input
impedance of the LO port is different if the part is in
shut-down mode. The LO input impedance for EN = Low
is given in Table 3.
5571f
10
LT5571
APPLICATIONS INFORMATION
Table 3. LO Port Input Impedance vs Frequency for EN = Low
and PLO = 0dBm
FREQUENCY
(MHz)
500
600
700
800
900
1000
1100
1200
INPUT IMPEDANCE
(Ω)
35.6 + j42.1
65.5 + j70.1
163 + j76.3
188 – j95.2
72.9 – j114
34.3 – j83.5
21.6 – j63.3
16.4 – j50.5
S11
Mag
0.467
0.531
0.602
0.654
0.692
0.715
0.726
0.727
Angle
83
46
14
–13
–36
–56
–73
–86
RF Section
After up-conversion, the RF outputs of the I and Q mixers are
combined. An on-chip balun performs internal differential
to single-ended output conversion, while transforming the
output signal impedance to 50Ω. Table 4 shows the RF
port output impedance vs frequency.
Table 4. RF Port Output Impedance vs Frequency for EN = High
and PLO = 0dBm
FREQUENCY
(MHz)
OUTPUT IMPEDANCE
(Ω)
500
600
700
800
900
1000
1100
1200
22.2 + j5.2
28.4 + j11.7
38.8 + j14.3
49.4 + j6.8
49.4 – j5.8
42.7 – j11.7
36.9 – j12.6
33.2 – j11.3
S22
Mag
0.390
0.311
0.202
0.068
0.058
0.149
0.207
0.241
Angle
165
143
119
91
–92
–115
–128
–138
For EN = Low the S22 is given in Table 6.
Table 6. RF Port Output Impedance vs Frequency for EN = Low
FREQUENCY
(MHz)
OUTPUT IMPEDANCE
(Ω)
500
600
700
800
900
1000
1100
1200
21.5 + j5.0
26.9 + j11.8
36.5 + j16.0
48.8 + j11.2
52.8 – j2.2
46.6 – j11.5
39.7 – j13.9
35.0 – j13.0
S22
Mag
0.403
0.333
0.239
0.113
0.035
0.123
0.191
0.232
Angle
166
144
120
89
–38
–99
–117
–130
To improve S22 for lower frequencies, a series capacitor
can be added to the RF output. At higher frequencies, a
shunt inductor can improve the S22. Figure 5 shows the
equivalent circuit schematic of the RF output.
Note that an ESD diode is connected internally from the
RF output to ground. For strong output RF signal levels
(higher than 3dBm) this ESD diode can degrade the linearity performance if an external 50Ω termination impedance is connected directly to ground. To prevent this, a
coupling capacitor can be inserted in the RF output line.
This is strongly recommended during 1dB compression
measurements.
VCC
21pF
47Ω
1pF
RF
OUTPUT
7nH
5571 F05
The RF output S22 with no LO power applied is given in
Table 5.
Table 5. RF Port Output Impedance vs Frequency for EN = High
and No LO Power Applied
FREQUENCY
(MHz)
OUTPUT IMPEDANCE
(Ω)
500
600
700
800
900
1000
1100
1200
22.9 + j5.3
30.0 + j11.2
40.6 + j11.2
47.3 + j1.9
44.2 – j7.4
38.4 – j10.4
34.2 – j10.2
31.7 – j8.7
S22
Mag
0.377
0.283
0.160
0.034
0.099
0.175
0.221
0.246
Angle
165
143
123
145
–123
–131
–140
–148
Figure 5. Equivalent Circuit Schematic of the RF Output
Enable Interface
Figure 6 shows a simplified schematic of the EN pin interface. The voltage necessary to turn on the LT5571 is 1V.
To disable (shut down) the chip, the enable voltage must
be below 0.5V. If the EN pin is not connected, the chip is
disabled. This EN = Low condition is guaranteed by the
75kΩ on-chip pull-down resistor.
It is important that the voltage at the EN pin does not
exceed VCC by more than 0.5V. If this should occur, the
5571f
11
LT5571
APPLICATIONS INFORMATION
overheating. R1 (optional) limits the EN pin current in the
event that the EN pin is pulled high while the VCC inputs
are low. The application board PCB layouts are shown in
Figures 8 and 9.
VCC
EN
75k
25k
5571 F06
Figure 6. EN Pin Interface
full chip supply current could be sourced through the EN
pin ESD protection diodes, which are not designed for this
purpose. Damage to the chip may result.
Evaluation Board
Figure 7 shows the evaluation board schematic. A good
ground connection is required for the LT5571’s Exposed
Pad. If this is not done properly, the RF performance will
degrade. Additionally, the Exposed Pad provides heat sinking for the part and minimizes the possibility of the chip
J1
J2
BBIM
BBIP
R5
49.9Ω
R2
49.9Ω
16
R1
100Ω
VCC EN
LO IN
15
14
1
3
4
BBPI VCC
12
EN
GND
11
GND
RF
10
LT5571
LO
GND
9
GND
GND
17
GND
BBMQ GND BBPQ VCC
5
6
7
BBQM
R3
49.9Ω
J3
RF
OUT
8
C2
100nF
J5
Figure 8. Component Side of Evaluation Board
C1
100nF
13
BBMI GND
2
J4
VCC
J6
BBQP
R4
49.9Ω
5571 F07
BOARD NUMBER: DC944A
Figure 7. Evaluation Circuit Schematic
Figure 9. Bottom Side of Evaluation Board
5571f
12
LT5571
APPLICATIONS INFORMATION
Application Measurements
The LT5571 is recommended for base-station applications
using various modulation formats. Figure 10 shows a
typical application.
Figure 11 shows the ACPR performance for CDMA2000
using one and three channel modulation. Figures 12 and 13
illustrate the 1- and 3-channel CDMA2000 measurement.
To calculate ACPR, a correction is made for the spectrum
analyzer’s noise floor (Application Note 99).
If the output power is high, the ACPR will be limited by the
linearity performance of the part. If the output power is
low, the ACPR will be limited by the noise performance of
the part. In the middle, an optimum ACPR is obtained.
Because of the LT5571’s very high dynamic-range, the test
equipment can limit the accuracy of the ACPR measurement. Consult Design Note 375 or the factory for advice
on ACPR measurement if needed.
The ACPR performance is sensitive to the amplitude
mismatch of the BBIP and BBIM (or BBQP and BBQM)
input voltage. This is because a difference in AC voltage
amplitude will give rise to a difference in amplitude between
the even-order harmonic products generated in the internal
V-I converter. As a result, they will not cancel out entirely.
Therefore, it is important to keep the amplitudes at the BBIP
and BBIM (or BBQP and BBQM) as equal as possible.
LO feedthrough and image rejection performance may
be improved by means of a calibration procedure. LO
feedthrough is minimized by adjusting the differential DC
offsets at the I and the Q baseband inputs. Image rejection
can be improved by adjusting the amplitude and phase
difference between the I and the Q baseband inputs. The
LO feedthrough and Image Rejection can also change
as a function of the baseband drive level, as depicted in
Figure 14.
–40
16
V-I
I-CH
90°
7
Q-DAC
5
BASEBAND
GENERATOR
PA
0°
1
EN
11
Q-CH
–50
ACPR, AltCPR (dBc)
I-DAC
LT5571
BALUN
–90
–30
5571 F10
2, 4, 6, 9, 10, 12, 15, 17
3
VCO/SYNTHESIZER
–40
–70
CORRECTED
SPECTRUM
–100
–110
–120
–130
896.25
SPECTRUM ANALYSER NOISE FLOOR
897.75 899.25 900.75 902.25 903.75
RF FREQUENCY (MHz)
5571 F12
Figure 12. 1-Channel CDMA2000 Spectrum
–160
–10
–5
0
–25
–20
–15
RF OUTPUT POWER PER CARRIER (dBm)
–50
Figure 11. CDMA2000 ACPR, ALTCPR and Noise vs
RF Output Power at 900MHz for 1 and 3 Carriers
20
DOWNLINK
TEST MODEL
64 DPCH
0
–60
–70
–80
UNCORRECTED
SPECTRUM
–90
SPECTRUM
ANALYSER
NOISE
FLOOR
–100
–110
–120
–130
894
PRF
10
PRF, LOFT (dBm), IR (dBc)
–30
–60
–90
–150
1-CH AltCPR
5571 F11
DOWNLINK TEST
MODEL 64 DPCH
UNCORRECTED
SPECTRUM
–140
3-CH NOISE
–50
–80
–130
1-CH NOISE
–80
POWER IN 30kHz BW (dBm)
POWER IN 30kHz BW (dBm)
–40
1-CH
ACPR
3-CH AltCPR
–70
V-I
Figure 10. 620MHz to 1.1GHz Direct Conversion Transmitter Application
–30
–60
–120
3-CH ACPR
NOISE FLOOR AT 30MHz OFFSET (dBm/Hz)
5V
100nF
×2
RF = 620MHz
TO 1100MvHz
8, 13
VCC
14
–110
DOWNLINK TEST
MODEL 64 DPCH
–10
25°C
85°C
–40°C
–20
–30
IR
–50
–60
fBBI = 2MHz, 0°
VCC = 5V, fBBQ = 2MHz, 90°
EN = HIGH, fRF = fBB + fLO
fLO = 900MHz, PLO = 0dBm
–70
–80
CORRECTED SPECTRUM
–90
896
902
898
900
RF FREQUENCY (MHz)
904
906
5571 F13
Figure 13. 3-Channel CDMA2000 Spectrum
LO FT
–40
0
1
2
3
4
I AND Q BASEBAND VOLTAGE (VP-P,DIFF)
5
5571 F14
Figure 14. Image Rejection and LO FeedThrough vs Baseband Drive Voltage After
Calibration at 25°C
5571f
13
LT5571
APPLICATIONS INFORMATION
Example: RFID Application
Figure 15 shows the interface between a current drive DAC
and the LT5571 for RFID applications. The SSB-ASK mode
requires an I/Q modulator to generate the desired spectrum.
According to [1], the LT5571 is capable of meeting the
“Dense-Interrogator” requirements with reduced supply
current. A VCM = 0.25V was chosen in order to save 30mA
current, resulting in a modulator supply current of about
73mA. This is achieved by sourcing 5mADC average DAC
current into 50Ω resistors R1A and R1B. As anti-aliasing
filter, an RCRC filter was chosen using R1A, R1B, C1A, C1B,
R2A, R2B, C2A and C2B. This results in a second-order
passive low-pass filter with –3dB cutoff at 790kHz. This
filter cutoff is chosen high enough that it will not affect
the RFID baseband signals in the fastest mode (TARI =
6.25µs, see [1]) significantly, and at the same time achieving enough alias attenuation while using a 32MHz sampling
frequency. The resulting Alt80-CPR (the alias frequency at
897.875MHz falls outside the RF frequency range of Figure
16a) is –92dBc for TARI = 6.25µs. The SSB-ASK output
signal spectrum is plotted in Figure 16a, together with the
Dense-Interrogator Transmit mask [1] for TARI = 25µs. The
corresponding envelope representation is given in Figure
16b. The Alt1-CPR can be increased by using a higher VCM
at the cost of extra supply current or a lower baseband drive
at the cost of lower RF output power. The center frequency
of the channel is chosen at 865.9MHz (“channel 2”), while
the LO frequency is chosen at 865.875MHz.
C
LT5571
RF
VCC
5V
BALUN
FROM
Q-CHANNEL
LOMI
R2A
250Ω 0.25VDC BBPI
0.25VDC
0mA TO 10mA
R1A
50Ω
C1A
2.2nF
C2A
470pF
R1B
50Ω
C1B GND
2.2nF
C2B
470pF
DAC
10mA TO 0mA
0.25VDC
LOPI
1.8pF
1.8pF
R2B 0.25VDC BBMI
250Ω
5571 F15
GND
Figure 15. Recommended Baseband Interface for RFID Applications (Only I Channel is Drawn)
0.3
0.2
–20
RF OUTPUT VOLTAGE (V)
POWER IN 3kHz BW (dBm), MASK (dBch)
0
–10
–30
–40
–50
–60
–70
–80
0.1
0
–0.1
–0.2
–90
–100
865.4
–0.3
865.6
865.8
866.0 866.2
FREQUENCY (MHz)
866.4
0
50
100
150
TIME (µs)
200
250
5571 F16b
CH BANDWIDTH: 100kHz
CH SPACING: 100kHz
CH PWR: –4.85dBm
ACP UP: –33.74dBc
ACP LOW: –37.76dBc
ALT1 UP: –71.15dBc
ALT1 LOW: –64.52dBc
ALT2 UP: –72.80dBc
ALT2 LOW: –72.42dBc
5571 F16a
Figure 16a and 16b. RFID SSB-ASK Spectrum with Mask and Corresponding RF Envelope for TARI = 25µs
[1] EPC Radio Frequency Identity Protocols, Class-1 Generation-2 UHF RFID Protocol for
Communications at 860MHz – 960MHz, version 1.0.9.
5571f
14
LT5571
PACKAGE DESCRIPTION
UF Package
16-Lead Plastic QFN (4mm × 4mm)
(Reference LTC DWG # 05-08-1692)
0.72 ±0.05
4.35 ± 0.05
2.15 ± 0.05
2.90 ± 0.05 (4 SIDES)
PACKAGE OUTLINE
0.30 ±0.05
0.65 BSC
RECOMMENDED SOLDER PAD PITCH AND DIMENSIONS
BOTTOM VIEW—EXPOSED PAD
4.00 ± 0.10
(4 SIDES)
0.75 ± 0.05
R = 0.115
TYP
15
PIN 1 NOTCH R = 0.20 TYP
OR 0.35 × 45° CHAMFER
16
0.55 ± 0.20
PIN 1
TOP MARK
(NOTE 6)
1
2.15 ± 0.10
(4-SIDES)
2
(UF16) QFN 10-04
0.200 REF
0.00 – 0.05
0.30 ± 0.05
0.65 BSC
NOTE:
1. DRAWING CONFORMS TO JEDEC PACKAGE OUTLINE MO-220 VARIATION (WGGC)
2. DRAWING NOT TO SCALE
3. ALL DIMENSIONS ARE IN MILLIMETERS
4. DIMENSIONS OF EXPOSED PAD ON BOTTOM OF PACKAGE DO NOT INCLUDE
MOLD FLASH. MOLD FLASH, IF PRESENT, SHALL NOT EXCEED 0.15mm ON ANY SIDE
5. EXPOSED PAD SHALL BE SOLDER PLATED
6. SHADED AREA IS ONLY A REFERENCE FOR PIN 1 LOCATION
ON THE TOP AND BOTTOM OF PACKAGE
5571f
Information furnished by Linear Technology Corporation is believed to be accurate and reliable.
However, no responsibility is assumed for its use. Linear Technology Corporation makes no representation that the interconnection of its circuits as described herein will not infringe on existing patent rights.
15
LT5571
RELATED PARTS
PART NUMBER
Infrastructure
LT5514
DESCRIPTION
COMMENTS
Ultralow Distortion, IF Amplifier/ADC Driver
with Digitally Controlled Gain
LT5515
1.5GHz to 2.5GHz Direct Conversion Quadrature
Demodulator
LT5516
0.8GHz to 1.5GHz Direct Conversion Quadrature
Demodulator
LT5517
40MHz to 900MHz Quadrature Demodulator
LT5518
1.5GHz to 2.4GHz High Linearity Direct
Quadrature Modulator
LT5519
0.7GHz to 1.4GHz High Linearity Upconverting
Mixer
LT5520
1.3GHz to 2.3GHz High Linearity Upconverting
Mixer
LT5521
10MHz to 3700MHz High Linearity
Upconverting Mixer
LT5522
600MHz to 2.7GHz High Signal Level
Downconverting Mixer
LT5524
Low Power, Low Distortion ADC Driver with
Digitally Programmable Gain
LT5525
High Linearity, Low Power Downconverting
Mixer
LT5526
High Linearity, Low Power Downconverting
Mixer
LT5527
400MHz to 3.7GHz High Signal Level
Downconverting Mixer
LT5528
1.5GHz to 2.4GHz High Linearity Direct
Quadrature Modulator
LT5558
600MHz to 1100MHz High Linearity Direct
Quadrature Modulator
LT5560
Ultra-Low Power Active Mixer
LT5568
700MHz to 1050MHz High Linearity Direct
Quadrature Modulator
LT5572
1.5GHz to 2.5GHz High Linearity Direct
Quadrature Modulator
RF Power Detectors
LTC®5505
RF Power Detectors with >40dB Dynamic Range
LTC5507
100kHz to 1000MHz RF Power Detector
LTC5508
300MHz to 7GHz RF Power Detector
LTC5509
300MHz to 3GHz RF Power Detector
LTC5530
300MHz to 7GHz Precision RF Power Detector
LTC5531
300MHz to 7GHz Precision RF Power Detector
LTC5532
300MHz to 7GHz Precision RF Power Detector
LT5534
50MHz to 3GHz Log RF Power Detector with
60dB Dynamic Range
LTC5536
Precision 600MHz to 7GHz RF Power Detector
with Fast Comparator Output
LT5537
Wide Dynamic Range Log RF/IF Detector
850MHz Bandwidth, 47dBm OIP3 at 100MHz, 10.5dB to 33dB Gain Control Range
20dBm IIP3, Integrated LO Quadrature Generator
21.5dBm IIP3, Integrated LO Quadrature Generator
21dBm IIP3, Integrated LO Quadrature Generator
22.8dBm OIP3 at 2GHz, –158.2dBm/Hz Noise Floor, 50Ω Single-Ended RF and LO
Ports, 4-Channel W-CDMA ACPR = –64dBc at 2.14GHz
17.1dBm IIP3 at 1GHz, Integrated RF Output Transformer with 50Ω Matching,
Single-Ended LO and RF Ports Operation
15.9dBm IIP3 at 1.9GHz, Integrated RF Output Transformer with 50Ω Matching,
Single-Ended LO and RF Ports Operation
24.2dBm IIP3 at 1.95GHz, NF = 12.5dB, 3.15V to 5.25V Supply, Single-Ended LO
Port Operation
4.5V to 5.25V Supply, 25dBm IIP3 at 900MHz, NF = 12.5dB, 50Ω Single-Ended RF
and LO Ports
450MHz Bandwidth, 40dBm OIP3, 4.5dB to 27dB Gain Control
Single-Ended 50Ω RF and LO Ports, 17.6dBm IIP3 at 1900MHz, ICC = 28mA
3V to 5.3V Supply, 16.5dBm IIP3, 100kHz to 2GHz RF, NF = 11dB, ICC = 28mA,
–65dBm LO-RF Leakage
IIP3 = 23.5dBm and NF = 12.5dBm at 1900MHz, 4.5V to 5.25V Supply, ICC = 78mA,
Conversion Gain = 2dB.
21.8dBm OIP3 at 2GHz, –159.3dBm/Hz Noise Floor, 50Ω, 0.5VDC Baseband
Interface, 4-Channel W-CDMA ACPR = –66dBc at 2.14GHz
22.4dBm OIP3 at 900MHz, –158dBm/Hz Noise Floor, 3kΩ, 2.1VDC Baseband
Interface, 3-Ch CDMA2000 ACPR = –70.4dBc at 900MHz
10mA Supply Current, 10dBm IIP3, 10dB NF, Usable as Up- or Down-Converter.
22.9dBm OIP3 at 850MHz, –160.3dBm/Hz Noise Floor, 50Ω, 0.5VDC Baseband
Interface, 3-Ch CDMA2000 ACPR = –71.4dBc at 850MHz
21.6dBm OIP3 at 2GHz, –158.6dBm/Hz Noise Floor, High-Ohmic 0.5VDC Baseband
Interface, 4-Ch W-CDMA ACPR = –67.7dBc at 2.14GHz
300MHz to 3GHz, Temperature Compensated, 2.7V to 6V Supply
100kHz to 1GHz, Temperature Compensated, 2.7V to 6V Supply
44dB Dynamic Range, Temperature Compensated, SC70 Package
36dB Dynamic Range, Low Power Consumption, SC70 Package
Precision VOUT Offset Control, Shutdown, Adjustable Gain
Precision VOUT Offset Control, Shutdown, Adjustable Offset
Precision VOUT Offset Control, Adjustable Gain and Offset
±1dB Output Variation over Temperature, 38ns Response Time, Log Linear
Response
25ns Response Time, Comparator Reference Input, Latch Enable Input,
–26dBm to +12dBm Input Range
Low Frequency to 1GHz, 83dB Log Linear Dynamic Range
5571f
16 Linear Technology Corporation
LT 1206 • PRINTED IN USA
1630 McCarthy Blvd., Milpitas, CA 95035-7417
(408) 432-1900 ● FAX: (408) 434-0507
●
www.linear.com
© LINEAR TECHNOLOGY CORPORATION 2006