DISCRETE SEMICONDUCTORS DATA SHEET dbook, halfpage M3D049 BAS316 High-speed diode Product specification Supersedes data of 1998 Mar 26 2004 Feb 04 Philips Semiconductors Product specification High-speed diode BAS316 FEATURES PINNING • Very small plastic SMD package PIN • High switching speed: max. 4 ns 1 cathode • Continuous reverse voltage: max. 100 V 2 anode DESCRIPTION • Repetitive peak reverse voltage: max. 100 V • Repetitive peak forward current: max. 500 mA. APPLICATIONS handbook, halfpage k a • High-speed switching in e.g. surface mounted circuits. MAM157 DESCRIPTION The BAS316 is a high-speed switching diode fabricated in planar technology, and encapsulated in the SOD323 SMD plastic package. Marking code: A6. Cathode side indicated by a bar. Fig.1 Simplified outline (SOD323) and symbol. ORDERING INFORMATION TYPE NUMBER BAS316 PACKAGE NAME − DESCRIPTION VERSION plastic surface mounted package; 2 leads SOD323 LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 60134). SYMBOL PARAMETER VRRM repetitive peak reverse voltage VR continuous reverse voltage IF continuous forward current IFRM repetitive peak forward current IFSM non-repetitive peak forward current CONDITIONS MIN. − MAX. 100 UNIT V − 100 V − 250 mA − 500 mA t = 1 µs − 4 A t = 1 ms − 1 A t=1s − 0.5 A − 400 mW Ts = 90 °C; note 1; see Fig.2 square wave; Tj = 25 °C prior to surge; see Fig.4 Ts = 90 °C; note 1 Ptot total power dissipation Tstg storage temperature −65 +150 °C Tj junction temperature − 150 °C Note 1. Ts is the temperature at the soldering point of the cathode tab. 2004 Feb 04 2 Philips Semiconductors Product specification High-speed diode BAS316 CHARACTERISTICS Tj = 25 °C unless otherwise specified. SYMBOL VF IR PARAMETER forward voltage CONDITIONS MAX. UNIT see Fig.3 reverse current IF = 1 mA 715 mV IF = 10 mA 855 mV IF = 50 mA 1 V IF = 150 mA 1.25 V see Fig.5 VR = 25 V 30 nA VR = 75 V 1 µA VR = 25 V; Tj = 150 °C 30 µA VR = 75 V; Tj = 150 °C 50 µA Cd diode capacitance f = 1 MHz; VR = 0; see Fig.6 1.5 pF trr reverse recovery time when switched from IF = 10 mA to IR = 10 mA; RL = 100 Ω; measured at IR = 1 mA; see Fig.7 4 ns Vfr forward recovery voltage when switched from IF = 10 mA; tr = 20 ns; see Fig.8 1.75 V THERMAL CHARACTERISTICS SYMBOL Rth(j-s) PARAMETER CONDITIONS thermal resistance from junction to soldering point Note 1. Soldering point of the cathode tab. 2004 Feb 04 3 note 1 VALUE UNIT 150 K/W Philips Semiconductors Product specification High-speed diode BAS316 GRAPHICAL DATA MGM762 500 IF (mA) MBG382 300 handbook, halfpage handbook, halfpage IF (mA) 400 (1) (2) (3) 200 300 200 100 100 0 0 50 100 150 0 200 0 1 Ts (oC) 2 VF (V) (1) Tj = 150 °C; typical values. (2) Tj = 25 °C; typical values. (3) Tj = 25 °C; maximum values. Fig.2 Maximum permissible continuous forward current as a function of soldering point temperature. Fig.3 Forward current as a function of forward voltage. MBG704 102 handbook, full pagewidth IFSM (A) 10 1 10−1 1 10 102 103 tp (µs) Based on square wave currents. Tj = 25 °C prior to surge. Fig.4 Maximum permissible non-repetitive peak forward current as a function of pulse duration. 2004 Feb 04 4 104 Philips Semiconductors Product specification High-speed diode BAS316 MGA884 105 Cd (pF) IR (nA) 10 V R = 75 V 4 max 103 10 MBG446 0.8 handbook, halfpage 0.6 75 V 0.4 25 V 2 0.2 typ typ 10 0 100 0 T j ( o C) 0 200 4 8 12 VR (V) 16 f = 1 MHz; Tj = 25 °C. Fig.5 Reverse current as a function of junction temperature. 2004 Feb 04 Fig.6 5 Diode capacitance as a function of reverse voltage; typical values. Philips Semiconductors Product specification High-speed diode BAS316 handbook, full pagewidth tr tp t D.U.T. 10% IF RS = 50 Ω IF SAMPLING OSCILLOSCOPE t rr t R i = 50 Ω V = VR I F x R S (1) 90% VR MGA881 input signal output signal (1) IR = 1 mA. Input signal: reverse pulse rise time tr = 0.6 ns; reverse voltage pulse duration tp = 100 ns; duty factor δ = 0.05; Oscilloscope: rise time tr = 0.35 ns. Fig.7 Reverse recovery voltage test circuit and waveforms. I 1 kΩ 450 Ω V I 90% R S = 50 Ω D.U.T. OSCILLOSCOPE V fr R i = 50 Ω 10% MGA882 tp input signal Input signal: forward pulse rise time tr = 20 ns; forward current pulse duration tp ≥ 100 ns; duty factor δ ≤ 0.005. Fig.8 Forward recovery voltage test circuit and waveforms. 2004 Feb 04 t t tr 6 output signal Philips Semiconductors Product specification High-speed diode BAS316 PACKAGE OUTLINE Plastic surface mounted package; 2 leads SOD323 A D E X v HD M A Q 1 2 bp A A1 (1) c Lp detail X 0 1 2 mm scale DIMENSIONS (mm are the original dimensions) UNIT A A1 max bp c D E HD Lp Q v mm 1.1 0.8 0.05 0.40 0.25 0.25 0.10 1.8 1.6 1.35 1.15 2.7 2.3 0.45 0.15 0.25 0.15 0.2 Note 1. The marking bar indicates the cathode OUTLINE VERSION SOD323 2004 Feb 04 REFERENCES IEC JEDEC JEITA SC-76 7 EUROPEAN PROJECTION ISSUE DATE 99-09-13 03-12-17 Philips Semiconductors Product specification High-speed diode BAS316 DATA SHEET STATUS LEVEL DATA SHEET STATUS(1) PRODUCT STATUS(2)(3) Development DEFINITION I Objective data II Preliminary data Qualification This data sheet contains data from the preliminary specification. Supplementary data will be published at a later date. Philips Semiconductors reserves the right to change the specification without notice, in order to improve the design and supply the best possible product. III Product data This data sheet contains data from the product specification. Philips Semiconductors reserves the right to make changes at any time in order to improve the design, manufacturing and supply. Relevant changes will be communicated via a Customer Product/Process Change Notification (CPCN). Production This data sheet contains data from the objective specification for product development. Philips Semiconductors reserves the right to change the specification in any manner without notice. Notes 1. Please consult the most recently issued data sheet before initiating or completing a design. 2. The product status of the device(s) described in this data sheet may have changed since this data sheet was published. The latest information is available on the Internet at URL http://www.semiconductors.philips.com. 3. For data sheets describing multiple type numbers, the highest-level product status determines the data sheet status. DEFINITIONS DISCLAIMERS Short-form specification The data in a short-form specification is extracted from a full data sheet with the same type number and title. For detailed information see the relevant data sheet or data handbook. Life support applications These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips Semiconductors customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips Semiconductors for any damages resulting from such application. Limiting values definition Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 60134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Right to make changes Philips Semiconductors reserves the right to make changes in the products including circuits, standard cells, and/or software described or contained herein in order to improve design and/or performance. When the product is in full production (status ‘Production’), relevant changes will be communicated via a Customer Product/Process Change Notification (CPCN). Philips Semiconductors assumes no responsibility or liability for the use of any of these products, conveys no licence or title under any patent, copyright, or mask work right to these products, and makes no representations or warranties that these products are free from patent, copyright, or mask work right infringement, unless otherwise specified. Application information Applications that are described herein for any of these products are for illustrative purposes only. Philips Semiconductors make no representation or warranty that such applications will be suitable for the specified use without further testing or modification. 2004 Feb 04 8 Philips Semiconductors – a worldwide company Contact information For additional information please visit http://www.semiconductors.philips.com. Fax: +31 40 27 24825 For sales offices addresses send e-mail to: [email protected]. SCA76 © Koninklijke Philips Electronics N.V. 2004 All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights. Printed in The Netherlands R76/04/pp9 Date of release: 2004 Feb 04 Document order number: 9397 750 12574