DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D088 BAW56 High-speed double diode Product specification Supersedes data of 1999 May 11 2003 Mar 25 Philips Semiconductors Product specification High-speed double diode BAW56 FEATURES DESCRIPTION • Small plastic SMD package The BAW56 consists of two high-speed switching diodes with common anodes, fabricated in planar technology, and encapsulated in a small SOT23 plastic SMD package. • High switching speed: max. 4 ns • Continuous reverse voltage: max. 75 V • Repetitive peak reverse voltage: max. 85 V PINNING PIN DESCRIPTION 1 cathode (k1) 2 cathode (k2) 3 common anode • Repetitive peak forward current: max. 450 mA. handbook, 4 columns APPLICATIONS 2 1 • High-speed switching in thick and thin-film circuits. 2 MARKING 1 3 TYPE NUMBER MARKING CODE(1) BAW56 A1* 3 Top view MAM206 Note 1. ∗ = p : Made in Hong Kong. ∗ = t : Made in Malaysia. ∗ = W : Made in China. 2003 Mar 25 Fig.1 Simplified outline (SOT23) and symbol. 2 Philips Semiconductors Product specification High-speed double diode BAW56 LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 60134). SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT Per diode VRRM repetitive peak reverse voltage VR continuous reverse voltage IF continuous forward current IFRM repetitive peak forward current IFSM non-repetitive peak forward current − 85 V − 75 V single diode loaded; note 1; see Fig.2 − 215 mA double diode loaded; note 1; see Fig.2 − 125 mA − 450 mA t = 1 µs − 4 A t = 1 ms − 1 A t=1s − 0.5 A − 250 mW square wave; Tj = 25 °C prior to surge; see Fig.4 Tamb = 25 °C; note 1 Ptot total power dissipation Tstg storage temperature −65 +150 °C Tj junction temperature − 150 °C Note 1. Device mounted on an FR4 printed-circuit board. ELECTRICAL CHARACTERISTICS Tj = 25 °C; unless otherwise specified. SYMBOL PARAMETER CONDITIONS MAX. UNIT Per diode VF IR forward voltage reverse current see Fig.3 IF = 1 mA 715 mV IF = 10 mA 855 mV IF = 50 mA 1 V IF = 150 mA 1.25 V VR = 25 V 30 nA VR = 75 V 1 µA VR = 25 V; Tj = 150 °C 30 µA VR = 75 V; Tj = 150 °C 50 µA see Fig.5 Cd diode capacitance f = 1 MHz; VR = 0; see Fig.6 2 pF trr reverse recovery time when switched from IF = 10 mA to 4 IR = 10 mA; RL = 100 Ω; measured at IR = 1 mA; see Fig.7 ns Vfr forward recovery voltage when switched from IF = 10 mA; tr = 20 ns; see Fig.8 V 2003 Mar 25 3 1.75 Philips Semiconductors Product specification High-speed double diode BAW56 THERMAL CHARACTERISTICS SYMBOL PARAMETER CONDITIONS Rth j-tp thermal resistance from junction to tie-point Rth j-a thermal resistance from junction to ambient VALUE UNIT 360 K/W 500 K/W note 1 Note 1. Device mounted on an FR4 printed-circuit board. GRAPHICAL DATA MBD033 300 MBG382 300 handbook, halfpage IF (mA) IF (mA) (1) 200 (2) (3) 200 single diode loaded double diode loaded 100 100 0 0 0 100 T amb ( oC) 200 Maximum permissible continuous forward current as a function of ambient temperature. 2003 Mar 25 1 VF (V) 2 (1) Tj = 150 °C; typical values. (2) Tj = 25 °C; typical values. (3) Tj = 25 °C; maximum values. Device mounted on an FR4 printed-circuit board. Fig.2 0 Fig.3 4 Forward current as a function of forward voltage. Philips Semiconductors Product specification High-speed double diode BAW56 MBG704 102 handbook, full pagewidth IFSM (A) 10 1 10−1 1 102 10 103 104 tp (µs) Based on square wave currents. Tj = 25 °C prior to surge. Fig.4 Maximum permissible non-repetitive peak forward current as a function of pulse duration. MGA884 105 IR (nA) 10 MBH191 2.5 Cd (pF) handbook, halfpage 2.0 V R = 75 V 4 1.5 10 max 3 75 V 1.0 10 25 V 2 0.5 typ typ 10 0 100 0 T j ( o C) 0 200 5 10 15 20 VR (V) 25 f = 1 MHz; Tj = 25 °C. Fig.5 Reverse current as a function of junction temperature. 2003 Mar 25 Fig.6 5 Diode capacitance as a function of reverse voltage; typical values. Philips Semiconductors Product specification High-speed double diode BAW56 handbook, full pagewidth tr tp t D.U.T. 10% IF RS = 50 Ω IF SAMPLING OSCILLOSCOPE t rr t R i = 50 Ω V = VR I F x R S MGA881 (1) 90% VR input signal output signal (1) IR = 1 mA. Fig.7 Reverse recovery voltage test circuit and waveforms. I 1 kΩ 450 Ω V I 90% R = 50 Ω S D.U.T. OSCILLOSCOPE V fr R i = 50 Ω 10% MGA882 t tr input signal Fig.8 Forward recovery voltage test circuit and waveforms. 2003 Mar 25 6 t tp output signal Philips Semiconductors Product specification High-speed double diode BAW56 PACKAGE OUTLINE Plastic surface mounted package; 3 leads SOT23 D E B A X HE v M A 3 Q A A1 1 2 e1 bp c w M B Lp e detail X 0 1 2 mm scale DIMENSIONS (mm are the original dimensions) UNIT A A1 max. bp c D E e e1 HE Lp Q v w mm 1.1 0.9 0.1 0.48 0.38 0.15 0.09 3.0 2.8 1.4 1.2 1.9 0.95 2.5 2.1 0.45 0.15 0.55 0.45 0.2 0.1 OUTLINE VERSION SOT23 2003 Mar 25 REFERENCES IEC JEDEC EIAJ EUROPEAN PROJECTION ISSUE DATE 97-02-28 99-09-13 TO-236AB 7 Philips Semiconductors Product specification High-speed double diode BAW56 DATA SHEET STATUS LEVEL DATA SHEET STATUS(1) PRODUCT STATUS(2)(3) Development DEFINITION I Objective data II Preliminary data Qualification This data sheet contains data from the preliminary specification. Supplementary data will be published at a later date. Philips Semiconductors reserves the right to change the specification without notice, in order to improve the design and supply the best possible product. III Product data This data sheet contains data from the product specification. Philips Semiconductors reserves the right to make changes at any time in order to improve the design, manufacturing and supply. Relevant changes will be communicated via a Customer Product/Process Change Notification (CPCN). Production This data sheet contains data from the objective specification for product development. Philips Semiconductors reserves the right to change the specification in any manner without notice. Notes 1. Please consult the most recently issued data sheet before initiating or completing a design. 2. The product status of the device(s) described in this data sheet may have changed since this data sheet was published. The latest information is available on the Internet at URL http://www.semiconductors.philips.com. 3. For data sheets describing multiple type numbers, the highest-level product status determines the data sheet status. DEFINITIONS DISCLAIMERS Short-form specification The data in a short-form specification is extracted from a full data sheet with the same type number and title. For detailed information see the relevant data sheet or data handbook. Life support applications These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips Semiconductors customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips Semiconductors for any damages resulting from such application. Limiting values definition Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 60134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Right to make changes Philips Semiconductors reserves the right to make changes in the products including circuits, standard cells, and/or software described or contained herein in order to improve design and/or performance. When the product is in full production (status ‘Production’), relevant changes will be communicated via a Customer Product/Process Change Notification (CPCN). Philips Semiconductors assumes no responsibility or liability for the use of any of these products, conveys no licence or title under any patent, copyright, or mask work right to these products, and makes no representations or warranties that these products are free from patent, copyright, or mask work right infringement, unless otherwise specified. Application information Applications that are described herein for any of these products are for illustrative purposes only. Philips Semiconductors make no representation or warranty that such applications will be suitable for the specified use without further testing or modification. 2003 Mar 25 8 Philips Semiconductors Product specification High-speed double diode BAW56 NOTES 2003 Mar 25 9 Philips Semiconductors Product specification High-speed double diode BAW56 NOTES 2003 Mar 25 10 Philips Semiconductors Product specification High-speed double diode BAW56 NOTES 2003 Mar 25 11 Philips Semiconductors – a worldwide company Contact information For additional information please visit http://www.semiconductors.philips.com. Fax: +31 40 27 24825 For sales offices addresses send e-mail to: [email protected]. SCA75 © Koninklijke Philips Electronics N.V. 2003 All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights. Printed in The Netherlands 613514/04/pp12 Date of release: 2003 Mar 25 Document order number: 9397 750 10966