DISCRETE SEMICONDUCTORS DATA SHEET M3D125 2N2906; 2N2906A PNP switching transistors Product specification Supersedes data of September 1994 File under Discrete Semiconductors, SC04 1997 Jun 02 Philips Semiconductors Product specification PNP switching transistors 2N2906; 2N2906A FEATURES PINNING • High current (max. 600 mA) PIN • Low voltage (max. 60 V). APPLICATIONS DESCRIPTION 1 emitter 2 base 3 collector, connected to case • High-speed switching • Driver applications for industrial service. 3 1 handbook, halfpage 2 DESCRIPTION 2 PNP switching transistor in a TO-18 metal package. NPN complements: 2N2222 and 2N2222A. 3 Fig.1 MAM263 1 Simplified outline (TO-18) and symbol. QUICK REFERENCE DATA SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT − −60 V 2N2906 − −40 V 2N2906A − −60 V VCBO collector-base voltage open emitter VCEO collector-emitter voltage open base IC collector current (DC) − −600 mA Ptot total power dissipation Tamb ≤ 25 °C − 400 mW hFE DC current gain IC = −150 mA; VCE = −10 V 40 120 fT transition frequency IC = −50 mA; VCE = −20 V; f = 100 MHz 200 − MHz toff turn-off time ICon = −150 mA; IBon = −15 mA; IBoff = 15 mA − 300 ns 1997 Jun 02 2 Philips Semiconductors Product specification PNP switching transistors 2N2906; 2N2906A LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT − −60 V 2N2906 − −40 V 2N2906A − −60 V − −5 V VCBO collector-base voltage open emitter VCEO collector-emitter voltage open base VEBO emitter-base voltage IC collector current (DC) − −600 mA ICM peak collector current − −800 mA IBM peak base current − −200 mA Ptot total power dissipation Tamb ≤ 25 °C − 400 mW Tcase ≤ 25 °C − 1.2 W Tstg storage temperature −65 +150 °C Tj junction temperature − 200 °C Tamb operating ambient temperature −65 +150 °C open collector THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-a thermal resistance from junction to ambient Rth j-c thermal resistance from junction to case 1997 Jun 02 CONDITIONS in free air 3 VALUE UNIT 438 K/W 146 K/W Philips Semiconductors Product specification PNP switching transistors 2N2906; 2N2906A CHARACTERISTICS Tamb = 25 °C unless otherwise specified SYMBOL ICBO PARAMETER MAX. UNIT IE = 0; VCB = −50 V − −20 nA IE = 0; VCB = −50 V; Tamb = 150 °C − −20 µA collector cut-off current 2N2906A IE = 0; VCB = −50 V − −10 nA IE = 0; VCB = −50 V; Tamb = 150 °C − −10 µA − −50 nA IC = −0.1 mA 20 − IC = −1 mA 25 − IC = −10 mA 35 − IC = −150 mA; note 1 40 120 IC = −500 mA; note 1 20 IEBO emitter cut-off current IC = 0; VEB = −5 V hFE DC current gain VCE = −10 V 2N2906 hFE MIN. collector cut-off current 2N2906 ICBO CONDITIONS DC current gain 2N2906A VCE = −10 V − IC = −0.1 mA 40 − IC = −1 mA 40 − IC = −10 mA 40 − IC = −150 mA; note 1 40 120 IC = −500 mA; note 1 40 − VCEsat collector-emitter saturation voltage IC = −150 mA; IB = −15 mA; note 1 −400 mV IC = −500 mA; IB = −50 mA; note 1 −1.6 V VBEsat base-emitter saturation voltage IC = −150 mA; IB = −15 mA; note 1 −1.3 V IC = −500 mA; IB = −50 mA; note 1 −2.6 V Cc collector capacitance IE = ie = 0; VCB = −10 V; f = 1 MHz − 8 pF Ce emitter capacitance IC = ic = 0; VEB = −2 V; f = 1 MHz − 30 pF fT transition frequency IC = −50 mA; VCE = −20 V; f = 100 MHz; note 1 200 − MHz ICon = −150 mA; IBon = −15 mA; IBoff = 15 mA − 45 ns Switching times (between 10% and 90% levels); see Fig.2 ton turn-on time td delay time − 15 ns tr rise time − 35 ns toff turn-off time − 300 ns ts storage time − 250 ns tf fall time − 50 ns Note 1. Pulse test: tp ≤ 300 µs; δ ≤ 0.02. 1997 Jun 02 4 Philips Semiconductors Product specification PNP switching transistors 2N2906; 2N2906A VBB handbook, full pagewidth RB VCC RC Vo (probe) oscilloscope 450 Ω (probe) 450 Ω R2 Vi DUT R1 MGD624 Vi = −9.5 V; T = 500 µs; tp = 10 µs; tr = tf ≤ 3 ns. R1 = 68 Ω; R2 = 325 Ω; RB = 325 Ω; RC = 160 Ω. VBB = 3.5 V; VCC = −29.5 V. Oscilloscope input impedance Zi = 50 Ω. Fig.2 Test circuit for switching times. 1997 Jun 02 5 oscilloscope Philips Semiconductors Product specification PNP switching transistors 2N2906; 2N2906A PACKAGE OUTLINE Metal-can cylindrical single-ended package; 3 leads SOT18/13 α j seating plane B w M A M B M 1 b k D1 2 3 a D A A 0 5 L 10 mm scale DIMENSIONS (millimetre dimensions are derived from the original inch dimensions) UNIT A a b D D1 j k L w α mm 5.31 4.74 2.54 0.47 0.41 5.45 5.30 4.70 4.55 1.03 0.94 1.1 0.9 15.0 12.7 0.40 45° REFERENCES OUTLINE VERSION IEC JEDEC SOT18/13 B11/C7 type 3 TO-18 1997 Jun 02 EIAJ EUROPEAN PROJECTION ISSUE DATE 97-04-18 6 Philips Semiconductors Product specification PNP switching transistors 2N2906; 2N2906A DEFINITIONS Data sheet status Objective specification This data sheet contains target or goal specifications for product development. Preliminary specification This data sheet contains preliminary data; supplementary data may be published later. Product specification This data sheet contains final product specifications. Limiting values Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. 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