PD - 91578B IRG4PH40K Short Circuit Rated UltraFast IGBT INSULATED GATE BIPOLAR TRANSISTOR Features C • High short circuit rating optimized for motor control, tsc =10µs, VCC = 720V , TJ = 125°C, VGE = 15V • Combines low conduction losses with high switching speed • Latest generation design provides tighter parameter distribution and higher efficiency than previous generations VCES = 1200V VCE(on) typ. = 2.74V G @VGE = 15V, IC = 15A E n-channel Benefits • As a Freewheeling Diode we recommend our HEXFREDTM ultrafast, ultrasoft recovery diodes for minimum EMI / Noise and switching losses in the Diode and IGBT • Latest generation 4 IGBT's offer highest power density motor controls possible • This part replaces the IRGPH40K and IRGPH40M devices TO-247AC Absolute Maximum Ratings Parameter VCES IC @ TC = 25°C IC @ TC = 100°C ICM ILM tsc VGE EARV PD @ T C = 25°C PD @ T C = 100°C TJ TSTG Collector-to-Emitter Voltage Continuous Collector Current Continuous Collector Current Pulsed Collector Current Q Clamped Inductive Load Current R Short Circuit Withstand Time Gate-to-Emitter Voltage Reverse Voltage Avalanche Energy S Maximum Power Dissipation Maximum Power Dissipation Operating Junction and Storage Temperature Range Soldering Temperature, for 10 sec. Mounting torque, 6-32 or M3 screw. Max. Units 1200 30 15 60 60 10 ±20 180 160 65 -55 to +150 V A µs V mJ W °C 300 (0.063 in. (1.6mm) from case) 10 lbf•in (1.1N•m) Thermal Resistance Parameter RθJC RθCS RθJA Wt www.irf.com Junction-to-Case Case-to-Sink, Flat, Greased Surface Junction-to-Ambient, typical socket mount Weight Typ. Max. ––– 0.24 ––– 6 (0.21) 0.77 ––– 40 ––– Units °C/W g (oz) 1 2/7/2000 IRG4PH40K Electrical Characteristics @ TJ = 25°C (unless otherwise specified) V(BR)CES V(BR)ECS ∆V(BR)CES/∆TJ VCE(ON) VGE(th) ∆VGE(th)/∆TJ gfe ICES IGES Parameter Min. Typ. Max. Units Conditions Collector-to-Emitter Breakdown Voltage 1200 — — V VGE = 0V, IC = 250µA Emitter-to-Collector Breakdown Voltage T 18 — — V VGE = 0V, IC = 1.0A Temperature Coeff. of Breakdown Voltage — 0.37 — V/°C VGE = 0V, IC = 1.0mA — 2.54 — IC = 10A — 2.74 3.4 IC = 15A VGE = 15V Collector-to-Emitter Saturation Voltage V — 3.29 — IC = 30A See Fig.2, 5 — 2.53 — IC = 15A , TJ = 150°C Gate Threshold Voltage 3.0 — 6.0 VCE = VGE, IC = 250µA Temperature Coeff. of Threshold Voltage — -3.3 — mV/°C VCE = VGE, IC = 250µA Forward Transconductance U 8.0 12 — S VCE = 100 V, IC = 15A — — 250 VGE = 0V, VCE = 1200V Zero Gate Voltage Collector Current — — 2.0 µA VGE = 0V, VCE = 10V, TJ = 25°C — — 3000 VGE = 0V, VCE = 1200V, TJ = 150°C Gate-to-Emitter Leakage Current — — ±100 nA VGE = ±20V Switching Characteristics @ TJ = 25°C (unless otherwise specified) Qg Qge Qgc td(on) tr td(off) tf Eon Eoff Ets tsc Parameter Total Gate Charge (turn-on) Gate - Emitter Charge (turn-on) Gate - Collector Charge (turn-on) Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-On Switching Loss Turn-Off Switching Loss Total Switching Loss Short Circuit Withstand Time td(on) tr td(off) tf Ets Eon Eoff Ets LE Cies Coes Cres Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Switching Loss Turn-On Switching Loss Turn-Off Switching Loss Total Switching Loss Internal Emitter Inductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Min. — — — — — — — — — — 10 — — — — — — — — — — — — Typ. Max. Units Conditions 94 140 IC = 15A 14 22 nC VCC = 400V See Fig.8 37 55 VGE = 15V 30 — 22 — TJ = 25°C ns 200 300 IC = 15A, VCC = 960V 150 230 VGE = 15V, RG = 10Ω 0.73 — Energy losses include "tail" 1.66 — mJ See Fig. 9,10,14 2.39 2.9 — — µs VCC = 720V, TJ = 125°C VGE = 15V, RG = 10Ω 29 — TJ = 150°C, 24 — IC = 15A, VCC = 960V ns 870 — VGE = 15V, RG = 10Ω 330 — Energy losses include "tail" 4.93 — mJ See Fig. 10,11,14 0.37 — TJ = 25°C, VGE = 15V, RG = 10Ω 0.89 — mJ IC = 10A, VCC = 960V 1.26 — Energy losses include "tail" 13 — nH Measured 5mm from package 1600 — VGE = 0V 77 — pF VCC = 30V See Fig. 7 26 — ƒ = 1.0MHz Details of note Q through U are on the last page 2 www.irf.com IRG4PH40K 50 F o r b o th : T ria n g u la r w a ve : D uty c yc le: 50% T J = 125° C T s ink = 90°C G ate drive as spec ified 40 I C la m p vo l ta g e : 8 0 % o f ra te d Load Current ( A ) P o w e r D is s ip a tio n = 3 5 W 30 S q u a re wave : 6 0 % o f ra te d v o lta g e 20 I 10 Id e al d io de s A 0 0.1 1 10 100 f, Frequency (kHz) Fig. 1 - Typical Load Current vs. Frequency (Load Current = IRMS of fundamental) I C , Collector-to-Emitter Current (A) TJ = 150 °C 10 TJ = 25 °C V = 15V 20µs PULSE WIDTH GE 1 1 10 VCE , Collector-to-Emitter Voltage (V) Fig. 2 - Typical Output Characteristics www.irf.com I C , Collector-to-Emitter Current (A) 100 100 TJ = 150 ° C 10 TJ = 25 °C V = 50V 5µs PULSE WIDTH CC 1 4 6 8 10 12 14 VGE, Gate-to-Emitter Voltage (V) Fig. 3 - Typical Transfer Characteristics 3 IRG4PH40K 4.0 V = 15V 80 us PULSE WIDTH GE VCE , Collector-to-Emitter Voltage(V) Maximum DC Collector Current(A) 30 25 20 15 10 5 0 25 50 75 100 125 150 IC = 30 A 3.5 3.0 IC = 15 A 2.5 IC = 7.5 A 2.0 -60 -40 -20 TC , Case Temperature ( °C) 0 20 40 60 80 100 120 140 160 TJ , Junction Temperature ( ° C) Fig. 4 - Maximum Collector Current vs. Case Temperature Fig. 5 - Typical Collector-to-Emitter Voltage vs. Junction Temperature Thermal Response (Z thJC ) 1 D = 0.50 0.20 0.1 0.10 P DM 0.05 t1 0.02 0.01 0.01 0.00001 t2 SINGLE PULSE (THERMAL RESPONSE) 0.0001 Notes: 1. Duty factor D = t 1 / t 2 2. Peak TJ = PDM x Z thJC + TC 0.001 0.01 0.1 1 t1 , Rectangular Pulse Duration (sec) Fig. 6 - Maximum Effective Transient Thermal Impedance, Junction-to-Case 4 www.irf.com IRG4PH40K VGE = 0V, f = 1MHz Cies = Cge + Cgc , Cce SHORTED Cres = Cgc Coes = Cce + Cgc C, Capacitance (pF) 2000 Cies 1500 1000 500 C oes C res 20 VGE , Gate-to-Emitter Voltage (V) 2500 0 1 10 12 8 4 0 100 0 100 Total Switching Losses (mJ) Total Switching Losses (mJ) 3.0 2.5 2.0 10 20 30 40 RGRG, Gate , GateResistance Resistance (Ohm) (Ω) Fig. 9 - Typical Switching Losses vs. Gate Resistance www.irf.com 40 60 80 100 Fig. 8 - Typical Gate Charge vs. Gate-to-Emitter Voltage V CC = 960V V GE = 15V TJ = 25 ° C I C = 15A 0 20 QG , Total Gate Charge (nC) Fig. 7 - Typical Capacitance vs. Collector-to-Emitter Voltage 3.5 VCC = 400V I C = 15A 16 VCE , Collector-to-Emitter Voltage (V) 4.0 50 RG = 10 Ohm Ω VGE = 15V VCC = 960V IC = 30 A 10 IC = 15 A IC = 7.5 A 1 0.1 -60 -40 -20 0 20 40 60 80 100 120 140 160 TJ , Junction Temperature ( °C ) Fig. 10 - Typical Switching Losses vs. Junction Temperature 5 IRG4PH40K RG TJ VCC 12 VGE 100 =10 Ohm Ω = 150 ° C = 960V = 15V I C , Collector-to-Emitter Current (A) Total Switching Losses (mJ) 15 9 6 3 VGE = 20V T J = 125 oC 10 SAFE OPERATING AREA 1 0 0 5 10 15 20 25 I C , Collector-to-emitter Current (A) Fig. 11 - Typical Switching Losses vs. Collector-to-Emitter Current 6 30 1 10 100 1000 10000 VCE , Collector-to-Emitter Voltage (V) Fig. 12 - Turn-Off SOA www.irf.com IRG4PH40K L D .U .T. VC * 50V RL = 0 - 960V 1 00 0V 960V 4 X I C@25°C 480µF 960V Q R * Driver s am e ty pe as D .U .T.; Vc = 80% of V ce (m ax ) * Note: D ue to the 50V pow er s upply, pulse w idth a nd inductor w ill inc rea se to obta in ra ted Id. Fig. 13a - Clamped Inductive Fig. 13b - Pulsed Collector Load Test Circuit Current Test Circuit IC L D river* D .U .T. VC Fig. 14a - Switching Loss Test Circuit 50V 1000V Q * Driver same type as D.U.T., VC = 960V R S Q R 90 % 10 % S VC 90 % Fig. 14b - Switching Loss t d (o ff) 1 0% IC 5% Waveforms tf tr t d (o n ) t=5µ s Eon E o ff E ts = (E o n +E o ff ) www.irf.com 7 IRG4PH40K Notes: Q Repetitive rating; VGE = 20V, pulse width limited by S Repetitive rating; pulse width limited by maximum R VCC = 80%(VCES), VGE = 20V, L = 10µH, RG = 10Ω, T Pulse width ≤ 80µs; duty factor ≤ 0.1%. max. junction temperature. ( See fig. 13b ) junction temperature. (See fig. 13a) U Pulse width 5.0µs, single shot. Case Outline and Dimensions — TO-247AC 3 .6 5 (.1 4 3 ) 3 .5 5 (.1 4 0 ) 0 .2 5 (.0 1 0 ) M D B M 1 5 .9 0 (.6 2 6 ) 1 5 .3 0 (.6 0 2 ) -B- -A5 .5 0 (.2 1 7) 2 0 .3 0 (.8 0 0 ) 1 9 .7 0 (.7 7 5 ) 2X 1 2 -D- 5 .3 0 ( .2 0 9 ) 4 .7 0 ( .1 8 5 ) 2 .5 0 (.0 8 9 ) 1 .5 0 (.0 5 9 ) 4 5 .5 0 (.2 17 ) 4 .5 0 (.1 77 ) LEAD 1234- 3 -C- * 1 4 .8 0 (.5 8 3 ) 1 4 .2 0 (.5 5 9 ) 2 .4 0 ( .0 9 4 ) 2 .0 0 ( .0 7 9 ) 2X 5 .4 5 (.2 1 5 ) 2X 4 .3 0 (.1 7 0 ) 3 .7 0 (.1 4 5 ) 3X 1 .4 0 (.0 5 6 ) 1 .0 0 (.0 3 9 ) 0 .2 5 (.0 1 0 ) M 3 .4 0 (.1 3 3 ) 3 .0 0 (.1 1 8 ) N O TE S : 1 D IM E N S IO N S & T O L E R A N C IN G P E R A N S I Y 14 .5 M , 1 9 8 2 . 2 C O N T R O L L IN G D IM E N S IO N : IN C H . 3 D IM E N S IO N S A R E S H O W N M ILL IM E T E R S (IN C H E S ). 4 C O N F O R M S T O JE D E C O U T L IN E T O -2 4 7 A C . * A S S IG N M E N T S GATE COLLE CTO R E M IT T E R COLLE CTO R L O N G E R L E A D E D (2 0m m ) V E R S IO N A V A IL A B LE (T O -24 7 A D ) T O O R D E R A D D "-E " S U F F IX T O P A R T N U M B ER 0 .8 0 (.0 3 1 ) 0 .4 0 (.0 1 6 ) 2 .6 0 ( .1 0 2 ) 2 .2 0 ( .0 8 7 ) 3X C A S CONFORMS TO JEDEC OUTLINE TO-247AC (TO-3P) D im e n s ion s in M illim e te rs a n d (In c h es ) IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 IR EUROPEAN REGIONAL CENTRE: 439/445 Godstone Rd, Whyteleafe, Surrey CR3 OBL, UK Tel: ++ 44 (0)20 8645 8000 IR CANADA: 15 Lincoln Court, Brampton, Ontario L6T3Z2, Tel: (905) 453 2200 IR GERMANY: Saalburgstrasse 157, 61350 Bad Homburg Tel: ++ 49 (0) 6172 96590 IR ITALY: Via Liguria 49, 10071 Borgaro, Torino Tel: ++ 39 011 451 0111 IR JAPAN: K&H Bldg., 2F, 30-4 Nishi-Ikebukuro 3-Chome, Toshima-Ku, Tokyo 171 Tel: 81 (0)3 3983 0086 IR SOUTHEAST ASIA: 1 Kim Seng Promenade, Great World City West Tower, 13-11, Singapore 237994 Tel: ++ 65 (0)838 4630 IR TAIWAN:16 Fl. Suite D. 207, Sec. 2, Tun Haw South Road, Taipei, 10673 Tel: 886-(0)2 2377 9936 Data and specifications subject to change without notice. 6/00 8 www.irf.com