RH1021-5 - Precision 5V Reference

RH1021-5
Precision 5V Reference
W W
U
W
U
ABSOLUTE
DESCRIPTIO
AXI U RATI GS
(Note 9)
The RH1021-5 is a precision 5V reference with ultralow
drift and noise, extremely good long term stability and
almost total immunity to input voltage variations. The
reference output will source and sink up to 10mA. Unique
circuit design makes the RH1021-5 the first IC reference
to offer ultralow drift without the use of high power onchip heaters.
The wafer lots are processed to Linear Technology’s inhouse Class S flow to yield circuits usable in stringent
military applications.
, LTC and LT are registered trademarks of Linear Technology Corporation.
All other trademarks are the property of their respective owners.
Input Voltage ........................................................... 40V
Input/Output Voltage Differential ............................. 35V
Output to Ground Voltage
(Sink Mode Current Limit) ....................................... 10V
Trim Pin-to-Ground Voltage
Positive ............................................... Equal to VOUT
Negative ........................................................... – 20V
Output Short-Circuit Duration
VIN = 35V ........................................................ 10 sec
VIN ≤ 20V ................................................... Indefinite
Operating Temperature Range .............. – 55°C to 125°C
Storage Temperature Range ................. – 65°C to 150°C
Lead Temperature (Soldering, 10 sec).................. 300°C
U U
BUR -I CIRCUITS
8
7
1
20V
20V
2
6
RH1021-5
–20V
5
3
4
1
10
2
9
3
8
4
7
5
6
–20V
U
W
U
PACKAGE/ORDER I FOR ATIO
ORDER PART
NUMBER
TOP VIEW
NC*
8
NC* 1
7 NC*
6 VOUT
VIN 2
5 TRIM
NC* 3
RH1021BMH-5
RH1021CMH-5
RH1021DMH-5
TOP VIEW
NC*
1
10
NC*
VIN
2
9
NC*
NC*
3
8
VOUT
GND
4
7
TRIM
NC
5
6
NC
ORDER PART
NUMBER
RH1021CMW-5
4
GND
H PACKAGE
8-LEAD TO-5 METAL CAN
* CONNECTED INTERNALLY.
DO NOT CONNECT EXTERNAL
CIRCUITRY TO THESE PINS.
W PACKAGE
10-LEAD CERPAC
* CONNECTED INTERNALLY.
DO NOT CONNECT EXTERNAL
CIRCUITRY TO THESE PINS.
1
RH1021-5
TABLE 1: ELECTRICAL CHARACTERISTICS
SYMBOL PARAMETER
CONDITIONS
VOUT
Output Voltage
TCVOUT
(Preirradiation) (Note 8)
TA = 25°C
TYP MAX
NOTES
MIN
RH1021CM-5
RH1021BM-5, DM-5
1
1
4.9975
4.95
Output Voltage
Temperature Coefficient
RH1021BM-5
RH1021CM-5, DM-5
2
2
∆VOUT
∆VIN
Line Regulation
7.2V ≤ VIN ≤ 10V
10V ≤ VIN ≤ 40V
3
3
12
6
∆VOUT
∆IOUT
Load Regulation
(Sourcing Current)
0 ≤ IOUT ≤ 10mA
3
Load Regulation
(Sinking Current)
0 ≤ IOUT ≤ 10mA
3
IS
5.0025
5.05
Supply Current
SUB- – 55°C ≤ TA ≤ 125°C SUBGROUP MIN TYP MAX
GROUP
1
1
UNITS
V
V
5
20
2,3
2,3
ppm/°C
ppm/°C
1
1
20
10
2,3
2,3
ppm/V
ppm/V
20
1
35
2,3
ppm/mA
100
1
150
2,3
ppm/mA
1.2
1
1.5
2,3
mA
3.5
4
0.1Hz ≤ f ≤ 10Hz
10Hz ≤ f ≤ 1kHz
4
4
3
Long Term Stability
of VOUT
∆T = 1000 Hrs
Noncumulative
5
15
ppm
Temperature Hysteresis
of VOUT
∆T = ±25°C
10
ppm
Output Voltage Noise
TABLE 1A: ELECTRICAL CHARACTERISTICS
10Krad(Si)
MIN MAX
(Postirradiation) (Note 6)
20Krad(Si) 50Krad(Si)
MIN MAX MIN MAX
100Krad(Si) 200Krad(Si)
MIN MAX MIN MAX
UNITS
4.9945 5.0055 4.993 5.007 4.991 5.009 4.9875 5.0125 4.984 5.016
4.95 5.05 4.945 5.055 4.942 5.058 4.94 5.06 4.935 5.065
V
V
SYMBOL PARAMETER
CONDITIONS
VOUT
Output Voltage
RH1021CM-5
RH1021BM-5, DM-5
1
1
TCVOUT
Output Voltage
Temperature Coefficient
RH1021BM-5
RH1021CM-5, DM-5
2
2
5
20
5
20
5
20
7
22
10
25
ppm/°C
ppm/°C
∆VOUT
∆VIN
Line Regulation
7.2V ≤ VIN ≤ 10V
10V ≤ VIN ≤ 40V
3
3
12
6
12
6
13.5
6
15
7
18
9
ppm/V
ppm/V
∆VOUT
∆IOUT
Load Regulation
(Sourcing Current)
0 ≤ IOUT ≤ 10mA
3,7
20
20
20
20
20
ppm/mA
Load Regulation
(Sinking Current)
0 ≤ IOUT ≤ 10mA
3
100
100
100
100
150
ppm/mA
1.2
1.2
1.2
1.2
1.2
mA
IS
2
Supply Current
NOTES
µVP-P
µVRMS
RH1021-5
TABLE 1A: ELECTRICAL CHARACTERISTICS
Note 1: Output voltage is measured immediately after turn-on. Changes
due to chip warm-up are typically less than 0.005%.
Note 2: Temperature coefficient is measured by dividing the change in
output voltage over the temperature range by the change in temperature.
Separate tests are done for hot and cold; TMIN to 25°C and 25°C to TMAX.
Incremental slope is also measured at 25°C.
Note 3: Line and load regulation are measured on a pulse basis. Output
changes due to die temperature change must be taken into account
separately. Package thermal resistance is 150°C/W for the TO-5 (H)
package and 170°C/W for the 10-lead flatpack (W) package.
Note 4: RMS noise is measured with a 2-pole highpass filter at 10Hz and a
2-pole lowpass filter at 1kHz. The resulting output is full wave rectified and
then integrated for a fixed period, making the final reading an average as
(Postirradiation) (Note 6)
opposed to RMS. Correction factors are used to convert from average to
RMS and to correct for the nonideal bandpass of the filters. Peak-to-peak
noise is measured with a single highpass filter at 0.1Hz and a 2-pole
lowpass filter at 10Hz. The unit is enclosed in a still-air environment to
eliminate thermocouple effects on the leads. Test time is 10 seconds.
Note 5: Consult factory for units with long term stability data.
Note 6: VIN = 10V, IOUT = 0, TA = 25°C, unless otherwise noted.
Note 7: IOUT(MAX) (Sourcing) is 5mA for exposures greater than 100Krad
(Si).
Note 8: VIN = 10V, IOUT = 0, unless otherwise noted.
Note 9: Absolute Maximum Ratings are those values beyond which the life
of a device may be impaired.
U W
TABLE 2: ELECTRICAL TEST REQUIRE E TS
MIL-STD-883 TEST REQUIREMENTS
SUBGROUP
Final Electrical Test Requirements (Method 5004)
1*,2,3,4
Group A Test Requirements (Method 5005)
1,2,3,4
Group B and D for Class S, and
Group C and D for Class B
End Point Electrical Parameters (Method 5005)
1,2,3
* PDA Applies to subgroup 1. See PDA Test Notes.
PDA Test Notes
The PDA is specified as 5% based on failures from group A, subgroup 1,
tests after cooldown as the final electrical test in accordance with method
5004 of MIL-STD-883. The verified failures of group A, subgroup 1, after
burn-in divided by the total number of devices submitted for burn-in in
that lot shall be used to determine the percent for the lot.
Linear Technology Corporation reserves the right to test to tighter limits
than those given.
TOTAL DOSE BIAS CIRCUIT
15V
VIN
0.1µF
GND
–15V
Information furnished by Linear Technology Corporation is believed to be accurate and reliable.
However, no responsibility is assumed for its use. Linear Technology Corporation makes no representation that the interconnection of its circuits as described herein will not infringe on existing patent rights.
3
RH1021-5
U W
TYPICAL PERFOR A CE CHARACTERISTICS
Load Regulation (Sinking)
Output Voltage
5.00
4.99
1
10
100
TOTAL DOSE Krad (Si)
VIN = 10V
0mA ≤ IOUT ≤ 10mA
80
60
50
40
14
12
10
NOTE 7
6
10
100
TOTAL DOSE Krad (Si)
1
1000
1
10
100
TOTAL DOSE Krad (Si)
RH1021-5 G03
Line Regulation
1000
RH1021-5 G05
Temperature Coefficient
10
TEMPERATURE COEFFICIENT (ppm/°C)
15
8
LINE REGULATION (ppm/V)
16
8
RH1021-5 G01
6
7.2V ≤ VIN ≤ 10V
4
2
0
–2
V IN = 10V
0mA ≤ IOUT ≤ 10mA
18
70
30
1000
20
LOAD REGULATION (ppm/mA)
LOAD REGULATION (ppm/mA)
V IN = 10V
IOUT = 0
OUTPUT VOLTAGE (V)
Load Regulation (Sourcing)
90
5.01
10V ≤ VIN ≤ 40V
1
10
100
TOTAL DOSE Krad (Si)
1000
RH1021-5 G02
VIN = 10V
10
5
0
–5
–10
–15
1
10
100
TOTAL DOSE Krad (Si)
1000
RH1021-5 G04
I.D. No. 66-10-0177 Rev. E 1007
4
Linear Technology Corporation
LT 1007 REV E • PRINTED IN USA
1630 McCarthy Blvd., Milpitas, CA 95035-7417
(408) 432-1900 ● FAX: (408) 434-0507
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www.linear.com
© LINEAR TECHNOLOGY CORPORATION 1990