RH1021-10 - Precision 10V Reference

RH1021-10
Precision 10V Reference
DESCRIPTION
ABSOLUTE MAXIMUM RATINGS
The RH1021-10 is a precision 10V reference with ultralow
drift and noise, extremely good long-term stability and
almost total immunity to input voltage variations. The
reference output will source and sink up to 10mA. This
reference can also be used as a shunt regulator (2-terminal
Zener). Unique circuit design makes the RH1021-10 the
first IC reference to offer ultralow drift without the use of
high power on-chip heaters.
Input Voltage.............................................................40V
Input/Output Voltage Differential ...............................35V
Output to Ground Voltage
(Shunt Mode Current Limit)..................................16V
Trim Pin to Ground Voltage
Positive ................................................ Equal to VOUT
Negative ..............................................................–20V
Output Short-Circuit Duration
VIN = 35V ......................................................... 10 sec
VIN ≤ 20V .................................................... Indefinite
Operating Temperature Range................ –55°C to 125°C
Storage Temperature Range................... –65°C to 150°C
Lead Temperature (Soldering, 10 sec) .................. 300°C
(Note 10)
The wafer lots are processed to Linear Technology’s inhouse Class S flow to yield circuits usable in stringentmilitary applications.
L, LT, LTC and LTM are registered trademarks of Linear Technology Corporation.
All other trademarks are the property of their respective owners.
BURN-IN CIRCUITS
8
7
1
20V
2
20V
6
RH1021-10
–20V
5
3
4
1
10
2
9
3
8
4
7
5
6
–20V
PACKAGE/ORDER INFORMATION
ORDER PART
NUMBER
TOP VIEW
NC*
8
NC* 1
7 NC*
6 VOUT
VIN 2
5 TRIM
NC* 3
4
GND
H PACKAGE
8-LEAD TO-5 METAL CAN
*CONNECTED INTERNALLY,
DO NOT CONNECT EXTERNAL
CIRCUITRY TO THESE PINS.
RH1021BMH-10
RH1021CMH-10
RH1021DMH-10
ORDER PART
NUMBER
TOP VIEW
NC*
1
10
NC*
VIN
2
9
NC*
NC*
3
8
VOUT
GND
4
7
TRIM
NC
5
6
NC
RH1021CMW-10
W PACKAGE
10-LEAD CERPAC
* CONNECTED INTERNALLY,
DO NOT CONNECT EXTERNAL
CIRCUITRY TO THESE PINS.
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RH1021-10
TABLE 1: ELECTRICAL CHARACTERISTICS
SYMBOL PARAMETER
CONDITIONS
NOTES
MIN
9.995
9.95
(Preirradiation) (Note 9)
–55°C ≤ TA ≤ 125°C SUBTA = 25°C
SUBTYP MAX GROUP MIN TYP
MAX GROUP
VOUT
Output Voltage
RH1021CM-10
RH1021BM-10, DM-10
1
1
10.005
10.05
TCVOUT
Output Voltage
Temperature Coefficient
RH1021BM-10
RH1021CM-10, DM-10
2
2
ΔVOUT
ΔVIN
Line Regulation
11.5V ≤ VIN ≤ 14.5V
14.5V ≤ VIN ≤ 40V
3
3
4
2
ΔVOUT
ΔIOUT
Load Regulation
(Sourcing Current)
0 ≤ IOUT ≤ 10mA
3
Load Regulation (Shunt Mode)
1.7mA ≤ IOUT ≤ 10mA
3, 4
1
1
UNITS
V
V
5
20
2, 3
2, 3
ppm/°C
ppm/°C
1
1
6
4
2, 3
2, 3
ppm/V
ppm/V
25
1
40
2, 3
ppm/mA
100
1
150
2, 3
ppm/mA
IS
Supply Current (Series Mode)
1.7
1
2.0
2, 3
mA
IMIN
Minimum Current (Shunt Mode) VIN is Open
1.5
1
1.7
2, 3
mA
6
4
Output Voltage Noise
Long-Term Stability of VOUT
0.1Hz ≤ f ≤ 10Hz
10Hz ≤ f ≤ 1kHz
5
5
6
ΔT = 1000 Hrs
Noncumulative
6
15
ppm
5
ppm
Temperature Hysteresis of VOUT ΔT = ±25°C
TABLE 1: ELECTRICAL CHARACTERISTICS
10Krad(Si)
SYMBOL PARAMETER
CONDITIONS
NOTES MIN
MAX
(Postirradiation) (Note 7)
20Krad(Si)
MIN
μVP-P
μVRMS
MAX
50Krad(Si)
MIN
MAX
100Krad(Si)
200Krad(Si)
MIN
MIN
MAX
MAX
9.992 10.008 9.99 10.01 9.987 10.013 9.985 10.015 9.98 10.02
9.95 10.05 9.945 10.055 9.942 10.06 9.938 10.06 9.935 10.065
UNITS
VOUT
Output Voltage
RH1021CM-10
RH1021BM-10, DM-10
1
1
V
V
TCVOUT
Output Voltage
Temperature
Coefficient
RH1021BM-10
RH1021CM-10, DM-10
2
2
5
20
5
20
5
20
7
22
10
25
ppm/°C
ppm/°C
ΔVOUT
ΔVIN
Line Regulation
11.5V ≤ VIN ≤ 14.5V
14.5V ≤ VIN ≤ 40V
3
3
4
2
4
2
4.5
2
5
2
6
3
ppm/V
ppm/V
ΔVOUT
ΔIOUT
Load Regulation
(Sourcing Current)
0 ≤ IOUT ≤ 10mA
3, 8
25
25
25
25
25
ppm/mA
Load Regulation
(Shunt Mode)
1.7mA ≤ IOUT ≤ 10mA
3, 4
100
100
100
100
150
ppm/mA
IMIN
Minimum Current
(Shunt Mode)
VIN is Open
1.5
1.5
1.5
1.5
1.5
mA
IS
Supply Current
(Series Mode)
1.7
1.7
1.7
1.7
1.7
mA
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RH1021-10
TABLE 1A: ELECTRICAL CHARACTERISTICS
Note 1: Output voltage is measured immediately after turn-on. Changes
due to chip warm-up are typically less than 0.005%.
Note 2: Temperature coefficient is measured by dividing the change
inoutput voltage over the temperature range by the change in temperature.
Separate tests are done for hot and cold; TMIN to 25°C and 25°C to TMAX.
Incremental slope is also measured at 25°C.
Note 3: Line and load regulation are measured on a pulse basis. Output
changes due to die temperature change must be taken into account
separately. Package thermal resistance is 150°C/W for the TO-5 (H)
package and 170°C/W for the 10-lead flatpack (W) package.
Note 4: Shunt mode regulation is measured with the input open. With
the input connected, shunt mode current can be reduced to 0mA. Load
regulation will remain the same.
Note 5: RMS noise is measured with a 2-pole highpass filter at 10Hz and
a 2-pole lowpass filter at 1kHz. The resulting output is full wave rectified
and then integrated for a fixed period, making the final reading an average
as opposed to RMS. Correction factors are used to convert from average
to RMS and to correct for the nonideal bandpass of the filters. Peak-topeak noise is measured with a single highpass filter at 0.1Hz and a 2-pole
lowpass filter at 10Hz. The unit is enclosed in a still-air environment to
eliminate thermocouple effects on the leads. Test time is 10 seconds.
Note 6: Consult factory for units with long term stability data.
Note 7: VIN = 15V, IOUT = 0, TA = 25°C, unless otherwise noted.
Note 8: IOUT(MAX) (Sourcing) is 5mA for exposures greater than
100Krad (Si).
Note 9: VIN = 15V, IOUT = 0, unless otherwise noted.
Note 10: Absolute Maximum Ratings are those values beyond which the
life of a device may be impaired.
TABLE 2: ELECTRICAL TEST REQUIREMENTS
MIL-STD-883 TEST REQUIREMENTS
PDA Test Notes
The PDA is specified as 5% based on failures from group A, subgroup 1,
tests after cooldown as the final electrical test in accordance with method
5004 of MIL-STD-883. The verified failures of group A, subgroup 1, after
burn-in divided by the total number of devices submitted for burn-in in
that lot shall be used to determine the percent for the lot.
Linear Technology Corporation reserves the right to test to tighter limits
than those given.
SUBGROUP
Final Electrical Test Requirements (Method 5004)
1*, 2, 3, 4
Group A Test Requirements (Method 5005)
1, 2, 3, 4
Group B and D for Class S and
Group C and D for Class B
End Point Electrical Parameters (Method 5005)
1, 2, 3
*PDA Applies to subgroup 1. See PDA Test Notes.
TOTAL DOSE BIAS CIRCUIT
15V
VIN
0.1μF
GND
–15V
rh102110fe
Information furnished by Linear Technology Corporation is believed to be accurate and reliable.
However, no responsibility is assumed for its use. Linear Technology Corporation makes no representation that the interconnection of its circuits as described herein will not infringe on existing patent rights.
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RH1021-10
TYPICAL PERFORMANCE CHARACTERISTICS
Load Regulation (Shunt Mode)
Output Voltage
10.01
60
10.00
9.99
1
10
100
TOTAL DOSE Krad (Si)
40
30
20
10
0
1000
VIN = OPEN
1.2mA ≤ IOUT ≤ 10mA
50
Line Regulation
10
100
TOTAL DOSE Krad (Si)
8
NOTE 8
1
1000
10
100
TOTAL DOSE Krad (Si)
11.5V ≤ VIN ≤ 14.5V
–1.0
–1.5
Minimum Current (Shunt Mode)
1.2
VIN = 15V
VIN = OPEN
10
1.1
5
0
–5
1.0
0.9
0.8
0.7
–10
–15
1000
1000
RH1021-10 G03
MINIMUM CURRENT (mA)
TEMPERATURE COEFFICIENT (ppm/°C)
14.5V ≤ VIN ≤ 40V
10
100
TOTAL DOSE Krad (Si)
10
Temperature Coefficient
0.5
1
12
4
1
15
–0.5
14
RH1021-10 G02
1.0
0
VIN = 15V
0mA ≤ IOUT ≤ 10mA
16
6
RH1021-10 G01
LINE REGULATION (ppm/V)
LOAD REGULATION (ppm/mA)
LOAD REGULATION (ppm/mA)
OUTPUT VOLTAGE (V)
VIN = 15V
IOUT = 0
–2.0
Load Regulation (Sourcing)
18
1
RH1021-10 G04
10
100
TOTAL DOSE Krad (Si)
1000
RH1021-10 G05
0.6
1
10
100
TOTAL DOSE Krad (Si)
1000
RH1021-10 G06
I.D. No. 66-10-0179 Rev. E 0508
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Linear Technology Corporation
LT 0508 REV E • PRINTED IN USA
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