RH1014M Quad Precision Operational Amplifier U W W W U DESCRIPTIO ABSOLUTE The RH1014M is the first precision quad operational amplifier which directly upgrades designs in the industry standard 8-pin DIP LM124/LM148/OP-11/5156 pin configuration. Low offset voltage (300µV max), low drift (≤2.5µV/°C), low offset current (≤1.5nA), and high gain (1.2 million min) combine to make the RH1014M four truly precision amplifers in one package. Supply Voltage ..................................................... ±22V Differential Input Voltage ...................................... ±30V Input Voltage .............. Equal to Positive Supply Voltage ................................ 5V Below Negative Supply Voltage Output Short-Circuit Duration ......................... Indefinite Operating Temperature Range .............. – 55°C to 125°C Storage Temperature Range ................. – 65°C to 150°C Lead Temperature (Soldering, 10 sec).................. 300°C The wafer lots are processed to Linear Technology’s inhouse Class S flow to yield circuits usable in stringent military applications. AXI U RATI GS , LTC and LT are registered trademarks of Linear Technology Corporation. PACKAGE INFORMATION BURN-IN CIRCUIT TOP VIEW 50k 20V 100Ω RH1014M OUT A 1 14 OUT D –IN A 2 13 –IN D +IN A 3 12 +IN D V+ 4 11 V – +IN B 5 10 +IN C –IN B 6 9 –IN C OUT B 7 8 OUT C J PACKAGE 14-LEAD CERAMIC DIP 50k –20V RH1014M BI TOP VIEW OUT A 1 14 OUT D –IN A 2 13 –IN D +IN A 3 12 +IN D V+ 4 11 V– +IN B 5 10 +IN C –IN B 6 9 –IN C OUT B 7 8 OUT C W PACKAGE 14-LEAD FLATPAK GLASS SEALED 1 RH1014M TABLE 1: ELECTRICAL CHARACTERISTICS (Pre-Irradiation) VS = ±15V, VCM = 0V, unless otherwise noted. SYMBOL PARAMETER VOS CONDITIONS NOTES MIN TA = 25°C TYP MAX 300 1 550 2,3 µV 1 750 3 µV 2 750 2 µV 1 2.5 2 ∆VOS ∆Temp Average Tempco of Offset Voltage ∆VOS ∆Time Long Term VOS Stability IOS Input Offset Current IB en µV/°C µV/Mo 0.5 10 1 20 2,3 nA 2 10 1 20 2,3 nA 30 1 45 2,3 nA 2 50 1 120 2,3 nA Input Bias Current Input Noise Voltage UNITS 450 Input Offset Voltage VCM = 0.1V, TA = 125°C SUB- – 55°C ≤ TA ≤ 125°C SUBGROUP MIN TYP MAX GROUP 0.1Hz to 10Hz µVP-P 0.55 Input Noise Voltage f O = 10Hz 24 nV/√Hz Density f O = 1000Hz 22 nV/√Hz in Input Noise Current Density f O = 10Hz 0.07 pA/√Hz RIN Input Resistance Differential 1 70 Common Mode AVOL Large-Signal Voltage Gain 4 VO = ±10V, RL ≥ 2k 1.2 4 0.5 4 Input Voltage Range 2 13.5 V –15.0 V 3.5 V 0 V Ratio VCM = 13V, –14.9V Power Supply Rejection Ratio VS = ±2V to ±18V 100 1 Channel Separation VO = ±10V, RL = 2k 120 1 Slew Rate IS Supply Current 97 RL ≥ 2k 1 ±12.5 4 dB 94 2,3 dB 97 2,3 dB dB ±11.5 5,6 V Output Low, No Load 2 25 4 Output Low, 600Ω to GND 2 10 4 Output Low, ISINK = 1mA 2 350 4 mV Output High, No Load 2 4.0 4 V Output High, 600Ω to GND 2 3.4 4 0.2 Per Amplifier 2 2 V/µV VCM = 13.5V, –15V SR V/µV V/µV 1 Common-Mode Rejection Output Voltage Swing 5,6 1 1,2 VOUT 0.25 1 1,2 PSRR GΩ VO = ±10V, RL ≥ 600Ω VO = 5mV to 4V, RL = 500Ω CMRR MΩ mV 18 3.1 5,6 5,6 4 mV V V/µs 0.55 1 0.70 2,3 mA 0.50 1 0.65 2,3 mA RH1014M TABLE 1A: ELECTRICAL CHARACTERISTICS (Post-Irradiation) VS = ±15V, VCM = 0V, TA = 25°C, unless otherwise noted. SYMBOL PARAMETER VOS CONDITIONS 10KRAD(Si) 20KRAD(Si) 50KRAD(Si) NOTES MIN MAX MIN MAX MIN MAX Input Offset Voltage 2 IOS Input Offset Current IB Input Bias Current 2 2 Input Voltage Range 100KRAD(Si) MIN MAX 450 450 600 750 600 600 750 900 10 10 15 20 10 10 15 20 60 75 100 175 80 100 125 200 200KRAD(Si) MIN MAX UNITS 900 µV µV 25 nA 250 nA nA nA 1 13.5 13.5 13.5 13.5 13.5 V 1 –15.0 –15.0 – 15.0 –15.0 –15.0 V 2 3.5 3.5 3.5 3.5 2 V 0 0 0 0 CMRR Common-Mode Rejection Ratio VCM = 13V, – 15V 97 97 94 90 86 dB PSRR Power Supply Rejection Ratio VS = ±10V to ±18V 100 98 94 86 80 dB AVOL Large-Signal Voltage Gain RL ≥ 10k, VO = ±10V 500 200 100 50 25 V/mV VOUT Maximum Output Voltage RL ≥ 10k Swing Output Low, No Load 2 25 30 40 50 mV Output Low, 600Ω to GND 2 10 10 10 10 mV ±12.5 ±12.5 V 2 2 4.0 4.0 4.0 4.0 V Output High, 600Ω to GND 2 3.4 3.2 3.0 2.8 V Slew Rate RL ≥ 10k Supply Current Per Amplifier 0.13 2 Note 1: Guaranteed by design, characterization, or correlation to other tested parameters. 0.12 1.0 ±12.5 Output High, No Load IS 0.8 ±12.5 Output Low, ISINK = 1mA SR 0.6 ±12.5 V 0.11 1.6 0.07 V 0.01 0.55 0.55 0.55 0.55 0.50 0.50 0.50 0.50 V/µs 0.55 mA mA Note 2: Specification applies for VS+ = 5V, VS– = 0V, VCM = 0V, VOUT = 1.4V. 3 RH1014M U W TABLE 2: ELECTRICAL TEST REQUIRE E TS MIL-STD-883 TEST REQUIREMENTS SUBGROUP Final Electrical Test Requirements (Method 5004) 1*,2,3,4,5,6 Group A Test Requirements (Method 5005) 1,2,3,4,5,6 Group B and D for Class S End Point Electrical Parameters (Method 5005) PDA Test Notes The PDA is specified as 5% based on failures from group A, subgroup 1, tests after cooldown as the final electrical test in accordance with method 5004 of MIL-STD-883. The verified failures of group A, subgroup 1, after burn-in divided by the total number of devices submitted for burn-in in that lot shall be used to determine the percent for the lot. Linear Technology Corporation reserves the right to test to tighter limits than those given. 1,2,3 * PDA applies to subgroup 1. See PDA Test Notes. TOTAL DOSE BIAS CIRCUIT 10k 15V – 10k + 8V –15V RH1014M TDBC U W TYPICAL PERFOR A CE CHARACTERISTICS Supply Current (Per Amplifier) Positive Slew Rate 0.8 0.8 0.6 0.4 0.2 0 VS = ±15V RL = 10k NEGATIVE SLEW RATE (V/µs) VS = ±15V RL = 10k POSITIVE SLEW RATE (V/µs) SUPPLY CURRENT (mA) VS = ±15V RL = 10k 0.6 0.4 0.2 0 1 10 100 TOTAL DOSE KRAD (Si) 1000 RH1014M G01 4 Negative Slew Rate 0.8 0.6 0.4 0.2 0 1 10 100 TOTAL DOSE KRAD (Si) 1000 RH1014M G02 1 10 100 TOTAL DOSE KRAD (Si) 1000 RH1014M G03 RH1014M U W TYPICAL PERFOR A CE CHARACTERISTICS Input Bias Current Input Offset Voltage Input Offset Current 70 VS = ±15V VCM = 0V 3 VS = ±15V VCM = 0V 60 100 0 –100 VS = ±15V VCM = 0V INPUT OFFSET CURRENT (nA) 200 INPUT BIAS CURRENT (nA) INPUT OFFSET VOLTAGE (µV) 300 50 40 30 20 –200 1 0 –1 10 –300 –2 0 1 10 100 TOTAL DOSE KRAD (Si) 10 100 TOTAL DOSE KRAD (Si) 1 1000 RH1014M G04 1000 1 Power Supply Rejection Ratio 140 150 130 120 110 100 90 130 120 110 100 80 10 100 TOTAL DOSE KRAD (Si) 1000 90 VS = ±10V TO ±18V 130 120 110 100 90 80 70 80 10 100 TOTAL DOSE KRAD (Si) 1 RH1014M G07 1000 1 10 100 TOTAL DOSE KRAD (Si) Input Noise Voltage Density 1000 RH1014M G09 RH1014M G08 Gain Bandwidth Product 1000 100 VS = ±15V fO = 10Hz 90 GAIN BANDWIDTH PRODUCT (kHz) INPUT NOISE VOLTAGE DENSITY (nV/√Hz) 1 VS = ±15V –15V ≤ VCM ≤ 13.5V 140 POWER SUPPLY REJECTION RATIO (dB) COMMON-MODE REJECTION RATIO (dB) VS = ±15V RL = 10k VOUT = ±10V 1000 RH1014M G06 Common-Mode Rejection Ratio Open-Loop Gain 140 10 100 TOTAL DOSE KRAD (Si) RH1014M G05 150 OPEN-LOOP GAIN (dB) 2 80 70 60 50 40 30 20 VS = ±5V RL = 10k 900 800 700 600 500 400 300 200 100 10 0 0 1 10 100 TOTAL DOSE KRAD (Si) 1000 1 10 100 TOTAL DOSE KRAD (Si) RH1014M G10 Information furnished by Linear Technology Corporation is believed to be accurate and reliable. However, no responsibility is assumed for its use. Linear Technology Corporation makes no representation that the interconnection of its circuits as described herein will not infringe on existing patent rights. 1000 RH1014M G11 5 RH1014M I.D. No. 66-11-1014 Rev. G 1007 6 Linear Technology Corporation LT 1007 REV G • PRINTED IN USA 1630 McCarthy Blvd., Milpitas, CA 95035-7417 (408) 432-1900 ● FAX: (408) 434-0507 ● www.linear.com © LINEAR TECHNOLOGY CORPORATION 1990