RH108A - DICE SPECIFICATION

DICE SPECIFICATION
RH108A
8
7
6
PAD FUNCTION
1
2
4
3
1.
2.
3.
4.
5.
6.
7.
8.
COMP 1
– IN
+ IN
V – (substrate)
NC
OUT
V+
COMP 2
DIE CROSS REFERENCE (Note 1, 2)
LTC Finished
Part Number
Order DICE CANDIDATE
Part Number Below
RH108A
RH108A DICE
Backside (substrate) is an alloyed
gold layer. Connect to V –.
74 × 51 mils
W
DICE ELECTRICAL TEST LI ITS
SYMBOL PARAMETER
(Elemental Evaluation)(Notes 4, 5, 7)
CONDITIONS
NOTES
TA = 25°C
MIN
MAX
0.5
SUB- – 55°C ≤ TA ≤ 125°C SUBGROUP MIN
MAX GROUP
VOS
Input Offset Voltage
IOS
Input Offset Current
0.2
1
0.4
2,3
nA
IB
Input Bias Current
2.0
1
3.0
2,3
nA
AVOL
Large-Signal Voltage Gain
CMRR
PSRR
VS = ±15V, VOUT = ±10V
RL ≥ 10k
1
1.0
2,3
UNITS
mV
80
4
40
5,6
V/mV
Common Mode Rejection Ratio
96
1
96
2,3
dB
Power Supply Rejection Ratio
96
1
96
2,3
dB
Input Voltage Range
VS = ±15V
VOUT
Output Voltage Swing
VS = ±15V, RL = 10k
IS
Supply Current
(Note 6)
Note 1: Differential input voltages greater than 1V will cause excessive
current to flow through the input diodes unless limiting resistance is
used.
Note 2: For supply voltages less than ±15V, the maximum input
voltage is equal to the supply voltage.
Note 3: Guaranteed by design, characterization or correlation to other
tested parameters.
Note 4: ±5V ≤ VS ≤ ±20V unless otherwise noted.
3
±13.5
±13.5
±13
4
0.6
V
±13
1
5,6
0.4
0.6
2
3
V
mA
mA
Note 5: VS = ±15V, VCM = 0V, TA = 25°C unless otherwise noted.
Note 6: 25°C ≤ TA ≤ 125°C.
Note 7: Dice are probe tested at 25°C to the limits shown. Final specs
after assembly are sample tested during the elemental evaluation.
Please refer to RH108AH data sheet . For absolute maximum ratings,
typical specifications, performance curves and finished product
specifications, please refer to the standard RH data sheets.
Information furnished by Linear Technology Corporation is believed to be accurate and reliable.
However, no responsibility is assumed for its use. Linear Technology Corporation makes no representation that the interconnection of its circuits as described herein will not infringe on existing patent rights.
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DICE SPECIFICATION
RH108A
Rad Hard die require special handling as compared to standard IC
chips.
Rad Hard die are susceptible to surface damage because there is no
silicon nitride passivation as on standard die. Silicon nitride protects
the die surface from scratches by its hard and dense properties. The
passivation on Rad Hard die is silicon dioxide that is much “softer”
than silicon nitride.
LTC recommends that die handling be performed with extreme care so
as to protect the die surface from scratches. If the need arises to move
the die around from the chip tray, use a Teflon-tipped vacuum wand.
This wand can be made by pushing a small diameter Teflon tubing
onto the tip of a steel-tipped wand. The inside diameter of the Teflon
tip should match the die size for efficient pickup. The tip of the Teflon
should be cut square and flat to ensure good vacuum to die surface.
Ensure the Teflon tip remains clean from debris by inspecting under
stereoscope.
During die attach, care must be exercised to ensure no tweezers touch
the top of the die.
Wafer level testing is performed per the indicated specifications for dice. Considerable differences in performance can often be observed for dice versus
packaged units due to the influences of packaging and assembly on certain devices and/or parameters. Please consult factory for more information on
dice performance and lot qualifications via lot sampling test procedures.
Dice data sheet subject to change. Please consult factory for current revision in production.
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Linear Technology Corporation
rh108aa LT/LT 00499 REV A • PRINTED IN USA
1630 McCarthy Blvd., Milpitas, CA 95035-7417
(408)432-1900 ● FAX: (408) 434-0507 ● www.linear-tech.com
© LINEAR TECHNOLOGY CORPORATION 1998