DICE SPECIFICATION RH37C Low Noise, High Speed Precision Op Amp PAD FUNCTION 1. 2. 3. 4. 5. 6. 7. 8. VOS TRIM –IN +IN V– No Connect OUT V+ VOS TRIM DIE CROSS REFERENCE LTC Finished Part Number Order Part Number RH37C RH37C DICE Please refer to LTC standard product data sheet for other applicable product information. Backside (Substrate) is an alloyed gold layer. Connect to V– L, LT, LTC, LTM, Linear Technology and the Linear logo are registered trademarks of Linear Technology Corporation. All other trademarks are the property of their respective owners. 99mils × 83mils DICE ELECTRICAL TEST LIMITS VS = ±15V, VCM = 0V, TA = 25°C, unless otherwise noted. RH37C SYMBOL PARAMETER CONDITIONS VOS Input Offset Voltage (Note 1) IOS Input Offset Current IB Input Bias Current Input Voltage Range MIN MAX UNITS 150 μV 85 nA 90 nA ±11.0 V CMRR Common Mode Rejection Ratio VCM = ±11 95 dB PSRR Power Supply Rejection Ratio VS = ±4V to ±18V 92 dB AVOL Large-Signal Voltage Gain RL ≥ 2k, VO = ±10V 600 V/mV VOUT Maximum Output Voltage Swing RL ≥ 2k RL ≥ 600Ω SR Slew Rate RL ≥ 2k PD Power Dissipation ±11.4 ±10.0 V V 11 V/μs 170 mW Note 1: Input offset voltage measurements are performed by automatic equipment, approximately 0.5 seconds after application of power. rh37cfdice Information furnished by Linear Technology Corporation is believed to be accurate and reliable. However, no responsibility is assumed for its use. Linear Technology Corporation makes no representation that the interconnection of its circuits as described herein will not infringe on existing patent rights. 1 DICE SPECIFICATION RH37C Rad Hard die require special handling as compared to standard IC chips. Rad Hard die are susceptible to surface damage because there is no silicon nitride passivation as on standard die. Silicon nitride protects the die surface from scratches by its hard and dense properties. The passivation on Rad Hard die is silicon dioxide that is much “softer” than silicon nitride. LTC recommends that die handling be performed with extreme care so as to protect the die surface from scratches. If the need arises to move the die around from the chip tray, use a Teflon-tipped vacuum wand. This wand can be made by pushing a small diameter Teflon tubing onto the tip of a steel-tipped wand. The inside diameter of the Teflon tip should match the die size for efficient pickup. The tip of the Teflon should be cut square and flat to ensure good vacuum to die surface. Ensure the Teflon tip remains clean from debris by inspecting under stereoscope. During die attach, care must be exercised to ensure no tweezers touch the top of the die. Wafer level testing is performed per the indicated specifications for dice. Considerable differences in performance can often be observed for dice versus packaged units due to the influences of packaging and assembly on certain devices and/or parameters. Please consult factory for more information on dice performance and lot qualifications via lot sampling test procedures. Dice data sheet subject to change. Please consult factory for current revision in production. rh37cfdice 2 Linear Technology Corporation I.D.No. 66-10-155 • LT 1009 • PRINTED IN USA 1630 McCarthy Blvd., Milpitas, CA 95035-7417 (408) 432-1900 ● FAX: (408) 434-0507 ● www.linear.com © LINEAR TECHNOLOGY CORPORATION 2009