DICE SPECIFICATION RH1013 Dual Precision Op Amp 1 8 PAD FUNCTION 7 2 6 3 5 1. 2. 3. 4. 5. 6. 7. 8. OUTPUT A –INA +INA V– +INB –INB OUTPUT B V+ DIE CROSS REFERENCE LTC Finished Part Number Order Part Number RH1013 RH1013 DICE Please refer to LTC standard product data sheet for other applicable product information. 4 96mils × 78mils, 12mils thick. Backside metal: Gold Backside potential: V– FUSE LINK L, LT, LTC, LTM, Linear Technology and the Linear logo are registered trademarks of Linear Technology Corporation. All other trademarks are the property of their respective owners. DICE ELECTRICAL TEST LIMITS VS = ±15V, VCM = 0V, TA = 25°C, unless otherwise noted. SYMBOL PARAMETER VOS Input Offset Voltage CONDITIONS MIN (Note 2) IOS Input Offset Current IB Input Bias Current AVOL Large-Signal Voltage Gain VO = ±10V, RL ≥ 2k VO = ±10V, RL ≥ 600Ω Input Voltage Range (Note 1) (Note 2) (Note 2) (Notes 1, 2) MAX UNITS 300 μV 450 μV 10 nA 10 nA 30 nA 30 1.2 0.5 nA V/μV V/μV 13.5 –15.0 V V 3.5 0 V V CMRR Common Mode Rejection Ratio VCM = 13.5V, –15V 97 dB PSRR Power Supply Rejection Ratio VS = ±2V to ±18V 100 dB Channel Separation VO = ±10V, RL = 2k 120 dB Output Saturation Swing RL ≥ 2k Output Low, No Load, (Note 2) Output Low, 600Ω to GND, (Note 2) Output Low, ISINK = 1mA, (Note 2) Output High, No Load, (Note 2) Output High, 600Ω to GND, (Note 2) VOUT SR Slew Rate IS Supply Curent ±12.5 25 10 350 4.0 3.4 0.2 V mV mV mV V V V/μs Per Amplifier 0.55 mA (Note 2) 0.50 mA Information furnished by Linear Technology Corporation is believed to be accurate and reliable. However, no responsibility is assumed for its use. Linear Technology Corporation makes no representation that the interconnection of its circuits as described herein will not infringe on existing patent rights. 1 DICE SPECIFICATION RH1013 DICE ELECTRICAL TEST LIMITS VS = ±15V, VCM = 0V, TA = 25°C, unless otherwise noted. Note 1: Guaranteed by design, characterization or correlation to other tested parameters. Note 2: Specification applies for VS+ = 5V, VS– = 0V, VCM = 0V, VOUT = 1.4V. Rad Hard die require special handling as compared to standard IC chips. Rad Hard die are susceptible to surface damage because there is no silicon nitride passivation as on standard die. Silicon nitride protects the die surface from scratches by its hard and dense properties. The passivation on Rad Hard die is silicon dioxide that is much “softer” than silicon nitride. LTC recommends that die handling be performed with extreme care so as to protect the die surface from scratches. If the need arises to move the die around from the chip tray, use a Teflon-tipped vacuum wand. This wand can be made by pushing a small diameter Teflon tubing onto the tip of a steel-tipped wand. The inside diameter of the Teflon tip should match the die size for efficient pickup. The tip of the Teflon should be cut square and flat to ensure good vacuum to die surface. Ensure the Teflon tip remains clean from debris by inspecting under stereoscope. During die attach, care must be exercised to ensure no tweezers touch the top of the die. Wafer level testing is performed per the indicated specifications for dice. Considerable differences in performance can often be observed for dice versus packaged units due to the influences of packaging and assembly on certain devices and/or parameters. Please consult factory for more information on dice performance and lot qualifications via lot sampling test procedures. Dice data sheet subject to change. Please consult factory for current revision in production. I.D.No. 66-13-1013 2 Linear Technology Corporation LT 0709 REV A • PRINTED IN USA 1630 McCarthy Blvd., Milpitas, CA 95035-7417 (408) 432-1900 ● FAX: (408) 434-0507 ● www.linear.com © LINEAR TECHNOLOGY CORPORATION 2000