SiP4612A/B Datasheet

Product is End of Life 12/2014
SiP4612A/B
Vishay Siliconix
Protected 1-A High-Side Load Switch
DESCRIPTION
FEATURES
SiP4612A/B is a protected highside power switch. It is
designed to operate from voltages ranging from 2.4 V to
5.5 V and handle a continuous current of 1 A. The user
settable current limit protects the input supply voltage from
excessive load currents that might cause a system failure.
SiP4612A/B has a low quiescent current of 11 µA and in
shutdown the supply current is reduced to less than 1 µA.
In addition to current limit, the SiP4612A/B is protected by
undervoltage lockout and thermal shutdown.
• 1 A continuous output current
The SiP4612A/B is available in a lead (Pb)-free 6-pin
PowerPAK TSC75-6 for operation over the industrial
temperature range of - 40 °C to 85 °C.
APPLICATIONS
• 2.4 V to 5.5 V supply voltage range
RoHS
• User settable current limit level
COMPLIANT
• Low quiescent current
• Undervoltage lockout
• Thermal shutdown protection
• 4 kV ESD Rating-HBM
• Peripheral ports
• Hot swap
• Notebook computers
• PDAs
TYPICAL APPLICATION CIRCUIT
IN
2.4 to 5.5 V
1 µF
Enable
CIN
OUT
Load
SiP4612A/B
ON/ON
COUT
0.47 µF
SET
GND
RSET
GND
Document Number: 74481
S-80971-Rev. B, 24-Apr-08
GND
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SiP4612A/B
Vishay Siliconix
ABSOLUTE MAXIMUM RATINGS all voltages referenced to GND = 0 V
Parameter
VIN, VON, VON
IMAX
Storage Temperature
Operating Junction Temperature
Limit
Unit
- 0.3 to 6
2
- 65 to 150
- 40 to 150
V
A
°C
°C
420
mW
131
°C/W
Power Dissipationa, PowerPAK TSC75-6
b
Thermal Impedance (ΘJA) , PowerPAK TSC75-6
Notes:
a. Derate 7.6 mW/°C above TA = 70 °C.
b. Device mounted with all leads soldered or welded to PC board.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
RECOMMENDED OPERATING RANGE all voltages referenced to GND = 0 V
Parameter
IN
Operating Temperature Range
Limit
Unit
2.4 to 5.5
- 40 to 85
V
°C
SPECIFICATIONSa
Limits
Test Conditions Unless Specified
Parameter
Symbol
IN = 5 V, TA = - 40 to 85 °C
Min.a
Typ.b
Max.a
Unit
5.5
V
Power Supplies
Supply Voltage
VIN
Quiescent Current
IQ
2.4
IN = 5 V, ON/ON = Active, lOUT = 0 A
11
25
Shutdown Current
ISD
IN = 5 V, ON/ON = Inactive
1
Switch Off Current
IS(off)
IN = 5 V, ON/ON = Inactive, VOUT = 0 V, TA = 25 °C
1
µA
Enable Inputs
ON/ON High
VIH
ON/ON Low
VIL
ON/ON Leakage Current
ILH
Turn Off Time
tOFF
Turn On Time
tON
IN = 2.4 V to 5.5 V
1.5
0.5
ON/ON = 5 V
1
0.5
5
55
120
IN = 5 V, TA = 25 °C, lOUT = 100 mA
150
225
IN = 3 V, TA = 25 °C, lOUT = 100 mA
180
250
0.5
0.625
IN = 5 V, RL = 10 Ω
V
µA
µs
Output
On-Resistance
Current Limit
RDS
IL
RSET = 6.81 kΩ
Minimum Current Limit
IL(min)
Current Limit Response Time
tRESP
IN = 5 V
UVLO Threshold
VUVLO
Rising Edge
UVLO Hysteresis
VHYST
0.375
mΩ
A
85
mA
4
µs
Undervoltage Lockout
1.8
2.4
0.05
V
Thermal Shutdown
Thermal Shutdown Threshold
Hysteresis
T
THYST
165
20
°C
Notes:
a. The algebraic convention whereby the most negative value is a minimum and the most positive a maximum (- 40 °C to 85 °C).
b. Typical values are for DESIGN AID ONLY, not guaranteed nor subject to production testing.
c. Guaranteed by design.
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Document Number: 74481
S-80971-Rev. B, 24-Apr-08
SiP4612A/B
Vishay Siliconix
PIN CONFIGURATION, ORDERING INFORMATION
OUT
IN
IN
OUT
GND
NC
NC
GND
SET
ON/ON
ON/ON
SET
Bottom View
Top View
TSC75-6 Package
ORDERING INFORMATION
Parameter
SiP4612ADVP-T1-E3
SiP4612BDVP-T1-E3
XX = Lot Code
W = Work week Code
Marking
Temperature Range
Package
M1WXX
M2WXX
- 40 °C to 85 °C
- 40 °C to 85 °C
PowerPAK TSC75-6
PowerPAK TSC75-6
PIN DESCRIPTION
Pin Number
Name
Function
1
2
3
OUT
GND
SET
4
ON/ON
Switch output
Ground pin
Current limit level set pin. The level is determinied by the value of a resistor connected from this pin to GND
Shutdown pin. ON/ON, active low on the SiP4612A to turn on the switch, active high to turn off SiP4612A
Active high on the SiP4612B to turn on the switch, active low to turn off SiP4612B
5
6
NC
IN
No connection
Input supply voltage and switch input
FUNCTIONAL BLOCK DIAGRAM
nW/L
IN
OUT
+
W/L
Under
Voltage
Lockout
Thermal
Shutdown
SET
+
-
ON/ON
Reference
Voltage
GND
Figure 1. SiP4612A/B Block Diagram
Document Number: 74481
S-80971-Rev. B, 24-Apr-08
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SiP4612A/B
Vishay Siliconix
DETAILED DESCRIPTION
The SiP4612A/B limits load current by sampling the pass
transistor current and passing that through an external
resistor, RSET. The voltage across RSET, VSET, is then
compared with an internal reference voltage, VREF. In the
event that load current surpasses the set limit current, VSET
will exceed VREF causing the pass transistor gate voltage to
increase, thereby reducing the gate to source voltage of the
PMOS switch and regulating its current back down to ILIMIT.
Setting the Current Limit Level
Setting the current limit level on the SiP4612A/B requires
some care to ensure the maximum current required by the
load will not trigger the current limit circuitry. The minimum
current limit threshold should be determined by taking the
maximum current required by the load, ILOAD, and adding
25 % headroom. The SiP4612A/B has a current limit
tolerance of 25 %, which is largely a result of process
variations from part to part, and also temperature and
VIN/VOUT variances. Thus, to ensure that the actual current
limit is never below the desired current limit a 1/0.75 = 1.33
coefficient needs to be added to the calculations. Knowing
the maximum load current required, the value of RSET is
calculated as follows.
RSET = RSET coefficient/ILIMIT
where ILIMIT = (ILOAD x 1.33) x 1.25 and RSET coefficient is
3460 for a 500 mA current limit. For typical RSET coefficient
values given a limit current refer to the "Typical
Characteristics" section.
Operation at Current Limit and Thermal Shutdown
In the event that a load higher than ILIMIT is demanded of the
SiP4612A/B, the load current will stay fixed at the current
limit established by RSET. However, since the required
current is not supplied, the voltage at OUT will drop. The
increase in VIN - VOUT will cause the chip to dissipate more
heat. The power dissipation for the SiP4612A/B can be
expressed as
P = ILOAD x (VIN - VOUT)
Once this exceeds the maximum power dissipation of the
package, the die temperature will rise. When the die
temperature exceeds an over-temperature limit of 165 °C,
the SiP4612A/B will shut down until it has cooled down to
145 °C, before starting up again. As can be seen in the figure
below, the SiP4612A/B will continue to cycle on and off until
the load is reduced or the part is turned off (See Figure 2).
The maximum power dissipation in any application is
dependant on the maximum junction temperature,
TJ(MAX) = 125 °C, the junction-to-ambient thermal resistance
for the TSC75-6 package, θJ-A = 131 °C/W, and the ambient
temperature, TA, which may be formulaically expressed as:
P (max) =
TJ (max) − T A
=
θ J −A
125 − TA
131
It then follows that assuming an ambient temperature of
70 °C, the maximum power dissipation will be limited to about
419 mW.
Reverse Voltage
The SiP4612A/B is designed to control current flowing from
IN to OUT. If the voltage on OUT is raised higher than IN
current will flow from OUT to IN but the current limit function
will not be available, as can be inferred from the block
diagram in Figure 1. Thus, in applications were OUT is used
to charge IN, careful considerations must be taken to limit
current through the device and protect it from becoming
damaged.
RSET = 3.32 kΩ
VOUT = (1 V/div)
IOUT (500 mA/div)
20 ms/div
Figure 2. Current Over load Condition. Load Switch turned on with 0.1 Ω load at time = 0 ms.
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Document Number: 74481
S-80971-Rev. B, 24-Apr-08
SiP4612A/B
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
20
20
Quiescent Current (µA)
Quiescent Current (µA)
16
12
8
15
10
5
4
0
- 40
0
- 20
0
20
40
60
80
100
120
0
1
2
5
6
Quiescent Current vs. Input Voltage
250
6
VOUT = 5 V, RSET = 6.81 kΩ
I OUT = 100 mA
5
220
4
190
R DS(on) - (mΩ)
VOUT (V)
4
VIN - Input Voltage (V)
Temperature (°C)
Quiescent Current vs. Temperature
3
VIN = 3 V
160
2
130
1
100
VOUT = 4.2 V, RSET = 4.32 kΩ
70
- 40
0
0
0.5
1
1.5
2
VIN = 5 V
- 20
0
IOUT (A)
40
60
80
100
120
Temperature (°C)
10.0
1.0
1.0
Off Switch Current (µA)
10.0
0.1
0.1
0.01
0.01
0.001
- 40
20
RDS(on) vs. Temperature
Output Current vs. VOUT
Off Supply Current (µA)
3
- 20
0
20
40
60
80
100
Temperature (°C)
Off Supply Current vs. Temperature
Document Number: 74481
S-80971-Rev. B, 24-Apr-08
120
0.001
- 40
- 20
0
20
40
60
80
100
120
Temperature (°C)
Off Switch Current vs. Temperature
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SiP4612A/B
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
1.0
120
100
VIN = 3 V
Turn-Off Time (µs)
Turn-On Time (µS)
0.75
80
VIN = 5 V
60
40
VIN = 5 V
0.50
VIN = 3 V
0.25
20
0
- 40
- 20
0
20
40
60
80
0.0
- 40
100
- 20
0
20
40
60
Temperature (°C)
Temperature (°C)
Turn-On vs. Temperature
RL = 10 Ω, CL = 0.47 µF
Turn-Off vs. Temperature
RL = 10 Ω, CL = 0.47 µF
1.01
80
100
100
1.00
0.99
0.97
RSET (kΩ)
VIH and VIL (V)
0.98
0.96
0.95
VIH
10
VIL
0.94
0.93
0.92
0.91
2.5
3.0
3.5
4.0
4.5
5.0
5.5
1
0.1
6.0
1
ILIMIT (A)
VIH and VIL vs. VIN
RSET vs. ILIMIT
4
5
RSET = 8 kΩ
VIN - VOUT = 0.5 V
3
2
4
Current Limit (%)
RSET ILIMIT Product (kV)
10
VIN - Input Voltage (V)
3
1
0
-1
-2
-3
2
0.00
0.25
0.50
0.75
ILIMIT (A)
RSET Coefficient vs. ILIMIT
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1.00
-4
- 40
- 20
0
20
40
60
80
100
120
Temperature (°C)
Current Limit vs. Temperature
Document Number: 74481
S-80971-Rev. B, 24-Apr-08
SiP4612A/B
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
250
250
IIN = 500 mA
VOUT = 5 V
200
R DS(on) - (mΩ)
R DS(on) - (mΩ)
200
150
100
VOUT = 5 V
150
100
50
50
- 40
0
- 20
0
20
40
60
80
100
120
0
100 200 300 400 500 600 700 800 900 1000
Temperature (°C)
lIN (mA)
RDS(on)_reverse vs. Temperature
RDS(VOUT-IN) vs. Current
TYPICAL WAVEFORMS
VOUT (1 V/div)
VOUT (1 V/div)
IOUT = 500 mA
IOUT = 500 mA
ON (1 V/div)
ON (1 V/div)
20 µs/div
20 µs/div
Turn On
Turn Off
VIN (1 V/div)
VIN (1 V/div)
IOUT = (2 A/div)
IOUT = (2 A/div)
VOUT (1 V/div)
VOUT (1 V/div)
1 µs/div
Short Circuit through 0.3 Ω, Vin = 3.3 V
Document Number: 74481
S-80971-Rev. B, 24-Apr-08
1 µs/div
Short Circuit through 0.3 Ω, Vin = 5 V
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SiP4612A/B
Vishay Siliconix
TYPICAL WAVEFORMS
VOUT 500 mV/div
VOUT
IOUT
IOUT 200 mA/div
100 µs/div
Current Limit
VIN = 3.7 V, RSET = 4.32 kΩ, IOUT: 100 mA to 800 mA
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see http://www.vishay.com/ppg?74481.
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Document Number: 74481
S-80971-Rev. B, 24-Apr-08
Package Information
Vishay Siliconix
PowerPAK ® TSC75-6L (Power IC only)
D1
Exposed pad
e
b
D
Pin4
Pin 5
Pin6
K
E
PPAK TSC75
(1.6 x 1.6 mm)
E1
Exposed pad
K
L
Pin3
Pin 2
Pin1
e1
K2
Pin 1 Dot
By Marking
K2
Top View
Bottom View
A
C
A1
Side View
MILLIMETERS
INCHES
DIM
Min
Nom
Max
Min
Nom
Max
A
0.50
0.55
0.65
0.020
0.022
0.026
A1
0
-
0.05
0
-
0.002
b
0.20
0.25
0.30
0.008
0.010
0.012
C
0.10
0.15
0.20
0.006
0.008
0.010
D
1.55
1.60
1.65
0.0061
0.063
0.065
D1
0.95
1.00
1.05
0.037
0.039
0.041
E
1.55
1.60
1.65
0.061
0.063
0.065
E1
0.55
0.60
0.65
0.022
0.024
0.026
e
0.50 BSC
e1
0.020 BSC
1.00 BSC
0.039 BSC
K
0.15
-
-
0.006
K2
0.20
-
-
0.008
L
0.20
0.25
0.30
0.008
-
-
0.010
0.012
ECN: S-61919-Rev. A, 02-Oct-06
DWG: 5955
Document Number: 74416
02-Oct-06
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Revision: 02-Oct-12
1
Document Number: 91000