INFINEON BAR90

BAR90-081LS
Silicon Trench PIN Diode Array
• Optimized for low bias current antenna
switches in hand held applications
• Very low capacitance at zero volt
reverse bias at frequencies
above 1GHz (typ. 0.19 pF)
• Low forward resistance
(typ. 1.3 Ω @ IF = 3 mA)
• Improved ON / OFF mode harmonic
distortion balance
• Very small form factor: 1.34 x 0.74 x 0.31 mm³
• Pb-free (RoHS compliant) package
• Qualified according AEC Q101
BAR90-081LS
8
7
6
5
1
2
3
4
Type
BAR90-081LS
Package
TSSLP-8-1
Configuration
quad array
LS(nH)
0.2
Marking
WM
Maximum Ratings at TA = 25°C, unless otherwise specified
Parameter
Symbol
Diode reverse voltage
VR
80
V
Forward current
IF
100
mA
Total power dissipation
Ptot
150
mW
Junction temperature
Tj
150
°C
Operating temperature range
Top
-55 ... 125
Storage temperature
Tstg
-55 ... 150
Value
Unit
TS ≤ 137 °C
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BAR90-081LS
Thermal Resistance
Parameter
Symbol
Junction - soldering point1)
RthJS
Value
Unit
≤ 90
K/W
Electrical Characteristics at TA = 25°C, unless otherwise specified
Symbol
Values
Parameter
Unit
min.
typ.
max.
80
-
-
V
-
-
50
nA
DC Characteristics
Breakdown voltage
V(BR)
I(BR) = 5 µA
Reverse current
IR
VR = 60 V
Forward voltage
V
VF
IF = 3 mA
0.75
0.81
0.87
-
0.9
1
IF = 100 mA
1For
calculation of RthJA please refer to Application Note Thermal Resistance
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BAR90-081LS
Electrical Characteristics at TA = 25°C, unless otherwise specified
Parameter
Symbol
Values
min.
typ.
Unit
max.
AC Characteristics
Diode capacitance
pF
CT
VR = 1 V, f = 1 MHz
-
0.25
0.35
VR = 0 V, f = 100 MHz
-
0.3
-
VR = 0 V, f = 1 GHz
-
0.19
-
VR = 0 V, f = 1.8 GHz
-
0.18
-
Reverse parallel resistance
kΩ
RP
VR = 0 V, f = 100 MHz
-
35
-
VR = 0 V, f = 1 GHz
-
5
-
VR = 0 V, f = 1.8 GHz
-
4
-
Forward resistance
Ω
rf
I F = 1 mA, f = 100 MHz
-
2
-
I F = 3 mA, f = 100 MHz
-
1.3
2.3
I F = 10 mA, f = 100 MHz
-
0.8
-
τ rr
-
750
-
ns
I-region width
WI
-
20
-
µm
Insertion loss1)
IL
Charge carrier life time
I F = 10 mA, measured at I R = 3 mA, IR = 6 mA,
RL = 100 Ω
dB
I F = 1 mA, f = 1.8 GHz
-
0.16
-
I F = 3 mA, f = 1.8 GHz
-
0.11
-
I F = 10 mA, f = 1.8 GHz
-
0.08
-
VR = 0 V, f = 0.9 GHz
-
18.5
-
VR = 0 V, f = 1.8 GHz
-
13.5
-
VR = 0 V, f = 2.45 GHz
-
11.5
-
Isolation1)
1Single
ISO
BAR90 diode in series configuration, Z = 50 Ω
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BAR90-081LS
Diode capacitance CT = ƒ (VR)
f = Parameter
Reverse parallel resistance RP = ƒ(V R)
f = Parameter
10 4
0.5
KOhm
pF
10 3
0.4
Rp
CT
100 MHz
0.35
1 GHz
1 MHz
100 MHz
1 GHz
1.8 GHz
0.3
0.25
10
2
10 1
0.2
1.8 GHz
10 0
0.15
0.1
0
2
4
6
8
10
12
14
16
V
10 -1
0
20
2
4
6
8
10
12
14
16
VR
V
20
VR
Forward resistance rf = ƒ (I F)
f = 100 MHz
Forward current IF = ƒ (VF)
TA = Parameter
10 1
10 -1
A
10 -2
rf
IF
Ohm
10 -3
10 0
10 -4
-40°C
+25 °C
+85 °C
+125 °C
10 -5
10 -1 -1
10
10
0
10
1
mA
10
10 -6
0.2
2
IF
0.4
0.6
0.8
V
1.2
VF
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BAR90-081LS
Forward current IF = ƒ (T S)
120
mA
100
90
IF
80
70
60
50
40
30
20
10
0
0
15
30
45
60
75
90 105 120 °C
150
TS
Permissible Puls Load RthJS = ƒ (tp)
Permissible Pulse Load
IFmax / I FDC = ƒ (t p)
10 2
IFmax/IFDC
RthJS
10 2
10 1
D = 0,5
0,2
0,1
0,05
0,02
0,01
0,005
0
10 0
10 -1 -7
10
10
-6
10
-5
10
-4
10
-3
-
10 1
D=0
0.005
0.01
0.02
0.05
0.1
0.2
0.5
10
-2
s
10
10 0 -7
10
0
tp
10
-6
10
-5
10
-4
10
-3
10
-2
s
10
0
tp
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BAR90-081LS
Insertion loss |S21|2 = ƒ(f)
Isolation |S21|2 = ƒ(f)
IF = Parameter
VR = Parameter
Single BAR90 diode in series configuration, Z = 50Ω
Single BAR90 diode in series configuration, Z = 50Ω
0
0
dB
dB
|S 21|²
|S 21|²
-0.1
-0.15
-0.2
-0.25
-0.3
-10
-15
10mA
3mA
1mA
0.5mA
-20
0V
1V
10 V
-25
-0.35
-0.4
0
1
2
3
4
GHz
-30
0
6
f
1
2
3
4
GHz
6
f
6
2009-01-26
Package TSSLP-8-1
7
BAR90-081LS
2009-01-26
BAR90-081LS
Edition 2006-02-01
Published by
Infineon Technologies AG
81726 München, Germany
© Infineon Technologies AG 2007.
All Rights Reserved.
Attention please!
The information given in this dokument shall in no event be regarded as a guarantee
of conditions or characteristics (“Beschaffenheitsgarantie”). With respect to any
examples or hints given herein, any typical values stated herein and/or any information
regarding the application of the device, Infineon Technologies hereby disclaims any
and all warranties and liabilities of any kind, including without limitation warranties of
non-infringement of intellectual property rights of any third party.
Information
For further information on technology, delivery terms and conditions and prices
please contact your nearest Infineon Technologies Office ( www.infineon.com).
Warnings
Due to technical requirements components may contain dangerous substances.
For information on the types in question please contact your nearest
Infineon Technologies Office.
Infineon Technologies Components may only be used in life-support devices or
systems with the express written approval of Infineon Technologies, if a failure of
such components can reasonably be expected to cause the failure of that
life-support device or system, or to affect the safety or effectiveness of that
device or system.
Life support devices or systems are intended to be implanted in the human body,
or to support and/or maintain and sustain and/or protect human life. If they fail,
it is reasonable to assume that the health of the user or other persons
may be endangered.
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