BAR90-081LS Silicon Trench PIN Diode Array • Optimized for low bias current antenna switches in hand held applications • Very low capacitance at zero volt reverse bias at frequencies above 1GHz (typ. 0.19 pF) • Low forward resistance (typ. 1.3 Ω @ IF = 3 mA) • Improved ON / OFF mode harmonic distortion balance • Very small form factor: 1.34 x 0.74 x 0.31 mm³ • Pb-free (RoHS compliant) package • Qualified according AEC Q101 BAR90-081LS 8 7 6 5 1 2 3 4 Type BAR90-081LS Package TSSLP-8-1 Configuration quad array LS(nH) 0.2 Marking WM Maximum Ratings at TA = 25°C, unless otherwise specified Parameter Symbol Diode reverse voltage VR 80 V Forward current IF 100 mA Total power dissipation Ptot 150 mW Junction temperature Tj 150 °C Operating temperature range Top -55 ... 125 Storage temperature Tstg -55 ... 150 Value Unit TS ≤ 137 °C 1 2009-01-26 BAR90-081LS Thermal Resistance Parameter Symbol Junction - soldering point1) RthJS Value Unit ≤ 90 K/W Electrical Characteristics at TA = 25°C, unless otherwise specified Symbol Values Parameter Unit min. typ. max. 80 - - V - - 50 nA DC Characteristics Breakdown voltage V(BR) I(BR) = 5 µA Reverse current IR VR = 60 V Forward voltage V VF IF = 3 mA 0.75 0.81 0.87 - 0.9 1 IF = 100 mA 1For calculation of RthJA please refer to Application Note Thermal Resistance 2 2009-01-26 BAR90-081LS Electrical Characteristics at TA = 25°C, unless otherwise specified Parameter Symbol Values min. typ. Unit max. AC Characteristics Diode capacitance pF CT VR = 1 V, f = 1 MHz - 0.25 0.35 VR = 0 V, f = 100 MHz - 0.3 - VR = 0 V, f = 1 GHz - 0.19 - VR = 0 V, f = 1.8 GHz - 0.18 - Reverse parallel resistance kΩ RP VR = 0 V, f = 100 MHz - 35 - VR = 0 V, f = 1 GHz - 5 - VR = 0 V, f = 1.8 GHz - 4 - Forward resistance Ω rf I F = 1 mA, f = 100 MHz - 2 - I F = 3 mA, f = 100 MHz - 1.3 2.3 I F = 10 mA, f = 100 MHz - 0.8 - τ rr - 750 - ns I-region width WI - 20 - µm Insertion loss1) IL Charge carrier life time I F = 10 mA, measured at I R = 3 mA, IR = 6 mA, RL = 100 Ω dB I F = 1 mA, f = 1.8 GHz - 0.16 - I F = 3 mA, f = 1.8 GHz - 0.11 - I F = 10 mA, f = 1.8 GHz - 0.08 - VR = 0 V, f = 0.9 GHz - 18.5 - VR = 0 V, f = 1.8 GHz - 13.5 - VR = 0 V, f = 2.45 GHz - 11.5 - Isolation1) 1Single ISO BAR90 diode in series configuration, Z = 50 Ω 3 2009-01-26 BAR90-081LS Diode capacitance CT = ƒ (VR) f = Parameter Reverse parallel resistance RP = ƒ(V R) f = Parameter 10 4 0.5 KOhm pF 10 3 0.4 Rp CT 100 MHz 0.35 1 GHz 1 MHz 100 MHz 1 GHz 1.8 GHz 0.3 0.25 10 2 10 1 0.2 1.8 GHz 10 0 0.15 0.1 0 2 4 6 8 10 12 14 16 V 10 -1 0 20 2 4 6 8 10 12 14 16 VR V 20 VR Forward resistance rf = ƒ (I F) f = 100 MHz Forward current IF = ƒ (VF) TA = Parameter 10 1 10 -1 A 10 -2 rf IF Ohm 10 -3 10 0 10 -4 -40°C +25 °C +85 °C +125 °C 10 -5 10 -1 -1 10 10 0 10 1 mA 10 10 -6 0.2 2 IF 0.4 0.6 0.8 V 1.2 VF 4 2009-01-26 BAR90-081LS Forward current IF = ƒ (T S) 120 mA 100 90 IF 80 70 60 50 40 30 20 10 0 0 15 30 45 60 75 90 105 120 °C 150 TS Permissible Puls Load RthJS = ƒ (tp) Permissible Pulse Load IFmax / I FDC = ƒ (t p) 10 2 IFmax/IFDC RthJS 10 2 10 1 D = 0,5 0,2 0,1 0,05 0,02 0,01 0,005 0 10 0 10 -1 -7 10 10 -6 10 -5 10 -4 10 -3 - 10 1 D=0 0.005 0.01 0.02 0.05 0.1 0.2 0.5 10 -2 s 10 10 0 -7 10 0 tp 10 -6 10 -5 10 -4 10 -3 10 -2 s 10 0 tp 5 2009-01-26 BAR90-081LS Insertion loss |S21|2 = ƒ(f) Isolation |S21|2 = ƒ(f) IF = Parameter VR = Parameter Single BAR90 diode in series configuration, Z = 50Ω Single BAR90 diode in series configuration, Z = 50Ω 0 0 dB dB |S 21|² |S 21|² -0.1 -0.15 -0.2 -0.25 -0.3 -10 -15 10mA 3mA 1mA 0.5mA -20 0V 1V 10 V -25 -0.35 -0.4 0 1 2 3 4 GHz -30 0 6 f 1 2 3 4 GHz 6 f 6 2009-01-26 Package TSSLP-8-1 7 BAR90-081LS 2009-01-26 BAR90-081LS Edition 2006-02-01 Published by Infineon Technologies AG 81726 München, Germany © Infineon Technologies AG 2007. All Rights Reserved. Attention please! The information given in this dokument shall in no event be regarded as a guarantee of conditions or characteristics (“Beschaffenheitsgarantie”). With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation warranties of non-infringement of intellectual property rights of any third party. Information For further information on technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies Office ( www.infineon.com). Warnings Due to technical requirements components may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies Office. Infineon Technologies Components may only be used in life-support devices or systems with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. 8 2009-01-26